Abstract: A process for depositing a superconducting thin film composed mainly of compound oxide such as LnBa.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is lanthanide) or (La.sub.1-x .alpha..sub.x).sub.2 CuO.sub.4 (.alpha. is Ba or Sr) on a substrate such as MgO, SrTiO.sub.3 or silicon by sputtering technique, characterized in that a negative bias is applied to the substrate during the sputtering stage without heating the substrate.

Abstract: A superconducting material composed mainly of compound oxide having a composition represented by the general formula:Tl.sub.x Ca.sub.y BaCu.sub.z O.sub.pin which "x", "y" and "z" are numbers each satisfies 0.5.ltoreq.x.ltoreq.3.0, 0.5.ltoreq.y.ltoreq.3.0, and 0.9.ltoreq.z.ltoreq.4.0 respectively.

Abstract: A semiconductor substrate having a silicon substrate and a superconducting thin film layer composed of compound oxide such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is lanthanide) and stratified on the silicon substrate, characterized in that an intermediate semiconductor layer composed of compound semiconductor material such as GaAs is interposed between the silicon substrate and the superconducting thin film layer.

Abstract: A method for preparing a thin film of superconductor on a substrate by sputtering. A target prepared from an oxide containing Ba, Y, and Cu in atomic ratios Cu/Y of 2.5 to 3.5 and Ba/Y of 1.8 to 2.2 is employed to form by sputtering a superconducting thin film on a substrate at a temperature of 600.degree. to 800.degree. C. in an atmosphere having total gas pressure of 1.times.10.sup.-2 to 5.times.10.sup.-2 Torr. and containing Ar and O.sub.2 with an O.sub.2 content of 5 to 80 vol. %. The thin film thus formed is subjected to heat treatment at a temperature of 600.degree. to 930.degree. C. for 1 to 30 hours. The thin film after the heat treatment is cooled at a rate not more than 4.degree. C./min. The film forming surface of the substrate is chosen from the (100) surface or the (110) surface of a single crystal substrate which is lattice-matched with the (100) surface or the (110) surface of crystalline Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-n, where n represents a number in the range 0.ltoreq.n<1.

Abstract: A now superconducting material comprising a compound oxide represented by the general formula:(Sr,.gamma.).sub.x (La,.delta.).sub.1-x .epsilon..sub.y Cu.sub.1-y O.sub.3-zin which".gamma." represents an element of IIa group of the periodic table except Sr, an atomic ratio of .gamma. to Sr being selected in a range between 1% and 90%,".delta." represents an element of IIIa group of the periodic except La, an atomic ratio of .delta. to La is selected in a range between 1% and 90%,".epsilon." represents a metal element of Vb group of the periodic table, x, y and z are numbers each satisfies ranges of 0.ltoreq.x.ltoreq.1,0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1 respectively, and the expression of (Sr,.gamma.) and (La,.delta.) mean that the respective elements position predetermined sites in a crystal in a predetermined proportion.

Abstract: A semiconductor substrate such as silicon single crystal having a thin film of a superconducting material composed of a compound oxide whose critical temperature is higher than 30 K such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is Y or lanthanide), characterized in that a buffer layer composed of ZrO.sub.2, MgO containing or not containing metal element such as Ag is interposed between the semiconductor substrate and the superconducting thin film.

Abstract: A new high Tc superconducting compound oxide material represented by the general formula:AuBvCwCuxOyin which"A" is selected from the group consisting of magnesium(Mg), calcium(Ca), strontium(Sr) and barium(Ba);"B" is selected from the group consisting of yttrium(Y), lanthanum(La), and lanthanide elements;"C" is selected from the group consisting of vanadium (V), tantalum(Ta), indium(In), and thallium(Tl), and ##EQU1##

Abstract: A superconducting composite comprising a compound oxide type superconductor and an outer metal pipe on which said superconductor is supported, characterized in that (i) said outer metal pipe is made of at least one of metals selected from a group comprising gold, silver and platinum metals and their alloys or (ii) an intermediate layer made of these precious metals is interposed between the compound oxide and the metal pipe.The composite may be in a form of a solid pipe or a hollow pipe having a superconducting thin layer deposited on an inner surface of the metal pipe.

Abstract: An improvement in a process for manufacturing a superconductor, characterized by irradiating a material composed of compound oxide by one of ion beams selected from oxygen ion beam, inert gas ion beams and an ion beam consisting of a mixture of oxygen gas and inert gas to convert said material into a superconductor. When a focused ion beam is directed onto desired areas on said film layer, the areas irradiated by the ion beam are converted to a superconductor in a form of a superconducting circuit.

Abstract: A method for producing a superconducting article. An alloy consisting of metal elements, such as Y, Ba and Cu which are constituent elements of a superconducting compound oxide to be produced is oxidized so that a surface of the alloy is converted to the superconducting compound oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-.delta..

Abstract: A method of preparing a high Tc superconducting fiber is disclosed, which comprises drawing into fiber form a core filament of a crystalline oxide, continuously depositing on the heated core filament a high Tc superconducting thin film and then depositing a protective layer on the outer surface of the high Tc superconducting thin film.

Abstract: A superconducting composite comprising a compound oxide type superconductor and an outer metal pipe on which said superconductor is supported, characterized in that (i) said outer metal pipe is made of at least one of metals selected from a group comprising gold, silver and platinum metals and their alloys or (ii) an intermidiate layer made of these precious metals is interposed between the compound oxide and the metal pipe.The composite may be in a form of a solid pipe or a hollow pipe having a superconducting thin layer deposited on an inner surface of the metal pipe.

Abstract: A superconducting material and a process for producing a superconducting material comprising a compound oxide represented by the general formula:(Ba, .gamma.).sub.x (.alpha.,.beta.).sub.1 -.sub.x .epsilon..sub.y Cu.sub.1-y O.sub.3-zin which".gamma." represents an element of the IIa group of the periodic table except Ba, and atomic ratio of .gamma. to Ba, being selected in a range between 1% and 90%,".alpha." represents Y or La,".beta." represents an element of the IIIa group of the periodic table but is different from .alpha., an atomic ratio of .beta. to .alpha. being selected in a range between 1 and 90%,".epsilon." represents a metal element of the IIIb group of the periodic table, x, y and z are numbers each satisfies ranges of 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1 respectively, andthe expression of (Ba, .gamma.) and (.alpha.,.beta.) mean that the respective elements occupy predetermined sites in a crystal in a predetermined proportion.

Abstract: A superconducting material and a process for producing a superconducting material comprising a compound oxide represented by the general formula:(Ba, .gamma.).sub.x (.alpha.,.beta.).sub.1-x .epsilon..sub.y Cu.sub.1-y O.sub.3-zin which".gamma." represents an element of the IIa group of the periodic table except Ba, an atomic ratio of .gamma. to Ba, being selected in a range between 1% and 90%,".alpha." represents Y or La,".beta." represents an element of the IIIa group of the periodic table but is different from .alpha., and atomic ratio of .beta. to .alpha. being selected in a range between 1 and 90%,".epsilon." represents a metal element of the IIIb group of the periodic table, x, y and z are numbers each satisfies ranges of 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1 respectively, andthe expression of (Ba, .gamma.) and (.alpha., .beta.) mean that the respective elements occupy predetermined sites in a crystal in a predetermined proportion.

Abstract: A process for producing a superconducting thick film including steps comprising subjecting a powder mixture of oxides or carbonates of Ba, Y and Cu each having an average particle size of less than 5 .mu.m to preliminary sintering, pulverizing the preliminary sintered mass into a powder having an average particle size of less than 10 .mu.m, and then admixing the pulverized powder with an organic vehicle to prepare a paste which is applied on a substrate and is sintered finally. The preliminary sintering is carried out at a temperature ranging from 700.degree. to 950.degree. C., while the final sintering is carried out at a temperature ranging from 800.degree. C. to 1,000.degree. C.

Abstract: A process for preparing a superconducting thin film of a compound oxide by a process which is similar to MBE technique. In the present process, a plurality of atom beams or molecular beams each contains one element selected from constituent elements of the compound oxide are directed onto a substrate in a predetermined order, so that a plurality of mono-molecular layers are deposited on the substrate.

Abstract: A superconducting fiber comprising a core filament composed of an oxide such as MgO and a superconducting thin film layer composed of superconducting compound oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-.delta. and deposited continuously on an outer surface of said core filament.

Abstract: A now superconducting material comprising a compound oxide represented by the general formula:(Sr,.gamma.).sub.x (La,.delta.).sub.1-x .epsilon..sub.y Cu.sub.1-y O.sub.3-zin which".gamma." represents an element of IIa group of the periodic table except Sr, an atomic ratio of .gamma. to Sr being selected in a range between 1% and 90%,".delta." represents an element of IIIa group of the periodic except La, an atomic ratio of .delta. to La is selected in a range between 1% and 90%,".epsilon." represents a metal element of Vb group of the periodic table, x, y and z are numbers each satisfies ranges of 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z<1 respectively, andthe expression of (Sr,.gamma.) and (La,.delta.) mean that the respective elements position predetermined sites in a crystal in a predetermined proportion.

Abstract: This invention relates to a process for producing a superconducting thin film, characterized in that a target made of a compound oxide containing Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu is used for carrying out physical vapor deposition to produce a thin film of perovskite type oxide or quasi-perovskite type oxide. The target may be made of preliminary sintered material which is obtained by preliminary sintering of a powder mixture including oxides, carbonates, nitrates or sulfates of Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu, or of finally sintered material which is obtained by a final sintering of preliminary sintered material at a temperature ranging from 700.degree. to 1,500.degree. C., preferably from 700.degree. to 1,300.degree. C. The physical vapor deposition is performed by high-frequency sputtering technique under Ar and O.sub.2 containing atmosphere, at a partial pressure of Ar ranging from 1.0.times.10.sup.

Abstract: Improvement in a method for producing a sintered elongated article by the steps comprising filling a metal pipe with a material powder, carrying out plastic deformation of the metal pipe and then subjecting the material powder in deformed metal pipe to sintering. In the invention, a netting of metallic wire (1) whose melting point is higher than a melting point of the material powder (3) is arranged around the metal pipe (2) before the sintering.