Abstract: Improvement in a superconducting thin film of compound oxide represented by the formula: LnBa.sub.2 Cu.sub.3 O.sub.7- .delta. (Ln is lanthanide) or (La.sub.1-x .alpha..sub.x).sub.2 CuO.sub.4 (.alpha. is Ba or Sr) deposited on a substrate or core made of MgO, SrTiO.sub.3 or ZrO.sub.2 by physical vapor deposition technique, the surface roughness R.sub.max (datum length=1,000 .mu.m) of the superconducting thin film being less than 0.2 .mu.m.

Abstract: The invention is an aftertreatment of a high Tc compound oxide type superconducting material by oxygen plasma to improve the superconducting property of the material. The treatment oxygen plasma is preferably performed while the material is heated at 400.degree. to 1,050.degree. C.The material may have a form of bulky mass or a thin film deposited on a substrate by physical vapour deposition technique.

Abstract: In a superconducting thin film composed of compound oxide containing at least one of element selected from a group comprising Y, La, Gd, Ho, Er, Tm, Yb, Dy, Sm, Eu and Lu, Ba and Cu, improvement in that said thin film consists of a single crystal or polycrystal whose c-axis is orientated to a predetermined direction or mono-directionally.

Abstract: A process for preparing a superconducting thin film composed of compound oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-.delta. deposited on a substrate such as SrTiO.sub.3. Improvement is in that a heat-treatment of the deposited thin film is carried out in a same chamber in which the thin film of compound oxide is deposited on the substrate without taking the substrate out of said chamber.

Abstract: Superconducting material of oxide which have a composition represented by the general formula:{.alpha..sub.1-x (.beta..sub.1-w .gamma..sub.w).sub.x }.delta..sub.y .epsilon..sub.zparticularly, {Ba.sub.1-x (Y.sub.1-w .gamma..sub.w).sub.x }Cu.sub.y O.sub.z in which, ".gamma." represents at least one element selected from a group consisting of titanium (Ti), hafnium (Hf), silicon (Si), germanium (Ge), tin (Sn), lead (Pb) and manganese (Mn), and "X", "Y" "W" and "Z" represent numbers which are selected in the following ranges: 0.1.ltoreq.X.ltoreq.0.9, 0.4.ltoreq.y.ltoreq.1.0, 1.ltoreq.z.ltoreq.5 and 0.01.ltoreq.w.ltoreq.0.50 and which have crystal structures of perovskite type or quasiperovskite type.

Abstract: An outer surface of a superconducting thin film of compound oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-.delta. deposited on a substrate such as MgO and SrTiO.sub.3 is protected with a protective layer which is composed of polymer compound such as polyimide, silicon resin or epoxy resin.

Abstract: A process for producing a superconducting article having a layer of compound oxide of quasi-perovskite type oxide crystal structure by electrodeposition technique. The process is characterized by dispersing a material powder in a liquid containing a carrier, driving ionized material particles towards a substrate by applying a direct current between a substrate and a counter electrode, and then sintering a thin layer of powders deposited on the substrate to convert the deposited powders to a superconducting compound oxide.

Abstract: A method for preparing a thin film of a composite copper oxide superconductor with a deposition source of the compound copper oxide, by applying an oxygen ion beam from an ion source onto a substrate while changing beam intensity during formation of the superconducting thin film, thereby to physically deposit evaporative particles from the deposition source on the substrate.

Abstract: A powder-in-tube method of producing an oxide superconduction wire is disclosed in which a preformed copper oxide superconducting powder is continuously filled into a tube precursor having a U shape cross-section formed from a long strip of metal material. The tube precursor is formed into a tube by bending and welding. The resulting tube is drawn to a reduced cross-section and further heated to sinter the packed powder to form the finished oxide superconducting wire.

Abstract: The invention is an after-treatment of a compound oxide type superconducting material by oxygen plasma to improve the superconducting property of the material. The treatment by oxygen plasma is performed while the material is heated at 500.degree. to 1,000.degree. C.The material may have a form of bulky mass or a form of a thin film deposited on a substrate by physical vapor deposition technique.

Abstract: A now superconducting material comprising a compound oxide represented by the general formula:(Ba, .gamma.)x(.alpha.,.beta.).sub.1-x .epsilon..sub.y Cu.sub.1-y O.sub.3-zin which".gamma." represents an element of IIa group of the periodic table except Ba, an atomic ratio of .gamma. to Ba being selected in a range between 1% and 90%,".alpha." represents Y or La,".beta." represents an element of IIIa group of the periodic but is different from .alpha., an atomic ratio of .beta. to .alpha. is selected in a range between 1% and 90%,".epsilon." represents a metal element of IIIb group of the periodic table,x, y and z are numbers each satisfies ranges of 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z<1 respectively, andthe expression of (Ba, .gamma.) and (.alpha.,.beta.) mean that the respective elements position predetermined sites in a crystal in a predetermined proportion.

Abstract: A thin film of a preselected compound having a large area is continuously produced on a substrate by depositing elements constituting the preselected compound from a target member onto the surface of a substrate by sputtering, comprising the steps of:rotating a first target member having a flat surface disposed around an axis which crosses the surface and comprising elements of the preselected compound so that a first part of the surface of target member is positioned at a first sputtering position and another part of the first target member is positioned at a second sputtering position,at the first position, sputtering at least one second target comprising at least one element of the preselected compound which is easily sputtered from the first target member so as to supply the deficient element to the first target member, andat the second position, sputtering the elements from the first target member so as to deposit them on the surface of said substrate while continuously supplying the substrate so that a