Abstract: A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.

Abstract: A polishing liquid is supplied without passing through a rotary joint in a face-up type polishing apparatus. This application discloses a polishing head for the face-up type polishing apparatus used by mounting a polishing pad on a lower surface as one embodiment. The polishing head includes a liquid reservoir portion that receives a liquid and a liquid discharge port that discharges the liquid received by the liquid reservoir portion. The liquid reservoir portion is disposed around a rotation axis of the polishing head. The liquid discharge port is disposed on the lower surface of the polishing head. An annular opening centering on the rotation axis of the polishing head is formed on an upper portion of the polishing head. The liquid reservoir portion is communicated with a space outside the polishing head via the opening.

Abstract: An apparatus for detecting an abnormality in polishing of an edge portion of a substrate is provided. The apparatus includes: a substrate holder configured to rotate the substrate; a pressing device configured to press a polishing tool against the edge portion of the substrate to polish the edge portion; a measuring device configured to measure a position of the polishing tool relative to a surface of the substrate; and a controller configured to determine an amount of polishing of the substrate from the position of the polishing tool, calculate a polishing rate from the amount of polishing of the substrate, and judge that an abnormality in polishing of the edge portion of the substrate has occurred if the polishing rate is out of a predetermined range.

Abstract: A polishing method is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. A method of polishing a substrate by a polishing apparatus includes a polishing table (100) having a polishing surface, a top ring (1) for holding a substrate and pressing the substrate against the polishing surface, and a vertically movable mechanism (24) for moving the top ring (1) in a vertical direction. The top ring (1) is moved to a first height before the substrate is pressed against the polishing surface, and then the top ring (1) is moved to a second height after the substrate is pressed against the polishing surface.

Abstract: A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.

Abstract: A polishing unit of a polishing apparatus according to an embodiment includes: a polishing head having a pressing member configured to hold a polishing tape and press the polishing tape against a peripheral portion of a substrate from above; a tape supply and recovery mechanism configured to supply the polishing tape to the polishing head and recover the polishing tape from the polishing head; a first moving mechanism configured to move the polishing head in a radial direction of the substrate; and a second moving mechanism configured to move the tape supply and recovery mechanism in the radial direction of the substrate. The positioning unit includes a positioning block having a contacting surface, and alignment of the polishing tape is conducted by the second moving mechanism moving the tape supply and recovery mechanism so that a substrate-side edge of the polishing tape makes contact with the contacting surface.

Abstract: A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.

Abstract: A polishing unit of a polishing apparatus according to an embodiment includes: a polishing head having a pressing member configured to hold a polishing tape and press the polishing tape against a peripheral portion of a substrate from above; a tape supply and recovery mechanism configured to supply the polishing tape to the polishing head and recover the polishing tape from the polishing head; a first moving mechanism configured to move the polishing head in a radial direction of the substrate; and a second moving mechanism configured to move the tape supply and recovery mechanism in the radial direction of the substrate. The positioning unit includes a positioning block having a contacting surface, and alignment of the polishing tape is conducted by the second moving mechanism moving the tape supply and recovery mechanism so that a substrate-side edge of the polishing tape makes contact with the contacting surface.

Abstract: A polishing unit of a polishing apparatus according to an embodiment includes: a polishing head having a pressing member configured to hold a polishing tape and press the polishing tape against a peripheral portion of a substrate from above; a tape supply and recovery mechanism configured to supply the polishing tape to the polishing head and recover the polishing tape from the polishing head; a first moving mechanism configured to move the polishing head in a radial direction of the substrate; and a second moving mechanism configured to move the tape supply and recovery mechanism in the radial direction of the substrate. The positioning unit includes a positioning block having a contacting surface, and alignment of the polishing tape is conducted by the second moving mechanism moving the tape supply and recovery mechanism so that a substrate-side edge of the polishing tape makes contact with the contacting surface.

Abstract: A polishing method which can remove foreign matters from an entire back surface of a substrate at a high removal rate is provided. The polishing method includes placing a polishing tool in sliding contact with an outer circumferential region of a back surface of a substrate while holding a center-side region of the back surface of the substrate, and placing a polishing tool in sliding contact with the center-side region of the back surface of the substrate while holding a bevel portion of the substrate to polish the back surface in its entirety.

Abstract: There is disclosed a substrate processing apparatus which is capable of detecting whether a substrate, such as a wafer, supported by a fluid is properly present in a predetermined processing position or not. The substrate processing apparatus includes at least one distance sensor configured to measure a distance between a scrubber and a hydrostatic support structure; and a processing controller configured to calculate a gap between the hydrostatic support structure and the surface of the substrate from a measured value of the distance and determine whether the gap falls within a predetermined range or not.

Abstract: A method of detecting an abnormality in polishing of a substrate is provided. The method includes: rotating the substrate; pressing a polishing tool against an edge portion of the substrate to polish the edge portion; measuring a position of the polishing tool relative to a surface of the substrate; determining an amount of polishing of the substrate from the position of the polishing tool; calculating a polishing rate from the amount of polishing of the substrate; and judging that an abnormality in polishing of the edge portion of the substrate has occurred if the polishing rate is out of a predetermined range.

Abstract: Detection of an abnormality in polishing of a substrate is provided. A measuring device measures a position of the polishing tool relative to a surface of the substrate. A controller determines an amount of polishing of the substrate from the position of the polishing tool; calculates a polishing rate from the amount of polishing of the substrate; and judges that an abnormality in polishing of the edge portion of the substrate has occurred if the polishing rate is out of a predetermined range exceeds a predetermined threshold value.

Abstract: A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.

Abstract: A cleaning apparatus 1 is provided with a heating unit 5 that heats a cleaning surface of a substrate W, a cleaning unit 6 that supplies ozone water to the cleaning surface of the substrate W and cleans the cleaning surface and a control unit 7 that controls the heating of the cleaning surface and the supply of the cleaning liquid so as to clean the cleaning surface after heating the cleaning surface of the substrate W.

Abstract: A polishing method of polishing a substrate includes moving a stopper from a predetermined initial position by a distance corresponding to a target polishing amount of a substrate. The method further includes pressing a polishing tool against the substrate by a pressing member while rotating the substrate. The method further includes polishing the substrate until a positioning member which moves together with the pressing member is brought into contact with the stopper.

Abstract: A polishing method includes rotating a substrate, performing a first polishing process of pressing a polishing tape against an edge portion of the substrate by a pressing member, with a portion of the polishing tape projecting from the pressing member inwardly in a radial direction of the substrate, to polish the edge portion of the substrate and bend the portion of the polishing tape along the pressing member, and performing a second polishing process of pressing the bent portion of the polishing tape inwardly in the radial direction of the substrate by the pressing member to further polish the edge portion of the substrate.

Abstract: A polishing apparatus is used for polishing a substrate such as a semiconductor wafer. The polishing apparatus includes a substrate holder to hold a substrate and to rotate the substrate, a pressing member configured to press a polishing tool against the substrate and to polish the substrate, a pressing force control mechanism configured to control a pressing force of the pressing member, and a polishing position limiting mechanism configured to limit a polishing position of the pressing member. A polishing tape or a fixed abrasive is used as the polishing tool.

Abstract: An apparatus and method of polishing a substrate is described. The polishing includes: rotating a substrate; pressing a first polishing tool against an edge portion of the substrate to polish the edge portion; and pressing a second polishing tool against the edge portion of the substrate to polish the edge portion. The second polishing tool is located more inwardly than the first polishing tool with respect to a radial direction of the substrate. The first polishing tool has a polishing surface rougher than a polishing surface of the second polishing tool.

Abstract: There is disclosed a substrate processing apparatus which is capable of detecting whether a substrate, such as a wafer, supported by a fluid is properly present in a predetermined processing position or not. The substrate processing apparatus includes at least one distance sensor configured to measure a distance between a scrubber and a hydrostatic support structure; and a processing controller configured to calculate a gap between the hydrostatic support structure and the surface of the substrate from a measured value of the distance and determine whether the gap falls within a predetermined range or not.