Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

Abstract: A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric co

Abstract: The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity. The solid-state imaging device includes a semiconductor layer in which a surface side becomes a circuit formation surface, photoelectric conversion units PD1 and PD2 of two layers or more that are stacked and formed in the semiconductor layer, and a longitudinal transistor Tr1 in which a gate electrode is formed to be embedded in the semiconductor layer from a surface of the semiconductor layer. The photoelectric conversion unit PD1 of one layer in the photoelectric conversion units of the two layers or more is formed over a portion of the gate electrode of the longitudinal transistor Tr1 embedded in the semiconductor substrate and is connected to a channel formed by the longitudinal transistor Tr1.

Abstract: An image processor according to the present disclosure includes: an image segmentation processing section to generate a plurality of first map data on the basis of first image map data including a plurality of pixel values, the plurality of first map data having arrangement patterns of pixel values different from each other and including pixel values located at positions different from each other; an interpolation processing section to generate a plurality of second map data by determining a pixel value at a position where no pixel value is present in each of the plurality of first map data with use of interpolation processing; and a synthesis processing section to generate third map data by generating, on the basis of pixel values at positions corresponding to each other in the plurality of second map data, a pixel value at a position corresponding to the positions.

Abstract: A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

Abstract: The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

Abstract: An image processor according to the present disclosure includes: an image segmentation processing section to generate a plurality of first map data on the basis of first image map data including a plurality of pixel values, the plurality of first map data having arrangement patterns of pixel values different from each other and including pixel values located at positions different from each other; an interpolation processing section to generate a plurality of second map data by determining a pixel value at a position where no pixel value is present in each of the plurality of first map data with use of interpolation processing; and a synthesis processing section to generate third map data by generating, on the basis of pixel values at positions corresponding to each other in the plurality of second map data, a pixel value at a position corresponding to the positions.

Abstract: To improve the measurement accuracy of a particle size distribution measuring device that performs a particle size distribution measurement in a line start mode. A measurement cell used in a line start mode of a centrifugal sedimentation type particle size distribution measuring device includes: a cell main body that has an opening provided on one end and stores therein a density gradient liquid WDGS; and a cell cap that closes the opening of the cell main body and has an internal passage R provided therein for holding a sample liquid WSS. When an application of a centrifugal force is received, the sample liquid WSS is introduced from the internal passage R into the density gradient liquid WDGS.

Abstract: A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric co

Abstract: The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity. The solid-state imaging device includes a semiconductor layer in which a surface side becomes a circuit formation surface, photoelectric conversion units PD1 and PD2 of two layers or more that are stacked and formed in the semiconductor layer, and a longitudinal transistor Tr1 in which a gate electrode is formed to be embedded in the semiconductor layer from a surface of the semiconductor layer. The photoelectric conversion unit PD1 of one layer in the photoelectric conversion units of the two layers or more is formed over a portion of the gate electrode of the longitudinal transistor Tr1 embedded in the semiconductor substrate and is connected to a channel formed by the longitudinal transistor Tr1.

Abstract: The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

Abstract: A solid-state imaging element includes a pixel including a first imaging element, a second imaging element, a third imaging element, and an on-chip micro lens 90. The first imaging element includes a first electrode 11, a third electrode 12, and a second electrode 16. The pixel further includes a third electrode control line VOA connected to the third electrode 12 and a plurality of control lines 62B connected to various transistors included in the second and third imaging elements and different from the third electrode control line VOA. In the pixel, a distance between the center of the on-chip micro lens 90 included in the pixel and any one of the plurality of control lines 62B included in the pixel is shorter than a distance between the center of the on-chip micro lens 90 included in the pixel and the third electrode control line VOA included in the pixel.

Abstract: A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.

Abstract: The present invention includes: a cell holding body that holds a measurement cell housing a measurement sample and a dispersion medium; a cover attached to the cell holding body so as to cover the measurement cell; a rotation section that rotates the cell holding body and applies centrifugal force to the measurement cell; a light source that is provided on one side of a rotation passage region of the measurement cell and irradiates the cell with light; a photodetector that is provided on another side of the rotation passage region of the measurement cell and detects light transmitted through the cell; and a particle diameter distribution arithmetic section that acquires a light intensity signal from the photodetector and calculates a particle diameter distribution. The rotation passage region of the cover is located inside an optical path of light passing between the light source and the photodetector.

Abstract: The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity. The solid-state imaging device includes a semiconductor layer in which a surface side becomes a circuit formation surface, photoelectric conversion units PD1 and PD2 of two layers or more that are stacked and formed in the semiconductor layer, and a longitudinal transistor Trl in which a gate electrode is formed to be embedded in the semiconductor layer from a surface of the semiconductor layer. The photoelectric conversion unit PD1 of one layer in the photoelectric conversion units of the two layers or more is formed over a portion of the gate electrode of the longitudinal transistor Trl embedded in the semiconductor substrate and is connected to a channel formed by the longitudinal transistor Trl.

Abstract: A solid-state imaging device according to an embodiment of the disclosure includes a first electrode, a second electrode, a photoelectric conversion layer, and a voltage applier. The first electrode includes a plurality of electrodes independent from each other. The second electrode is disposed opposite to the first electrode. The photoelectric conversion layer is disposed between the first electrode and the second electrode. The voltage applier applies different voltages to at least one of the first electrode or the second electrode during a charge accumulation period and a charge non-accumulation period.

Abstract: A particle size distribution measuring apparatus includes a light source that emits measurement light to a sample accommodated in a cell including a pair of light transmission plates separated from each other, one or a plurality of detectors that detects the measurement light scattered in the sample, and a particle size distribution calculator that calculates a particle size distribution of a particle group included in the sample based on output signals of the detectors. The particle size distribution measuring apparatus further includes a force applying mechanism that moves at least one of the light transmission plates to apply pressure or a shearing force to the sample in the cell, in which the particle size distribution calculator is configured to calculate the particle size distribution at the time when the pressure or the shearing force applied to the sample has changed from a first state to a second state.

Abstract: Provided is a surface processing apparatus and a surface processing method for a SiC substrate using anodization. The surface processing apparatus for the SiC substrate includes a surface processing pad and a power supply device. The surface processing pad includes a grinding wheel layer. The grinding wheel layer is disposed facing a workpiece surface of the SiC substrate. The power supply device passes a pulsed current having a period greater than 0.01 seconds and less than or equal to 20 seconds for anodizing the workpiece surface to be processed by the grinding wheel layer through the SiC substrate as an anode in the presence of an electrolyte.

Abstract: An object of the present claimed invention is to improve cell cooling performance, keep a temperature of a dispersion medium constant, and improve measurement accuracy. The particle size distribution measuring device of this invention comprises a cell holding body 31 that holds a cell 2 housing a measurement sample and that is rotated by a motor 322, a case (C) having a housing space (S) for rotatably housing the cell holding body 31, and a cooling mechanism 8 for cooling the cell 2. The cooling mechanism 8 comprises a cooler 81, and a supply channel 82 that supplies a gas that has been cooled by the cooler 81 to the housing space (S).