Abstract: A method of manufacturing a metal compound thin film is disclosed. The method may include forming a first metal compound layer on a substrate by atomic layer deposition, performing annealing on the first metal compound layer in an atmosphere containing a nitrogen compound gas, thereby diffusing nitrogen into the first metal compound layer, and forming a second metal compound layer on the first metal compound layer by atomic layer deposition.

Abstract: A metal atomic layer and an oxygen atomic layer are formed in this order by ALD, followed by rapid heating through RTA (Rapid Thermal Annealing). This cycle of steps is repeated to form a high dielectric constant film.

Abstract: A high dielectric gate insulating film having the structure that a high-nitrogen layer, a low-nitrogen layer, and a high-nitrogen layer are layered in this order from a silicon-substrate side.

Abstract: A throughput during a process of forming a thin film is improved and a thin film of high quality is produced at low cost. For this purpose, a film forming system comprises a chamber 8, a precursory gas supplying line 2 to supply the chamber 8 with precursory gas, a reactive gas supplying line 1 to supply the chamber 8 with reactive gas, and a purge gas supplying line 3 to supply purge gas that purges the precursory gas and the reactive gas, and forms a thin film on a substrate 82 in the chamber 8 by supplying the precursory gas or the reactive gas and purging alternately, and further comprises a middle line 22 having a certain volume that is arranged on a part or all of the precursor supplying line 2 and into which the precursory gas can be filled at a time when the precursory gas is not supplied, and/or a middle line 12 having a certain volume that is arranged on a part or all of the reactive gas supplying line 1 and into which the reactive gas can be filled at a time when the reactive gas is not supplied.

Abstract: This invention provides a method for forming a semiconductor device, capable of preventing as many impurities as possible, which cause deterioration in film quality, from existing in an gate insulating film. In this invention, a step of forming an insulating film so as to have a thickness in the range of 0.3 to 2 nm and a step of removing impurities from the insulating film are repeated a plurality of times, to form an insulating film having a prescribed thickness.

Abstract: A dielectric layer may be formed by depositing the dielectric layer to an intermediate thickness and applying a nitridation process to the dielectric layer of intermediate thickness. The dielectric layer may then be deposited to the final, desired thickness.

Abstract: A dielectric layer may be formed by depositing the dielectric layer to an intermediate thickness and applying a nitridation process to the dielectric layer of intermediate thickness. The dielectric layer may then be deposited to the final, desired thickness.

Abstract: A metal atomic layer and an oxygen atomic layer are formed in this order by ALD, followed by rapid heating through RTA (Rapid Thermal Annealing). This cycle of steps is repeated to form a high dielectric constant film.

Abstract: A high dielectric gate insulating film having the structure that a high-nitrogen layer, a low-nitrogen layer, and a high-nitrogen layer are layered in this order from a silicon-substrate side.

Abstract: A dielectric layer may be formed by depositing the dielectric layer to an intermediate thickness and applying a nitridation process to the dielectric layer of intermediate thickness. The dielectric layer may then be deposited to the final, desired thickness.

Abstract: In a method of manufacturing oxide thin film by adsorbing or depositing oxide forming starting material on a substrate followed by oxide formation, by using water in a liquid state to manufacture the oxide thin film, the advantages of the ALD method are utilized while resolving the tendency to leave impurities in the oxide film produced that is a drawback thereof, so that oxide thin film can be obtained having a reduced concentration of impurities.

Abstract: In a process of forming a film on a surface of a wafer by thermal processing, laser light generated by a light source is depolarized by a depolarizer and the deporlarized light is irradiated upon the surface of wafer. As for the light reflected from the surface of wafer, polarization components in predetermined two directions perpendicular to each other are extracted by a beam splitter, and optical sensors receive the extracted light components to detect each intensity. An analytical processing unit determines a thickness of a formed film based on a change in a difference in intensity.

Abstract: A mask for a selective growth of a solid, is provided in which the solid is selectively grown in a predetermined region of a substrate and growth on other regions is suppressed. A method is also provided for selectively growing a solid on only the predetermined region of a substrate using the mask. In the mask, a surface layer and an underlayer are provided, each having different chemical compositions. Thus, even if the mask is formed on a substrate in an ultra thin film, the generation of mask defects can be suppressed and stability provided to heat and electron beams.

Abstract: In a process of forming a film on a surface of a wafer by thermal processing, laser light generated by a light source is depolarized by a depolarizer and the deporlarized light is irradiated upon the surface of wafer As for the light reflected from the surface of wafer, polarization components in predetermined two directions perpendicular to each other are extracted by a beam splitter, and optical sensors receive the extracted light components to detect each intensity. An analytical processing unit determines a thickness of a formed film based on a change in a difference in intensity.

Abstract: A mask for a selective growth of a solid, is provided in which the solid is selectively grown in a predetermined region of a substrate and growth on other regions is suppressed. A method is also provided for selectively growing a solid on only the predetermined region of a substrate using the mask. In the mask, a surface layer and an underlayer are provided, each having different chemical compositions. Thus, even if the mask is formed on a substrate in an ultra thin film, the generation of mask defects can be suppressed and stability provided to heat and electron beams.

Abstract: A mask for a selective growth of a solid, is provided in which the solid is selectively grown in a predetermined region of a substrate and growth on other regions is suppressed. A method is also provided for selectively growing a solid on only the predetermined region of a substrate using the mask. In the mask, a surface layer and an underlayer are provided, each having different chemical compositions. Thus, even if the mask is formed on a substrate in an ultra thin film, the generation of mask defects can be suppressed and stability provided to heat and electron beams.