Patents by Inventor Tetsuo Aoyama
Tetsuo Aoyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8545716Abstract: A metal film such as an aluminum film or an aluminum alloy film is etched with good controllability, preventing a resist from bleeding, to have a proper taper configuration and superior flatness. A water solution containing a phosphoric acid, a nitric acid, and an organic acid salt is used as an etching liquid composition used to etch the metal film on a substrate. The organic acid salt is composed of one kind selected from a group consisting of an aliphatic monocarboxylic acid, an aliphatic polycarboxylic acid, an aliphatic oxicarboxylic acid, an aromatic monocarboxylic acid, an aromatic polycarboxylic acid and an aromatic oxycarboxylic acid, and one kind selected from a group consisting of an ammonium salt, an amine salt, a quaternary ammonium salt, and an alkali metal salt. In addition, a concentration of the organic acid salt ranges from 0.1% to 20% by weight.Type: GrantFiled: July 16, 2008Date of Patent: October 1, 2013Assignees: Hayashi Pure Chemical Ind., Ltd., Sanyo Electric Co., Ltd., SANYO Semiconductor Manufacturing Co., Ltd., Sanyo Semiconductor Co., Ltd.Inventors: Tsuguhiro Tago, Tomotake Matsuda, Mayumi Kimura, Tetsuo Aoyama
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Publication number: 20100230631Abstract: A metal film such as an aluminum film or an aluminum alloy film is etched with good controllability, preventing a resist from bleeding, to have a proper taper configuration and superior flatness. A water solution containing a phosphoric acid, a nitric acid, and an organic acid salt is used as an etching liquid composition used to etch the metal film on a substrate. The organic acid salt is composed of one kind selected from a group consisting of an aliphatic monocarboxylic acid, an aliphatic polycarboxylic acid, an aliphatic oxicarboxylic acid, an aromatic monocarboxylic acid, an aromatic polycarboxylic acid and an aromatic oxycarboxylic acid, and one kind selected from a group consisting of an ammonium salt, an amine salt, a quaternary ammonium salt, and an alkali metal salt. In addition, a concentration of the organic acid salt ranges from 0.1% to 20% by weight.Type: ApplicationFiled: July 16, 2008Publication date: September 16, 2010Inventors: Tsuguhiro Tago, Tomotake Matsuda, Mayumi Kimura, Tetsuo Aoyama
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Publication number: 20090218542Abstract: An etchant composition contains (a) an alkaline compound mixture of an organic alkaline compound and inorganic alkaline compound and (b) a silicon-containing compound. The organic alkaline compound is composed of one or more ingredients from quaternary ammonium hydroxide and ethylenediamine. The inorganic alkaline compound is composed of one or more ingredients from sodium hydroxide, potassium hydroxide, ammonia and hydrazine. The silicon-containing inorganic compound is composed of one or more ingredients from metal silicon, fumed silica, colloidal silica, silica gel, silica sol, diatomaceous earth, acid clay and activated clay, and the silicon-containing organic compound is composed of one or more ingredients from quaternary ammonium salts of alkyl silicate and quaternary ammonium salts of alkyl silicic acid.Type: ApplicationFiled: February 26, 2009Publication date: September 3, 2009Applicants: Hayashi Pure Chemical Ind, Ltd., SANYO ELECTRIC CO., LTD., Sanyo Semiconductor Co., Ltd., SANYO Semiconductor Manufacturing Co., LtdInventors: Kenji Isami, Mayumi Kimura, Tetsuo Aoyama, Tsuguhiro Tago
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Publication number: 20090099051Abstract: The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageously provide both cleaning efficiency and material compatibility.Type: ApplicationFiled: July 15, 2008Publication date: April 16, 2009Inventors: Tetsuo Aoyama, Toshitaka Hiraga, Tomoko Suzuki
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Patent number: 7399365Abstract: The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageously provide both cleaning efficiency and material compatibility.Type: GrantFiled: April 19, 2004Date of Patent: July 15, 2008Assignee: EKC Technology, Inc.Inventors: Tetsuo Aoyama, Toshitaka Hiraga, Tomoko Suzuki
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Patent number: 7341827Abstract: One example of a separation-material composition for a photo-resist according to the present invention comprises 5.0 weight % of sulfamic acid, 34.7 weight % of H2O, 0.3 weight % of ammonium 1-hydrogen difluoride, 30 weight % of N,N-dimethylacetamide and 30 weight % of diethylene glycol mono-n-buthyl ether. Another example of a separation-material composition for a photo-resist according to the present invention comprises 1-hydroxyethylidene-1, 3.0 weight % of 1-diphosphonic acid, 0.12 weight % of anmonium fluoride, 48.38 weight % of H2O and 48.5 weight % of diethylene glycol mono-n-buthl ether. The separation-material composition for the photo-resist is mainly used for a medicinal liquid washing liquid/scientific liquid in order to remove the photo-resist residuals and the by-product polymer after an ashing process of a photo-resist mask.Type: GrantFiled: August 14, 2003Date of Patent: March 11, 2008Assignees: Sony Corporation, EKC Technology K.K.Inventors: Masafumi Muramatsu, Hayato Iwamoto, Kazumi Asada, Tomoko Suzuki, Toshitaka Hiraga, Tetsuo Aoyama
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Patent number: 7250391Abstract: The cleaning composition for removing resists includes a salt of hydrofluoric acid and a base not containing a metal (A component), a water-soluble organic solvent (B1 component), at least one organic acid or inorganic acid (C component), water (D component), and, optionally, an ammonium salt (E1 component), and having a pH 4-8. Thus, in manufacturing a semiconductor device, such as a copper interconnecting process, efficiency of removing resist residue and other etching residue after etching or ashing is improved, and corrosion resistance of a copper and an insulating film is also improved.Type: GrantFiled: July 11, 2003Date of Patent: July 31, 2007Assignees: Renesas Technology Corp., Matsushita Electric Industrial Co., Ltd., EKC Technology K.K.Inventors: Itaru Kanno, Yasuhiro Asaoka, Masahiko Higashi, Yoshiharu Hidaka, Etsuro Kishio, Tetsuo Aoyama, Tomoko Suzuki, Toshitaka Hiraga, Toshihiko Nagai
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Patent number: 6875288Abstract: The cleaning agent described above comprises a surfactant and an organic solvent, and the cleaning method described above is characterized by allowing the cleaning agent described above to flow on the surface of the material to be treated at a high speed to thereby clean the above surface. According to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.Type: GrantFiled: October 9, 2001Date of Patent: April 5, 2005Assignees: Tokyo Electron Limited, Mitsubishi Gas Chemical Company, Inc.Inventors: Hideto Gotoh, Takayuki Niuya, Hiroyuki Mori, Hiroshi Matsunaga, Fukusaburo Ishihara, Yoshiya Kimura, Ryuji Sotoaka, Takuya Goto, Tetsuo Aoyama, Kojiro Abe
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Publication number: 20050014667Abstract: The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageously provide both cleaning efficiency and material compatibility.Type: ApplicationFiled: April 19, 2004Publication date: January 20, 2005Inventors: Tetsuo Aoyama, Toshitaka Hiraga, Tomoko Suzuki
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Publication number: 20040106531Abstract: The cleaning composition for removing resists includes a salt of hydrofluoric acid and a base not containing a metal (A component), a water-soluble organic solvent (B1 component), at least one acid selected from a group consisting of organic acid and inorganic acid (C component), water (D component), and optionally an ammonium salt (E1 component), and its hydrogen ion concentration (pH) is 4-8. Thus, in the manufacturing process of a semiconductor device such as a copper interconnecting process, removing efficiency of resist residue and other etching residue after etching or ashing improves, and corrosion resistance of copper and insulating film also improves.Type: ApplicationFiled: July 11, 2003Publication date: June 3, 2004Applicants: Renesas Technology Corp., Matsushita Electric Industrial Co., Ltd., EKC Technology K.K.Inventors: Itaru Kanno, Yasuhiro Asaoka, Masahiko Higashi, Yoshiharu Hidaka, Etsuro Kishio, Tetsuo Aoyama, Tomoko Suzuki, Toshitaka Hiraga, Toshihiko Nagai
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Publication number: 20040081922Abstract: The photoresist stripping composition of the present invention comprises an amine compound and at least one alkanol amide compound selected from the group consisting of compounds represented by Formula I or II: 1Type: ApplicationFiled: February 28, 2003Publication date: April 29, 2004Inventors: Kazuto Ikemoto, Hisake Abe, Taketo Maruyama, Tetsuo Aoyama
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Publication number: 20040038154Abstract: One example of a separation-material composition for a photo-resist according to the present invention comprises 5.0 weight % of sulfamic acid, 34.7 weight % of H2O, 0.3 weight % of ammonium 1-hydrogen difluoride, 30 weight % of N,N-dimethylacetamide and 30 weight % of diethylene glycol mono-n-buthyl ether. Another example of a separation-material composition for a photo-resist according to the present invention comprises 1-hydroxyethylidene-1, 3.0 weight % of 1-diphosphonic acid, 0.12 weight % of anmonium fluoride, 48.38 weight % of H2O and 48.5 weight % of diethylene glycol mono-n-buthl ether.Type: ApplicationFiled: August 14, 2003Publication date: February 26, 2004Inventors: Masafumi Muramatsu, Hayato Iwamoto, Kazumi Asada, Tomoko Suzuki, Toshitaka Hiraga, Tetsuo Aoyama
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Patent number: 6686322Abstract: A cleaning agent which comprises 0.1 to 60% by weight of an oxidizing agent and 0.0001 to 5% by weight of a chelating agent. In the process for producing semiconductor integrated circuits, a pattern layer of a photoresist used as an etching mask and residues formed from the photoresist by dry etching can be easily removed with the cleaning agent. In the process for producing substrates for liquid crystal display panels, residues derived from a conductive thin film formed by dry etching can also be easily removed. In the cleaning processes using the cleaning agent, wiring materials or insulating materials in thin film circuit devices or other materials used for producing substrates of semiconductor integrated circuits and liquid crystal panels are not corroded.Type: GrantFiled: August 28, 2000Date of Patent: February 3, 2004Assignees: Sharp Kabushiki Kaisha, Mitsubishi Gas Chemical Company, Inc.Inventors: Masahiro Nohara, Ryou Hashimoto, Taimi Oketani, Hisaki Abe, Taketo Maruyama, Tetsuo Aoyama
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Patent number: 6638694Abstract: A resist stripping agent comprising a specific alkanolamine having at least one functional group represented by the following formula (I): wherein R1 and R2 are each hydrogen atom, C1-C8 alkyl or C1-C8 alkenyl. The resist stripping agent easily and efficiently removes resist films and resist residues remaining after etching or after ashing subsequent to etching in manufacturing semiconductor devices at low temperatures in short period of time. The resist stripping agent is resistant to corrosion against materials for substrate, circuits and insulating films.Type: GrantFiled: February 28, 2003Date of Patent: October 28, 2003Assignee: Mitsubishi Gas Chemical Company, IncInventors: Kazuto Ikemoto, Hisaki Abe, Taketo Maruyama, Tetsuo Aoyama
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Publication number: 20030186175Abstract: A resist stripping agent comprising a specific alkanolamine having at least one functional group represented by the following formula (I): 1Type: ApplicationFiled: February 28, 2003Publication date: October 2, 2003Inventors: Kazuto Ikemoto, Hisaki Abe, Taketo Maruyama, Tetsuo Aoyama
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Patent number: 6514352Abstract: The cleaning method described above is characterized by allowing a cleaning agent comprising an oxidizing agent, a chelating agent and fluorine compound to flow on a surface of a material to be treated at a high speed to thereby clean the above surface according to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.Type: GrantFiled: October 9, 2001Date of Patent: February 4, 2003Assignees: Tokyo Electron Limited, Mitsubishi Gas Chemical Company Inc.Inventors: Hideto Gotoh, Takayuki Niuya, Hiroyuki Mori, Hiroshi Matsunaga, Fukusaburo Ishihara, Yoshiya Kimura, Ryuji Sotoaka, Takuya Goto, Tetsuo Aoyama, Kojiro Abe
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Patent number: 6500270Abstract: A resist film removing composition used in the manufacture of a thin film circuit element having an organic insulation film which comprises 50 to 70% by weight of an alkanolamine having 3 or more carbon atoms, 20 to 30% by weight of a water-miscible solvent and 10 to 20% by weight of water. The resist film removing composition can easily remove a resist film remaining after etching, without swelling the organic insulation film.Type: GrantFiled: October 21, 1998Date of Patent: December 31, 2002Assignees: Sharp Corporation, Mitsubishi Gas Chemical Company, Inc.Inventors: Masahiro Nohara, Yukihiko Takeuchi, Taimi Oketani, Taketo Maruyama, Tetsuya Karita, Hisaki Abe, Tetsuo Aoyama
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Patent number: 6462005Abstract: A cleaning agent for use in the manufacture of a semiconductor device comprising an aqueous solution containing a quarternary ammonium salt and a fluoro compound, or an aqueous solution containing a quarternary ammonium salt and a fluoro compound, as well as an organic solvent selected from the group consisting of amides, lactones, nitriles, alcohols and esters. In the semiconductor device manufacturing process, after forming a mask with a photoresist, a wiring structure is formed by dry etching of a conductive layer, wherein a protecting deposition film has been formed on side walls of the conductive layer. Use of the cleaning agent enables the protecting deposition film to be removed in a highly reliable manner with the surface of the conductive layer being decontaminated and cleaned such that no corrosion of the conductive layer occurs.Type: GrantFiled: January 5, 1995Date of Patent: October 8, 2002Assignees: Texas Instruments Incorporated, Mitsubishi Gas Chemical Company, Inc.Inventors: Hideto Gotoh, Tetsuo Aoyama, Rieko Nakano, Hideki Fukuda
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Patent number: 6458517Abstract: A photoresist stripping composition comprises (1) a nitrogen-containing organohydroxyl compound, (2) an alkylene glycol monoalkyl ether represented by the general formula: HO—(CpH2pO)q—R, wherein R is C1-C4 alkyl, p is 2 or 3, and q is 1, 2 or 3, (3) sugar or sugar alcohol, (4) a phosphorus-containing compound and (5) water. The photoresist stripping composition easily removes photoresist films on the inorganic substrate, and patterned photoresist films and photoresist residues remaining after etching and photoresist residues in a short period of time without corroding semiconductive materials, circuit-forming materials, insulating materials, etc.Type: GrantFiled: March 28, 2000Date of Patent: October 1, 2002Assignees: Sharp Kabushiki Kaisha, Mitsubishi Gas Chemical Company Inc.Inventors: Masahiro Nohara, Yukihiko Takeuchi, Hisaki Abe, Taketo Maruyama, Tetsuo Aoyama
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Patent number: 6440326Abstract: A resist removing composition comprising a quaternary ammonium hydroxide, a water-soluble amine, an alkylpyrrolidone and a sugar or sugar alcohol. The photoresist removing composition can easily remove (i) a photoresist layer applied onto an inorganic substrate, (ii) a remaining photoresist layer after dry etching or (iii) a photoresist residue after ashing, at a low temperature in a short time, and also enables hyperfine processing of a wiring pattern material to manufacture a high precision circuit pattern without corroding the material.Type: GrantFiled: March 13, 2000Date of Patent: August 27, 2002Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Taketo Maruyama, Hisaki Abe, Tetsuya Karita, Tetsuo Aoyama