Patents by Inventor Tetsuo Aoyama
Tetsuo Aoyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20020066465Abstract: The cleaning method described above is characterized by allowing a cleaning agent comprising an oxidizing agent, a chelating agent and a fluorine compound to flow on a surface of a material to be treated at a bigh speed to thereby clean the above surface. according to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.Type: ApplicationFiled: October 9, 2001Publication date: June 6, 2002Inventors: Hideto Gotoh, Takayuki Niuya, Hiroyuki Mori, Hiroshi Matsunaga, Fukusaburo Ishihara, Yoshiya Kimura, Ryuji Sotoaka, Takuya Goto, Tetsuo Aoyama, Kojiro Abe
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Publication number: 20020064963Abstract: The cleaning agent described above comprises a surfactant and an organic solvent, and the cleaning method described above is characterized by allowing the cleaning agent described above to flow on the surface of the material to be treated at a high speed to thereby clean the above surface. According to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.Type: ApplicationFiled: October 9, 2001Publication date: May 30, 2002Inventors: Hideto Gotoh, Takayuki Niuya, Hiroyuki Mori, Hiroshi Matsunaga, Fukusaburo Ishihara, Yoshiya Kimura, Ryuji Sotoaka, Takuya Goto, Tetsuo Aoyama, Kojiro Abe
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Patent number: 6372410Abstract: A resist stripping composition contains 0.001 to 0.5% by weight of a fluorine compound, 50 to 99% by weight of an ether solvent and the balance being substantially water. With such a specific content range of the ether solvent, the resist stripping composition shows reduced corrosive properties when diluted with water in the rinsing step as well as shows complete removal of resist residues without causing corrosion of wiring materials and substrate materials.Type: GrantFiled: September 25, 2000Date of Patent: April 16, 2002Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Kazuto Ikemoto, Kojiro Abe, Tetsuo Aoyama
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Publication number: 20020009674Abstract: A photoresist stripping composition comprises (1) a nitrogen-containing organohydroxyl compound, (2) an alkylene glycol monoalkyl ether represented by the general formula: HO—(CpH2pO)q—R, wherein R is C1-C4 alkyl, p is 2 or 3, and q is 1, 2 or 3, (3) sugar or sugar alcohol, (4) a phosphorus-containing compound and (5) water. The photoresist stripping composition easily removes photoresist films on the inorganic substrate, and patterned photoresist films and photoresist residues remaining after etching and photoresist residues in a short period of time without corroding semiconductive materials, circuit-forming materials, insulating materials, etc.Type: ApplicationFiled: March 28, 2000Publication date: January 24, 2002Inventors: Masahiro Nohara, Yukihiko Takeuchi, Hisaki Abe, Taketo Maruyama, Tetsuo Aoyama
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Publication number: 20010013502Abstract: There is provided a resist film removing composition used in a manufacture of a thin film circuit element having an organic insulation film that can remove a resist film remaining after etching easily without swelling the organic insulation film. The resist film removing composition comprises 50 to 90% by weight of an alkanolamine having 3 or more carbon atoms, 8 to 40% by weight of a water-miscible solvent and 2 to 30% by weight of water.Type: ApplicationFiled: October 21, 1998Publication date: August 16, 2001Applicant: SHARP CORPORATION; MITSUBISHI GAS CHEMICAL COMPANY INCORPORATEDInventors: MASAHIRO NOHARA, YUKIHIKO TAKEUCHI, TAIMI OKETANI, TAKETO MARUYAMA, TETSUYA KARITA, HISAKI ABE, TETSUO AOYAMA
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Patent number: 6265309Abstract: A cleaning agent for use in producing semiconductor devices. The cleaning agent is an aqueous solution containing (A) a fluorine-containing compound, (B) a salt of boric acid, (C) a water-soluble organic solvent, and optionally, (D) a specific quaternary ammonium salt or (D′) a specific ammonium salt of an organic carboxylic acid or a specific amine salt of an organic carboxylic acid. The polymeric deposit inside and around the via holes and on the side wall of the conductive line pattern formed during the dry etching process can be effectively removed by using the cleaning agent without affecting the dimensions of the via holes and the conductive line pattern.Type: GrantFiled: May 10, 1999Date of Patent: July 24, 2001Assignees: Mitsubishi Gas Chemicals Co., Inc., Texas Instruments IncorporatedInventors: Hideto Gotoh, Tsuyoshi Matsui, Takayuki Niuya, Tetsuo Aoyama, Taketo Maruyama, Tetsuya Karita, Kojiro Abe, Fukusaburou Ishihara, Ryuji Sotoaka
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Patent number: 6199567Abstract: In a method of manufacturing a semiconductor device including a capacitor, a refractory metal layer is dry-etched using a resist pattern as a mask, whereby a first electrode pattern formed of refractory metal is provided. Sidewall of the first electrode pattern is cleaned using aqueous solution of a surface active agent. Through this procedure, etching residue formed on the sidewall of the electrode pattern is removed when the electrode pattern of refractory metal is produced through dry etching method.Type: GrantFiled: December 23, 1996Date of Patent: March 13, 2001Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Itaru Kanno, Tetsuo Aoyama, Mayumi Hada
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Patent number: 5972862Abstract: There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.Type: GrantFiled: July 28, 1997Date of Patent: October 26, 1999Assignee: Mitsubishi Gas ChemicalInventors: Yoshimi Torii, Shunji Sasabe, Masayuki Kojima, Kazuhisa Usuami, Takafumi Tokunaga, Kazusato Hara, Yoshikazu Ohira, Tsuyoshi Matsui, Hideto Gotoh, Tetsuo Aoyama, Ryuji Hasemi, Hidetoshi Ikeda, Fukusaburo Ishihara, Ryuji Sotoaka
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Patent number: 5962385Abstract: A cleaning liquid for semiconductor devices comprising 1.0 to 5% by weight of a fluorine compound of the formula R.sub.4 NF, wherein R is a hydrogen atom or a C.sub.1 -C.sub.4 alkyl group, 72 to 80% by weight of an organic solvent soluble in water, and the remaining amount being water. The cleaning liquid can rapidly and completely at a low temperature remove resist residues left remaining after dry etching and ashing in the wiring step in the production of semiconductor integrated circuits, and the cleaning liquid does not corrode wiring materials.Type: GrantFiled: August 13, 1998Date of Patent: October 5, 1999Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Taketo Maruyama, Ryuji Hasemi, Hidetoshi Ikeda, Tetsuo Aoyama
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Patent number: 5911836Abstract: A method of producing a semiconductor device, which includes applying a conductive metal film on a semiconductor wafer, applying a photoresist on the conductive metal film, removing the photoresist with a removing agent containing a fluorine compound or at least one basic component selected from the group consisting of a quaternary ammonium hydroxide, an alkanolamine and a mixture of an alkanolamine and a reducing agent, and cleaning the resultant semiconductor device by rinsing with a rinse comprising water and at least one peroxide compound. The method of the present invention can provide a highly accurate wiring circuit without corrosion of the conductive metal film.Type: GrantFiled: January 9, 1997Date of Patent: June 15, 1999Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Mayumi Hada, Ryuji Hasemi, Hidetoshi Ikeda, Tetsuo Aoyama
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Patent number: 5846695Abstract: A removing agent composition for a photoresist comprising 0.01 to 20% by weight of a quaternary ammonium hydroxide, 1 to 80% by weight of a nucleophilic amine having an oxidation-reduction potential, 0.5 to 20% by weight of a sugar and/or a sugar alcohol, and water in the remaining amount; and a process for producing a semiconductor integrated circuit comprising removing a photoresist applied onto an inorganic substrate by using the above removing agent composition.A layer of a photoresist applied onto an inorganic substrate, a layer of a photoresist remaining after dry etching of an inorganic substrate which is masked by the layer, or residues of a layer of a photoresist remaining after dry etching of an inorganic substrate which is masked by the layer and subsequent ashing of the layer can easily be removed at a low temperature in a short time. The wiring material of the circuit is not corroded at all, and ultra-fine working can be performed.Type: GrantFiled: March 26, 1997Date of Patent: December 8, 1998Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Keiichi Iwata, Tetsuya Karita, Tetsuo Aoyama
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Patent number: 5693599Abstract: A flux washing agent which comprises an aqueous solution containing a quaternary ammonium salt and hydrazine is disclosed. The flux washing agent is used in the production of printed circuit boards and the like. The flux washing agent has a washing ability, and a property to suppress etching of solder which are comparable with those of Flon 113 and trichloroethylene heretofore used as flux washing agents. Furthermore, the flux washing agent is safe, does not cause environmental pollution and has an excellent rinsing property.Type: GrantFiled: April 1, 1996Date of Patent: December 2, 1997Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Tetsuo Aoyama, Toshio Kondoh, Toshihiko Kobayashi, Kaoru Tsuyuki
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Patent number: 5630904Abstract: Stripping and cleaning agent for removing dry-etching photoresist residues, and a method for forming an aluminum based line pattern using the stripping and cleaning agent. The stripping and cleaning agent contains (a) from 5 to 50% by weight of an organocarboxlic ammonium salt or an amine carboxylate, represented by the formula [R.sup.1 ]m[COONH.sub.p (R.sup.2)q]n, where R.sup.1 is hydrogen, or an alkyl or aryl group having from 1 to 18 carbon atoms; R.sup.2 is hydrogen, or an alkyl group having from 1 to 4 carbon atoms; m and n independently are integers of from 1 to 4, p is integer of from 1 to 4, q is integer of from 1 to 3, and p+q=4 and (b) from 0.5 to 15% by weight of a fluorine compound. The inventive method is advantageously applied to treating a dry-etched semiconductor substrate with the stripping and cleaning agent. The semiconductor substrate comprises a semiconductor wafer having thereon a conductive layer containing aluminum.Type: GrantFiled: March 27, 1995Date of Patent: May 20, 1997Assignees: Mitsubishi Gas Chemical Co., Inc., Sharp Kabushiki KaishaInventors: Tetsuo Aoyama, Rieko Nakano, Akira Ishihama, Koichiro Adachi
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Patent number: 5538832Abstract: A developing solution comprising a specific amount of a quaternary ammonium hydroxide represented by the general formula [(R.sup.1).sub.3 N--R].sup.+ .multidot.OH.sup.- (R indicates an alkyl group having 1 to 3 carbon atoms or a hydroxy-substituted alkyl group having 1 to 3 carbon atoms, and R.sup.1 indicates an alkyl group having 1 to 3 carbon atoms) and, if necessary, a quaternary ammonium hydrogen carbonate represented by the general formula [(R.sup.1).sub.3 N--R].sup.+ .multidot.HCO.sub.3.sup.- (R and R.sup.1 are the same as the above) and having a pH in the range of 9 to 13, and a process for producing printed circuit boards using an organic alkali solution, are provided. The developing solution needs no defoaming agent because it causes little foaming. Printed circuit boards produced by using the developing solution have excellent finished accuracy. Therefore, fine circuits of printed circuit networks can be produced with stability.Type: GrantFiled: December 1, 1994Date of Patent: July 23, 1996Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Tetsuo Aoyama, Takeshi Nagasaka, Toshihiko Kobayashi, Naohito Yoshimura, Takashi Nakata, Youichi Takizawa
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Patent number: 5393386Abstract: The present invention-provides a method for preparing a high-purity aqueous quaternary ammonium hydroxide solution, and there is here disclosed this method for preparing the high-purity aqueous quaternary ammonium hydroxide solution which comprises reacting a quaternary ammonium organic acid salt with hydrogen peroxide, oxygen or an oxygen-containing gas in the presence of a platinum group metal catalyst to produce a quaternary ammonium inorganic acid salt, and then electrolyzing this inorganic acid salt by the use of an electrolytic tank having a cation exchange membrane.Type: GrantFiled: December 15, 1993Date of Patent: February 28, 1995Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Tetsuo Aoyama, Toshio Kondo, Yasushi Sugawara, Masahiro Miyake
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Patent number: 5338462Abstract: The present invention relates to specific activated carbon materials including from 1 to 5% by weight of nitrogen, from 3 to 30% by weight of oxygen and from 40 to 95% by weight of carbon, and having an average pore radius of from 15 to 30 .ANG., with the proviso that mesopores occupy at least 50% by volume based on the total pore volume, and also relates a process for the preparation thereof, and to the use thereof as catalysts.Type: GrantFiled: June 15, 1993Date of Patent: August 16, 1994Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Hisaki Abe, Toshio Kondoh, Hideki Fukuda, Mayumi Takahashi, Tetsuo Aoyama, Masahiro Miyake
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Patent number: 5242879Abstract: The present invention relates to specific activated carbon materials including from 1 to 5% by weight of nitrogen, from 3 to 30% by weight of oxygen and from 40 to 95% by weight of carbon, and having an average pore radius of from 15 to 30 .ANG., with the proviso that mesopores occupy at least 50% by volume based on the total pore volume, and also relates a process for the preparation thereof, and to the use thereof as catalysts.Type: GrantFiled: December 11, 1991Date of Patent: September 7, 1993Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Hisaki Abe, Toshio Kondoh, Hideki Fukuda, Mayumi Takahashi, Tetsuo Aoyama, Masahiro Miyake
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Patent number: 5174816Abstract: A surface treating agent for an aluminum line pattern substrate is disclosed, comprising an aqueous solution containing 0.01 to 15% by weight of quaternary ammonium hydroxide represented by the general formula: ##STR1## wherein R is an alkyl group having 1 to 3 carbon atoms, or a hydroxy-substituted alkyl group having 1 to 3 carbon atoms, and R.sup.1, R.sup.2 and R.sup.3 are independently an alkyl group having 1 to 3 carbon atoms, and 0.1 to 20% by weight of sugar or sugar alcohol. This agent can inhibit the after-corrosion of aluminum effectively.Type: GrantFiled: May 23, 1991Date of Patent: December 29, 1992Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Tetsuo Aoyama, Mayumi Takahashi, Toshio Kondo, Hideki Fukuda
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Patent number: 5175078Abstract: A positive type photoresist developer which comprises an aqueous solution of quaternary ammonium hydroxide represented by the general formula; ##STR1## (wherein all the symbols are as defined in the appended claims) and hydrazine or hydrazine and a nonionic surfactant is disclosed.The developer can form a fine pattern having a high degree of resolution and can provide an excellent profile with few irregularities in pattern dimensions.Type: GrantFiled: March 18, 1992Date of Patent: December 29, 1992Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Tetsuo Aoyama, Susumu Kaneko
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Patent number: 4776929Abstract: A process for production of high purity quarternary ammonium hydroxides, comprising electrolyzing quarternary ammonium hydrogencarbonates represented by the general formula: ##STR1## (wherein the symbols are as defined in the appended claims) in an electrolytic cell comprising an anode compartment and a cathode compartment defined by a cation exchange membrane. In accordance with this process, high purity quarternary ammonium hydroxides can be produced with high electrolytic efficiency and further without causing corrosion of equipment. Since the quarternary ammonium hydroxides produced by the present invention are of high purity, they can be effectively used as, for example, cleaners, etchants or developers for wafers in the production of IC and LSI in the field of electronics and semiconductors.Type: GrantFiled: November 12, 1987Date of Patent: October 11, 1988Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Tetsuo Aoyama, Eiji Shima, Jiro Ishikawa, Naoto Sakurai