Abstract: A gettering layer forming apparatus configured to form a gettering layer on a substrate includes a substrate holder configured to hold the substrate; a wrapping film configured to be brought into contact with the substrate held by the substrate holder and polish the substrate; a base configured to support the wrapping film, and configured to be moved in a vertical direction and rotated around a vertical axis; and a water supply configured to supply water onto the substrate held by the substrate holder.

Abstract: This resist pattern forming method comprises: a step for coating a substrate with a chemically amplified resist; a subsequent step for forming a latent image of a pattern by exposing the resist film on the substrate; a subsequent step for irradiating the exposed resist film selectively with infrared light from a first heating source having wavelengths 2.0-6.0 ?m; a subsequent step for heating the substrate by means of a second heating source that is different from the first heating source for the purpose of diffusing an acid that is produced in the resist film by exposure; and a subsequent step for forming a pattern of the resist film by supplying a developer liquid to the substrate. Consequently, roughening of sidewalls of the resist pattern can be suppressed.

Abstract: An abnormal processing can be appropriately detected in a processing of supplying a preset gas to a substrate as a processing target. A hydrophobizing unit U5 includes a processing vessel 21 configured to accommodate therein a wafer W as a processing target; an opening/closing unit 60 (first supply unit) configured to supply air (first gas) into the processing vessel 21; a gas supply unit 30 (second supply unit) configured to supply a HMDS gas (second gas), having a relative humidity different from that of the air, into the processing vessel 21; and a controller 100 (control unit). The controller 100 is configured to determine a state of a gas within the processing vessel 21 based on a relative humidity obtained after a supply of the air by the opening/closing unit 60 and a supply of the HMDS gas by the gas supply unit 30 are performed.

Abstract: An abnormal processing can be appropriately detected in a processing of supplying a preset gas to a substrate as a processing target. A hydrophobizing unit U5 includes a processing vessel 21 configured to accommodate therein a wafer W as a processing target; an opening/closing unit 60 (first supply unit) configured to supply air (first gas) into the processing vessel 21; a gas supply unit 30 (second supply unit) configured to supply a HMDS gas (second gas), having a relative humidity different from that of the air, into the processing vessel 21; and a controller 100 (control unit). The controller 100 is configured to determine a state of a gas within the processing vessel 21 based on a relative humidity obtained after a supply of the air by the opening/closing unit 60 and a supply of the HMDS gas by the gas supply unit 30 are performed.

Abstract: This resist pattern forming method comprises: a step for coating a substrate with a chemically amplified resist; a subsequent step for forming a latent image of a pattern by exposing the resist film on the substrate; a subsequent step for irradiating the exposed resist film selectively with infrared light from a first heating source having wavelengths 2.0-6.0 ?m; a subsequent step for heating the substrate by means of a second heating source that is different from the first heating source for the purpose of diffusing an acid that is produced in the resist film by exposure; and a subsequent step for forming a pattern of the resist film by supplying a developer liquid to the substrate. Consequently, roughening of sidewalls of the resist pattern can be suppressed.

Abstract: A heating device has a heating chamber 3. An initial temperature distribution is created in a surface of a substrate (wafer W) when the substrate is carried into the heating chamber 3 . . . Temperature distribution creating means (heating lamps 2) creates a preheating temperature distribution in the substrate supported on a cooling plate 4 at a waiting position before the substrate is carried into the heating chamber 3 so as to level out the initial temperature distribution.

Abstract: The hydrophobicizing apparatus includes a vaporizing surface forming member of which surface is located in a vaporizing room; a vaporizing surface heating unit that heats the vaporizing surface forming member; a liquid chemical supply port that supplies a liquid chemical for a hydrophobicizing process on the surface of the vaporizing surface forming member; a gas inlet port that introduces a carrier gas into the vaporizing room; an outlet port that supplies a hydrophobicizing gas vaporized in the vaporizing room; and a processing chamber that performs the hydrophobicizing process on a substrate accommodated therein by the hydrophobicizing gas supplied through the outlet port. With this configuration, the hydrophobicizing gas of a high concentration can be supplied onto the substrate. Further, since the stored liquid chemical is not in contact with the carrier gas when a process is not being performed, degradation of the liquid chemical is suppressed.

Abstract: A substrate processing system provided with a plurality of modules for substrate processing. The substrate processing system includes an inspection substrate, which is transferred to the plurality of modules for processing therein, provided with a plurality of measuring devices which carry out a plurality of different kinds of measurements and a recorder which records measured data provided by the measuring devices. The substrate processing system includes a controller that executes control operations to subject the inspection substrate to predetermined processes in the plurality of modules. The controller obtains through data communication a plurality of different kinds of measured data recorded by the recorder as the inspection substrate is processed by the predetermined processes by the plurality of modules.

Abstract: There are provided an adhesion promoting process using a comparatively small amount of an adhesion promoting gas for processing a workpiece, an adhesion promoting device for carrying out the adhesion promoting process, a coating and developing system including the adhesion promoting device, and a storage medium storing a program specifying a set of instructions for carrying out the adhesion promoting process.

Abstract: A substrate heating apparatus includes a top plate arranged above a hot plate so that a vertical space is formed between the hot plate and the top plate. The top plate has an evacuated internal chamber serving as a vacuum insulating layer that suppresses heat transfer from a first surface of the top plate facing the hot plate to a second surface of the top plate opposite to the first surface. When heating the substrate, a gas flow flowing through the space between the hot plate and the top plate is generated.

Abstract: A disclosed heating apparatus includes a heating chamber configured to heat a substrate placed in the heating chamber with a heat plate opposing the substrate; a gas stream forming portion that creates a gas stream along a top surface of the substrate in the heating chamber; and a pair of first plate members respectively located between an inner side wall of the heating chamber and a first substrate edge opposing the inner side wall, and between another inner side wall of the heating chamber and a second substrate edge opposing the other inner side wall.

Abstract: A vaporizing apparatus includes a heating plate disposed in a container to heat and vaporize a liquid chemical, a gas supply unit configured to supply a carrier gas carrying the chemical vaporized by the heating plate, into the container, a first detecting unit configured to detect the supply of the carrier gas into the container, and a second detecting unit configured to detect the vaporization of the liquid chemical by the heating plate.

Abstract: A substrate heating apparatus includes a top plate arranged above a hot plate so that a vertical space is formed between the hot plate and the top plate. The top plate has an evacuated internal chamber serving as a vacuum insulating layer that suppresses heat transfer from a first surface of the top plate facing the hot plate to a second surface of the top plate opposite to the first surface. When heating the substrate, a gas flow flowing through the space between the hot plate and the top plate is generated.

Abstract: A heating apparatus is configured to include a hot plate at which a substrate is placed, a top plate opposed to the substrate, a gas discharging part provided on one end side of the hot plate for discharging gas between the hot plate and the top plate, an exhaust part provided to be opposed to the gas discharging part with the hot plate interposed therebetween, and a heating part independently heating a first region and a second region of the substrate. A heating process is performed with good within-wafer uniformity by forming an unidirectional flow to heat the first region and the second region at different temperatures.

Abstract: This invention provides a wafer-type temperature sensor capable of eliminating the need for an A/D converter, adapting itself to automation and improving the heat resistance to measure temperature distribution of the upper surface of a wafer, a temperature measuring device using the sensor, a thermal processor having a temperature measurement function and a temperature measurement method. The wafer-type temperature sensor comprises a wafer and a plurality of temperature sensors arranged in regions which are formed by segmenting the upper surface of the wafer into a plurality of regions. Each of the temperature sensors includes an oscillation circuit for oscillating a frequency signal corresponding to the temperature of its own region within a frequency band that is different for every region in response to input of power supply voltage.

Abstract: The hydrophobicizing apparatus includes a vaporizing surface forming member of which surface is located in a vaporizing room; a vaporizing surface heating unit that heats the vaporizing surface forming member; a liquid chemical supply port that supplies a liquid chemical for a hydrophobicizing process on the surface of the vaporizing surface forming member; a gas inlet port that introduces a carrier gas into the vaporizing room; an outlet port that supplies a hydrophobicizing gas vaporized in the vaporizing room; and a processing chamber that performs the hydrophobicizing process on a substrate accommodated therein by the hydrophobicizing gas supplied through the outlet port. With this configuration, the hydrophobicizing gas of a high concentration can be supplied onto the substrate. Further, since the stored liquid chemical is not in contact with the carrier gas when a process is not being performed, degradation of the liquid chemical is suppressed.

Abstract: In a heat treatment device including a heating chamber having a heating plate heating a semiconductor wafer, a cooling plate cooling the wafer heated by the heating chamber, and a transporting device transporting the wafer into and from the heating chamber, the cooling plate is provided with a coolant passage, a plurality of projections carrying the wafer with a space between the wafer and the surface of the cooling plate, and suction holes neighboring to the respective projections and connected to a suction device.

Abstract: A substrate heating apparatus includes a top plate arranged above a hot plate so that a vertical space is formed between the hot plate and the top plate. The top plate has an evacuated internal chamber serving as a vacuum insulating layer that suppresses heat transfer from a first surface of the top plate facing the hot plate to a second surface of the top plate opposite to the first surface. When heating the substrate, a gas flow flowing through the space between the hot plate and the top plate is generated.

Abstract: A substrate heating apparatus includes a top plate arranged above a hot plate so that a vertical space is formed between the hot plate and the top plate. The top plate has an evacuated internal chamber serving as a vacuum insulating layer that suppresses heat transfer from a first surface of the top plate facing the hot plate to a second surface of the top plate opposite to the first surface. When heating the substrate, a gas flow flowing through the space between the hot plate and the top plate is generated.

Abstract: A substrate heating apparatus includes a top plate arranged above a hot plate so that a vertical space is formed between the hot plate and the top plate. The top plate has an evacuated internal chamber serving as a vacuum insulating layer that suppresses heat transfer from a first surface of the top plate facing the hot plate to a second surface of the top plate opposite to the first surface. When heating the substrate, a gas flow flowing through the space between the hot plate and the top plate is generated.