Abstract: A heating apparatus 2 comprises a housing 20; a flat heating chamber 4 which is provided in the housing 2 and adapted to heat a wafer W used as a substrate, with one side of the heating chamber 4 opening for carrying in and carrying out the wafer; and a heating plates 44, 45 provided in the heating chamber 4 such that the wafer W can be heated from both above and below. A cooling plate 3 is provided in the housing 20 located in the vicinity of the opening of the heating chamber 4, for cooling the wafer W after being heated by the heating plates 44, 45. Additionally, a carrying means is provided in the housing 20 for carrying the wafer W between an upper position of the cooling plate 3 and the interior of the heating chamber 4 such that a heat treatment for the wafer W can be performed with the wafer W being held in the heating chamber 4.

Abstract: Efficiency of inspection work for inspecting all the plurality of modules of a substrate processing system is improved and the management of information obtained by inspecting the modules is facilitated. A substrate processing system 50 provided with a plurality of modules for processing a substrate and capable of carrying out the measurement of the plurality of modules for inspection includes an inspection substrate WS provided with a plurality of measuring means 30 to 34 for carrying out a plurality of different kinds of measurement and a recording means 42 for recording measured data provided by the measuring means, and a control means 36 that executes control operations to subject the inspection substrate WS to predetermined processes in the plurality of modules. The control means 36 obtains a plurality of different kinds of measured data recorded in the recording means from the inspection substrate WS processed by the predetermined processes by the plurality of modules through data communication.

Abstract: There are provided an adhesion promoting process using a comparatively small amount of an adhesion promoting gas for processing a workpiece, an adhesion promoting device for carrying out the adhesion promoting process, a coating and developing system including the adhesion promoting device, and a storage medium storing a program specifying a set of instructions for carrying out the adhesion promoting process.

Abstract: A disclosed heating apparatus includes a heating chamber configured to heat a substrate placed in the heating chamber with a heat plate opposing the substrate; a gas stream forming portion that creates a gas stream along a top surface of the substrate in the heating chamber; and a pair of first plate members respectively located between an inner side wall of the heating chamber and a first substrate edge opposing the inner side wall, and between another inner side wall of the heating chamber and a second substrate edge opposing the other inner side wall.

Abstract: A heating device 1 includes a flat heating chamber 3 provided with a side opening. A substrate W is carried in a horizontal position through the side opening into the processing chamber 3, and is subjected to a heating process in the heating chamber 3. the heating chamber 3 is provided with heating plates 34 and 35 respectively provided with heating elements 34a and 35a, and a cooling mechanism 2 for cooling the heating plates 34 and 35. A controller 7 controls the cooling mechanism such that the heating plates 34 and 35 are cooled after the completion of the heating process for heating the substrate W and before a succeeding substrate W is carried into the heating chamber 3, and controls the heating elements 34a and 35a such that the heating plates 34 and 35 are heated at a processing temperature after the succeeding substrate has been carried into the heating chamber 3.

Abstract: A heating device has a heating chamber 3. An initial temperature distribution is created in a surface of a substrate (wafer W) when the substrate is carried into the heating chamber 3 . . . . Temperature distribution creating means (heating lamps 2) creates a preheating temperature distribution in the substrate supported on a cooling plate 4 at a waiting position before the substrate is carried into the heating chamber 3 so as to level out the initial temperature distribution.

Abstract: In a heat treatment device including a heating chamber having a heating plate heating a semiconductor wafer, a cooling plate cooling the wafer heated by the heating chamber, and a transporting device transporting the wafer into and from the heating chamber, the cooling plate is provided with a coolant passage, a plurality of projections carrying the wafer with a space between the wafer and the surface of the cooling plate, and suction holes neighboring to the respective projections and connected to a suction device.

Abstract: A hot plate for heating a substrate placed on the hot plate. The hot plate comprises a silicon base having pin insertion holes through which support pins for supporting a substrate from below and elevating the substrate above the hot plate pass; a heater composed of a resistor made of a metal film deposited on the back surface of the silicon base; and a temperature sensor, composed of a resistor made of a metal film deposited on the back or front surface of the silicon base. The front surface of the silicon base has gap-making protrusions for making a gap between the hot plate and a substrate placed on the gap-making protrusions.

Abstract: This invention provides a wafer-type temperature sensor capable of eliminating the need for an A/D converter, adapting itself to automation and improving the heat resistance to measure temperature distribution of the upper surface of a wafer, a temperature measuring device using the sensor, a thermal processor having a temperature measurement function and a temperature measurement method. The wafer-type temperature sensor comprises a wafer and a plurality of temperature sensors arranged in regions which are formed by segmenting the upper surface of the wafer into a plurality of regions. Each of the temperature sensors includes an oscillation circuit for oscillating a frequency signal corresponding to the temperature of its own region within a frequency band that is different for every region in response to input of power supply voltage.

Abstract: A heating apparatus 2 comprises a housing 20; a flat heating chamber 4 which is provided in the housing 2 and adapted to heat a wafer W used as a substrate, with one side of the heating chamber 4 opening for carrying in and carrying out the wafer; and a heating plates 44, 45 provided in the heating chamber 4 such that the wafer W can be heated from both above and below. A cooling plate 3 is provided in the housing 20 located in the vicinity of the opening of the heating chamber 4, for cooling the wafer W after being heated by the heating plates 44, 45. Additionally, a carrying means is provided in the housing 20 for carrying the wafer W between an upper position of the cooling plate 3 and the interior of the heating chamber 4 such that a heat treatment for the wafer W can be performed with the wafer W being held in the heating chamber 4.

Abstract: A substrate heating apparatus includes a top plate arranged above a hot plate so that a vertical space is formed between the hot plate and the top plate. The top plate has an evacuated internal chamber serving as a vacuum insulating layer that suppresses heat transfer from a first surface of the top plate facing the hot plate to a second surface of the top plate opposite to the first surface. When heating the substrate, a gas flow flowing through the space between the hot plate and the top plate is generated.

Abstract: A heating apparatus is configured to include a hot plate at which a substrate is placed, a top plate opposed to the substrate, a gas discharging part provided on one end side of the hot plate for discharging gas between the hot plate and the top plate, an exhaust part provided to be opposed to the gas discharging part with the hot plate interposed therebetween, and a heating part independently heating a first region and a second region of the substrate. A heating process is performed with good within-wafer uniformity by forming an unidirectional flow to heat the first region and the second region at different temperatures.

Abstract: A heat processing apparatus comprises a hot plate for putting the substrate on or near its surface, a ceiling with a first and second concentric regions with a first and second heat pipes, respectively, opposite to the hot plate surface, a member surrounding a space between the hot plate and the ceiling, a gas flow generator supplying gas to the a region from a circumference of the hot plate to a center of the ceiling, and a temperature control mechanism for controlling a regional temperature of the first region in such a manner that a heat emission is greater from a center of the substrate than from a circumference of the substrate, thus heating a substrate to a uniform temperature all over its surface.

Abstract: An object of the present invention is to heat a substrate at a uniform temperature all over its surface. The heat processing apparatus of the present invention comprises: a hot plate for putting the substrate on or near its surface; a ceiling with a first and second concentric regions with a first and second heat pipes, respectively, opposite to the hot plate surface; a surrounding member for surrounding a space between the hot plate and the ceiling; gas flow generation means for generating a gas flow in the space from a circumference of the hot plate to a center of the ceiling; and a temperature control mechanism for controlling a regional temperature of the first region. The temperature control mechanism controls the regional temperature in such a manner that a heat emission is greater from a center of the substrate than from a circumference of the substrate.

Abstract: A liquid dispensing bag includes a bag body portion having a surface wall and a back wall formed of a flexible material having high gas barrier properties, and an elongated spout portion in which the surface wall and said back wall are projected in an elongated manner from a lower portion of the bag body portion. A flowpassage division area has the surface wall and the back wall welded integrally to divide a flowpassage toward the lower portion of the bag body portion. The flow passage division area is formed at a position close to the lower portion from the center of the bag body portion. The flowpassage division area is provided upwardly thereof with a pressure regulating area in which the surface wall and the back wall are welded. The flowpassage division area is formed in the central portion with a central flowpassage.

Abstract: In a bladed rotor of the kind in which each blade has curved side surfaces and having fingers fitted in depressions of a shell and an opening of a core, the depressions of the shell and the opening of the core for receiving therein corresponding fingers of the blades are shaped and arranged so as to have, with respect to an elevational view of the rotor, longitudinal axes which coincide with straight lines extending radially through the center of the rotor, respectively. A die assembly for forming such depressions or openings in the shell or core is also provided. In such a die assembly, first and second die sections are adjustable in relative circumferential position for thereby adjusting the relative circumferential position relationship between the first and second groups of depressions or openings in the shell or core to be produced.