Patents by Inventor Tetsuo Iijima

Tetsuo Iijima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5051970
    Abstract: An overwritable magneto-optic recording system has a recording medium with a substrate, a recording magnetic film and a reproducing magnetic film deposited on the substrate. The reproducing magnetic film has a Curie temperature lower than that of the recording magnetic film, and coercive force Hc higher than that of the recording magnetic film. In a write process, a magnetic head writes data magnetically on the recording magnetic film, then, in a transfer process, an optical head (which is positioned downstream along the relative movement of the recording medium and the optical head) heats the recording medium higher than the Curie temperature of the reproducing magnetic film so that the reproducing magnetic film loses its magnetic property. During the cooling period after heating, recorded bits in the recording magnetic film are transferred to the reproducing magnetic film which restores its magnetic property.
    Type: Grant
    Filed: May 2, 1988
    Date of Patent: September 24, 1991
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Osamu Ishii, Koutarou Nonaka, Iwao Hatakeyama, Tetsuo Iijima
  • Patent number: 4831424
    Abstract: An insulated gate semiconductor device contains a protective element for protecting the gate electrode of an insulated gate field effect transistor. The protective element is formed of the same semiconductor layer as that of the gate electrode of the insulated gate field effect transistor and is formed integrally with the gate electrode on an insulating film formed on the surface of a semiconductor substrate.
    Type: Grant
    Filed: June 15, 1987
    Date of Patent: May 16, 1989
    Assignee: Hitachi, Ltd.
    Inventors: Isao Yoshida, Takeaki Okabe, Mitsuo Ito, Kazutoshi Ashikawa, Tetsuo Iijima
  • Patent number: 4688323
    Abstract: A method for fabrication a vertical MOSFET which contains a protective element for protecting the gate electrode of an insulated gate field effect transistor. The protective element is formed of the same semiconductor layer as that of the gate electrode of the insulated gate field effect transistor and is formed integrally with the gate electrode on an insulating film formed on the surface of a semiconductor substrate.
    Type: Grant
    Filed: October 31, 1985
    Date of Patent: August 25, 1987
    Assignee: Hitachi, Ltd.
    Inventors: Isao Yoshida, Takeaki Okabe, Mitsuo Ito, Kazutoshi Ashikawa, Tetsuo Iijima