Patents by Inventor Tetsuo Ono
Tetsuo Ono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11658011Abstract: A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.Type: GrantFiled: January 22, 2020Date of Patent: May 23, 2023Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Yoshiharu Inoue, Tetsuo Ono, Michikazu Morimoto, Masaki Fujii, Masakazu Miyaji
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Patent number: 11417501Abstract: The plasma processing apparatus has a plasma processing chamber where plasma processing of the sample is performed, and plasma power supply that supplies radio frequency electric power for generating plasma. The radio frequency electric power is time modulated by a pulse wave having a first period and a second period that are repeated periodically. The pulse wave of the first period has first amplitude and the pulse wave of the second period has second amplitude which is a limited value smaller than the first amplitude. The extinction of the plasma, which is generated during the first period having the first amplitude, is maintained during the second period having the second amplitude with a predetermined dissociation.Type: GrantFiled: September 9, 2016Date of Patent: August 16, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Masayuki Shiina, Naoki Yasui, Tetsuo Ono
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Publication number: 20210398777Abstract: The plasma processing apparatus has a plasma processing chamber where plasma processing of the sample is performed, and plasma power supply that supplies radio frequency electric power for generating plasma. The radio frequency electric power is time modulated by a pulse wave having a first period and a second period that are repeated periodically. The pulse wave of the first period has first amplitude and the pulse wave of the second period has second amplitude which is a limited value smaller than the first amplitude. The extinction of the plasma, which is generated during the first period having the first amplitude, is maintained during the second period having the second amplitude with a predetermined dissociation.Type: ApplicationFiled: September 2, 2021Publication date: December 23, 2021Inventors: Masayuki SHIINA, Naoki YASUI, Tetsuo ONO
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Patent number: 11018014Abstract: A dry etching method for isotropically etching each of SiGe layers selectively relative to each of Si layers in a laminated film is provided. The laminated film can include Si layers and SiGe layers alternately and repeatedly laminated. Each of the SiGe layers can be plasma-etched with plasma generated by a pulse-modulated radio frequency power using NF3 gas.Type: GrantFiled: June 29, 2016Date of Patent: May 25, 2021Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Ze Shen, Tetsuo Ono, Hisao Yasunami
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Patent number: 10727088Abstract: The present invention provides a plasma processing apparatus having a radio frequency power supply supplying time-modulated radio frequency power which is controllable widely with high precision, and a plasma processing method using the plasma processing apparatus. The plasma processing apparatus includes: a vacuum chamber; a first radio frequency power supply for generating plasma in the vacuum chamber; a sample holder disposed in the vacuum chamber, on which a sample is placed; and a second radio frequency power supply supplying radio frequency power to the sample holder, wherein at least one of the first radio frequency power supply and the second radio frequency power supply supplies time-modulated radio frequency power, one of parameters of controlling the time-modulation has two or more different control ranges, and one of the control ranges is a control range for a high-precision control.Type: GrantFiled: October 4, 2016Date of Patent: July 28, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Michikazu Morimoto, Yasuo Ohgoshi, Yuuzou Oohirabaru, Tetsuo Ono
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Publication number: 20200161092Abstract: A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.Type: ApplicationFiled: January 22, 2020Publication date: May 21, 2020Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yoshiharu Inoue, Tetsuo Ono, Michikazu Morimoto, Masaki Fujii, Masakazu Miyaji
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Patent number: 10600619Abstract: A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.Type: GrantFiled: April 6, 2016Date of Patent: March 24, 2020Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yoshiharu Inoue, Tetsuo Ono, Michikazu Morimoto, Masaki Fujii, Masakazu Miyaji
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Patent number: 10559481Abstract: Provided are a plasma processing apparatus with a radio-frequency power supply supplying temporally modulated intermittent radio-frequency power which can be controlled with high precision in a wide repetition frequency band, and a plasma processing method using the plasma processing apparatus. A plasma processing apparatus includes: a vacuum vessel; a plasma generating section plasma in the vacuum vessel; a stage installed in the vacuum vessel and mounted with a sample; and a radio-frequency power supply applying temporally modulated intermittent radio-frequency power to the stage, wherein the radio-frequency power supply has two or more different frequency bands and temporally modulates the radio-frequency power by a repetition frequency which has the same range of analog signals used in each of the frequency band.Type: GrantFiled: February 29, 2016Date of Patent: February 11, 2020Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Michikazu Morimoto, Yasuo Ohgoshi, Yuuzou Oohirabaru, Tetsuo Ono
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Patent number: 10522331Abstract: A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.Type: GrantFiled: October 25, 2016Date of Patent: December 31, 2019Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yasuo Ohgoshi, Michikazu Morimoto, Yuuzou Oohirabaru, Tetsuo Ono
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Publication number: 20180366335Abstract: Controllability of ion bombardment on a substrate is further improved to achieve uniformity of the etched substrate across the substrate surface. A plasma processing apparatus performs plasma generation and control of energy of ion bombardment on the substrate independently, generates plasma by continuous discharge or pulse discharge, and switches at least two bias powers having different frequencies, and alternately and repeatedly applies the at least two bias powers having different frequencies to a sample stage while the plasma is being generated.Type: ApplicationFiled: August 24, 2018Publication date: December 20, 2018Inventors: Junya TANAKA, Tetsuo ONO
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Patent number: 10121640Abstract: The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses.Type: GrantFiled: January 22, 2015Date of Patent: November 6, 2018Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Satoru Muto, Tetsuo Ono, Yasuo Ohgoshi, Hirofumi Eitoku
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Patent number: 10090162Abstract: Controllability of ion bombardment on a substrate is further improved to achieve uniformity of the etched substrate across the substrate surface. A plasma processing apparatus performs plasma generation and control of energy of ion bombardment on the substrate independently, generates plasma by continuous discharge or pulse discharge, and switches at least two bias powers having different frequencies, and alternately and repeatedly applies the at least two bias powers having different frequencies to a sample stage while the plasma is being generated.Type: GrantFiled: November 2, 2016Date of Patent: October 2, 2018Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Junya Tanaka, Tetsuo Ono
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Publication number: 20180047573Abstract: Controllability of ion bombardment on a substrate is further improved to achieve uniformity of the etched substrate across the substrate surface. A plasma processing apparatus performs plasma generation and control of energy of ion bombardment on the substrate independently, generates plasma by continuous discharge or pulse discharge, and switches at least two bias powers having different frequencies, and alternately and repeatedly applies the at least two bias powers having different frequencies to a sample stage while the plasma is being generated.Type: ApplicationFiled: November 2, 2016Publication date: February 15, 2018Inventors: Junya Tanaka, Tetsuo Ono
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Publication number: 20170092468Abstract: The plasma processing apparatus has a plasma processing chamber where plasma processing of the sample is performed, and plasma power supply that supplies radio frequency electric power for generating plasma. The radio frequency electric power is time modulated by a pulse wave having a first period and a second period that are repeated periodically. The pulse wave of the first period has first amplitude and the pulse wave of the second period has second amplitude which is a limited value smaller than the first amplitude. The extinction of the plasma, which is generated during the first period having the first amplitude, is maintained during the second period having the second amplitude with a predetermined dissociation.Type: ApplicationFiled: September 9, 2016Publication date: March 30, 2017Inventors: Masayuki SHIINA, Naoki YASUI, Tetsuo ONO
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Publication number: 20170040143Abstract: A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.Type: ApplicationFiled: October 25, 2016Publication date: February 9, 2017Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yasuo Ohgoshi, Michikazu Morimoto, Yuuzou Oohirabaru, Tetsuo Ono
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Publication number: 20170025289Abstract: The present invention provides a plasma processing apparatus having a radio frequency power supply supplying time-modulated radio frequency power which is controllable widely with high precision, and a plasma processing method using the plasma processing apparatus. The plasma processing apparatus includes: a vacuum chamber; a first radio frequency power supply for generating plasma in the vacuum chamber; a sample holder disposed in the vacuum chamber, on which a sample is placed; and a second radio frequency power supply supplying radio frequency power to the sample holder, wherein at least one of the first radio frequency power supply and the second radio frequency power supply supplies time-modulated radio frequency power, one of parameters of controlling the time-modulation has two or more different control ranges, and one of the control ranges is a control range for a high-precision control.Type: ApplicationFiled: October 4, 2016Publication date: January 26, 2017Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Michikazu Morimoto, Yasuo Ohgoshi, Yuuzou Oohirabaru, Tetsuo Ono
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Patent number: 9514967Abstract: A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.Type: GrantFiled: January 16, 2013Date of Patent: December 6, 2016Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yasuo Ohgoshi, Michikazu Morimoto, Yuuzou Oohirabaru, Tetsuo Ono
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Publication number: 20160307765Abstract: A dry etching method for isotropically etching each of SiGe layers selectively relative to each of Si layers in a laminated film is provided. The laminated film can include Si layers and SiGe layers alternately and repeatedly laminated. Each of the SiGe layers can be plasma-etched with plasma generated by a pulse-modulated radio frequency power using NF3 gas.Type: ApplicationFiled: June 29, 2016Publication date: October 20, 2016Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Ze Shen, Tetsuo Ono, Hisao Yasunami
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Publication number: 20160225587Abstract: A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.Type: ApplicationFiled: April 6, 2016Publication date: August 4, 2016Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yoshiharu Inoue, Tetsuo Ono, Michikazu Morimoto, Masaki Fujii, Masakazu Miyaji
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Publication number: 20160181118Abstract: A plasma processing method capable of controlling an etching rate of a SiN film and obtaining high selectivity to a SiO2 film and Si at the same time performs etch-back of a SiN film as a processing object of a film structure including a SiO2 film and the SiN film or a Si film and the SiN film on a surface of a substrate placed in a processing chamber by using inductively couple plasma formed in the processing chamber by supplying process gas including CHF3 or CF4 and O2 gas into the processing chamber inside a vacuum vessel and supplying RF power of 7-50 MHz to an induction coil surrounding an outer circumference of the processing chamber.Type: ApplicationFiled: September 11, 2015Publication date: June 23, 2016Inventors: Yutaka KUDOU, Tetsuo ONO