Abstract: An imaging apparatus is capable of performing a normal imaging operation of capturing a subject image to generate image data and a dark subtraction operation of performing a dark subtraction on the image data to generate repaired image data. The imaging apparatus includes: an image sensor configured to generate image data during the normal imaging operation when a shutter is opened under a predetermined photographing condition; a recorder configured to record the image data and photographing condition data indicating the photographing condition in a recording medium; and a controller configured to control the image sensor. The controller performs the normal imaging operation a plurality of times, and then performs the dark subtraction operation on each piece of image data using a dark image corresponding to each photographing condition.

Abstract: According to one embodiment, a sensor-securing apparatus has a frame having a sensor-mount region to hold an image sensor that generates heat while operating. The frame has a first adhesive-applying hole and a plurality of second adhesive-applying holes. The first adhesive-applying hole opens in the sensor-mount region and faces the center part of the image sensor. The second adhesive-applying holes are smaller than the first adhesive-applying hole, open in the sensor-mount region and are arranged around the first adhesive-applying hole. Adhesive is filled in the first adhesive-applying hole and the second adhesive-applying holes. The adhesive secures the image sensor to the frame.

Abstract: According to one embodiment, a camera includes a case provided with an opening portion and a front unit fixed to the case to cover the opening portion. The front unit includes a sensor holder having a sensor support unit which is housed in the case and to which an image sensor is fixed and a fitting portion protruding from the sensor support unit to the outside of the case, a front cover provided with a fitting hole in which the fitting portion is fitted and covering the opening portion, and a fixing unit which detachably fixes the front cover to the sensor holder.

Abstract: According to one embodiment, a sensor-securing apparatus has a frame having a sensor-mount region to hold an image sensor that generates heat while operating. The frame has a first adhesive-applying hole and a plurality of second adhesive-applying holes. The first adhesive-applying hole opens in the sensor-mount region and faces the center part of the image sensor. The second adhesive-applying holes are smaller than the first adhesive-applying hole, open in the sensor-mount region and are arranged around the first adhesive-applying hole. Adhesive is filled in the first adhesive-applying hole and the second adhesive-applying holes. The adhesive secures the image sensor to the frame.

Abstract: An apparatus for protecting a head suspension assembly includes an actuator unit including a plurality of suspensions to which a plurality of heads are fixed, respectively, an actuator block, and a coil-arm unit including a coil. A first protection member includes a first support unit that supports a part of the actuator unit. A second support unit supports a connector provided at a cable extending from a part of the actuator unit. A second protection member includes a fixing unit that fixes the connector to a predetermined position. The first protection member and the second protection member are formed in freely opening and closing manner.

Abstract: A gas generator, including a housing made of metal and including an initiator shell and a closure shell; at least one combustion chamber formed in the housing and configured to be packed with a gas generant that generates a high temperature gas by burning; at least one filter member arranged around the at least one combustion chamber; at least one igniter located in the housing and configured to ignite and burn the gas generant in the at least one combustion chamber; and a plurality of gas discharge holes formed in the housing and configured to discharge gas generated in the at least one combustion chamber.

Abstract: A gas generator is provided with a metal housing constituted by an initiator shell and a closure shell, a combustion chamber which is formed inside the housing and into which gas generants generating a high-temperature gas through combustion are loaded, a filter member disposed around the combustion chamber, an igniter mounted into the housing and igniting and burning the gas generants inside the combustion chamber and a plurality of gas discharge openings formed on the housing and discharging the gas generated in the combustion chamber.

Abstract: In the manufacture of a semiconductor device having a high-performance and high-reliability, a silicon nitride film 17 for self alignment, which film is formed to cover the gate electrode of a MISFET, is formed at a substrate temperature of 400° C. or greater by plasma CVD using a raw material gas including monosilane and nitrogen. A silicon nitride film 44 constituting a passivation film is formed at a substrate temperature of about 350° C. by plasma CVD using a raw material gas including monosilane, ammonia and nitrogen. The hydrogen content contained in the silicon nitride film 17 is smaller than that contained in the silicon nitride film 44, making it possible to suppress hydrogen release from the silicon nitride film 17.

Abstract: An apparatus for protecting a head suspension assembly includes an actuator unit including a plurality of suspensions to which a plurality of heads are fixed, respectively, an actuator block, and a coil-arm unit including a coil. A first protection member includes a first support unit that supports a part of the actuator unit. A second support unit supports a connector provided at a cable extending from a part of the actuator unit. A second protection member includes a fixing unit that fixes the connector to a predetermined position. The first protection member and the second protection member are formed in freely opening and closing manner.

Abstract: A terminal pressing unit collectively presses terminals of a plurality of suspensions constituting a head suspension assembly including the suspensions and an actuator block against terminals of the actuator block. A terminal connecting unit connects the terminals of the suspensions with the terminals of the actuator block.

Abstract: A storage media for automating a control and a computer system including the storage media, which abolishes the restriction between the hardware models and the software processes, and in which a desired software process can be simply utilized in any hardware models, and a computer system including the storage media are provided. In the intelligent disk 1 having the disk 3 for storing information and the electronic circuit portion 2 for processing the information, the disk stores a plurality of information to be used in an external system, and wherein the electronic circuit portion distinguishes the information stored in the disk, which matches with the external system. Also, the disk unit or the electronic circuit further includes an emulator for matching the system program with the external system.

Abstract: A fitting structure of a gas generator (1) which is provided with a metal housing (10) constituted by an initiator shell (9) and a closure shell (8), a combustion chamber (12) which is formed inside the housing (10) and into which gas generants (11) generating a high-temperature gas through combustion are loaded, a filter member (13) disposed around the combustion chamber (12), an igniter (14) mounted into the housing (10) and igniting and burning the gas generants (11) inside the combustion chamber (12), and a plurality of gas discharge openings (7) formed in the housing (10) and discharging the gas generated in the combustion chamber (12), wherein either or both of the initiator shell (9) and the closure shell (8) constituting the housing (10) are provided with semi-spherical or semi-oval end plate portions (18, 16) and cylindrical portions (17, 15) having a diameter D formed continuously from these end plate portions (18, 16), a gas generator whose H/D of a ratio of the bottom distance H between the end pl

Abstract: The present invention provides a gas generator capable of sufficiently loading gas generants into a combustion chamber, while the safety of the housing is secured, and also burning the gas generants inside the combustion chamber uniformly and effectively. A gas generator A is provided with a metal housing 3 having an initiator shell 1 and a closure shell 2, a combustion chamber 5 into which gas generants 4 are loaded and an igniter 7 for igniting and burning the gas generants 4, in which the initiator shell 1 and the closure shell 2 have semi-spherical end plate portions 10 and 14, H/D of a ratio of H, a length of the housing to D, an outer diameter of the cylindrical portions 9 and 13 continuously formed from the end plate portions 10 and 14 is in the range from 0.4 to 1.

Abstract: A gas generator (30) is provided with a metal housing (3) constituted by an initiator shell (1) and a closure shell (2), a combustion chamber (5) which is formed inside the housing (3) and into which gas generants (4) generating a high-temperature gas through combustion are loaded, a filter member (6) disposed around the combustion chamber (5), an igniter (7) mounted into the housing (3) and igniting and burning the gas generants (4) inside the combustion chamber (5) and a plurality of gas discharge openings (8a, 8b) formed on the housing (3) and discharging the gas generated in the combustion chamber (5), and in which either or both of the initiator shell (1) and the closure shell (2) constituting the housing (3) are provided with semi-spherical or semi-oval end plate portions (14, 10) and cylindrical portions (13, 9) having a diameter D formed continuously from these end plate portions (14, 10), H/D or a ratio of the bottom distance H between the end plate portion (14) of the initiator shell (1) and that (

Abstract: In the manufacture of a semiconductor device having a high-performance and high-reliability, a silicon nitride film 17 for self alignment, which film is formed to cover the gate electrode of a MISFET, is formed at a substrate temperature of 400° C. or greater by plasma CVD using a raw material gas including monosilane and nitrogen. A silicon nitride film 44 constituting a passivation film is formed at a substrate temperature of about 350° C. by plasma CVD using a raw material gas including monosilane, ammonia and nitrogen. The hydrogen content contained in the silicon nitride film 17 is smaller than that contained in the silicon nitride film 44, making it possible to suppress hydrogen release from the silicon nitride film 17.

Abstract: In the manufacture of a semiconductor device having a high-performance and high-reliability, a silicon nitride film 17 for self alignment, which film is formed to cover the gate electrode of a MISFET, is formed at a substrate temperature of 400° C. or greater by plasma CVD using a raw material gas including monosilane and nitrogen. A silicon nitride film 44 constituting a passivation film is formed at a substrate temperature of about 350° C. by plasma CVD using a raw material gas including monosilane, ammonia and nitrogen. The hydrogen content contained in the silicon nitride film 17 is smaller than that contained in the silicon nitride film 44, making it possible to suppress hydrogen release from the silicon nitride film 17.

Abstract: A gas generator comprising a housing (3) made of metal and having an initiator shell (1) and a closure shell (2), (a) combustion chamber(s) (5, 5a, 5b) formed in the housing (3) and packed with gas generant (4) that generates high temperature gas by burning, (a) filter member(s) (6, 6a, 6b) arranged around the combustion chamber(s) (5, 5a, 5b), (an) igniter device(s) (7, 7a, 7b) put in the housing (3) for igniting and burning the gas generant (4) in the combustion chamber(s) (5, 5a, 5b), and a plurality of gas discharge holes (8) formed at the housing (3), for discharging gas generated in the combustion chamber(s) (5, 5a, 5b), wherein either or both of the initiator shell (1) and the closure shell (2) forming the housing (3) has a head portion (14, 10) of a semispherical form or an oval semispherical form and a cylindrical portion (13, 9) of a diameter (D) formed continuously from the head portion (14, 10), and wherein a ratio H/D between the diameter D of the cylindrical portion (13, 9) and a distance H betw

Abstract: The present invention provides a control method of a rotary storage medium having an electronic circuit that controls connection between an electronic circuit block and an external apparatus to enhance the performance of the entire system, and a system thereof. The system is an intelligent disk system including an intelligent disk having double-surface structure that stores information and is detachable from a drive unit, wherein an electronic circuit is mounted on at least one surface or between both surfaces of the intelligent disk and the electronic circuit is provided with a CPU, and wherein the system controls the intelligent disk so that contents of the disk surfaces of the intelligent disk may be transferred to or loaded in an external apparatus at the time of the intelligent disk rotating or mechanically operating (S36-S37) and the CPU may control the external apparatus when the intelligent disk is not operating.

Abstract: A storage medium having electronic circuits which contains programs for automatic startup of a system by insertion or installation of the storage medium having electronic circuits, and totally achieves commercial display of various services, internet services such as contract procedure, purchase of goods and guide and retrieval, and user information management, an information management method and in an information processing system using such a storage medium.

Abstract: In the manufacture of a semiconductor device having a high-performance and high-reliability, a silicon nitride film 17 for self alignment, which film is formed to cover the gate electrode of a MISFET, is formed at a substrate temperature of 400° C. or greater by plasma CVD using a raw material gas including monosilane and nitrogen. A silicon nitride film 44 constituting a passivation film is formed at a substrate temperature of about 350° C. by plasma CVD using a raw material gas including monosilane, ammonia and nitrogen. The hydrogen content contained in the silicon nitride film 17 is smaller than that contained in the silicon nitride film 44, making it possible to suppress hydrogen release from the silicon nitride film 17.