Abstract: In the method of driving a solid-state image sensing device, for each vertical blanking (VBL), the signal charges of a first pixel group composed of photosensitive pixels of odd ordinal numbers counted in the vertical direction of the photosensitive region and the signal charges of a second pixel group composed of photosensitive pixels of even ordinal numbers counted in the same way are reversed in the vertical transfer direction, so that the signal charges of the first and second pixel groups can be outputted from the same charge detecting circuit for each field. Further, unnecessary accumulated charges in the pixel groups in the photosensitive region are cleared off in response to an accumulated charge clear pulse.

Abstract: Disclosed is a powder of silicon nitride particles having a specific surface area of from 5 to 20 m.sup.2 /g. When an aqueous solution of a polyvinyl alcohol having a mean degree of polymerization of X and a degree of saponification of Y (mol %) is adsorbed to the powder, the amount of saturated adsorption at 20.degree. C. is not higher than the amount of adsorption to be represented by:Amount of Adsorption (mg/m.sup.2)=0.000112X+0.523Y/100-0.207 (1)Also disclosed is a low-viscosity silicon nitride-containing aqueous slurry containing said powder.

Abstract: A method and system for estimating an inertia of 2-mass system constituted by a motor and a load connected through a torsionable shaft during operation. The estimating method is implemented as follows: (a) obtaining a deviation between a motor speed preset value and a motor speed in a deviation section; (b) inputting the deviation from the deviation section into an adding section through a speed control amplifier; (c) obtaining a motor generating torque by inputting the output from the speed control amplifier and the load torque estimate into an adding section; (e) inputting the motor generating torque into a model of the 2-mass system; and (f) obtaining an inertia error by inputting the load torque estimate into the inertia error estimating section. With this method, it becomes possible to estimate the inertia of the 2-mass system even if the load inertia is varied during operation.

Abstract: A photographed image reproduction apparatus for reproducing photographed images recorded on a film includes an image reproducer for reproducing an image on the film, a music player for playing a music suitable for the image, and controller for controlling the image reproducer and the music player so as to execute the image reproduction and the music play coincidentally. The controller has a calculator device for calculating an image reproduction time and a selector device for selecting a music suitable for a reproduced image among a repertoire of musics.

Abstract: Carbon fibers are provided essentially consisting of liquid crystal pitch based continuous monofilaments having an average filament diameter of 30 .mu.m or greater. The carbon fibers can have modulus of elasticity of 80,000 Kgf/mm.sup.2 or greater and tensile strength of 200 Kgf/mm.sup.2 or greater. The carbon fibers can be used as a multifilament fiber consisting of plural monofilaments as in the case of conventional carbon fibers but it is particularly preferable that a number of constituting monofilaments is one.

Abstract: Column direction transfer sections provided every photosensitive element trains are such that the transfer direction of the odd columns and that of the even columns are opposite to each other. A conversion section for reversing the transfer order is connected to at least one final transfer stage of the column direction transfer sections, and charges transferred are thus transported to row direction transfer sections. Thus, it is possible to transfer and output, in the same direction, signal charges transferred in directions opposite to each other every columns to the two row direction transfer sections in such a manner that those signal charges are distributed thereto. For this reason, the number of transfer stages of each row direction transfer section can be reduced to one half, the dimension every stage can be twice larger than that of the prior art, and the operating frequency can be also reduced to one half.

Abstract: Solid-state image sensing device is provided with a synthesizing section for synthesizing odd-field signal charges and even-field signal charges. The synthesizing section is a transfer path formed outside of the photosensitive region or vertical transfer paths formed in the photosensitive region. For the signal charge synthesis through vertical transfer path, after the integration, the signal charges are read simultaneously from the odd-line pixel group and the even-line pixel group. Further, it is possible to select either the method of outputting the odd-field signal charges and the even-field signal charges separately or the method of outputting the synthesized odd- and even-field signal charges.

Abstract: In a vector control apparatus for an induction motor, a divider (13) is provided which receives an exciting instruction .lambda..sub.2d */M* from a secondary magnetic flux instruction amplifier (1.sub.1) which outputs .lambda..sub.2d */M* according to an angular frequency .omega..sub.r derived from a speed detector (4.sub.3). The divider (13) receives an exciting inductance variation A.sub.Mn from the exciting inductance M' compensation circuit (12, 12') to divide A.sub.Mn by .lambda..sub.2d */M* so that the derived output value is supplied to a first-order advance element calculation block (1.sub.2) so that a target value i.sub.1d * in a d-axis component in a primary current of the induction motor is derived.

Abstract: A system and method for controlling the speed of a motor operating in an extremely low speed range and having a rotary pulse encoder which outputs a pulse whenever a rotation axle of the motor has rotated through a predetermined angle. The extremely low speed range is defined such that its pulse interval of the output pulses is longer than a speed control period of the system are disclosed, load torque estimated value observer is provided. The least order disturbance observer includes a first calculating block which calculates an estimated value of the motor speed n.sub.M ' (j) of a motor model on the basis of a torque command and a load torque estimated value: a second calculating block which calculates an average value of the motor speed at each pulse interval n.sub.M ' (j).

Abstract: There is provided a solid-state imaging device suitable for miniaturization.

Abstract: A charge detection circuit includes a p-type semiconductor substrate, a reference voltage source for generating a reference voltage having a predetermined voltage difference with respect to the potential of the semiconductor substrate, a first n.sup.+ -type semiconductor region formed in the semiconductor substrate, for storing a carrier packet, a second n.sup.

Abstract: A method for drying erythritol crystals having a moisture content of from 1 to 10% by weight to reduce to the moisture content of 0.15% by weight or below, which comprises drying under fluidized state wherein a temperature of a gas to be used in the fluidized drying is controlled within a range of from 10.degree. to 60.degree. C. at least until the moisture content of said crystals is reduced to 0.5% by weight or below.The moisture content of erythritol crystals (moisture content: 1 to 10% by weight) can be highly efficiently reduced to 0.15% by weight or below in a stable form without deteriorating the crystalline properties and form by fluidized drying said erythritol crystals with the use of a gas flow of a relatively low specific temperature.

Abstract: A SiAlON-based sintered body having a high mechanical strength and fracture toughness, as well as an excellent oxidation resistance, is provided. The SiAlON-based sintered body comprises 5 to 50% by weight of a first crystal phase of RE.alpha.-SiAlON represented by RE.sub.x (Si, Al).sub.12 (O, N).sub.16, where RE stands for at least one modifying rare earth element selected from the group consisting of Ho, Er, Tm, Yb and Lu and x has a value of 0<x.ltoreq.2, 30 to 90% by weight of a second crystal phase of .beta.-SiAlON represented by Si.sub.6-z Al.sub.z O.sub.z N.sub.8-z (0<z.ltoreq.4.2), and 1 to 50% by weight of a third crystal phase containing at least one rare earth element RE selected from the group consisting of Ho, Er, Tm, Yb and Lu, optionally together with 1 to 20% by weight of a crystal phase of .alpha.-silicon nitride.

Abstract: Disclosed is a layer-built solid state image sensing device comprising: a first semiconductor layer of a first conductivity type; a plurality of optoelectro transducing storage elements having a first optoelectro transduction layer of a second conductivity type opposite to the first conductivity type selectively formed within regions isolated pixel column by pixel column by a first isolating layer of the first conductivity type on the first semiconductor layer surface of the first conductivity type; charge transfer elements having a first impurity layer of the second conductivity type formed in columns a regular distance away from optoelectro transducing storage element columns within the isolating areas on the first semiconductor layer surface, and a transfer conductive electrode layer buried within an insulating film selectively formed on the surface other than the first optoelectro transducing layer and a light shielding electrode provided to enclose the transfer electrode also buried within the insulating

Abstract: There is disclosed a solid-state imaging device comprising: a column direction transfer section arranged in parallel to photosensitive element trains, and capable of transferring, in column directions opposite to each other, signal charges produced in photosensitive elements; row direction transfer sections arranged on the both end sides of the column direction transfer section, respectively, and at least one transfer order conversion section provided between the row direction transfer section on one side and the column direction transfer section.

Abstract: In a solid state image sensor device including photoelectric conversion elements and charge transfer devices, an impurity layer constituting a surface layer formed on each of the charge storage layers of the photoelectric convertion elements extends in the lateral direction of the semiconductor layer so that, when viewed from stop, an end of the surface impurity layer coincides with an end of a transfer electrode of each of the charge transfer devices and serves as an isolation layer, thereby obviating problems associated with the degradation of performance of the sensor device due to expansion of the isolation layer by thermal diffusion.

Abstract: There is provided a charge transfer device comprising a shift register comprised of a plurality of shift stages directly connected to each other, phase pulses for a multi-phase control pulse being delivered to the shift stages, respectively, a transfer control pulse being delivered to the shift register stage arranged at one end of the plurality of shift stages; and a transfer unit having a plurality of transfer electrodes provided in correspondence with the shift stages of the shift register, transfer pulses being delivered from the shift stages of the shift register to the transfer electrodes, respectively, to apply transfer pulses in a predetermined order from the shift stages of the shift register to the transfer electrodes of the transfer unit, respectively, to thereby sequentially transfer signal charges stored below the transfer electrodes in a predetermined direction.

Abstract: A solid-state image pickup device, effectively preventing dark current, includes a photosensitive pixel section formed at the surface portion of a semiconductor layer of one conductivity type. Each pixel consists of an impurity layer of an opposite conductivity to generate signal carriers; an element isolation layer formed adjacent each photosensitive pixel to isolate the photosensitive pixels from each other; transfer electrodes for transferring the signal carriers; and a storage electrode formed at the upper portion of each photosensitive pixel and responsive to the application of a voltage to allow carriers of opposite polarity to that of the signal carriers, to be injected from the element isolation layer into the surface portion of each photosensitive pixel. The storage electrode has an opening at a portion corresponding to an optical path to which the light is incident.

Abstract: A solid-state image pickup device includes a semiconductor substrate of a first conductivity type, and a photoelectric cell, including an impurity region of a second conductivity type formed on the semiconductor substrate, to produce a signal charge corresponding to the quantity of incident light at a first junction surface between the impurity region of the second conductivity type and the semiconductor substrate. The device further includes an impurity region of the first conductivity type formed on the semiconductor substrate to effect isolation between the impurity regions of the second conductivity type, and a charge transfer unit for transferring the signal charge produced in the photoelectric cell.

Abstract: A charge coupled device includes a main transfer channel having an n-type region formed in the surface area of a p-type silicon substrate and a plurality of electrodes formed over and insulated from the transfer channel and arranged in the direction in which the transfer channel extends. The charge coupled device further includes an n.sup.+-type sub-transfer channel formed in the n-type region with an impurity concentration higher than that of the n-type region.