Abstract: A substrate for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.

Abstract: An electromagnetic-wave absorber comprising a base material and an electromagnetic-wave absorption layer provided on the base material. The electromagnetic-wave absorption layer contains at least i) a polymeric material having a glass transition temperature (Tg) of from −15° C. to 110° C. and a number-average molecular weight (Mn) of from 3,000 to 1,000,000 and ii) an inorganic material. Also provided is a process for producing the absorber.

Abstract: BaTiO3—PbTiO3 series single crystal is single-crystallized by heating BaTiO3—PbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3—PbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity.

Abstract: The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (00l) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2:

Abstract: BaTiO3—PbTiO3 series single crystal is single-crystallized by heating BaTiO3—PbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3—PbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity.

Abstract: A ferroelectric thin film element comprises a substrate and an epitaxial ferroelectric thin film provided on the substrate. The epitaxial ferroelectric thin film satisfies a relation z/z0>1.003. A crystal face parallel to a crystal face of a surface of the substrate among crystal faces of the epitaxial ferroelectric thin film is taken as a Z crystal face, a face spacing of the Z crystal face is taken as z and a space of the Z crystal face of a material constituting the epitaxial ferroelectric thin film in a bulk state is taken as z0, and also satisfies a relation 0.997≦x/x0≦1.003. One of crystal faces of the epitaxial ferroelectric thin film perpendicular to the Z crystal face is taken as an X crystal face, a face spacing of the X crystal face is taken as x and a face spacing of the X crystal face of the material constituting the epitaxial ferroelectric thin film in a bulk state is taken as x0.

Abstract: A substrate for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.

Abstract: An electromagnetic-wave absorber comprising a base material and an electromagnetic-wave absorption layer provided on the base material. The electromagnetic-wave absorption layer contains at least i) a polymeric material having a glass transition temperature (Tg) of from −15° C. to 110° C. and a number-average molecular weight (Mn) of from 3,000 to 1,000,000 and ii) an inorganic material. Also provided is a process for producing the absorber.

Abstract: A substrate for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.

Abstract: A method of manufacturing an actuator omprises the steps of bonding a piezoelectric film formed on a single crystal substrate to a diaphragm structure member and removing the single crystal substrate therefrom to manufacture the actuator. The single crystal substrate is a substrate having bonded portions where a plurality of single crystal substrates are bonded together.

Abstract: A substrata for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.

Abstract: BaTiO3—PbTiO3 series single crystal is single-crystallized by heating BaTiO3—PbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3—PbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity.

Abstract: A piezoelectric structure includes a vibrational plate; a piezoelectric film; the vibrational plate including a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials, and oxide layers sandwiching the aforementioned layer, the piezoelectric film has a single orientation crystal or monocrystal structure.

Abstract: A piezoelectric element structure comprises a supporting substrate, and a piezoelectric film supported on the supporting substrate, in which the piezoelectric film contains a first layer, and a second layer having zirconium, each provided with perovskite structure, and formed to be in contact with each other or laminated through an intermediate layer, and the temperature is set at 500° C. or more at the time of thin film formation so as to provide the piezoelectric film, and a quick cooling is given from the thin film formation temperature at least to 450° C. with a cooling speed of 30° C./min or more for the formation thereof. The piezoelectric film thus formed is in a small thickness as compared with the conventional piezoelectric film, but presents a large piezoelectric constant, hence making it possible to perform efficient microprocessing thereof reliably.

Abstract: A method for manufacturing a piezoelectric film type actuator, which is provided with a piezoelectric film and an oscillating plate structural member bonded therefor, comprises the steps of forming a piezoelectric film on an intermediate transfer member; bonding the piezoelectric film on the intermediate member and the oscillating plate structural member; and peeling off the intermediate transfer member from the piezoelectric film. Through the steps thus arranged, it becomes possible to enhance the bonding strength and durability of the piezoelectric film and the oscillating plate structural member without using bonding agent in the manufacture of a highly reliable piezoelectric film type actuator.

Abstract: An electromagnetic-wave absorber comprising a base material and an electromagnetic-wave absorption layer provided on the base material. The electromagnetic-wave absorption layer contains at least i) a polymeric material having a glass transition temperature (Tg) of from −15° C. to 110° C. and a number-average molecular weight (Mn) of from 3,000 to 1,000,000 and ii) an inorganic material. Also provided is a process for producing the absorber.

Abstract: An electrophotographic photosensitive member comprises a support and a photosensitive layer provided on the support.

Abstract: The present invention includes an electrophotographic photosensitive member having a surface layer containing a polyphenylene resin, and a process cartridge and an electrophotographic apparatus both having the electrophotographic photosensitive member.

Abstract: The present invention relates to a toner which forms a high quality image, which is stable in various environments, i.e. under high humidity, or low temperature and low humidity conditions, and has a fine particle diameter as well as a sharp particle size distribution, and to a process for producing the same. The toner contains at least a binder resin and a colorant, and has (i) a number average particle diameter of from 0.5 to 6.0 .mu.m, (ii) the coefficient of variation of number distribution of not more than 20%, and (iii) a methanol-soluble resin component in an amount of 0.01-10% based on the weight of the toner, and the methanol-soluble resin component contains a polymer composition having an organic acid group, and an acid value of from 50 to 600 mgKOH/g.

Abstract: A toner has at least 100 parts by weight of binder resin and 0.1 to 15 parts by weight of colorant. The toner has a number average particle size (Dn) of 0.5 to 6.0 .mu.m, a particle size distribution coefficient (volume average particle size (Dv) / number average particle size (Dn)) of 1.0 to 1.3 and a variation coefficient of particle number distribution of 20% or less.The toner contains 0.1 to 5.0% by weight of methanol-soluble resin component extracted by the first Soxhlet extraction with methanol and 50 to 99% by weight of THF-soluble resin component extracted by a second Soxhlet extraction with tetrahydrofuran (THF) after the Soxhlet extraction with methanol, wherein the maximum glass transition point (Tg.sub.2) of the methanol-soluble resin component and the glass transition point (Tg.sub.1) of the THF-soluble resin component satisfies the following relation;0 (.degree. C.)<Tg.sub.2 -Tg.sub.1 .ltoreq.150 (.degree. C.)and50 (.degree. C.).ltoreq.Tg.sub.1.