Patents by Inventor Tetsuro Komatsu
Tetsuro Komatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230278427Abstract: A display panel is capable of displaying at least one meter image including a pointer image constituting a pointer and a mark image constituting a mark that the pointer is adapted to point to. A processor controls display status of the mark image. The processor causes the mark image to be displayed on the display panel in a first display mode when the pointer image does not point to the mark image and causes the mark image to be displayed on the display panel in a second display mode when the pointer image points to the mark image. The first display mode and the second display mode are different.Type: ApplicationFiled: March 1, 2023Publication date: September 7, 2023Applicant: Panasonic Intellectual Property Management Co., Ltd.Inventors: Hiroya OUE, Yasuhiro TAKADA, Tetsuro KOMATSU, Tatsuya MURAOKA, Motoki ASARI, Mayu OFUJI
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Patent number: 9620669Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting chip and a fluorescent material layer. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a resin layer. The semiconductor layer includes a light emitting layer, a first major surface, and a second major surface formed on a side opposite to the first major surface. The fluorescent material layer is provided on the first major surface and has a larger planer size than the light emitting chip.Type: GrantFiled: October 2, 2014Date of Patent: April 11, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Yoshiaki Sugizaki, Hideki Shibata, Akihiro Kojima, Masayuki Ishikawa, Hideo Tamura, Tetsuro Komatsu
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Patent number: 9496471Abstract: A semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.Type: GrantFiled: August 10, 2015Date of Patent: November 15, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Yosuke Akimoto, Yoshiaki Sugizaki, Hideyuki Tomizawa, Masanobu Ando, Akihiro Kojima, Gen Watari, Naoya Ushiyama, Tetsuro Komatsu, Miyoko Shimada, Hideto Furuyama
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Patent number: 9478722Abstract: A method for manufacturing a light emitting device includes forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate. A dielectric film on a second surface side opposite to the first surface of the multilayer body is formed having first and second openings on a p-side electrode and an n-side electrode. A seed metal on the dielectric film and an exposed surface of the first and second openings form a p-side metal interconnect layer and an n-side metal interconnect layer separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal. A resin is formed in a space from which the seed metal is removed.Type: GrantFiled: October 5, 2015Date of Patent: October 25, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Yoshiaki Sugizaki, Hideki Shibata, Masayuki Ishikawa, Hideo Tamura, Tetsuro Komatsu, Akihiro Kojima
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Publication number: 20160027982Abstract: A method for manufacturing a light emitting device includes forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate. A dielectric film on a second surface side opposite to the first surface of the multilayer body is formed having first and second openings on a p-side electrode and an n-side electrode. A seed metal on the dielectric film and an exposed surface of the first and second openings form a p-side metal interconnect layer and an n-side metal interconnect layer separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal. A resin is formed in a space from which the seed metal is removed.Type: ApplicationFiled: October 5, 2015Publication date: January 28, 2016Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yoshiaki SUGIZAKI, Hideki SHIBATA, Masayuki ISHIKAWA, Hideo TAMURA, Tetsuro KOMATSU, Akihiro KOJIMA
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Patent number: 9240531Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer.Type: GrantFiled: December 22, 2014Date of Patent: January 19, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Naoya Ushiyama, Gen Watari, Masanobu Ando, Tetsuro Komatsu
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Publication number: 20150364664Abstract: A semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.Type: ApplicationFiled: August 10, 2015Publication date: December 17, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yosuke AKIMOTO, Yoshiaki SUGIZAKI, Hideyuki TOMIZAWA, Masanobu ANDO, Akihiro KOJIMA, Gen WATARI, Naoya USHIYAMA, Tetsuro KOMATSU, Miyoko SHIMADA, Hideto FURUYAMA
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Patent number: 9184357Abstract: A method for manufacturing a light emitting device includes forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate. A dielectric film on a second surface side opposite to the first surface of the multilayer body is formed having first and second openings on a p-side electrode and an n-side electrode. A seed metal on the dielectric film and an exposed surface of the first and second openings form a p-side metal interconnect layer and an n-side metal interconnect layer separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal. A resin is formed in a space from which the seed metal is removed.Type: GrantFiled: December 2, 2011Date of Patent: November 10, 2015Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Yoshiaki Sugizaki, Hideki Shibata, Masayuki Ishikawa, Hideo Tamura, Tetsuro Komatsu, Akihiro Kojima
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Patent number: 9136439Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.Type: GrantFiled: February 28, 2013Date of Patent: September 15, 2015Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Yosuke Akimoto, Yoshiaki Sugizaki, Hideyuki Tomizawa, Masanobu Ando, Akihiro Kojima, Gen Watari, Naoya Ushiyama, Tetsuro Komatsu, Miyoko Shimada, Hideto Furuyama
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Publication number: 20150115306Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer.Type: ApplicationFiled: December 22, 2014Publication date: April 30, 2015Inventors: Naoya USHIYAMA, Gen WATARI, Masanobu ANDO, Tetsuro KOMATSU
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Patent number: 8952409Abstract: According to one embodiment, a semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer.Type: GrantFiled: February 27, 2013Date of Patent: February 10, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Naoya Ushiyama, Gen Watari, Masanobu Ando, Tetsuro Komatsu
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Publication number: 20150017750Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting chip and a fluorescent material layer. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a resin layer. The semiconductor layer includes a light emitting layer, a first major surface, and a second major surface formed on a side opposite to the first major surface. The fluorescent material layer is provided on the first major surface and has a larger planer size than the light emitting chip.Type: ApplicationFiled: October 2, 2014Publication date: January 15, 2015Inventors: Yoshiaki Sugizaki, Hideki Shibata, Akihiro Kojima, Masayuki Ishikawa, Hideo Tamura, Tetsuro Komatsu
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Publication number: 20140361324Abstract: A light emitting device includes a light emitting element disposed on a portion of a first lead frame element, a first resin including a fluorescent material, and a second resin. The first resin is above the light emitting element. The second resin is between the first resin and the first lead frame element. In some embodiments, the second resin includes a filler material that reflects light emitted by the light emitting element. In some embodiments, the light emitting device includes a protective diode connected in reverse parallel with the light emitting element. In some embodiments, a transparent resin may be disposed first and second resins.Type: ApplicationFiled: February 28, 2014Publication date: December 11, 2014Inventors: Naoya USHIYAMA, Kazuhiro INOUE, Kenji SHIMOMURA, Tetsuro KOMATSU, Toshihiro KUROKI, Toshihiro KOMEYA, Kazuhiro TAMURA, Yoshiharu TSUBOI, Teruo TAKEUCHI, Kazuhisa IWASHITA
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Patent number: 8884327Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting chip and a fluorescent material layer. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a resin layer. The semiconductor layer includes a light emitting layer, a first major surface, and a second major surface formed on a side opposite to the first major surface. The fluorescent material layer is provided on the first major surface and has a larger planer size than the light emitting chip.Type: GrantFiled: September 21, 2010Date of Patent: November 11, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Yoshiaki Sugizaki, Hideki Shibata, Akihiro Kojima, Masayuki Ishikawa, Hideo Tamura, Tetsuro Komatsu
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Patent number: 8753907Abstract: According to one embodiment, a method for manufacturing a semiconductor light emitting device includes: preparing a metal plate including first frames and second frames, the first frames and the second frames being alternately arranged and spaced from each other, a light emitting element being fixed to each of the first frames, the light emitting element being connected to an adjacent one of the second frames via a metal wire; molding a first resin on the metal plate, the first resin covering the first frame, the second frame, and the light emitting element; forming in the first resin a groove defining a resin package including the first frame, the second frame, and the light emitting element; filling a second resin inside the groove; and forming the resin package with an outer edge of the first resin covered with the second resin by cutting the second resin along the groove.Type: GrantFiled: March 7, 2012Date of Patent: June 17, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Kenji Shimomura, Tetsuro Komatsu
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Patent number: 8686464Abstract: According to one embodiment, an LED module includes a substrate, an interconnect layer, a light emitting diode (LED) package, and a reflection member. The interconnect layer is provided on the substrate. The LED package is mounted on the interconnect layer. The reflection member is provided on a region in the substrate where the LED package is not mounted and has a property of reflecting light emitted from the LED package. The LED package includes a first lead frame, a second lead frame, an LED chip, and a resin body. The first lead frame and the second lead frame are arranged apart from each other on the same plane. The LED chip is provided above the first lead frame and the second lead frame, with one terminal connected to the first lead frame and one other terminal connected to the second lead frame.Type: GrantFiled: March 22, 2011Date of Patent: April 1, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Kazuhiro Inoue, Kazuhisa Iwashita, Teruo Takeuchi, Gen Watari, Tetsuro Komatsu, Tatsuo Tonedachi
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Publication number: 20140070248Abstract: According to one embodiment, a semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer.Type: ApplicationFiled: February 27, 2013Publication date: March 13, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Naoya USHIYAMA, Gen WATARI, Masanobu ANDO, Tetsuro KOMATSU
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Publication number: 20130313590Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.Type: ApplicationFiled: February 28, 2013Publication date: November 28, 2013Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yosuke AKIMOTO, Yoshiaki SUGIZAKI, Hideyuki TOMIZAWA, Masanobu ANDO, Akihiro KOJIMA, Gen WATARI, Naoya USHIYAMA, Tetsuro KOMATSU, Miyoko SHIMADA, Hideto FURUYAMA
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Patent number: 8525202Abstract: According to one embodiment, an LED package includes first and second lead frames, an LED chip and a resin body. The first and second lead frames are apart from each other. The LED chip is provided above the first and second lead frames, and the LED chip has one terminal connected to the first lead frame and another terminal connected to the second lead frame. In addition, the resin body covers the first and second lead frames and the LED chip, and has an upper surface with a surface roughness of 0.15 ?m or higher and a side surface with a surface roughness higher than the surface roughness of the upper surface.Type: GrantFiled: August 3, 2010Date of Patent: September 3, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Gen Watari, Satoshi Shimizu, Mami Yamamoto, Hidenori Egoshi, Hiroaki Oshio, Tatsuo Tonedachi, Kazuhisa Iwashita, Tetsuro Komatsu, Teruo Takeuchi
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Patent number: D698744Type: GrantFiled: April 12, 2013Date of Patent: February 4, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Mitsuhiro Kobayashi, Kazuhiro Tamura, Tetsuro Komatsu