Abstract: According to one embodiment, a light emitting device includes a light emitting chip, an external terminal made of a metal material, and a circuit board. The light emitting chip is mounted on the circuit board via the external terminal. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar and a resin layer. The circuit board includes an interconnection bonded to the first metal pillar and the second metal pillar via the external terminal, and a heat radiation material provided on an opposite side of the interconnection and connected to the interconnection.

Abstract: According to one embodiment, a light emitting device includes a stacked body, a p-side and n-side electrodes, an insulating film, a p-side extraction electrode, an n-side extraction electrode, a resin layer and a phosphor layer. The stacked body has a first and a second surface opposite to each other and includes a light emitting layer. A p-side and an n-side electrode are provided on the second surface. An insulating film has openings to which the p-side and n-side electrodes are exposed. A p-side extraction electrode includes a p-side seed metal and a p-side metal wiring layer. An n-side extraction electrode includes an n-side seed metal and an n-side metal wiring layer. A resin layer is filled around the p-side and n-side extraction electrodes, and a phosphor layer is provided on a side of the first surface. Emission light from the light emitting layer is emitted through the first surface.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating film, a first interconnection, a second interconnection, a first metal pillar, a second metal pillar, a resin, and a fluorescent layer. The semiconductor layer has a first major surface, a second major surface formed on an opposite side to the first major surface, and a light emitting layer. The first electrode and the second electrode are provided on the second major surface of the semiconductor layer. The fluorescent layer faces to the first major surface of the semiconductor layer and includes a plurality of kinds of fluorescent materials having different peak wavelengths of emission light.

Abstract: According to one embodiment, an LED module includes a board, an interconnection and an LED package. The interconnection is formed on an upper surface of the board. The LED package is mounted on the board. The LED package includes first and second lead frames disposed to be apart from each other, and connected to portions of the interconnection insulated from each other. The LED package includes an LED chip provided above the first and second lead frames. The LED chip has one terminal connected to the first lead frame and another terminal connected to the second lead frame. In addition, the LED package includes a resin body covering an upper surface, portions of a lower surface and an edge surface of each of the first and second lead frames, also covering the LED chip, but exposing remaining portions of the lower surface and the edge surface. And, an appearance of the resin body is an appearance of the LED package.

Abstract: According to one embodiment, an LED package includes first and second lead frames, an LED chip and a resin body. The first and second lead frames are apart from each other. The LED chip is provided above the first and second lead frames, and the LED chip has one terminal connected to the first lead frame and another terminal connected to the second lead frame. In addition, the resin body covers the first and second lead frames and the LED chip, and has an upper surface with a surface roughness of 0.15 ?m or higher and a side surface with a surface roughness higher than the surface roughness of the upper surface.

Abstract: According to one embodiment, an LED package includes first and second lead frames, an LED chip and a resin body. The first and second lead frames are made of a metal material, and disposed to be apart from each other. The LED chip is provided above the first and second lead frames, the LED chip having one terminal connected to the first lead frame and another terminal connected to the second lead frame. The resin body is made of a resin material having a shore D hardness of 25 or higher. In addition, the resin body covers the first and second lead frames and the LED chip. And, an appearance of the resin body is an appearance of the LED package.

Abstract: According to one embodiment, an LED package includes a first and a second lead frame, an LED chip and a resin body. The first and second lead frames are apart from each other. The LED chip is provided above the first and second lead frames, and has one terminal connected to the first lead frame and another terminal connected to the second lead frame. The wire connects the one terminal to the first lead frame. The resin body covers the first and second lead frames, the LED chip, and the wire. The first lead frame includes a base portion and a plurality of extending portions. As viewed from above, a bonding position of the wire is located inside one of polygonal regions connecting between roots of the two or more of the extending portions. An appearance of the resin body is a part of an appearance of the LED package.

Abstract: According to one embodiment, an LED package includes a first lead frame, a second lead frame, an LED chip, a wire, and a resin body. The first lead frame and the second lead frame are arranged with a space between each other. The LED chip is provided above the first lead frame and the second lead frame. The LED chip has a first terminal connected to the first lead frame and a second terminal connected to the second lead frame. The wire connects the first terminal to the first lead frame. The resin body covers the LED chip as well as a top surface, a part of a bottom surface, and a part of an edge surface of each of the first lead frame and the second lead frame. A remaining portion of each of the bottom surfaces and a remaining portion of each of the edge surfaces are exposed.

Abstract: A method for manufacturing a light emitting device includes: measuring at least one of each wavelength of the emitted light of the light emitting element, each optical output of the emitted light of the light emitting element, and each chromaticity of the mixed light emitted through the mixed resin in a manufacturing process of the light emitting device; and adjusting chromaticity for each light emitting device by performing a prescribed chromaticity adjustment with regard to the mixed resin, on basis of a result obtained in the measuring, so that the chromaticity of the mixed light falls within a preset prescribed range.

Abstract: A method for manufacturing a light emitting device includes: forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate; forming a dielectric film on a second surface side opposite to the first surface of the multilayer body, the dielectric film having a first and second openings on a p-side electrode and an n-side electrode provided on the second surface; forming a seed metal on the dielectric film and an exposed surface of the first and second openings; forming a p-side metal interconnect layer and an n-side metal interconnect layer on the seed metal; separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal, which is provided between the p-side metal interconnect layer and the n-side metal interconnect layer; and forming a resin in a space from which the seed metal is removed.

Abstract: A light emitting device includes: a substrate including through electrodes; a light emitting element bonded onto the substrate and connected to the through electrodes; and a dielectric film made of a translucent inorganic material and spaced from the light emitting element so that an internal space is formed between the dielectric film and the substrate, emission light from the light emitting element being allowed to be emitted through the dielectric film, and a manufacturing the same are provided.

Abstract: A method for manufacturing an LED device, includes: mounting an LED chip, which emits a first light, on a bottom surface of a recess formed in an upper surface of a package, pouring a resin liquid containing phosphor particles, which emits a second light upon incidence of the first light, into the recess, fixing the package to a package fixing plate of an apparatus of the LED device, precipitating the phosphor particles in the resin liquid with a centrifugal force applying to the package in a direction from the upper surface to the lower surface of the package by rotating a rotary member with a rotary driving unit, and curing the resin liquid.

Abstract: A lens-equipped light-emitting diode device of the present invention includes a lead frame in which an electrode is formed, a light-emitting diode which is mounted on the electrode of the lead frame, an outer peripheral unit which is made of a first resin, which is provided on the lead frame, and in which a hollow portion is formed while an area including at least the light-emitting diode is exposed in the outer peripheral unit, a sealing portion which is made of a second resin filled in the lead frame of the hollow portion of the outer peripheral unit, and which seals the light-emitting diode, and a lens unit made of a third resin laminated and filled in the sealing portion.

Abstract: A lens-equipped light-emitting diode device of the present invention includes a lead frame in which an electrode is formed, a light-emitting diode which is mounted on the electrode of the lead frame, an outer peripheral unit which is made of a first resin, which is provided on the lead frame, and in which a hollow portion is formed while an area including at least the light-emitting diode is exposed in the outer peripheral unit, a sealing portion which is made of a second resin filled in the lead frame of the hollow portion of the outer peripheral unit, and which seals the light-emitting diode, and a lens unit made of a third resin laminated and filled in the sealing portion.

Abstract: An LED chip of the present invention includes a columnar GaP substrate in which a tapered portion whose outer shape is narrowed toward an upper bottom surface side is formed in an outer wall surface thereof, an upper-surface electrode provided in an upper bottom surface of the GaP substrate, a light-emitting layer provided in a lower bottom surface of the GaP substrate, and a lower-surface electrode provided in a surface opposite to the GaP substrate with respect to the light-emitting layer, the lower-surface electrode being arranged in an annular region outside the region opposite to the upper-surface electrode.

Abstract: Various semiconductor light emitting devices are described. In one aspect, the semiconductor light emitting device may include, an insulating substrate having an electrode pattern; a metal body provided on the insulating substrate, the metal body having a through-hole; an adhesive layer provided between the insulating substrate and the metal body; a semiconductor light emitting element provided in the through-hole of the metal body, provided on the insulating substrate and electrically connected to the electrode pattern; and a resin configured to seal the semiconductor light emitting, wherein an inner surface of the through-hole faces the semiconductor light emitting element. The inner surface may have a slanted surface and at least a part of the light emitted from the semiconductor light emitting element reflected by the inner surface.

Abstract: In a stacked-type semiconductor unit having a plurality of semiconductor devices stacked on a base board including a base electrode, each semiconductor device has a wiring board including an external electrode provided in an end portion thereof. The semiconductor devices are stacked on the base board such that the external electrodes are aligned with one another. Then, the external electrodes are electrically connected to the base board by solder.

Abstract: In a stacked-type semiconductor unit having a plurality of semiconductor devices stacked on a base board including a base electrode, each semiconductor device has a wiring board including an external electrode provided in an end portion thereof. The semiconductor devices are stacked on the base board such that the external electrodes are aligned with one another. Then, the external electrodes are electrically connected to the base board by solder.