Patents by Inventor Tetsuro Okada
Tetsuro Okada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230339764Abstract: The present invention is related to a polycrystalline silicon rod manufactured with a Siemens method. The polycrystalline silicon rod having a length of 1 m or more in a longitudinal direction. An absolute value of a difference between compressive stress and tensile stress in residual stress in the longitudinal direction on a circumferential surface of the polycrystalline silicon rod is 22 MPa or less.Type: ApplicationFiled: April 20, 2023Publication date: October 26, 2023Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Tetsuro OKADA, Naruhiro HOSHINO, Masahiko ISHIDA
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Patent number: 11673809Abstract: An apparatus for manufacturing polysilicon rod by a Siemens method has a base plate 20; and a holding body 100 provided on the base plate 20 so as to be movable in a horizontal direction and electrically connect between a core wire holder 1 and an electrode 4. The holding body 100 is configured to rotatably hold the core wire holder 1 with respect to the base plate 20.Type: GrantFiled: June 11, 2021Date of Patent: June 13, 2023Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tetsuro Okada, Naruhiro Hoshino, Masahiko Ishida
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Patent number: 11639293Abstract: An apparatus for manufacturing polysilicon rod by a Siemens method has a base plate 20; and a holding body 100 provided on the base plate 20 so as to be movable in a horizontal direction and electrically connect between a core wire holder 1 and an electrode 4. The holding body 100 is configured to rotatably hold the core wire holder 1 with respect to the base plate 20.Type: GrantFiled: June 11, 2021Date of Patent: May 2, 2023Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tetsuro Okada, Naruhiro Hoshino, Masahiko Ishida
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Patent number: 11565939Abstract: In the silicon core wire according to a first aspect of the present invention, a male thread part formed at one end of a first thin silicon rod and a female thread part formed at one end of a second thin silicon rod may be screwed together and fastened. In the silicon core wire according to a second aspect of the present invention, a thread part formed at one end of a first thin silicon rod and a thread part formed at one end of a second thin silicon rod may be screwed together and fastened via an adapter with thread parts formed at both ends.Type: GrantFiled: April 8, 2020Date of Patent: January 31, 2023Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Naruhiro Hoshino, Tetsuro Okada, Masahiko Ishida
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Publication number: 20230002238Abstract: An apparatus for manufacturing a polysilicon rod comprising: a core wire 1 on which polysilicon is deposited; a core wire electrode 60 provided to penetrate a bottom plate 80; an adjustment member 10 provided between the silicon core wire 1 and the core wire electrode 60, and movable with respect to the bottom plate 80; and a cooling part capable of cooling the adjustment member 10.Type: ApplicationFiled: June 28, 2022Publication date: January 5, 2023Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Naruhiro HOSHINO, Tetsuro OKADA, Masahiko ISHIDA
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Patent number: 11519069Abstract: A polycrystalline silicon manufacturing apparatus according to the present invention may comprise an electrode adapter that electrically connects a core wire holder and a metal electrode, wherein the electrode adapter may be non-conductive with respect to a screwing part formed in the metal electrode. A polycrystalline silicon manufacturing apparatus according to the present invention may comprise an electrode adapter that electrically connects a core wire holder and a metal electrode, wherein the electrode adapter may be fixed to the metal electrode by a fixing mechanism part, and the electrode adapter may be non-conductive with respect to the fixing mechanism part.Type: GrantFiled: July 22, 2020Date of Patent: December 6, 2022Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tetsuro Okada, Naruhiro Hoshino, Masahiko Ishida
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Patent number: 11505862Abstract: A method for preventing contamination of a base plate having a step of, after producing polycrystalline silicon in a reactor having the base plate and a lid covering the base plate, removing the lid from the base plate; and a step of isolating space including the base plate by an isolation device.Type: GrantFiled: March 1, 2021Date of Patent: November 22, 2022Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tetsuro Okada, Naruhiro Hoshino, Masahiko Ishida
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Patent number: 11345603Abstract: In a step of performing cylindrical grinding of a polycrystalline silicon bar 10 grown by a Siemens method, this cylindrical grinding step is performed such that a polycrystalline silicon rod 30, whose center axis CR is shifted from a center axis C0 of a silicon core wire 20 by 2 mm or more, is manufactured.Type: GrantFiled: December 17, 2019Date of Patent: May 31, 2022Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Naruhiro Hoshino, Tetsuro Okada, Masahiko Ishida
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Patent number: 11326257Abstract: An integrated sleeve structure is provided between an electrode configured to feed power to a silicon core wire and a bottom plate part. Sealing members are arranged on at least part of a flange part of an insulating member and on at least part of a straight part of the insulating member.Type: GrantFiled: February 19, 2020Date of Patent: May 10, 2022Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Naruhiro Hoshino, Tetsuro Okada, Masahiko Ishida
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Patent number: 11242620Abstract: To provide polycrystalline silicon suitable as a raw material for production of single-crystalline silicon. A D/L value is set within the range of less than 0.40 when multiple pairs of silicon cores are placed in a reaction furnace in production of a polycrystalline silicon rod having a diameter of 150 mm or more by deposition according to a chemical vapor deposition process and it is assumed that the average value of the final diameter of the polycrystalline silicon rod is defined as D (mm) and the mutual interval between the multiple pairs of silicon cores is defined as L (mm).Type: GrantFiled: July 3, 2018Date of Patent: February 8, 2022Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Shuichi Miyao, Naruhiro Hoshino, Tetsuro Okada, Shigeyoshi Netsu, Masahiko Ishida
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Publication number: 20220033267Abstract: Provided is a polycrystalline silicon rod suitable as a raw material for production of single-crystalline silicon. A crystal piece (evaluation sample) is collected from a polycrystalline silicon rod grown by a Siemens method, and a polycrystalline silicon rod in which an area ratio of a crystal grain having a particle size of 100 nm or less is 3% or more is sorted out as the raw material for production of single-crystalline silicon. When single-crystalline silicon is grown by an FZ method using the polycrystalline silicon rod as a raw material, the occurrence of dislocation is remarkably suppressed.Type: ApplicationFiled: October 15, 2021Publication date: February 3, 2022Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Naruhiro Hoshino, Shigeyoshi Netsu, Tetsuro Okada, Masahiko Ishida
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Publication number: 20220002164Abstract: An apparatus for manufacturing polysilicon rod by a Siemens method has a base plate 20; and a holding body 100 provided on the base plate 20 so as to be movable in a horizontal direction and electrically connect between a core wire holder 1 and an electrode 4. The holding body 100 is configured to rotatably hold the core wire holder 1 with respect to the base plate 20.Type: ApplicationFiled: June 11, 2021Publication date: January 6, 2022Applicant: Shin-Etsu Chemical Co.. Ltd.Inventors: Tetsuro OKADA, Naruhiro HOSHiNO, Masahiko ISHIDA
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Publication number: 20210285099Abstract: A method for preventing contamination of a base plate having a step of, after producing polycrystalline silicon in a reactor having the base plate and a lid covering the base plate, removing the lid from the base plate; and a step of isolating space including the base plate by an isolation device.Type: ApplicationFiled: March 1, 2021Publication date: September 16, 2021Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Tetsuro OKADA, Naruhiro Hoshino, Masahiko Ishida
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Patent number: 10870581Abstract: A reaction furnace for producing a polycrystalline silicon according to the present invention is designed so as to have an in-furnace reaction space in which a reaction space cross-sectional area ratio (S=[S0?SR]/SR) satisfies 2.5 or more, which is defined by an inner cross-sectional area (So) of a reaction furnace, which is perpendicular to a straight body portion of the reaction furnace, and a total sum (SR) of cross-sectional areas of polycrystalline silicon rods that are grown by precipitation of polycrystalline silicon, in a case where a diameter of the polycrystalline silicon rod is 140 mm or more. Such a reaction furnace has a sufficient in-furnace reaction space even when the diameter of the polycrystalline silicon rod has been expanded, and accordingly an appropriate circulation of a gas in the reaction furnace is kept.Type: GrantFiled: April 10, 2020Date of Patent: December 22, 2020Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Shigeyoshi Netsu, Naruhiro Hoshino, Tetsuro Okada, Hiroshi Saito
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Publication number: 20200392627Abstract: There is provided a method of manufacturing a polycrystalline silicon rod suitable as a raw material for manufacturing monocrystalline silicon by a FZ process. The method of manufacturing a polycrystalline silicon rod according to the present invention is a method of manufacturing a polycrystalline silicon rod by Siemens process, and includes a post-deposition energization step of, after an end of a deposition step of polycrystalline silicon, performing energization under a condition that provides a skin depth D shallower than a skin depth D0 provided at a time when the deposition step ends. For example, the post-deposition energization step is performed by passage of current at a frequency f higher than a frequency f0 of current that is passed at a time when the deposition step ends.Type: ApplicationFiled: June 11, 2020Publication date: December 17, 2020Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Naruhiro HOSHINO, Masahiko Ishida, Tetsuro Okada
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Patent number: 10865498Abstract: In the present invention, once a polycrystalline silicon rod is grown by the Siemens process, the polycrystalline silicon rod is heat-treated within a temperature range from 750° C. to 900° C. to relieve residual stress in the crystal. According to the experiment of the present inventors, residual stress can be relieved satisfactorily by heat treatment at the above-described low temperature, and in addition, metal contamination cannot be induced and the physical properties of the polycrystalline silicon rod cannot be changed. The above heat treatment can be conducted inside a furnace used to grow the polycrystalline silicon rod, and can also be conducted outside a furnace used to grow the polycrystalline silicon rod. According to the present invention, a polycrystalline silicon rod with residual stress (?) of not more than +20 MPa evaluated by a 2?-sin2? diagram can be obtained.Type: GrantFiled: October 11, 2018Date of Patent: December 15, 2020Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Shuichi Miyao, Shigeyoshi Netsu, Tetsuro Okada
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Patent number: 10858258Abstract: A reaction furnace for producing a polycrystalline silicon according to the present invention is designed so as to have an in-furnace reaction space in which a reaction space cross-sectional area ratio (S=[S0?SR]/SR) satisfies 2.5 or more, which is defined by an inner cross-sectional area (So) of a reaction furnace, which is perpendicular to a straight body portion of the reaction furnace, and a total sum (SR) of cross-sectional areas of polycrystalline silicon rods that are grown by precipitation of polycrystalline silicon, in a case where a diameter of the polycrystalline silicon rod is 140 mm or more. Such a reaction furnace has a sufficient in-furnace reaction space even when the diameter of the polycrystalline silicon rod has been expanded, and accordingly an appropriate circulation of a gas in the reaction furnace is kept.Type: GrantFiled: July 29, 2015Date of Patent: December 8, 2020Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Shigeyoshi Netsu, Naruhiro Hoshino, Tetsuro Okada, Hiroshi Saito
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Publication number: 20200331764Abstract: In the silicon core wire according to a first aspect of the present invention, a male thread part formed at one end of a first thin silicon rod and a female thread part formed at one end of a second thin silicon rod may be screwed together and fastened. In the silicon core wire according to a second aspect of the present invention, a thread part formed at one end of a first thin silicon rod and a thread part formed at one end of a second thin silicon rod may be screwed together and fastened via an adapter with thread parts formed at both ends.Type: ApplicationFiled: April 8, 2020Publication date: October 22, 2020Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Naruhiro HOSHINO, Tetsuro OKADA, Masahiko ISHIDA
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Patent number: 10760180Abstract: A polycrystalline silicon ingot having a value of Te?Ts, ?T, of 50° C. or less, wherein Ts and Te are the onset temperature and the completion temperature of melting, respectively, when the temperature is increased at a rate of 60° C./minute or less in the temperature range of 1400° C. or more is used as the production raw material for single crystal silicon. The present invention provides a polycrystalline silicon ingot or polycrystalline silicon rod suitable for stably producing single crystal silicon.Type: GrantFiled: October 17, 2017Date of Patent: September 1, 2020Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Shuichi Miyao, Shigeyoshi Netsu, Naruhiro Hoshino, Tetsuro Okada
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Publication number: 20200263304Abstract: An integrated sleeve structure is provided between an electrode configured to feed power to a silicon core wire and a bottom plate part. Sealing members are arranged on at least part of a flange part of an insulating member and on at least part of a straight part of the insulating member.Type: ApplicationFiled: February 19, 2020Publication date: August 20, 2020Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Naruhiro Hoshino, Tetsuro Okada, Masahiko Ishida