Abstract: An apparatus for producing polycrystalline silicon by the Siemens method, includes: a carbon-made core wire holder 14 holding a silicon core wire 13; an electrode portion 10 energizing the core wire holder 14, the electrode portion 10 having a top end 18 in contact with a bottom end of the core wire holder 14; and a first screwing section provided 17a only around a lower part of the core wire holder 14 to be fixed to the electrode portion 10, wherein the core wire holder 14 has a contact surface with the top end 18 of the electrode portion 10, the contact surface being lower in electric resistance than an area of the first screwing section 17a to be fastened.

Abstract: A reaction furnace for producing a polycrystalline silicon according to the present invention is designed so as to have an in-furnace reaction space in which a reaction space cross-sectional area ratio (S=[SO?SR]/SR) satisfies 2.5 or more, which is defined by an inner cross-sectional area (So) of a reaction furnace, which is perpendicular to a straight body portion of the reaction furnace, and a total sum (SR) of cross-sectional areas of polycrystalline silicon rods that are grown by precipitation of polycrystalline silicon, in a case where a diameter of the polycrystalline silicon rod is 140 mm or more. Such a reaction furnace has a sufficient in-furnace reaction space even when the diameter of the polycrystalline silicon rod has been expanded, and accordingly an appropriate circulation of a gas in the reaction furnace is kept.

Abstract: In a step of performing cylindrical grinding of a polycrystalline silicon bar 10 grown by a Siemens method, this cylindrical grinding step is performed such that a polycrystalline silicon rod 30, whose center axis CR is shifted from a center axis C0 of a silicon core wire 20 by 2 mm or more, is manufactured.

Abstract: A connector for temporary scaffolding at an end of a lateral member, to be wedge-connected to a receiver around a strut, includes: a wedge body provided movably at the end of the lateral member upward and downward relative to the lateral member; a locking body including a claw formed such that, as a result of the wedge-body's moving downward, the claw could travel from initial to locking position with respect to the receiver; and a biasing body capable of pressing the locking body toward the wedge body, wherein the wedge body includes a shoulder protruding toward the locking body, the locking body includes an interfering portion protruding toward the wedge body, and when the claw is at the initial position, the shoulder is blocked by the interfering portion from moving upward, thereby preventing the wedge body from moving upward and the locking body from traveling toward the biasing body.

Abstract: Provided is a polycrystalline silicon rod suitable as a raw material for production of single-crystalline silicon. A crystal piece (evaluation sample) is collected from a polycrystalline silicon rod grown by a Siemens method, and a polycrystalline silicon rod in which an area ratio of a crystal grain having a particle size of 100 nm or less is 3% or more is sorted out as the raw material for production of single-crystalline silicon. When single-crystalline silicon is grown by an FZ method using the polycrystalline silicon rod as a raw material, the occurrence of dislocation is remarkably suppressed.

Abstract: A connector for temporary scaffolding at an end of a lateral member, to be wedge-connected to a receiver around a strut, includes: a wedge body provided movably at the end of the lateral member upward and downward relative to the lateral member; a locking body including a claw formed such that, as a result of the wedge-body's moving downward, the claw could travel from initial to locking position with respect to the receiver; and a biasing body capable of pressing the locking body toward the wedge body, wherein the wedge body includes a shoulder protruding toward the locking body, the locking body includes an interfering portion protruding toward the wedge body, and when the claw is at the initial position, the shoulder is blocked by the interfering portion from moving upward, thereby preventing the wedge body from moving upward and the locking body from traveling toward the biasing body.

Abstract: In the present invention, once a polycrystalline silicon rod is grown by the Siemens process, the polycrystalline silicon rod is heat-treated within a temperature range from 750° C. to 900° C. to relieve residual stress in the crystal. According to the experiment of the present inventors, residual stress can be relieved satisfactorily by heat treatment at the above-described low temperature, and in addition, metal contamination cannot be induced and the physical properties of the polycrystalline silicon rod cannot be changed. The above heat treatment can be conducted inside a furnace used to grow the polycrystalline silicon rod, and can also be conducted outside a furnace used to grow the polycrystalline silicon rod. According to the present invention, a polycrystalline silicon rod with residual stress (?) of not more than +20 MPa evaluated by a 2?-sin2? diagram can be obtained.

Abstract: To provide polycrystalline silicon suitable as a raw material for production of single-crystalline silicon. A D/L value is set within the range of less than 0.40 when multiple pairs of silicon cores are placed in a reaction furnace in production of a polycrystalline silicon rod having a diameter of 150 mm or more by deposition according to a chemical vapor deposition process and it is assumed that the average value of the final diameter of the polycrystalline silicon rod is defined as D (mm) and the mutual interval between the multiple pairs of silicon cores is defined as L (mm).

Abstract: A polycrystalline silicon ingot having a value of Te?Ts, ?T, of 50° C. or less, wherein Ts and Te are the onset temperature and the completion temperature of melting, respectively, when the temperature is increased at a rate of 60° C./minute or less in the temperature range of 1400° C. or more is used as the production raw material for single crystal silicon. The present invention provides a polycrystalline silicon ingot or polycrystalline silicon rod suitable for stably producing single crystal silicon.

Abstract: A reaction furnace for producing a polycrystalline silicon according to the present invention is designed so as to have an in-furnace reaction space in which a reaction space cross-sectional area ratio (S=[S0?SR]/SR) satisfies 2.5 or more, which is defined by an inner cross-sectional area (So) of a reaction furnace, which is perpendicular to a straight body portion of the reaction furnace, and a total sum (SR) of cross-sectional areas of polycrystalline silicon rods that are grown by precipitation of polycrystalline silicon, in a case where a diameter of the polycrystalline silicon rod is 140 mm or more. Such a reaction furnace has a sufficient in-furnace reaction space even when the diameter of the polycrystalline silicon rod has been expanded, and accordingly an appropriate circulation of a gas in the reaction furnace is kept.

Abstract: A core wire holder 34 (holding member) has a taper of a positive taper angle on the lower end part thereof. On the other hand, in an adaptor 33 (supporting member) to be used for connection of a metal electrode 30 with the core wire holder 34 (holding member) for energization of a silicon core wire 100, the inner surface of a hole of the adaptor 33 into which the lower end part of the core wire holder 34 (holding member) is inserted, when the opening side of the hole is set upward and the insertion direction of the lower end part of the holding member is set downward, has a taper of a positive taper angle. The lower end part of the core wire holder 34 (holding member) is inserted in the hole of the adaptor 33 (supporting member) and the silicon core wire 100 is thus fixed.

Abstract: In the present invention, once a polycrystalline silicon rod is grown by the Siemens process, the polycrystalline silicon rod is heat-treated within a temperature range from 750° C. to 900° C. to relieve residual stress in the crystal. According to the experiment of the present inventors, residual stress can be relieved satisfactorily by heat treatment at the above-described low temperature, and in addition, metal contamination cannot be induced and the physical properties of the polycrystalline silicon rod cannot be changed. The above heat treatment can be conducted inside a furnace used to grow the polycrystalline silicon rod, and can also be conducted outside a furnace used to grow the polycrystalline silicon rod. According to the present invention, a polycrystalline silicon rod with residual stress (?) of not more than +20 MPa evaluated by a 2?-sin2 ? diagram can be obtained.

Abstract: The present invention provides a method of producing polycrystalline silicon in which silicon is precipitated on a silicon core wire to obtain a polycrystalline silicon rod. In an initial stage (former step) of a precipitation reaction, a reaction rate is not increased by supplying a large amount of source gas to a reactor but the reaction rate is increased by increasing a concentration of the source gas to be supplied, and in a latter step after the former step, the probability of occurrence of popcorn is reduced using an effect of high-speed forced convection caused by blowing the source gas into the reactor at high speed. Thus, a high-purity polycrystalline silicon rod with little popcorn can be produced without reducing production efficiency even in a reaction system with high pressure, high load, and high speed.

Abstract: The present invention provides a method of producing polycrystalline silicon in which silicon is precipitated on a silicon core wire to obtain a polycrystalline silicon rod. In an initial stage (former step) of a precipitation reaction, a reaction rate is not increased by supplying a large amount of source gas to a reactor but the reaction rate is increased by increasing a concentration of the source gas to be supplied, and in a latter step after the former step, the probability of occurrence of popcorn is reduced using an effect of high-speed forced convection caused by blowing the source gas into the reactor at high speed. Thus, a high-purity polycrystalline silicon rod with little popcorn can be produced without reducing production efficiency even in a reaction system with high pressure, high load, and high speed.

Abstract: Synchronization of a wireless downlink in an existing mobile communication network is established and system notifying information from the existing mobile communication network is received. Synchronization of a wireless uplink in the existing mobile communication network is established and a layer-3 wireless channel establishment requesting message is received. A communication restricting state (ON/OFF state) for each service type (circuit switching service or packet switching service) is confirmed and the communication restricting state (ON/OFF state) is confirmed on the basis of a speed threshold value, based on a result of which confirmation, communication restriction is performed.