Abstract: A member contains a fluorine-containing polymer and a fluorine-containing surfactant, in which provided that a mass-based content of the fluorine-containing surfactant in at least a surface of a portion of the member is M1, and a mass-based content of the surfactant in a position 10 nm below the surface in a thickness direction of the member is M2, M1/M2 is 0.50 to 0.90, and an atom number ratio X1 of the number of fluorine atoms contained in the surface to the number of carbon atoms contained in the surface is 0.50 to 3.0.

Abstract: A coloring composition includes colorants and a resin, in which a ratio A/B of a minimum value A of an absorbance in a wavelength range of 400 to 830 nm to a maximum value B of an absorbance in a wavelength range of 1000 to 1300 nm is 4.5 or higher.

Abstract: An object of the present invention is to provide a chemical liquid purification method by which a chemical liquid capable of inhibiting the occurrence of short in a semiconductor substrate manufactured by a photolithography process is obtained. Another object of the present invention is to provide a chemical liquid manufacturing method and a chemical liquid. The chemical liquid purification method of the present invention includes a purification step of filtering a liquid to be purified by using a filter, in which a filter satisfying a condition 1 or a condition 2 in the following test is used as the filter. Test: 1,500 ml of a test liquid formed of the organic solvent is brought into contact with the filter for 24 hours under a condition of 23° C., and a content of particles containing at least one kind of metal selected from the group consisting of Fe, Al, Cr, Ni, and Ti in the test liquid after the contact satisfies a predetermined condition.

Abstract: An object of the present invention is to provide a chemical liquid which makes it difficult for a defect to occur on a substrate after development. Another object of the present invention is to provide a chemical liquid storage body and a pattern forming method. The chemical liquid of the according to an embodiment of the present invention contains a main agent which is formed of one kind of organic solvent or formed of a mixture of two or more kinds of organic solvents, an impurity metal, and a surfactant, in which a vapor pressure of the main agent is 60 to 1,340 Pa at 25° C., the impurity metal contains particles containing one kind of metal selected from the group consisting of Fe, Cr, Ni, and Pb, in a case where the chemical liquid contains one kind of particles, a content of the particles in the chemical liquid is 0.

Abstract: An object of the present invention is to provide a chemical liquid manufacturing method which makes it possible to manufacture a chemical liquid having an excellent defect inhibition performance. The chemical liquid manufacturing method of an embodiment of the present invention is a method for manufacturing a chemical liquid containing an organic solvent by using a manufacturing device. The chemical liquid manufacturing method has a setup step including a step A of washing the manufacturing device by using a washing solution and a step B of extracting the washing solution from the manufacturing device and a preparation step of preparing the chemical liquid in the manufacturing device, in which in the setup step, the step A and the step B are repeatedly performed until the washing solution extracted from the manufacturing device satisfies the following condition 1 after the step A and the step B.

Abstract: An object of the present invention is to provide a quality inspection method for a chemical liquid that makes it possible to simply evaluate defect performance. The quality inspection method according to an embodiment of the present invention is a quality inspection method for a chemical liquid used for manufacturing a semiconductor substrate, including a step W of preparing a first container and washing at least a portion of a liquid contact portion by using a portion of the chemical liquid, a step A of performing concentration of a portion of the chemical liquid by using the washed first container so as to obtain c liquid, a step B of performing measurement of a content of a specific component in c liquid, and a step C of comparing the content of the specific component with a preset standard value.

Abstract: There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one specific metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method including: bringing an etching solution which contains a non-halogen acidic compound into contact with the second layer and selectively removing the second layer.

Abstract: A coloring composition includes colorants, polymerizable compounds, and a resin, in which a ratio P/M of a mass P of the colorants to a mass M of the polymerizable compounds is 0.05 to 0.35, a content of the polymerizable compounds is 25 to 65 mass % with respect to a total solid content of the coloring composition, a ratio A/B of a minimum value A of an absorbance in a wavelength range of 400 nm or longer and shorter than 580 nm to a minimum value B of an absorbance in a wavelength range of 580 nm to 770 nm is 0.3 to 3, and a ratio C/D of a minimum value C of an absorbance in a wavelength range of 400 nm to 750 nm to a maximum value D of an absorbance in a wavelength range of 850 nm to 1300 nm is 5 or higher.

Abstract: An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can accomplish suppression of generation of defects on a pattern and reduction in bridge defects of the pattern at the same time. The pattern forming method of an embodiment of the present invention is a pattern forming method by forming a resist film on a substrate using a resist composition including at least a resin whose polarity increases by the action of an acid, a photoacid generator, and a solvent, exposing the resist film, and then treating the exposed resist film with a treatment liquid to form a pattern, in which the treatment liquid includes two or more organic solvents, a boiling point of at least one organic solvent of the two or more organic solvents is 120° C. to 155° C., a content of the organic solvent having a boiling point of 120° C. to 155° C.

Abstract: An object of the present invention is to provide a chemical liquid which makes it possible to form a thinner resist film having a uniform thickness on a substrate by using a small amount of resist composition and demonstrates excellent defect inhibition performance. Another object of the present invention is to provide a pattern forming method.

Abstract: An object of the present invention is to provide a chemical liquid which makes it possible to form a thinner resist film having a uniform thickness on a substrate by using a small amount of resist composition and demonstrates excellent defect inhibition performance. Another object of the present invention is to provide a pattern forming method. A chemical liquid of the present invention contains a mixture of two or more kinds of organic solvents and an impurity metal containing one kind of element selected from the group consisting of Fe, Cr, Ni, and Pb, in which a vapor pressure of the mixture is 50 to 1,420 Pa at 25° C., in a case where the chemical liquid contains one kind of the impurity metal, a content of the impurity metal in the chemical liquid is 0.001 to 100 mass ppt, and in a case where the chemical liquid contains two or more kinds of the impurity metals, a content of each of the impurity metals in the chemical liquid is 0.001 to 100 mass ppt.

Abstract: The present invention provides a manufacturing method of a semiconductor chip, in which the manufacturing yield is excellent, and a kit. According to the present invention, a manufacturing method of a semiconductor chip includes Process 1 of forming an insulating layer on a base material, Process 2 of forming a patterned resist film on the insulating layer, Process 3 of forming the insulating layer having an opening portion by etching the insulating layer with the patterned resist film as a mask, Process 4 of removing the patterned resist film, Process 5 of filling the opening portion of the insulating layer with metal, and Process 6 of performing chemical-mechanical polishing on the insulating layer filled with metal.

Abstract: An object of the present invention is to provide a pattern forming method which is excellent in developability and defect suppression performance. Another object of the present invention is to provide a method for producing an electronic device including the pattern forming method. Still another object of the present invention is to provide a kit capable of forming a pattern which is excellent in developability and defect suppression performance.

Abstract: An object of the present invention is to provide a chemical liquid having excellent developability and excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid storage body, a chemical liquid filling method, and a chemical liquid storage method. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent, a metal impurity, and an organic impurity, in which the metal impurity contains metal atoms, a total content of the metal atoms in the chemical liquid with respect to a total mass of the chemical liquid is equal to or smaller than 50 mass ppt, a total content of the organic impurity in the chemical liquid with respect to the total mass of the chemical liquid is 0.1 to 10,000 mass ppm, the organic impurity contains an alcohol impurity, and a mass ratio of a content of the alcohol impurity to the total content of the organic impurity is 0.0001 to 0.5.

Abstract: An object of the present invention is to provide a chemical liquid which has excellent defect inhibition performance and hardly breaks a transfer pipe line that a device for manufacturing the chemical liquid includes at the time of manufacturing the chemical liquid. Another object of the present invention is to provide a chemical liquid storage body, a manufacturing method of a chemical liquid, and a manufacturing method of a chemical liquid storage body. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent and an ion of at least one kind of atom selected from the group consisting of an Fe atom, a Cr atom, a Ni atom, and a Pb atom, in which in a case where the chemical liquid contains one kind of the ion, a content of the metal ion is 0.1 to 100 mass ppt, in a case where the chemical liquid contains two or more kinds of the ions, a content of each of the metal ions is 0.

Abstract: A treatment liquid is a treatment liquid for a semiconductor device, which contains a fluorine-containing compound and a water-soluble aromatic compound not having a heterocyclic group but having a benzene ring, and has a pH of 5 or less.

Abstract: An object of the present invention is to provide a solution which contains an organic solvent as a main component (content: equal to or greater than 98% by mass) and has an excellent defect inhibition ability. Another object of the present invention is to provide a solution storage body storing the solution, an actinic ray-sensitive or radiation-sensitive resin composition containing the solution, and a pattern forming method and a manufacturing method of a semiconductor device using the solution. The solution of the present invention is a solution containing at least one kind of organic solvent having a boiling point lower than 200° C. and an organic impurity having a boiling point equal to or higher than 250° C., in which a content of the organic solvent with respect to a total mass of the solution is equal to or greater than 98% by mass, and a content of the organic impurity with respect to the total mass of the solution is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.

Abstract: An object of the present invention is to provide a treatment liquid for a semiconductor device, which has excellent temporal stability of residue removing performance, and excellent anticorrosion performance for a treatment target. In addition, another object of the present invention is to provide a method for washing a substrate and a method for manufacturing a semiconductor device, each using the treatment liquid. The treatment liquid of an embodiment of the present invention is a treatment liquid for a semiconductor device, including at least one hydroxylamine compound selected from the group consisting of hydroxylamine and a hydroxylamine salt, at least one basic compound selected from the group consisting of an amine compound other than the hydroxylamine compound and a quaternary ammonium hydroxide salt, and at least one selected from the group consisting of a reducing agent other than the hydroxylamine compound and a chelating agent, and having a pH of 10 or more.

Abstract: A treatment liquid is a treatment liquid for a semiconductor device, and contains a fluorine-containing compound and a metal ion.

Abstract: An object of the present invention is to provide a solution which is excellent in both the temporal stability of an organic solvent and the defect inhibition properties. Another object of the present invention is to provide a solution storage body storing the solution, an actinic ray-sensitive or radiation-sensitive resin composition containing the solution, and a pattern forming method and a manufacturing method of a semiconductor device using the solution. The solution of the present invention is a solution containing an organic solvent and a stabilizer, in which a content of the stabilizer with respect to a total mass of the solution is 0.1 to 50 mass ppm.