Patents by Inventor Tetsuya Kamimura

Tetsuya Kamimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220325208
    Abstract: The present invention provides: a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in temporal stability and cleaning performance; and a method of cleaning such semiconductor substrates. A cleaning liquid of the invention contains: a first amine compound which is represented by Formula (1) and whose conjugated acid has a first acidity constant of not less than 8.5; and a second amine compound (provided that the first amine compound is excluded). The mass ratio of the first amine compound content to the second amine compound content is 1 to 100, and the cleaning liquid has pH of 6.0-12.0 at 25° C.
    Type: Application
    Filed: June 24, 2022
    Publication date: October 13, 2022
    Applicant: FUJIFILM Corporation
    Inventor: Tetsuya KAMIMURA
  • Patent number: 11465073
    Abstract: An object of the present invention is to provide a chemical liquid purification method by which a chemical liquid capable of inhibiting the occurrence of short in a semiconductor substrate manufactured by a photolithography process is obtained. Another object of the present invention is to provide a chemical liquid manufacturing method and a chemical liquid. The chemical liquid purification method of the present invention includes a purification step of filtering a liquid to be purified by using a filter, in which a filter satisfying a condition 1 or a condition 2 in the following test is used as the filter. Test: 1,500 ml of a test liquid formed of the organic solvent is brought into contact with the filter for 24 hours under a condition of 23° C., and a content of particles containing at least one kind of metal selected from the group consisting of Fe, Al, Cr, Ni, and Ti in the test liquid after the contact satisfies a predetermined condition.
    Type: Grant
    Filed: September 27, 2019
    Date of Patent: October 11, 2022
    Assignee: FUJIFILM Corporation
    Inventor: Tetsuya Kamimura
  • Publication number: 20220315868
    Abstract: An object of the invention is to provide a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in cleaning performance and corrosion prevention performance with respect to copper-containing and cobalt-containing metal films. Another object of the invention is to provide a method of cleaning semiconductor substrates having undergone CMP. A cleaning liquid of the invention is for semiconductor substrates having undergone CMP and includes: a component A that is an amino acid having one carboxyl group; a component B that is at least one selected from the group consisting of an aminopolycarboxylic acid and a polyphosphonic acid; and a component C that is an aliphatic amine (provided that the component A, the aminopolycarboxilic acid and a quaternary ammonium compound are excluded). The mass ratio of the component B content to the component A content is 0.
    Type: Application
    Filed: June 14, 2022
    Publication date: October 6, 2022
    Applicant: FUJIFILM Corporation
    Inventor: Tetsuya KAMIMURA
  • Patent number: 11453734
    Abstract: An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can accomplish suppression of generation of defects on a pattern and reduction in bridge defects of the pattern at the same time. The pattern forming method of an embodiment of the present invention is a pattern forming method by forming a resist film on a substrate using a resist composition including at least a resin whose polarity increases by the action of an acid, a photoacid generator, and a solvent, exposing the resist film, and then treating the exposed resist film with a treatment liquid to form a pattern, in which the treatment liquid includes two or more organic solvents, a boiling point of at least one organic solvent of the two or more organic solvents is 120° C. to 155° C., a content of the organic solvent having a boiling point of 120° C. to 155° C.
    Type: Grant
    Filed: April 29, 2019
    Date of Patent: September 27, 2022
    Assignee: FUJIFILM Corporation
    Inventors: Tetsuya Kamimura, Michihiro Shirakawa, Tadashi Oomatsu
  • Publication number: 20220275519
    Abstract: An object of the invention is to provide a cleaning liquid for semiconductor substrates having undergone a chemical mechanical polishing process, the cleaning liquid being excellent in corrosion prevention properties and defect suppression performance with respect to a metal film. Another object of the invention is to provide a method of cleaning semiconductor substrates having undergone a chemical mechanical polishing process. A cleaning liquid of the invention is used for semiconductor substrates having undergone a chemical mechanical polishing process and includes: an amine oxide compound that is a compound having an amine oxide group, or its salt; and at least one hydroxylamine compound selected from the group consisting of a hydroxylamine, a hydroxylamine derivative, and their salts, and the amine oxide compound content is 0.00001 to 0.15 mass % based on the total mass of the cleaning liquid.
    Type: Application
    Filed: May 19, 2022
    Publication date: September 1, 2022
    Applicant: FUJIFILM Corporation
    Inventors: Kohei HAYASHI, Tetsuya KAMIMURA
  • Publication number: 20220276561
    Abstract: An object of the present invention is to provide a chemical liquid having excellent developability and excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid storage body, a chemical liquid filling method, and a chemical liquid storage method. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent, a metal impurity, and an organic impurity, in which the metal impurity contains metal atoms, a total content of the metal atoms in the chemical liquid with respect to a total mass of the chemical liquid is equal to or smaller than 50 mass ppt, a total content of the organic impurity in the chemical liquid with respect to the total mass of the chemical liquid is 0.1 to 10,000 mass ppm, the organic impurity contains an alcohol impurity, and a mass ratio of a content of the alcohol impurity to the total content of the organic impurity is 0.0001 to 0.5.
    Type: Application
    Filed: May 10, 2022
    Publication date: September 1, 2022
    Applicant: FUJIFILM Corporation
    Inventors: Tetsuya KAMIMURA, Satomi Takahashi
  • Publication number: 20220260919
    Abstract: A treatment liquid for a semiconductor device includes an alkanolamine; a hydroxylamine; an organic solvent; Ca; Fe; and Na, wherein the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10?12 to 10?4.
    Type: Application
    Filed: May 6, 2022
    Publication date: August 18, 2022
    Applicant: FUJIFILM Corporation
    Inventors: Tomonori Takahashi, Tetsuya Kamimura
  • Publication number: 20220254624
    Abstract: There is provided a method of cleaning semiconductor substrates that is excellent in cleaning performance with respect to semiconductor substrates having undergone a chemical mechanical polishing process and corrosion prevention performance with respect to metal films. This method includes a cleaning step of cleaning a semiconductor substrate having undergone the CMP using a cleaning liquid. The cleaning liquid shows alkaline properties and contains: a component A that is at least one selected from the group consisting of a primary amine, a secondary amine, and a tertiary amine, provided that a compound represented by a specific formula (a) is excluded; and a component B that is a compound represented by the specific formula (a). The mass ratio of the component B content to the component A content is not more than 0.01. The cleaning liquid applied to the semiconductor substrate has a temperature of not lower than 30° C.
    Type: Application
    Filed: February 24, 2022
    Publication date: August 11, 2022
    Applicant: FUJIFILM Electronic Materials Co., Ltd.
    Inventor: Tetsuya KAMIMURA
  • Patent number: 11410859
    Abstract: The present invention provides a treatment liquid for a semiconductor device, which has excellent temporal stability of residue removal performance as well as excellent anticorrosion performance for an object to be treated. The treatment liquid of an aspect of the present invention is a treatment liquid for a semiconductor device contains one or more hydroxylamine compounds selected from the group consisting of hydroxylamine and a hydroxylamine salt, an organic basic compound, an alcohol-based solvent, and a surfactant, in which a content of the alcohol-based solvent with respect to a total mass of the treatment liquid is 40% to 85% by mass, and a pH is 8 or higher.
    Type: Grant
    Filed: September 22, 2020
    Date of Patent: August 9, 2022
    Assignee: FUJIFILM Corporation
    Inventors: Tetsuya Kamimura, Tomonori Takahashi
  • Patent number: 11401442
    Abstract: A polishing liquid is used for chemical mechanical polishing and includes colloidal silica; and an onium salt containing a cation, in which a content of the onium salt is more than 0.01% by mass, a zeta potential of the colloidal silica measured in a state where the colloidal silica is present in the polishing liquid is 15 mV or more, an electrical conductivity is 10 ?S/cm or more, and a pH is 2 to 4.
    Type: Grant
    Filed: July 23, 2020
    Date of Patent: August 2, 2022
    Assignee: FUJIFILM CORPORATION
    Inventor: Tetsuya Kamimura
  • Patent number: 11397383
    Abstract: A treatment liquid for a semiconductor device contains an organic alkali compound, a corrosion inhibitor, an organic solvent, Ca, Fe, and Na, in which each of the mass ratio of the Ca, the mass ratio of the Fe, and the mass ratio of the Na to the organic alkali compound in the treatment liquid is 10—12 to 10?4. A method for washing a substrate and a method for removing a resist use the treatment liquid.
    Type: Grant
    Filed: November 14, 2018
    Date of Patent: July 26, 2022
    Assignee: FUJIFILM Corporation
    Inventors: Tomonori Takahashi, Tetsuya Kamimura
  • Patent number: 11392046
    Abstract: A quality inspection method for a chemical liquid used for manufacturing a semiconductor substrate includes: a step W of preparing a first container and washing at least a portion of a liquid contact portion by using a portion of the chemical liquid, a step A of performing concentration of a portion of the chemical liquid by using the washed first container so as to obtain c liquid, a step B of performing measurement of a content of a specific component in c liquid, and a step C of comparing the content of the specific component with a preset standard value. At least the step W and the step A are performed in a clean room having cleanliness equal to or higher than class 4 specified in ISO14644-1:2015, the concentration is performed in inert gas or under reduced pressure, and the measurement is performed by a predetermined measurement method.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: July 19, 2022
    Assignee: FUJIFILM Corporation
    Inventor: Tetsuya Kamimura
  • Publication number: 20220221798
    Abstract: A storage container storing a treatment liquid for manufacturing a semiconductor. The treatment liquid for manufacturing a semiconductor includes: one compound (A) that satisfies the requirement (a); one compound (B) or two or more compounds (B) that satisfy the requirement (b); and one inorganic matter (C) or two or more inorganic matters (C) having any element selected from the group consisting of Al, B, S, N, and K. Here, a total content of the compound (B) in the treatment liquid is 10?10 to 0.1 mass %, and a ratio P of the inorganic matter (C) to the compound (B) is 103 to 10?6.
    Type: Application
    Filed: March 30, 2022
    Publication date: July 14, 2022
    Applicant: FUJIFILM Corporation
    Inventor: Tetsuya KAMIMURA
  • Patent number: 11372331
    Abstract: An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor with which the deterioration of lithographic performance or the occurrence of defects is suppressed such that a fine resist pattern or a fine semiconductor element can be manufactured. A treatment liquid for manufacturing a semiconductor according to an embodiment of the present invention includes: one compound (A) that satisfies the following requirement (a);one compound (B) or two or more compounds (B) that satisfy the following requirement (b); and one inorganic matter (C) or two or more inorganic matters (C) having any element selected from the group consisting of Al, B, S, N, and K. Here, a total content of the compound (B) in the treatment liquid is 10?10 to 0.1 mass %, and a ratio P of the inorganic matter (C) to the compound (B) represented by the following Expression I is 103 to 10?6.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: June 28, 2022
    Assignee: FUJIFILM Corporation
    Inventor: Tetsuya Kamimura
  • Patent number: 11359113
    Abstract: A polishing liquid, which is used for chemical mechanical polishing, includes ceria particles having an average aspect ratio of 1.5 or more; and an anionic polymer or a cationic polymer, in which a pH of the polishing liquid is 3 to 8. In a case where the polishing liquid contains the anionic polymer, the polishing liquid further includes an inorganic acid or an organic acid including at least one group selected from the group consisting of a carboxylic acid group, a phosphoric acid group, a phosphonic acid group, and a sulfonic acid group.
    Type: Grant
    Filed: July 27, 2020
    Date of Patent: June 14, 2022
    Assignee: FUJIFILM Corporation
    Inventor: Tetsuya Kamimura
  • Patent number: 11360389
    Abstract: An object of the present invention is to provide a chemical liquid having excellent developability and excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid storage body, a chemical liquid filling method, and a chemical liquid storage method. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent, a metal impurity, and an organic impurity, in which the metal impurity contains metal atoms, a total content of the metal atoms in the chemical liquid with respect to a total mass of the chemical liquid is equal to or smaller than 50 mass ppt, a total content of the organic impurity in the chemical liquid with respect to the total mass of the chemical liquid is 0.1 to 10,000 mass ppm, the organic impurity contains an alcohol impurity, and a mass ratio of a content of the alcohol impurity to the total content of the organic impurity is 0.0001 to 0.5.
    Type: Grant
    Filed: March 26, 2019
    Date of Patent: June 14, 2022
    Assignee: FUJIFILM Corporation
    Inventors: Tetsuya Kamimura, Satomi Takahashi
  • Publication number: 20220179320
    Abstract: A storage container storing a treatment liquid for manufacturing a semiconductor is provided, wherein the occurrence of defects on the semiconductor, such as particles, is suppressed and a fine resist pattern or a fine semiconductor element is manufactured. The storage container includes a storage portion that stores the treatment liquid, wherein the treatment liquid includes one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn, and a total content of particulate metal that is a metal component derived from the metal atoms and that is a nonionic metal component present in the treatment liquid as a solid without being dissolved is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid.
    Type: Application
    Filed: February 21, 2022
    Publication date: June 9, 2022
    Applicant: FUJIFILM Corporation
    Inventors: Tetsuya SHIMIZU, Tetsuya KAMIMURA
  • Publication number: 20220177814
    Abstract: There is provided a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in storage stability. In addition, there is provided a method of cleaning semiconductor substrates having undergone CMP. The cleaning liquid for semiconductor substrates having undergone CMP shows alkaline properties and contains: an amine compound that is at least one selected from the group consisting of a primary amine, a secondary amine, a tertiary amine, and their salts; a chelating agent; and water. The amine compound content is not less than 25.5 mass % and less than 90 mass % based on the total mass of the cleaning liquid, and the water content is 10 to 60 mass % based on the total mass of the cleaning liquid.
    Type: Application
    Filed: February 23, 2022
    Publication date: June 9, 2022
    Applicant: FUJIFILM Electronic Materials Co., Ltd.
    Inventor: Tetsuya KAMIMURA
  • Patent number: 11351503
    Abstract: An object of the present invention is to provide a chemical liquid purification method which makes it possible to obtain a chemical liquid having excellent defect inhibition performance. The chemical liquid purification method according to an embodiment of the present invention is a chemical liquid purification method including obtaining a chemical liquid by filtering a substance to be purified containing an organic solvent by using two or more kinds of filters having different pore sizes, in which a supply pressure P1 of the substance to be purified supplied to a filter Fmax having a maximum pore size X1 among the two or more kinds of filters and a supply pressure P2 of the substance to be purified supplied to a filter Fmin having a minimum pore size X2 among the two or more kinds of filters satisfy P1>P2.
    Type: Grant
    Filed: February 7, 2020
    Date of Patent: June 7, 2022
    Assignee: FUJIFILM Corporation
    Inventors: Tetsuya Kamimura, Masahiro Yoshidome, Yukihisa Kawada
  • Patent number: 11326048
    Abstract: A member contains a fluorine-containing polymer and a fluorine-containing surfactant, in which provided that a mass-based content of the fluorine-containing surfactant in at least a surface of a portion of the member is M1, and a mass-based content of the surfactant in a position 10 nm below the surface in a thickness direction of the member is M2, M1/M2 is 0.50 to 0.90, and an atom number ratio X1 of the number of fluorine atoms contained in the surface to the number of carbon atoms contained in the surface is 0.50 to 3.0.
    Type: Grant
    Filed: November 21, 2019
    Date of Patent: May 10, 2022
    Assignee: FUJIFILM Corporation
    Inventor: Tetsuya Kamimura