Abstract: An object of the present invention is to provide a chemical liquid which makes it difficult for a defect to occur on a substrate after development. Another object of the present invention is to provide a chemical liquid storage body and a pattern forming method. The chemical liquid of the according to an embodiment of the present invention contains a main agent which is formed of one kind of organic solvent or formed of a mixture of two or more kinds of organic solvents, an impurity metal, and a surfactant, in which a vapor pressure of the main agent is 60 to 1,340 Pa at 25° C., the impurity metal contains particles containing one kind of metal selected from the group consisting of Fe, Cr, Ni, and Pb, in a case where the chemical liquid contains one kind of particles, a content of the particles in the chemical liquid is 0.

Abstract: A treatment liquid for a semiconductor device is a treatment liquid including water, an organic solvent, and two or more nitrogen-containing aromatic heterocyclic compounds.

Abstract: The present invention provides a chemical liquid which makes it possible to obtain a resist pattern while inhibiting pattern interval variation in a case where the chemical liquid is used as a developer or rinsing solution. The present invention also provides a chemical liquid storage body, a resist pattern forming method, and a semiconductor chip manufacturing method. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing n-butyl acetate and isobutyl acetate, in which a content of the n-butyl acetate is 99.000% to 99.999% by mass with respect to a total mass of the chemical liquid, and a content of the isobutyl acetate is 1.0 to 1,000 mass ppm with respect to the total mass of the chemical liquid.

Abstract: An object of the present invention is to provide a chemical liquid and a chemical liquid storage body having excellent performance of inhibiting metal impurity-containing defects. The chemical liquid according to an embodiment of the present invention contains an organic solvent, organic impurities, and metal impurities, in which the organic impurities contain a phosphoric acid ester and an adipic acid ester, and a mass ratio of a content of the phosphoric acid ester to a content of the adipic acid ester is equal to or higher than 1.

Abstract: The present invention provides a manufacturing method of a semiconductor chip, in which the manufacturing yield is excellent, and a kit. According to the present invention, a manufacturing method of a semiconductor chip includes Process 1 of forming an insulating layer on a base material, Process 2 of forming a patterned resist film on the insulating layer, Process 3 of forming the insulating layer having an opening portion by etching the insulating layer with the patterned resist film as a mask, Process 4 of removing the patterned resist film, Process 5 of filling the opening portion of the insulating layer with metal, and Process 6 of performing chemical-mechanical polishing on the insulating layer filled with metal.

Abstract: The present invention provides a chemical liquid having excellent defect suppressing properties. The present invention further provides a chemical liquid storage body containing the chemical liquid. The chemical liquid of the present invention is a chemical liquid containing a compound other than an alkane and an alkene, and one or more organic solvents selected from the group consisting of decane and undecane, in which the chemical liquid further contains one or more organic components selected from the group consisting of alkanes having 12 to 50 carbon atoms and alkenes having 12 to 50 carbon atoms, and a content of the organic component is 0.10 to 1,000,000 mass ppt with respect to a total mass of the chemical liquid.

Abstract: The present invention provides a member which makes is possible to obtain excellent residue defect inhibition properties and excellent bridge defect inhibition properties of a chemical liquid in a case where the member is brought into contact with the chemical liquid. The present invention also provides a container, a chemical liquid storage body, a reactor, a distillation column, a filter unit, a storage tank, a pipe line, and a chemical liquid manufacturing method. The member according to an embodiment of the present invention is a member that will be brought into contact with a chemical liquid. A surface of the member is constituted with stainless steel containing chromium atoms and iron atoms. In a case where an atomic ratio of the chromium atoms to the iron atoms is measured from the surface of the member to a position 10 nm below the surface in a depth direction, a maximum value of the atomic ratio is found in a region extending 3 nm from the surface of the member in the depth direction.

Abstract: An object of the present invention is to provide a chemical liquid which exhibits excellent defect inhibition performance even after long-term preservation, a kit, a pattern forming method, a chemical liquid manufacturing method, and a chemical liquid storage body. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent, an acid component, and a metal component. The content of the acid component is equal to or greater than 1 mass ppt and equal to or smaller than 15 mass ppm with respect to the total mass of the chemical liquid. The content of the metal component is 0.001 to 100 mass ppt with respect to the total mass of the chemical liquid.

Abstract: The present invention provides a manufacturing method of a semiconductor chip, in which the manufacturing yield is excellent, and a kit. According to the present invention, a manufacturing method of a semiconductor chip includes Process 1 of forming an insulating layer on a base material, Process 2 of forming a patterned resist film on the insulating layer, Process 3 of forming the insulating layer having an opening portion by etching the insulating layer with the patterned resist film as a mask, Process 4 of removing the patterned resist film, Process 5 of filling the opening portion of the insulating layer with metal, and Process 6 of performing chemical-mechanical polishing on the insulating layer filled with metal.

Abstract: An object of the present invention is to provide a treatment liquid for a semiconductor device, which has excellent temporal stability of residue removing performance, and excellent anticorrosion performance for a treatment target. In addition, another object of the present invention is to provide a method for washing a substrate and a method for manufacturing a semiconductor device, each using the treatment liquid. The treatment liquid of an embodiment of the present invention is a treatment liquid for a semiconductor device, including at least one hydroxylamine compound selected from the group consisting of hydroxylamine and a hydroxylamine salt, at least one basic compound selected from the group consisting of an amine compound other than the hydroxylamine compound and a quaternary ammonium hydroxide salt, and at least one selected from the group consisting of a reducing agent other than the hydroxylamine compound and a chelating agent, and having a pH of 10 or more.

Abstract: The present invention provides a treatment liquid for a semiconductor device, which has excellent temporal stability of residue removal performance as well as excellent anticorrosion performance for an object to be treated. The treatment liquid of an aspect of the present invention is a treatment liquid for a semiconductor device contains one or more hydroxylamine compounds selected from the group consisting of hydroxylamine and a hydroxylamine salt, an organic basic compound, an alcohol-based solvent, and a surfactant, in which a content of the alcohol-based solvent with respect to a total mass of the treatment liquid is 40% to 85% by mass, and a pH is 8 or higher.

Abstract: An object of the present invention is to provide a chemical liquid which has excellent defect inhibition performance and hardly breaks a transfer pipe line that a device for manufacturing the chemical liquid includes at the time of manufacturing the chemical liquid. Another object of the present invention is to provide a chemical liquid storage body, a manufacturing method of a chemical liquid, and a manufacturing method of a chemical liquid storage body. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent and an ion of at least one kind of atom selected from the group consisting of an Fe atom, a Cr atom, a Ni atom, and a Pb atom, in which in a case where the chemical liquid contains one kind of the ion, a content of the metal ion is 0.1 to 100 mass ppt, in a case where the chemical liquid contains two or more kinds of the ions, a content of each of the metal ions is 0.

Abstract: A filtering device is for obtaining a chemical liquid by purifying a liquid to be purified, and the filtering device has an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path which includes the filter A and the filter B arranged in series and extends from the inlet portion to the outlet portion, in which the filter A is a porous membrane containing a polyimide-based resin.

Abstract: A filtering device is for obtaining a chemical liquid by purifying a liquid to be purified, and has an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path which includes the filter A and the filter B arranged in series between the inlet portion and the outlet portion and extends from the inlet portion to the outlet portion, in which the filter A includes at least one kind of porous membrane selected from the group consisting of a first porous membrane having a porous base material made of polytetrafluoroethylene and a non-crosslinked coating which is formed to cover the porous base material and contains a perfluorosulfonic acid polymer and a second porous membrane containing polytetrafluoroethylene blended with a perfluorosulfonic acid polymer.

Abstract: A filtering device for obtaining a chemical liquid by purifying a liquid to be purified has an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path which includes the filter A and the filter B arranged in series between the inlet portion and the outlet portion and extends from the inlet portion to the outlet portion, in which the filter A has a porous base material made of polyfluorocarbon and a coating layer which is disposed to cover the porous base material and contains a first resin having a hydrophilic group.

Abstract: A filtering device is used for obtaining a chemical liquid by purifying a liquid to be purified and includes an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path that includes the filter A and the filter B arranged in series and extends from the inlet portion to the outlet portion. The filter A has a porous membrane made of ultra-high-molecular-weight polyethylene and a resin layer disposed to cover at least a portion of the surface of the porous membrane, and the resin layer includes a resin having a neutral group or an ion exchange group.

Abstract: An object of the present invention is to provide a treatment liquid having excellent resist film removal performance and excellent residue removal performance. Another object of the present invention is to provide a treatment method. The treatment liquid of an embodiment of the present invention is a treatment liquid containing an alkali compound and a hydroxycarboxylic acid, in which abrasive particles are not substantially contained, and a content mass ratio of a content of the hydroxycarboxylic acid to a content of the alkali compound is 0.001 and 1.0.

Abstract: A polishing liquid used for chemical mechanical polishing includes colloidal silica, in which a zeta potential of the colloidal silica measured in a state where the colloidal silica is present in the polishing liquid is ?20 mV or less, an electrical conductivity is 200 ?S/cm or less, a pH is 2 to 6, and a transmittance is 70% to 99%.

Abstract: A filtering device is for obtaining a chemical liquid by purifying a liquid to be purified and has an inlet portion, an outlet portion, a filter A, a filter B different from the filter A, and a flow path extending from the inlet portion to the outlet portion, in which the filter A and the filter B are arranged in series between the inlet portion and the outlet portion and have, and the filter A is selected from the group consisting of predetermined filters A1, A2, and A3.

Abstract: A filtering device is for obtaining a chemical liquid by purifying a liquid to be purified, and the filtering device has an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path which includes the filter A and the filter B arranged in series and extends from the inlet portion to the outlet portion, in which the filter A has a porous base material made of polyfluorocarbon and a coating layer which is disposed to cover the porous base material and contains a resin having an adsorptive group.