Abstract: An electrostatic chuck with a heater includes: a base formed of a sintered body containing alumina; an ESC electrode provided in an upper portion side in the base; and a resistance heating body embedded in a lower portion side in the base. The base is composed of a dielectric layer from the ESC electrode to an upper surface of the base, and of a support member from the ESC electrode to a lower surface of the base. In the support member, a carbon content differs between an ESC electrode neighborhood in contact with the dielectric layer and a lower region below the ESC electrode neighborhood, a carbon content in the dielectric layer is 100 wt ppm or less, the carbon content in the ESC electrode neighborhood is 0.13 wt % or less, the carbon content in the lower region is 0.03 wt % or more but 0.5 wt % or less, and the carbon content in the ESC electrode neighborhood is smaller than the carbon content in the lower region. The resistance heating body contains niobium or platinum.

Abstract: An electrostatic chuck includes: a base body; an electrode formed on the base body and generating coulomb force; and a dielectric layer formed on the base body and electrode, having a plurality of projections on a first main face on the side supporting a substrate attracted by the coulomb force, and supporting the substrate on the upper surfaces of these projections. The projections are arranged at substantially uniform intervals. The surface roughness (Ra) of the projection upper faces is 0.5 ?m or smaller. The height of the projections is 5 to 20 ?m. The relation A1/2×B2>200 is satisfied where A (number/100 cm2) is the number of the projections per unit area of 100 cm2 in the first main face, and B (?m) is the height of the projections.

Abstract: An electrostatic chuck includes, a base plate made of ceramic, an electrode for generating an electrostatic clamping force, and a dielectric material layer formed on the electrode and made of ceramic having a volume resistivity of not less than 1×1015 ?·cm at 100° C. and the same main constituent as the base plate. The base plate has a higher thermal conductivity than the dielectric material layer.

Abstract: A joined body and method of producing the joined body are provided. A first member containing at least a ceramic and a second member containing at least one of a metal and a metal composite are joined with each other via a metal adhesive. The metal adhesive contains at least indium and at least one material containing at least a component capable of reducing the melting point of indium and is provided between the first and second members to provide a laminate. The laminate is heated at a temperature in a solid-liquid coexisting range of an alloy comprising indium and the indium melting point reducing component to join the first and second members.

Abstract: A substrate mounting apparatus, comprises a ceramic base having a substrate mounting surface, and a jointing layer, which is formed on an opposite surface to the substrate mounting surface of the ceramic base, and has jointing materials differing in a thermal conductivity by in-plane regions and arranged in the regions.

Abstract: An electrostatic chuck comprises a dielectric ceramic layer made of an alumina sintered body having a volume resistivity equal to or greater than about 1×1017?·cm at room temperature and a volume resistivity equal to or greater than about 1×1014?·cm at 300° C., and an electrode formed on one surface of the dielectric ceramic layer.

Abstract: A method of fabricating a substrate placing stage includes the step of providing a plate-shaped ceramic base having a substrate placing surface on a side of the ceramic base. The method includes the step of providing a plate-shaped ceramic base formed of a composite material containing components of a ceramic material and an aluminum alloy. The method includes the step of inserting a joint material including an aluminum alloy layer between the ceramic base and the cooling member. The method includes the step of heating the joint material at a temperature in a range from TS ° C. to (TS-30) ° C. (TS ° C.: a solidus temperature of the aluminum alloy). The method includes the step of pressing substantially normally joint surfaces of the ceramic base and the cooling member, thereby joining the ceramic base and the cooling member via the joint material to obtain a joint layer including the aluminum alloy layer having a thickness in a range from 50 ?m to 200 ?m after joining.

Abstract: An electrostatic adsorption device has a dielectric layer, electrodes, a cooling member and an insulating adhesive. The dielectric layer is made of a ceramic dielectric material and has an adsorption face and a back face. The electrodes are provided on the back face of the dielectric layer and gaps are defined between the portions of the electrodes. The insulating adhesive is provided between the back face of the dielectric layer and the cooling member. The insulating adhesive covers the electrodes and the back face and is provided in the gaps.

Abstract: A first member 10 containing at least ceramics and a second member 12 containing at least a metal or a metal composite was joined with each other. An adhesive 2 composed of a metal containing at least indium and materials 1A, 1B containing at least a component capable of reducing the melting point of indium between the first and second members to provide a laminate 13. The laminate 13 is heated at a temperature in solid-liquid coexisting range of an alloy comprising indium and said component to join the first member 10 and second member 12.

Abstract: An electrostatic adsorption device 1B has a dielectric layer 2, electrodes 4A and 4B, a cooling member 5 and an insulating adhesive 3. The dielectric layer 2 is made of a ceramic dielectric material and has an adsorption face and a back face. The electrodes 4A and 4B are provided on the back face 2b of the dielectric layer 2. The electrodes 4A and 4B define gaps 10. The insulating adhesive 3 is provided between the back face 2b of the dielectric layer 2 and the cooling member 5. The insulating adhesive 3 covers the electrodes 4A and 4B and the back face 2b and is provided in the gap 10.

Abstract: In a plasma processing apparatus, a temperature control of a substrate to be processed is improved. A ceramic made support member having a substantially cylindrical shape is provided in a process chamber. An upper end of the support member is airtightly connected to a back surface of a placement table by solid state bonding. A lower end of the support member is airtightly connected to a bottom of the process chamber via a lower cooling jacket and O-rings. A cooling jacket made of a disc-like aluminum block is provided in an atmosphere chamber formed inside the support member. The cooling jacket is mounted to the back surface of the placement table via a heat conductive sheet member.

Abstract: A semiconductor wafer-holder having a member for holding the semiconductor wafer with a basic member made of a ceramic nitride, a cooling equipment made of a metal, and an intervened layer between the semiconductor wafer-holding member and the cooling equipment, the intervened layer being composed of a metallic foil or a carbon sheet having a thickness of not more than 500 &mgr;m.