Abstract: A substrate processing apparatus includes a reaction tube defining a substrate processing chamber; a gas inlet provided at a lower portion of the reaction tube to supply a process gas; a first buffer unit for temporarily retaining the process gas, the first buffer unit at a first side of an inner surface of the reaction tube and includes a plurality of gas supply holes; and a gas outlet provided at a second side of the inner surface of the reaction tube opposite to the first side, to exhaust the process gas from the process chamber. The gas supply holes are provided from an upper end portion of the first buffer unit to a lower end portion of the first buffer unit, and the process gas is supplied through the plurality of gas supply holes into the process chamber, passes through the process chamber, and exhausted through the gas outlet.

Abstract: Described herein is a technique capable of reducing a difference in processing results between substrates. According to one aspect of the technique, there is provided a reaction tube having a process chamber; a gas introduction portion provided at a lower end; a first supplier provided along a side surface to face a substrate processing region; and a preheating portion provided lower than the substrate processing region, the preheating portion including: a first preheating portion extending in a direction from the gas introduction portion toward a ceiling; and a second preheating portion extending in a direction perpendicular to the above direction, wherein the preheating portion connects the gas introduction portion with the first supplier by combining the first preheating portion and the second preheating portion.

Abstract: A substrate processing apparatus includes a reaction tube defining a substrate processing chamber; a gas inlet provided at a lower portion of the reaction tube to supply a process gas; a first buffer unit for temporarily retaining the process gas, the first buffer unit at a first side of an inner surface of the reaction tube and includes a plurality of gas supply holes; and a gas outlet provided at a second side of the inner surface of the reaction tube opposite to the first side, to exhaust the process gas from the process chamber. The gas supply holes are provided from an upper end portion of the first buffer unit to a lower end portion of the first buffer unit, and the process gas is supplied through the plurality of gas supply holes into the process chamber, passes through the process chamber, and exhausted through the gas outlet.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a reaction tube, a substrate holder, a gas nozzle, a heating unit, a temperature detector, and an exhaust unit. The reaction tube accommodates and processes substrates. The substrate holder holds substrates stacked at predetermined intervals in the reaction tube. The gas nozzle is installed along a stacked direction of the substrates. The heating unit heats the substrates. The temperature detector is installed along the stacked direction of the substrates. The exhaust unit exhausts an inside atmosphere of the reaction tube. Each of the gas nozzle and the temperature detector includes first and second parts and is supported by a narrow tube supporting member including first and second supporting parts. The first supporting part makes contact with the first part. The second supporting part is parallel with the second part and supports the second part.

Abstract: Formation of a boron compound is suppressed on the inner wall of a nozzle disposed in a high-temperature region of a process chamber. A semiconductor device manufacturing method comprises forming a boron doped silicon film by simultaneously supplying at least a boron-containing gas as a constituent element and a chlorine-containing gas a constituent element to a gas supply nozzle installed in a process chamber in a manner that concentration of chlorine (Cl) is higher than concentration of boron in the gas supply nozzle.

Abstract: Formation of a boron (B) compound is suppressed on the inner wall of a nozzle disposed in a high-temperature region of a process chamber. A semiconductor device manufacturing method comprises forming a boron (B)-doped silicon film by simultaneously supplying at least a gas containing boron (B) as a constituent element and a gas containing chlorine (Cl) as a constituent element to a gas supply nozzle installed in a process chamber in a manner such that concentration of chlorine (Cl) is higher than concentration of boron (B) in the gas supply nozzle.

Abstract: Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a reaction tube, a substrate holder, a gas nozzle, a heating unit, a temperature detector, and an exhaust unit. The reaction tube accommodates and processes substrates. The substrate holder holds substrates stacked at predetermined intervals in the reaction tube. The gas nozzle is installed along a stacked direction of the substrates. The heating unit heats the substrates. The temperature detector is installed along the stacked direction of the substrates. The exhaust unit exhausts an inside atmosphere of the reaction tube. Each of the gas nozzle and the temperature detector includes first and second parts and is supported by a narrow tube supporting member including first and second supporting parts. The first supporting part makes contact with the first part. The second supporting part is parallel with the second part and supports the second part.

Abstract: A substrate processing apparatus comprises a semiconductor wafer processing chamber, a wafer transfer device, a wafer cassette holding unit, a wafer cassette transfer device and a wafer cassette bringing in/out section disposed in this order and a housing. The wafer cassette holding unit is movable between a wafer processing time position and a maintenance time position thereof and the wafer cassette transfer device is movable between a wafer processing time position and a maintenance time position thereof. The wafer cassette bringing in/out section is capable of rotating forward of the housing, whereby the front face of said housing is opened.

Abstract: A substrate processing apparatus comprises a semiconductor wafer processing chamber, a wafer transfer device, a wafer cassette holding unit, a wafer cassette transfer device and a wafer cassette bringing in/out section disposed in this order and a housing. The wafer cassette holding unit is movable between a wafer processing time position and a maintenance time position thereof and the wafer cassette transfer device is movable between a wafer processing time position and a maintenance time position thereof. The wafer cassette bringing in/out section is capable of rotating forward of the housing, whereby the front face of said housing is opened.