Abstract: A sensor device includes: a silicon substrate; a first electrode provided at an active surface side of the silicon substrate; an external connection terminal provided at the active surface side so as to be electrically connected to the first electrode; a stress relief layer provided between the silicon substrate and the external connection terminal; and a vibrating gyro element as a sensor element including a extraction electrode. The vibrating gyro element is held to the silicon substrate by connection between the extraction electrode and the external connection terminal.

Abstract: A method of manufacturing an electronic device, the method includes: preparing a first lead frame having a first lead, the first lead having a first portion located in a first region; electrically connecting the first lead and a first electronic part; bending the first lead such that the first portion is located outside the first region; arranging a second lead frame to overlap the first lead frame such that a second portion of a second lead of the second lead frame is located in the first region; and electrically connecting the second lead and the second electronic part.

Abstract: A semiconductor device manufacturing method includes (a) bonding a first surface of a metal plate to a substrate, (b) forming a plurality of metal posts that are arranged in vertical and lateral directions in a plan view and include a first metal post and a second metal post, by partially etching the metal plate bonded to the substrate from a second surface of the metal plate, (c) fixing an integrated circuit (IC) element to the second surface of the first metal post, (d) coupling the second metal post and a pad terminal of the integrated circuit element via a conductive material, (e) resin-sealing the integrated circuit element, the metal posts, and the conductive material by providing a resin onto the substrate, and (f) removing the substrate from the resin and the first surfaces of the metal posts sealed using the resin.

Abstract: A semiconductor device manufacturing method includes (a) bonding a first surface of a metal plate to a substrate, (b) forming a plurality of metal posts that are arranged in vertical and lateral directions in a plan view and include a first metal post and a second metal post, by partially etching the metal plate bonded to the substrate from a second surface of the metal plate, (c) fixing an integrated circuit (IC) element to the second surface of the first metal post, (d) coupling the second metal post and a pad terminal of the integrated circuit element via a conductive material, (e) resin-sealing the integrated circuit element, the metal posts, and the conductive material by providing a resin onto the substrate, and (f) removing the substrate from the resin and the first surfaces of the metal posts sealed using the resin.

Abstract: A first conductive layer is formed. An insulating layer is formed so that at least a part of the insulating layer is disposed on the first conductive layer. A second conductive layer is formed so that at least a part of the second conductive layer is disposed on the insulating layer over the first conductive layer. Each of the first and second conductive layers is formed by discharging drops of a solvent containing fine particles of a conductive material. The insulating layer is formed by discharging drops of a solvent containing fine particles of an insulating material.

Abstract: A first conductive layer is formed. An insulating layer is formed so that at least a part of the insulating layer is disposed on the first conductive layer. A second conductive layer is formed so that at least a part of the second conductive layer is disposed on the insulating layer over the first conductive layer. Each of the first and second conductive layers is formed by discharging drops of a solvent containing fine particles of a conductive material. The insulating layer is formed by discharging drops of a solvent containing fine particles of an insulating material.

Abstract: A first conductive layer is formed. An insulating layer is formed so that at least a part of the insulating layer is disposed on the first conductive layer. A second conductive layer is formed so that at least a part of the second conductive layer is disposed on the insulating layer over the first conductive layer. Each of the first and second conductive layers is formed by discharging drops of a solvent containing fine particles of a conductive material. The insulating layer is formed by discharging drops of a solvent containing fine particles of an insulating material.

Abstract: A semiconductor device manufacturing method includes (a) bonding a first surface of a metal plate to a substrate, (b) forming a plurality of metal posts that are arranged in vertical and lateral directions in a plan view and include a first metal post and a second metal post, by partially etching the metal plate bonded to the substrate from a second surface of the metal plate, (c) fixing an integrated circuit (IC) element to the second surface of the first metal post, (d) coupling the second metal post and a pad terminal of the integrated circuit element via a conductive material, (e) resin-sealing the integrated circuit element, the metal posts, and the conductive material by providing a resin onto the substrate, and (f) removing the substrate from the resin and the first surfaces of the metal posts sealed using the resin.

Abstract: A semiconductor device according to claim 1, wherein A method of manufacturing a semiconductor chip the carrier substrate A semiconductor device includes; a carrier substrate in which a semiconductor chip is mounted; a first land that is mounted on the carrier substrate and placed on a region which is differ from a region for mounting the semiconductor chip, and a basis metal of an junction surface of the first land is exposed; and a second land that is mounted on the carrier substrate and placed on a region which is differ from a region for mounting the semiconductor chip, and a plating layer is deposited on a junction surface of the second land.

Abstract: A receiving layer formed of a thermoplastic resin is softened by applying heat. By using a solvent containing conductive particles, an interconnect layer is formed on the receiving layer which is softened by the application of heat. The conductive particles are bonded together by heating the interconnect layer.

Abstract: A receiving layer is formed from a thermosetting resin precursor. An interconnecting layer is formed on the receiving layer from a dispersion liquid containing conductive particles. Heat is applied to the receiving layer and the interconnecting layer to cure the thermosetting resin precursor and to bond the conductive particles together.

Abstract: A first conductive layer is formed. An insulating layer is formed so that at least a part of the insulating layer is disposed on the first conductive layer. A second conductive layer is formed so that at least a part of the second conductive layer is disposed on the insulating layer over the first conductive layer. Each of the first and second conductive layers is formed by discharging drops of a solvent containing fine particles of a conductive material. The insulating layer is formed by discharging drops of a solvent containing fine particles of an insulating material.

Abstract: A semiconductor device according to claim 1, wherein A method of manufacturing a semiconductor chip the carrier substrate A semiconductor device includes; a carrier substrate in which a semiconductor chip is mounted; a first land that is mounted on the carrier substrate and placed on a region which is differ from a region for mounting the semiconductor chip, and a basis metal of an junction surface of the first land is exposed; and a second land that is mounted on the carrier substrate and placed on a region which is differ from a region for mounting the semiconductor chip, and a plating layer is deposited on a junction surface of the second land.

Abstract: A semiconductor device, comprises: a carrier substrate in which a semiconductor chip is mounted; and a land formed in the carrier substrate and arranged in a region different from the mounting face of the semiconductor chip, wherein a coarse face, the surface roughness of which is 20 through 100 ?m, is formed in a bonding face of the land.

Abstract: A receiving layer is formed from a thermosetting resin precursor. An interconnecting layer is formed on the receiving layer from a dispersion liquid containing conductive particles. Heat is applied to the receiving layer and the interconnecting layer to cure the thermosetting resin precursor and to bond the conductive particles together.

Abstract: A receiving layer formed of a thermoplastic resin is softened by applying heat. By using a solvent containing conductive particles, an interconnect layer is formed on the receiving layer which is softened by the application of heat. The conductive particles are bonded together by heating the interconnect layer.

Abstract: A first conductive layer is formed. An insulating layer is formed so that at least a part of the insulating layer is disposed on the first conductive layer. A second conductive layer is formed so that at least a part of the second conductive layer is disposed on the insulating layer over the fist conductive layer. Each of the first and second conductive layers is formed by discharging drops of a solvent containing fine particles of a conductive material. The insulating layer is formed by discharging drops of a solvent containing fine particles of an insulating material.

Abstract: An apparatus and method for measuring thermophysical property value of a specimen. The apparatus includes a heating laser and probe laser for measuring at least one characteristic on the surface of the specimen. A detector detects the reflected probe laser beam, and a computer calculates the thermophysical property value of the specimen based on the reflected probe laser beam.

Abstract: An apparatus and method for measuring thermophysical property value of a specimen. The apparatus includes a heating laser and probe laser for ? on the surface of the specimen. A detector detects the reflected probe laser beam, and a computer calculates the thermophysical property value of the specimen based on the reflected probe laser beam.

Abstract: A resin sealing type semiconductor device comprises an element mounting member (10) having an element mounting surface (12), a semiconductor element (20) bonded to the element mounting surface (12), a plurality of leads (30) provided and separated from the semiconductor element (20), a frame lead (36) disposed between these leads (30) and the semiconductor element (20), various wires (40) and a resin sealing portion which seals the element mounting member (10), the semiconductor element (20), parts of the leads (30) and the frame lead (36). The leads (30) include first inner leads (32a) disposed discontinuously with the frame lead (36) and second leads (32b) disposed integrally with the frame lead (36).The resin sealing type semiconductor device has good heat radiation characteristics and high reliability. Wire bonding with a highly flexible wiring arrangement design is provided by using leads commonly.