Patents by Inventor Tetsuya OYAMADA
Tetsuya OYAMADA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10950570Abstract: There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 ?m.Type: GrantFiled: April 21, 2015Date of Patent: March 16, 2021Assignees: NIPPON STEEL CHEMICAL & MATERIAL CO., LTD., NIPPON MICROMETAL CORPORATIONInventors: Tetsuya Oyamada, Tomohiro Uno, Hiroyuki Deai
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Patent number: 10950571Abstract: The present invention provides a bonding wire for a semiconductor device suitable for cutting-edge high-density LSIs and on-vehicle LSIs by improving the formation rate of Cu—Al IMC in ball bonds. A bonding wire for a semiconductor device contains Pt of 0.1 mass % to 1.3 mass %, at least one dopant selected from a first dopant group consisting of In, Ga, and Ge, for a total of 0.05 mass % to 1.25 mass %, and a balance being made up of Cu and incidental impurities.Type: GrantFiled: February 14, 2018Date of Patent: March 16, 2021Assignees: NIPPON STEEL CHEMICAL & MATERIAL CO., LTD., NIPPON MICROMETAL CORPORATIONInventors: Tetsuya Oyamada, Tomohiro Uno, Takashi Yamada, Daizo Oda, Motoki Eto
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Publication number: 20210043599Abstract: It is an object to provide a Cu alloy bonding wire for a semiconductor device that can satisfy required performance in high-density LSI applications. In the Cu alloy bonding wire for a semiconductor device according to the present invention, each of abundance ratios of crystal orientations <100>, <110> and <111> having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis out of crystal orientations on a wire surface is 3% or more and less than 27% in average area percentage.Type: ApplicationFiled: September 20, 2019Publication date: February 11, 2021Inventors: Tetsuya Oyamada, Tomohiro UNO, Takashi YAMADA, Dizo ODA
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Patent number: 10840208Abstract: The present invention provides a bonding wire capable of simultaneously satisfying ball bonding reliability and wedge bondability required of bonding wires for memories, the bonding wire including a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at % with a balance being made up of Ag and incidental impurities; and a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, with a balance being made up of incidental impurities, wherein the coating layer is 0.005 to 0.070 ?m in thickness.Type: GrantFiled: December 11, 2015Date of Patent: November 17, 2020Assignees: NIPPON STEEL CHEMICAL & MATERIAL CO., LTD, NIPPON MICROMETAL CORPORATIONInventors: Tetsuya Oyamada, Tomohiro Uno, Daizo Oda, Takashi Yamada
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Patent number: 10790259Abstract: The present invention provides a Cu alloy bonding wire for a semiconductor device, where the bonding wire can satisfy requirements of high-density LSI applications. In the Cu alloy bonding wire for a semiconductor device, the abundance ratio of a crystal orientation <110> having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis to crystal orientations on a wire surface is 25% or more and 70% or less in average area percentage.Type: GrantFiled: August 7, 2018Date of Patent: September 29, 2020Assignees: NIPPON STEEL CHEMICAL & MATERIAL CO., LTD., NIPPON MICROMETAL CORPORATIONInventors: Tetsuya Oyamada, Tomohiro Uno, Takashi Yamada, Daizo Oda
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Publication number: 20200279824Abstract: The present invention provides a bonding wire for a semiconductor device, where the bonding wire can inhibit wear of capillary. In a Cu alloy bonding wire for a semiconductor device, a total of abundance ratios of a crystal orientations <110> and <111> having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis is to crystal orientations on a wire surface 40% or more and 90% or less, in average area percentage.Type: ApplicationFiled: August 7, 2018Publication date: September 3, 2020Inventors: Tetsuya OYAMADA, Tomohiro UNO, Takashi YAMADA, Daizo ODA
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Publication number: 20200168578Abstract: The present invention provides a Cu alloy bonding wire for a semiconductor device, where the bonding wire can satisfy requirements of high-density LSI applications. In the Cu alloy bonding wire for a semiconductor device, the abundance ratio of a crystal orientation <110> having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis to crystal orientations on a wire surface is 25% or more and 70% or less in average area percentage.Type: ApplicationFiled: August 7, 2018Publication date: May 28, 2020Inventors: Tetsuya OYAMADA, Tomohiro UNO, Takashi YAMADA, Daizo ODA
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Patent number: 10529683Abstract: A bonding wire for a semiconductor device, which is suitable for on-vehicle devices bonding wire, has excellent capillary wear resistance and surface flaw resistance while ensuring high bonding reliability and further satisfies overall performance including ball formability and wedge bondability, the bonding wire including: a Cu alloy core material; a Pd coating layer formed on a surface of the Cu alloy core material; and a Cu surface layer formed on a surface of the Pd coating layer, in which the bonding wire for semiconductor device contains Ni, a concentration of the Ni in the bonding wire is 0.1 to 1.2 wt. %, the Pd coating layer is 0.015 to 0.150 ?m in thickness, and the Cu surface layer is 0.0005 to 0.0070 ?m in thickness.Type: GrantFiled: June 24, 2016Date of Patent: January 7, 2020Assignees: NIPPON STEEL CHEMICAL & MATERIAL CO., LTD., NIPPON MICROMETAL CORPORATIONInventors: Tetsuya Oyamada, Tomohiro Uno, Daizo Oda, Takashi Yamada
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Publication number: 20190326246Abstract: The present invention provides a bonding wire for a semiconductor device suitable for cutting-edge high-density LSIs and on-vehicle LSIs by improving the formation rate of Cu—Al IMC in ball bonds. A bonding wire for a semiconductor device contains Pt of 0.1 mass % to 1.3 mass %, at least one dopant selected from a first dopant group consisting of In, Ga, and Ge, for a total of 0.05 mass % to 1.25 mass %, and a balance being made up of Cu and incidental impurities.Type: ApplicationFiled: February 14, 2018Publication date: October 24, 2019Applicants: NIPPON STEEL CHEMICAL & MATERIAL CO., LTD., NIPPON MICROMETAL CORPORATIONInventors: Tetsuya OYAMADA, Tomohiro UNO, Takashi YAMADA, Daizo ODA, Motoki ETO
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Patent number: 10381320Abstract: The present invention provides a bonding wire which can satisfy bonding reliability, spring performance, and chip damage performance required in high-density packaging. A bonding wire contains one or more of In, Ga, and Cd for a total of 0.05 to 5 at %, and a balance being made up of Ag and incidental impurities.Type: GrantFiled: May 20, 2015Date of Patent: August 13, 2019Assignees: NIPPON STEEL CHEMICAL & MATERIAL CO., LTD., NIPPON MICROMETAL CORPORATIONInventors: Tetsuya Oyamada, Tomohiro Uno, Hiroyuki Deai, Daizo Oda
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Publication number: 20180374815Abstract: A bonding wire for a semiconductor device, which is suitable for on-vehicle devices bonding wire, has excellent capillary wear resistance and surface flaw resistance while ensuring high bonding reliability and further satisfies overall performance including ball formability and wedge bondability, the bonding wire including: a Cu alloy core material; a Pd coating layer formed on a surface of the Cu alloy core material; and a Cu surface layer formed on a surface of the Pd coating layer, in which the bonding wire for semiconductor device contains Ni, a concentration of the Ni in the bonding wire is 0.1 to 1.2 wt. %, the Pd coating layer is 0.015 to 0.150 ?m in thickness, and the Cu surface layer is 0.0005 to 0.0070 ?m in thickness.Type: ApplicationFiled: June 24, 2016Publication date: December 27, 2018Inventors: Tetsuya OYAMADA, Tomohiro UNO, Daizo ODA, Takashi YAMADA
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Publication number: 20180374816Abstract: The present invention has as its object the provision of a bonding wire for semiconductor devices mainly comprised of Ag, in which bonding wire for semiconductor devices, the bond reliability demanded for high density mounting is secured and simultaneously a sufficient, stable bond strength is realized at a ball bond, no neck damage occurs even in a low loop, the leaning characteristic is excellent, and the FAB shape is excellent. To solve this problem, the bonding wire for semiconductor devices according to the present invention contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities.Type: ApplicationFiled: September 23, 2016Publication date: December 27, 2018Inventors: Daizo ODA, Takumi OHKABE, Teruo HAIBARA, Takashi YAMADA, Tetsuya OYAMADA, Tomohiro UNO
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Patent number: 10032741Abstract: There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices. The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 ?m. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175° C. or more.Type: GrantFiled: June 5, 2015Date of Patent: July 24, 2018Assignees: NIPPON MICROMETAL CORPORATION, NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.Inventors: Daizo Oda, Motoki Eto, Takashi Yamada, Teruo Haibara, Ryo Oishi, Tomohiro Uno, Tetsuya Oyamada
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Publication number: 20170365576Abstract: The present invention provides a bonding wire capable of simultaneously satisfying ball bonding reliability and wedge bondability required of bonding wires for memories, the bonding wire including a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at % with a balance being made up of Ag and incidental impurities; and a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, with a balance being made up of incidental impurities, wherein the coating layer is 0.005 to 0.070 ?m in thickness.Type: ApplicationFiled: December 11, 2015Publication date: December 21, 2017Inventors: Tetsuya OYAMADA, Tomohiro UNO, Daizo ODA, Takashi YAMADA
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Publication number: 20170323864Abstract: There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices. The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 ?m. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175° C. or more.Type: ApplicationFiled: June 5, 2015Publication date: November 9, 2017Inventors: Daizo ODA, Motoki ETO, Takashi YAMADA, Teruo HAIBARA, Ryo OISHI, Tomohiro UNO, Tetsuya OYAMADA
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Patent number: 9812421Abstract: Provided is a bonding wire capable of reducing the occurrence of defective loops. The bonding wire includes: a core material which contains more than 50 mol % of a metal M; an intermediate layer which is formed over the surface of the core material and made of Ni, Pd, the metal M, and unavoidable impurities, and in which the concentration of the Ni is 15 to 80 mol %; and a coating layer formed over the intermediate layer and made of Ni, Pd and unavoidable impurities. The concentration of the Pd in the coating layer is 50 to 100 mol %. The metal M is Cu or Ag, and the concentration of Ni in the coating layer is lower than the concentration of Ni in the intermediate layer.Type: GrantFiled: December 4, 2014Date of Patent: November 7, 2017Assignees: NIPPON STEEL & SUMIKIN MATERIALS CO., LTD., NIPPON MICROMETAL CORPORATIONInventors: Tomohiro Uno, Yoshiaki Hagiwara, Tetsuya Oyamada, Daizo Oda
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Publication number: 20170110430Abstract: The present invention provides a bonding wire which can satisfy bonding reliability, spring performance, and chip damage performance required in high-density packaging. A bonding wire contains one or more of In, Ga, and Cd for a total of 0.05 to 5 at %, and a balance being made up of Ag and incidental impurities.Type: ApplicationFiled: May 20, 2015Publication date: April 20, 2017Inventors: Tetsuya OYAMADA, Tomohiro UNO, Hiroyuki DEAI, Daizo ODA
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Publication number: 20170040281Abstract: There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 ?m.Type: ApplicationFiled: April 21, 2015Publication date: February 9, 2017Inventors: Tetsuya OYAMADA, Tomohiro UNO, Hiroyuki DEAI
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Publication number: 20160315063Abstract: Provided is a bonding wire capable of reducing the occurrence of defective loops. The bonding wire includes: a core material which contains more than 50 mol % of a metal M; an intermediate layer which is formed over the surface of the core material and made of Ni, Pd, the metal M, and unavoidable impurities, and in which the concentration of the Ni is 15 to 80 mol %; and a coating layer formed over the intermediate layer and made of Ni, Pd and unavoidable impurities. The concentration of the Pd in the coating layer is 50 to 100 mol %. The metal M is Cu or Ag, and the concentration of Ni in the coating layer is lower than the concentration of Ni in the intermediate layer.Type: ApplicationFiled: December 4, 2014Publication date: October 27, 2016Inventors: Tomohiro UNO, Yoshiaki HAGIWARA, Tetsuya OYAMADA, Daizo ODA