Abstract: A method for fabricating a light-emitting semiconductor device including a III-Nitride quantum well layer includes selecting a facet orientation of the quantum well layer to control a field strength of a piezoelectric field and/or a field strength of a spontaneous electric field in the quantum well layer, and growing the quantum well layer with the selected facet orientation. The facet orientation may be selected to reduce the magnitude of a piezoelectric field and/or the magnitude of a spontaneous electric field, for example. The facet orientation may also be selected to control or reduce the magnitude of the combined piezoelectric and spontaneous electric field strength. As a result of the reduced magnitude of piezoelectric, spontaneous, or combined piezoelectric and spontaneous electric field strengths in their quantum well layers, light-emitting devices in accordance with the present invention may generate light with increased efficiency compared to prior art devices.

Abstract: The instant specification discloses a flat battery constituted by sealing a power generation element with: a case that works as one electrode terminal; a sealing plate that works as the other electrode terminal and has a flat central section projected outward and a flat peripheral section extending substantially parallel to the flat central section; and a gasket that insulates the case from the sealing plate, characterized in that the peripheral section of the sealing plate has an outer circumferential part being bent, or the case has a turned edge provided to make the peripheral section of the sealing plate fitted therein via the gasket and to partly press the gasket. The flat battery of the present invention having improvement in shape of the sealing plate and/or the case is sufficiently thin and exerts the effects of high leakage resistance and excellent mass productivity.

Abstract: A nitride semiconductor device that comprises a first layer, a second layer and a buffer layer sandwiched between the first layer and the second layer. The second layer is a layer of a single-crystal nitride semiconductor material including AlN and has a thickness greater than the thickness at which cracks would form if the second layer were grown directly on the first layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AlN. Incorporating the nitride semiconductor device into a semiconductor laser diode enables the laser diode to generate coherent light having a far-field pattern that exhibits a single peak.

Abstract: An optical semiconductor device having a plurality of GaN-based semiconductor layers containing a strained quantum well layer in which the strained quantum well layer has a piezoelectric field that depends on the orientation of the strained quantum well layer when the quantum layer is grown. In the present invention, the strained quantum well layer is grown with an orientation at which the piezoelectric field is less than the maximum value of the piezoelectric field strength as a function of the orientation. In devices having GaN-based semiconductor layers with a wurtzite crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {0001} direction of the wurtzite crystal structure. In devices having GaN-based semiconductor layers with a zincblende crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {111} direction of the zincblende crystal structure.

Abstract: A high damping material composition useful as a vibration damper and an acoustic insulating material such as a sound insulating wall for an acoustic room, a sound insulating partition for a construction structure and a soundproofing wall for a vehicle. The high damping material composition of the present invention containing the following components (A) and (B); (A) a polymer having in the molecular chain thereof a chemical structural unit derived from the following (a); (a) at least one selected from the group consisting of an acrylic monomer, a methacrylic monomer, an ethylene-acrylic copolymer, an ethylene-methacrylic copolymer and vinyl acetate; (B) at least one damping property imparting agent selected from the group consisting of a hindered phenol compound, a phosphite ester compound, a phosphate ester compound, a basic compound containing nitrogen and a hindered amine compound.

Abstract: A p-contact that comprises a contact layer of a p-type Group III-nitride semiconductor having an exposed surface and an electrode layer of palladium (Pd) located on the exposed surface of the contact layer. The p-contact is made by providing a p-type Group III-nitride semiconductor contact layer having an exposed surface, and depositing an electrode layer of palladium on the exposed surface of the contact layer. Preferably, the p-contact is annealed for a prolonged annealing time after the electrode layer is deposited, and the exposed surface of the contact layer is etched using hydrofluoric acid (HF) before depositing the electrode layer.

Abstract: An optical semiconductor device having a plurality of GaN-based semiconductor layers containing a strained quantum well layer in which the strained quantum well layer has a piezoelectric field that depends on the orientation of the strained quantum well layer when the quantum layer is grown. In the present invention, the strained quantum well layer is grown with an orientation at which the piezoelectric field is less than the maximum value of the piezoelectric field strength as a function of the orientation. In devices having GaN-based semiconductor layers with a wurtzite crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {0001} direction of the wurtzite crystal structure. In devices having GaN-based semiconductor layers with a zincblende crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {111} direction of the zincblende crystal structure.

Abstract: In a cooling system to cool down a hot object contained in a closed container, a heat exchanger is used in addition to an air-conditioner to share thermal load to dissipate heat generated by the hot object. Since the heat exchanger which requires almost no operating power shares heat load with the air-conditioner which consumes a high operating power, a total power consumption of the cooling system is considerably reduced. An evaporator and a condenser of the heat exchanger are separately installed in the cooling system, and both are connected by pipes through which refrigerant is circulated. The evaporator is placed to an optimum position to effectively absorb heat generated by the hot object. The condenser is installed outside the container to exhaust heat most effectively to outside air. The evaporator and the condenser may be combined before installation, if a whole structure of the cooling system permits.

Abstract: A plasma treating method subjects an object surface to a plasma treating within a chamber. First, first and second gasses are supplied into the chamber, where the first gas includes hydrogen molecules as a main component, the second gas includes a quantity of hydrogen less than that included in the first gas and is selected from a group of materials consisting of organic compounds and inorganic compounds, the organic compounds include hydrogen and oxygen and the inorganic compounds include hydrogen. Second, plasma of a mixed gas which is made up of the first and second gasses is generated within the chamber to subject the object surface to the plasma treating. Preferably, the second gas is water vapor.

Abstract: Disclosed are a gallium nitride type semiconductor device that has a single crystal of (Ga.sub.1-x Al.sub.x).sub.1-y In.sub.y N, which suppresses the occurrence of crystal defects and thus has very high crystallization and considerably excellent flatness, and a method of fabricating the same. The gallium nitride type semiconductor device comprises a silicon substrate, an intermediate layer consisting of a compound containing at least aluminum and nitrogen and formed on the silicon substrate, and a crystal layer of (Ga.sub.1-x Al.sub.x).sub.1-y In.sub.y N (0.ltoreq.x.gtoreq.1, 0.ltoreq.y.ltoreq.1, excluding the case of x=1 and y=0). According to the method of fabricating a gallium nitride base semiconductor device, a silicon single crystal substrate is kept at a temperature of 400.degree. to 1300.degree. C.

Abstract: A paper feed apparatus for a sheet-fed press includes a paper stack unit, a suction port member, a cam mechanism, and a paper feed roller and a paper feed roll. The paper stack unit stacks paper sheets on a paper stack plate thereof. The suction port member draws the leading end portion of the paper sheet stacked on the paper stack unit. The cam mechanism moves the suction port member vertically between a suction position and an upper position and back and forth between the suction position and a retreat position. The paper feed roller and the paper feed roll are disposed within the forward path of the suction port member, and draw the paper sheet conveyed by the suction port member and feed the paper sheet onto a feeder board.

Abstract: Disclosed are a gallium nitride type semiconductor device that has a single crystal of (Ga.sub.l-x Al.sub.x).sub.l-y In.sub.y N, which suppresses the occurrence of crystal defects and thus has very high crystallization and considerably excellent flatness, and a method of fabricating the same. The gallium nitride type semiconductor device comprises a silicon substrate, an intermediate layer consisting of a compound containing at least aluminum and nitrogen and formed on the silicon substrate, and a crystal layer of (Ga.sub.l-x Al.sub.x).sub.l-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, excluding the case of x=1 and y=0). According to the method of fabricating a gallium nitride base semiconductor device, a silicon single crystal substrate is kept at a temperature of 400 to 1300.degree. C.

Abstract: A verticality detecting apparatus for plumbing columns has a measuring section to be mounted on a lower end portion of an upper column, an upper target to be mounted on an upper end portion of the upper column and a lower target to be mounted on a lower end portion of a lower column joined to the lower end of the upper column. Inclinations of the measuring section about two orthogonal horizontal axes are adjustable and can be locked at adjusted inclinations. The measuring section consists of a sight telescope with a right angle prism opposed to its objective while placing an edge of the right angle on its optical axis perpendicular thereto, and an inclination sensor for detecting inclinations of the telescope-prism assembly about the two orthogonal horizontal axes.

Abstract: A new wound treatment agent which contains as an effective ingredient a fraction containing nucleoside phosphotransferase produced by a nucleoside phosphotransferase producing bacterium belonging to the genus Clostridium, solely or in combination with zinc oxide.