Abstract: In an embodiment, an object of the present invention is to provide a double-stranded nucleic acid complex having a novel structure. In an embodiment, the present invention relates to a nucleic acid complex comprising a first nucleic acid strand and a second nucleic acid strand, wherein said first nucleic acid strand: (1) is capable of hybridizing to at least a part of a target transcriptional product; (2) has an antisense effect on the target transcriptional product; and (3) is a gapmer comprising a central region, and a 5? wing region and a 3? wing region, said second nucleic acid strand comprises at least one sugar-unmodified central region (first exposed region) consisting of one sugar-unmodified ribonucleoside or two or three contiguous sugar-unmodified ribonucleosides linked by an internucleoside bond, which is or are complementary to a part of said first nucleic acid strand, and said first nucleic acid strand is annealed to said second nucleic acid strand.

Abstract: The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

Abstract: A toilet system includes: a toilet seat having a seat surface on which a user is to sit; a sensor provided in or on the toilet seat, configured to measure a physical quantity which reflects blood flow conditions of the user; a health index calculator configured to calculate a health index of the user based on measurement results of the sensor; a health index output part configured to output the health index of the user which has been calculated by the health index calculator; a temperature determining part configured to determine whether a temperature state of the seat surface satisfies a predetermined condition or not, and an operation change instruction part configured to change an operation of the health index calculator and/or an operation of the health index output part when the temperature determining part determines that the temperature state of the seat surface satisfies the predetermined condition.

Abstract: A toilet system includes: a toilet seat; a sensor configured to measure a physical quantity which reflects blood flow conditions of a user; a health index calculator configured to calculate a plurality of health indices based on measurement results of the sensor; a health index output part configured to output the plurality of health indices which has been calculated; a timer configured to measure a seating time; and a controller configured to control an output manner of the health index output part based on measurement results of the timer. When the seating time is not shorter than a first required time but shorter than a second required time, the first health index is outputted, but the second health index is stopped to be outputted. When the seating time is not shorter than the second required time, both the first health index and the second health index are outputted.

Abstract: The present technology relates to a solid-state imaging device capable of suppressing deterioration in dark characteristics, and an electronic apparatus. The present invention is provided with: a photoelectric conversion section that performs photoelectric conversion; a charge retaining section that temporarily retains electric charge converted by the photoelectric conversion section; and a first trench formed in a semiconductor substrate between the photoelectric conversion section and the charge retaining section, the first trench being higher than the photoelectric conversion section in a depth direction of the semiconductor substrate. Alternatively, the first trench is lower than the photoelectric conversion section and higher than the charge retaining section in the depth direction of the semiconductor substrate. The present technology can be applied to, for example, a back-illuminated CMOS image sensor.

Abstract: A solid-state imaging device includes: a light receiving surface; and a plurality of pixels that is disposed in a matrix at positions opposed to the light receiving surface. The respective pixels have different depths from the light receiving surface. Each of the pixels includes a plurality of photoelectric conversion sections and a plurality of electric charge holding sections one or more of which are provided for each of the plurality of photoelectric conversion sections. The photoelectric conversion sections each photoelectrically convert light coming through the light receiving surface. The electric charge holding sections each hold electric charge transferred from the corresponding photoelectric conversion section. Each of the pixels further includes a plurality of transfer transistors one or more of which are provided for each of the photoelectric conversion sections.

Abstract: A hygroscopicity evaluation method includes: a first step of preparing a first sample and a second sample; a second step of acquiring a first detection result for the first sample and a second detection result for the second sample by making a terahertz wave incident on each of the first and second samples; and a third step of evaluating the hygroscopicity of a measurement target object based on a first frequency characteristic calculated from the first detection result and a second frequency characteristic calculated from the second detection result. In the third step, the magnitude of the hygroscopicity of the measurement target object is evaluated based on the difference between the magnitude of a first peak of the first frequency characteristic in a reference frequency range and the magnitude of a second peak of the second frequency characteristic in the reference frequency range.

Abstract: The present technology relates to a solid-state imaging device capable of suppressing deterioration in dark characteristics, and an electronic apparatus. The present invention is provided with: a photoelectric conversion section that performs photoelectric conversion; a charge retaining section that temporarily retains electric charge converted by the photoelectric conversion section; and a first trench formed in a semiconductor substrate between the photoelectric conversion section and the charge retaining section, the first trench being higher than the photoelectric conversion section in a depth direction of the semiconductor substrate. Alternatively, the first trench is lower than the photoelectric conversion section and higher than the charge retaining section in the depth direction of the semiconductor substrate. The present technology can be applied to, for example, a back-illuminated CMOS image sensor.

Abstract: The present technology relates to an imaging element that can increase the degree of freedom of element arrangement. A photoelectric conversion unit, a through trench penetrating a semiconductor substrate in a depth direction and formed between pixels each including the photoelectric conversion unit, and a PN junction region in a side wall of the trench are included, and the through trench has an opening portion, and a P-type region is formed in the opening portion. A photoelectric conversion unit, a holding unit, a through trench formed between the photoelectric conversion unit and the holding unit, and a PN junction region in a side wall of the through trench are included, and the through trench has an opening portion and a readout gate for reading the charge from the photoelectric conversion unit is formed in the opening portion. The present technology can be applied to, for example, an imaging element.

Abstract: The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

Abstract: A solid-state imaging device includes a pixel array unit in which a plurality of imaging pixels configured to generate an image, and a plurality of phase difference detection pixels configured to perform phase difference detection are arranged, each of the plurality of phase difference detection pixels including a plurality of photoelectric conversion units, a plurality of floating diffusions configured to convert charges stored in the plurality of photoelectric conversion units into voltage, and a plurality of amplification transistors configured to amplify the converted voltage in the plurality of floating diffusions.

Abstract: A solid-state imaging device includes a pixel array unit in which a plurality of imaging pixels configured to generate an image, and a plurality of phase difference detection pixels configured to perform phase difference detection are arranged, each of the plurality of phase difference detection pixels including a plurality of photoelectric conversion units, a plurality of floating diffusions configured to convert charges stored in the plurality of photoelectric conversion units into voltage, and a plurality of amplification transistors configured to amplify the converted voltage in the plurality of floating diffusions.

Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

Abstract: A solid-state imaging element according to an embodiment of the present disclosure includes: a semiconductor substrate having a photoelectric converter for each of pixels; a pixel separation groove provided between the pixels, the pixel separation groove extending from one surface of the semiconductor substrate toward another surface of the semiconductor substrate that opposes the one surface; and a pixel coupling section provided between the pixels on the other surface of the semiconductor substrate.

Abstract: Disclosed is a vaccine for non-human animals, which vaccine enables effective immune induction in non-human animals such as livestock or poultry. The vaccine for non-human animals of the present invention comprises liposomes each comprising an antigen molecule(s) bound to the surface thereof, the antigen molecule(s) being derived from a pathogen infectious to the non-human animals. The non-human animals are, for example, livestock or poultry. One most preferred example of the vaccine according to the present invention is an infectious bronchitis virus (IBV) vaccine, which is effective against various isolated IBV strains, and which is expected to be sufficiently applicable even to cases where a mutant strain appeared. Another preferred example of the vaccine according to the present invention is a PRRSV vaccine, which was confirmed to have an effect that reduces fever, lung lesion development, and the like caused by the infection.

Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.