Patents by Inventor Thanh Vo

Thanh Vo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5703500
    Abstract: A buffer circuit (10). The buffer circuit (10) includes a first inverter (12) with a first current limiter (18) that limits the standby current used by the first inverter (12). Further, the buffer circuit (10) includes a second inverter (14) that is coupled to an output of the first inverter (12). The input buffer (10) converts a first logic level of an input signal provided to the first inverter (12) to a second logic level at an output of the second inverter (14). The buffer circuit (10) also includes a second current limiting circuit (16) that is coupled between the first and second inverters (12 and 14) to further limit the standby current in the buffer circuit (10).
    Type: Grant
    Filed: May 15, 1996
    Date of Patent: December 30, 1997
    Assignee: Micron Technology, Inc.
    Inventor: Huy Thanh Vo
  • Patent number: 5680595
    Abstract: A programmable multiconfiguration data port clocking system for use in asynchronous transfer mode communication (ATM) networks. The clocking system is programmed using a number of preselected configuration codes to automatically switch the clocking of the data port configuration of an ATM network chip. The clocking system incorporates an automatic disable circuit for eliminating random outputs from unused pins in the clocking hardware. The clocking system also employs a noise suppression circuit for reducing spurious noise into the ATM network.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: October 21, 1997
    Assignee: Micron Technology, Inc.
    Inventors: Mark Thomann, Huy Thanh Vo, Glen E. Hush
  • Patent number: 5663925
    Abstract: In a memory device such as a DRAM or multiport DRAM, each of a plurality of memory cells includes an access transistor with a gate connected to a word line and a storage capacitor with a storage node connected through the access transistor to a digit line. Data is transferred on the digit line to and from the storage capacitor when the word line is activated and the access transistor enabled thereby. According to the present invention, a timing control circuit is provided to control deactivation of the word line. The timing control circuit includes a digit-write/transfer model that simulates a read-write cycle in a DRAM or a serial write transfer operation in a multiport DRAM. The digit-write transfer model produces an output signal indicating the state of the modeled data transfer operation. The timing control circuit also includes a reference voltage circuit and a level comparator. The level comparator compares the model output signal to the reference voltage provided by the reference voltage circuit.
    Type: Grant
    Filed: December 18, 1995
    Date of Patent: September 2, 1997
    Assignee: Micron Technology, Inc.
    Inventor: Huy Thanh Vo