Patents by Inventor Thejas

Thejas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8434374
    Abstract: The present invention relates to a Sub-threshold Field Effect Transistor (SF-FET). The invention integrates a MEMS mechanical transducer along with the sensing mechanism in a single device. Forced mass is capacitively coupled onto the FET structure. Dielectric SiO2 forms good interface with underlying silicon substrate. Air dielectric forms second dielectric wherein effective gate capacitance is the series combination of the second dielectric capacitance and fixed dielectric. Inertial displacements are sensed by observing change in drain current (ID) of the sensor due to change in gap height (TGap) of the second dielectric of the sensor caused by forced mass.
    Type: Grant
    Filed: June 19, 2008
    Date of Patent: May 7, 2013
    Assignee: Indian Institute of Science
    Inventors: Navakanta Bhat, Rudra Pratap, Thejas
  • Publication number: 20110050201
    Abstract: The present invention relates to a Sub-threshold Field Effect Transistor (SF-FET). The invention integrates a MEMS mechanical transducer along with the sensing mechanism in a single device. Forced mass is capacitively coupled onto the FET structure. Dielectric SiO2 forms good interface with underlying silicon substrate. Air dielectric forms second dielectric wherein effective gate capacitance is the series combination of the second dielectric capacitance and fixed dielectric. Inertial displacements are sensed by observing change in drain current (ID) of the sensor due to change in gap height (T Gap) of the second dielectric of the sensor caused by forced mass.
    Type: Application
    Filed: June 19, 2008
    Publication date: March 3, 2011
    Applicant: INDIAN INSTITUTE OF SCIENCE
    Inventors: Navakanta Bhat, Rudra Pratap, Thejas