Abstract: A nanoelectromechanical (NEM) device and a method of making same employ a laterally extending nanowire. The nanowire is grown in place from a vertical side of a vertically extending support block that is provided on a horizontal surface of a substrate. The nanowire is spaced from the horizontal surface. The NEM device includes a component that is provided to influence the nanowire.

Abstract: An electronic device includes a primary nanowire of a first conductivity type, and a secondary nanowire of a second conductivity type extending outwardly from the primary nanowire. A doped region of the second conductivity type extends from the secondary nanowire into at least a portion of the primary nanowire.

Abstract: An optical apparatus includes a waveguide configured to propagate optical energy; an electrical contact surface; and a semiconductor electrical interconnect extending from a first surface of the optical waveguide to electrical communication with the electrical contact surface. The semiconductor electrical interconnect comprises a geometry configured to substantially confine the optical energy to the waveguide.

Abstract: An optical device includes at least two materials forming a structure with a graded bandgap where photocarriers are generated. A first of the at least two materials has a larger concentration at opposed ends of the graded bandgap structure than a concentration of the first of the at least two materials at an interior region of the graded bandgap structure. The second of the at least two materials has a larger concentration at the interior region of the graded bandgap structure than the concentration of the second of the at least two materials at the opposed ends of the graded bandgap structure.

Abstract: A structure includes a first amorphous layer and a second amorphous layer established on the first amorphous layer such that at least an edge of the first amorphous layer or the second amorphous having a predetermined geometry is exposed. A material having a controlled crystal orientation is selectively formed adjacent the exposed edge of the first amorphous layer or the second amorphous having the predetermined geometry.

Abstract: A nanowire-based device includes the pair of isolated electrodes and a nanowire bridging between respective surfaces of the isolated electrodes of the pair. Specifically, the nanowire-based device having isolated electrodes comprises: a substrate electrode having a crystal orientation; a ledge electrode that is an epitaxial semiconductor having the crystal orientation of the substrate electrode; and a nanowire bridging between respective surfaces of the substrate electrode and the ledge electrode.

Abstract: A sensor includes at least two electrodes, and at least one nanowire extending substantially laterally between the electrodes. The at least one nanowire has at least two segments with a junction or connection formed therebetween. A sensing material changeable between at least two states is positioned adjacent to the junction or connection, and adjacent to at least a portion of each of the segments.

Abstract: A nano-anemometer is formed by growing a nanowire to span an open area between a pair of electrodes. The nanowire is coupled to a sensing apparatus to form a hot-wire nano-anemometer.

Abstract: A nanowire device includes a nanowire formed between two surfaces, and a gap formed at a predetermined location in the nanowire.

Abstract: A NERS-active structure is disclosed that includes at least one heterostructure nanowire. The at least one heterostructure nanowire may include alternating segments of an NERS-inactive material and a NERS-active material in an axial direction. Alternatively, the alternating segments may be of an NERS-inactive material and a material capable of attracting nanoparticles of a NERS-active material. In yet another alternative, the heterostructure nanowire may include a core with alternating coatings of an NERS-inactive material and a NERS-active material in a radial direction. A NERS system is also disclosed that includes a NERS-active structure. Also disclosed are methods for forming a NERS-active structure and methods for performing NERS with NERS-active structures.

Abstract: A photonic connection includes a first fiber and a second fiber. The first fiber has a core with a first predetermined pattern defined on or in a facet thereof, and the second fiber has a core with a second predetermined pattern defined on or in a facet thereof. The second predetermined pattern is complementary to the first predetermined pattern such that the first fiber or the second fiber fits into another of the second fiber or the first fiber at a single orientation and position.

Abstract: A device disclosed herein includes a first layer, a second layer, and a first plurality of nanowires established between the first layer and the second layer. The first plurality of nanowires is formed of a first semiconductor material. The device further includes a third layer, and a second plurality of nanowires established between the second and third layers. The second plurality of nanowires is formed of a second semiconductor material having a bandgap that is the same as or different from a bandgap of the first semiconductor material.

Abstract: An optical modulator and related methods are described. In accordance with one embodiment, the optical modulator comprises a waveguide for guiding an optical signal, and further comprises a ring resonator disposed in evanescent communication with the waveguide for at least one predetermined wavelength of the optical signal. The optical modulator further comprises a semiconductor pnpn junction structure that is at least partially coextensive with at least a portion of a resonant light path of the ring resonator. The optical modulator is configured such that the semiconductor pnpn junction structure receives an electrical control signal thereacross. The electrical control signal controls a free carrier population in the resonant light path where coextensive with the pnpn junction structure. A resonance condition of the ring resonator at the predetermined wavelength is thereby controlled by the electrical control signal, and the optical signal is thereby modulated according to the electrical control signal.

Abstract: In one embodiment of a method of forming at least one through-substrate interconnect, a semiconductor substrate having first surface and an opposing second surface is provided. At least one opening is formed in the semiconductor substrate to extend from the first surface to an intermediate depth within the semiconductor substrate. The at least one opening is partially defined by a base. At least one metal-catalyst nanoparticle is provided on the base. Conductive material is deposited within the at least one opening under conditions in which the metal-catalyst nanoparticle promotes deposition of the conductive material. Material of the semiconductor substrate may be removed from the second surface to expose a portion of the conductive material filling the at least one opening. In another embodiment, instead of using the nanoparticle, the conductive material may be selected to selectively deposit on the base partially defining the at least one opening.

Abstract: A nanowire-based device and method employ removal of residual carriers. The nanowire-based device includes a semiconductor nanowire having a semiconductor junction, and a residual carrier sink. The residual carrier sink is located at or adjacent to the semiconductor nanowire near the semiconductor junction and employs one or both of enhanced recombination and direct extraction of the residual carriers. The method includes providing a semiconductor nanowire, forming a semiconductor junction within the semiconductor nanowire, forming a residual carrier sink, and removing residual carriers from the semiconductor junction region using the residual carrier sink.

Abstract: An apparatus comprising an integrated circuit having a plurality of devices each having device characteristics, and a waveguide structure coupled to the integrated circuit, wherein photons provided to the waveguide structure are directed to one or more devices of the plurality of devices and can alter the device characteristics of the device or devices.

Abstract: Methods of creating isolated electrodes and integrating a nanowire therebetween each employ lateral epitaxial overgrowth of a semiconductor material on a semiconductor layer to form isolated electrodes having the same crystal orientation. The methods include selective epitaxial growth of a semiconductor feature through a window in an insulating film on the semiconductor layer. A vertical stem is in contact with the semiconductor layer through the window and a ledge is a lateral epitaxial overgrowth of the vertical stem on the insulating film. The methods further include creating a pair of isolated electrodes from the semiconductor feature and the semiconductor layer. A nanowire-based device includes the pair of isolated electrodes and a nanowire bridging between respective surfaces of the isolated electrodes of the pair.

Abstract: A semiconductor device which has controlled optical absorption includes a substrate, and a semiconductor layer supported by the substrate. The semiconductor has variable optical absorption at a predetermined optical frequency in relationship to a bandgap of the semiconductor layer. Also included is a strain application structure coupled to the semiconductor layer to create a strain in the semiconductor layer to change the semiconductor bandgap.

Abstract: An optical apparatus includes a waveguide configured to propagate optical energy; an electrical contact surface; and a semiconductor electrical interconnect extending from a first surface of the optical waveguide to electrical communication with the electrical contact surface. The semiconductor electrical interconnect comprises a geometry configured to substantially confine the optical energy to the waveguide.

Abstract: A radiation-emitting device includes a nanowire that is structurally and electrically coupled to a first electrode and a second electrode. The nanowire includes a double-heterostructure semiconductor device configured to emit electromagnetic radiation when a voltage is applied between the electrodes. A device includes a nanowire having an active longitudinal segment selectively disposed at a predetermined location within a resonant cavity that is configured to resonate at least one wavelength of electromagnetic radiation emitted by the segment within a range extending from about 300 nanometers to about 2,000 nanometers. Active nanoparticles are precisely positioned in resonant cavities by growing segments of nanowires at known growth rates for selected amounts of time.