Abstract: A semiconductor nanowire is grown laterally. A method of growing the nanowire forms a vertical surface on a substrate, and activates the vertical surface with a nanoparticle catalyst. A method of laterally bridging the nanowire grows the nanowire from the activated vertical surface to connect to an opposite vertical surface on the substrate. A method of connecting electrodes of a semiconductor device grows the nanowire from an activated device electrode to an opposing device electrode. A method of bridging semiconductor nanowires grows nanowires between an electrode pair in opposing lateral directions. A method of self-assembling the nanowire bridges the nanowire between an activated electrode pair. A method of controlling nanowire growth forms a surface irregularity in the vertical surface. An electronic device includes a laterally grown nano-scale interconnection.

Abstract: Surface photovoltage is used for molecule sensing. The sensing is performed by exposing a surface of a semiconductor to molecules, and sensing a change in surface photovoltage of the semiconductor. Chemical and biological sensors may be based on such sensing.

Abstract: A field effect transistor having a narrow channel and a method for forming such a device. An upstanding nanopillar is formed from a substrate by directional etching of the substrate preferentially masked by a nanoparticle. A stack of planar layers of material is formed adjacent and around the nanopillar. The bottom layer, adjacent the substantially planar top substrate surface, comprises insulating material. A conductive gate layer overlies the bottom layer while a second insulating layer overlies the gate layer. The pillar material is etched to leave a nanopore into which semiconductor material is deposited, forming an upstanding channel, after insulating material has been deposited on the interior of the nanopore. The source or drain may be a conductive substrate or a doped region of the substrate formed immediately beneath the nanopillar with the other electrode formed by doping the region adjacent the top of the channel.