Abstract: Examples are disclosed for treating water received from one or more sources or treating water that has been stored in a storage container.

Abstract: Temperature regulation systems and methods for controlling the temperature of polishing pads used in planarizing micro-device workpieces are disclosed herein. In one embodiment, an apparatus for polishing a workpiece includes a platen defining a planarizing zone and a primary duct system. The platen can have a first duct, and the primary duct system can have a second duct operatively coupled to the first duct of the platen. The second duct is configured to direct a gas flow laterally relative to the planarizing zone. The apparatus also includes a pad support carried by the primary duct system, and a polishing pad carried by the pad support. The pad support can have a plurality of apertures that are in fluid communication with the gas flow in the second duct.

Abstract: Apparatus and methods for processing microfeature workpieces in a plasma reactor. One embodiment of a plasma reactor includes a reaction vessel, a workpiece holder in the reaction vessel, and a gas distributor in the reaction vessel aligned with the workpiece holder. The gas distributor includes a plurality of first ports and a plurality of second ports. Additionally, individual second ports surround an immediately adjacent one of the first ports. The apparatus can further include a feed line coupled to at least one of the first ports and the second ports, and an exhaust line coupled to at least the other of the first ports and the second ports.

Abstract: Processes for enhancing solubility and the reaction rates in supercritical fluids are provided. In preferred embodiments, such processes provide for the uniform and precise deposition of metal-containing films on semiconductor substrates as well as the uniform and precise removal of materials from such substrates. In one embodiment, the process includes, providing a supercritical fluid containing at least one reactant, the supercritical fluid being maintained at above its critical point, exposing at least a portion of the surface of the semiconductor substrate to the supercritical fluid, applying acoustic energy, and reacting the at least one reactant to cause a change in at least a portion of the surface of the semiconductor substrate.

Abstract: The invention includes a method of forming spaced conductive regions. A construction is formed which includes a first electrically conductive material over a semiconductor substrate. The construction also includes openings extending through the first electrically conductive material and into the semiconductor substrate. A second electrically conductive material is formed within the openings and over the first electrically conductive material and is in electrical contact with the first electrically conductive material. The second electrically conductive material is subjected to anodic dissolution while the first electrically conductive material is electrically connected to a power source.

Abstract: Conditioning apparatuses and methods for conditioning polishing pads used for mechanical and/or chemical-mechanical planarization of micro-device workpieces are disclosed herein. In one embodiment, a method for conditioning a polishing pad used for polishing a micro-device workpiece includes monitoring surface condition in a first region of the polishing pad and adjusting at least one of a rotational velocity of the polishing pad, a downforce on the polishing pad, and a sweep velocity of the end effector in response to the monitored surface condition to provide a desired texture in the first region. In another embodiment, an apparatus for conditioning the polishing pad includes an end effector, a monitoring device, and a controller operatively coupled to the end effector and the monitoring device. The controller has a computer-readable medium containing instructions to perform a conditioning method, such as the above-mentioned method.

Abstract: Systems and methods for beveling microfeature workpiece edges are disclosed. A system in accordance with one embodiment is configured to remove material from a microfeature workpiece having a first face, a second face facing opposite from the first face, an edge surface between the first and second faces, and an edge at a juncture between the edge surface and one of the first and second faces. The system can include a carrier positioned to carry the workpiece with the first and second faces generally normal to an axis, and a first polishing pad having a support surface and a polishing surface facing generally away from the support surface. The polishing surface can have a first shape with at least one portion oriented at an acute angle relative to the axis and the support surface to remove material from the edge of the workpiece.

Abstract: Systems and methods for beveling microfeature workpiece edges are disclosed. A system in accordance with one embodiment is configured to remove material from a microfeature workpiece having a first face, a second face facing opposite from the first face, an edge surface between the first and second faces, and an edge at a juncture between the edge surface and one of the first and second faces. The system can include a carrier positioned to carry the workpiece with the first and second faces generally normal to an axis, and a first polishing pad having a support surface and a polishing surface facing generally away from the support surface. The polishing surface can have a first shape with at least one portion oriented at an acute angle relative to the axis and the support surface to remove material from the edge of the workpiece.

Abstract: A subpad support for use in a web format or belt format polishing apparatus for polishing one or more layers of semiconductor device structures. The subpad support includes a subpad retention element for non-adhesively securing the subpad thereto. The subpad support may also include one or more lips protruding therefrom so as to at least substantially inhibit lateral movement of the subpad relative to the subpad support. Polishing apparatus including the subpad support are also disclosed. The polishing pads of such polishing apparatus may be at least partially moved away from the subpad or subpad support so as to facilitate assembly of a subpad with the subpad support or removal of the subpad from the subpad support without damaging the polishing pad. Methods of removably securing a subpad to the subpad support, removing the subpad from the subpad support, and replacing another subpad on the subpad support, as well as polishing methods, are also disclosed.

Abstract: Conditioning devices, systems and methods for conditioning a contact surface of a processing pad used in processing microelectronic workpieces. One embodiment of a conditioning device comprises an end-effector having a conditioning surface configured to engage the contact surface of the processing pad and a plurality of microstructures on the conditioning surface. The microstructures can be arranged in a pattern corresponding to a desired pattern of microfeatures on the contact surface of the processing pad. In several embodiments, the microstructures are raised elements projecting from the conditioning surface and/or depressions in the conditioning surface. The condition surface can also be smooth. The conditioning device can also include a heater coupled to the end-effector for heating the processing pad.

Abstract: Systems and methods for beveling microfeature workpiece edges are disclosed. A system in accordance with one embodiment is configured to remove material from a microfeature workpiece having a first face, a second face facing opposite from the first face, an edge surface between the first and second faces, and an edge at a juncture between the edge surface and one of the first and second faces. The system can include a carrier positioned to carry the workpiece with the first and second faces generally normal to an axis, and a first polishing pad having a support surface and a polishing surface facing generally away from the support surface. The polishing surface can have a first shape with at least one portion oriented at an acute angle relative to the axis and the support surface to remove material from the edge of the workpiece.

Abstract: Planarizing machines and methods for accurately planarizing microelectronic workpieces. Several embodiments of the planarizing machines produce a planar surface at a desired endpoint in the microelectronic workpieces by (a) quickly reducing variances on the surface of the workpiece using a planarizing medium that removes topographical features but has a low polishing rate on planar surfaces; and (b) subsequently planarizing the wafer on a planarizing medium that has a higher polishing rate on planar surfaces than the first polishing medium.

Abstract: Retaining rings, planarizing apparatuses including retaining rings, and methods for mechanical and/or chemical-mechanical planarization of micro-device workpieces are disclosed herein. In one embodiment, a carrier head for retaining a micro-device workpiece during mechanical or chemical-mechanical polishing includes a workpiece holder configured to receive the workpiece and a retaining ring carried by the workpiece holder. The retaining ring includes an inner surface, an outer surface, a first surface between the inner surface and the outer surface, and a plurality of grooves in the first surface extending from the inner surface to the outer surface. The grooves include at least a first groove and a second groove positioned adjacent and at least substantially transverse to the first groove.

Abstract: A planarizing slurry for mechanical and/or chemical-mechanical polishing of microfeature workpieces. In one embodiment, the planarizing slurry comprises a liquid solution and a plurality of abrasive elements mixed in the liquid solution. The abrasive elements comprise a matrix material having a first hardness and a plurality of abrasive particles at least partially surrounded by the matrix material. The abrasive particles can have a second hardness independent of the first hardness of the matrix material. The second hardness, for example, can be greater than the first hardness. The matrix material can be formed into a core having an exterior surface and an interior. Because the abrasive particles are at least partially surrounded by the matrix material, the abrasive particles are at least partially embedded into the interior of the core.

Abstract: Conditioning devices, systems and methods for conditioning a contact surface of a processing pad used in processing microelectronic workpieces. One embodiment of a conditioning device comprises an end-effector having a conditioning surface configured to engage the contact surface of the processing pad and a plurality of microstructures on the conditioning surface. The microstructures can be arranged in a pattern corresponding to a desired pattern of microfeatures on the contact surface of the processing pad. In several embodiments, the microstructures are raised elements projecting from the conditioning surface and/or depressions in the conditioning surface. The condition surface can also be smooth. The conditioning device can also include a heater coupled to the end-effector for heating the processing pad.

Abstract: Microelectronic devices including a layer of germanium and selenium, optionally including up to 10 atomic percent silver, show promise for select applications. Manufacturing microelectronic devices containing such layers using conventional CMP processes presents some significant challenges. Embodiments of the invention provide methods of planarizing workpieces with Ge—Se layers, many of which can be carried out using conventional CMP equipment. Other embodiments of the invention provide chemical-mechanical polishing systems adapted to produce planarized workpieces with Ge—Se layers or, in at least one embodiment, other alternative layers. Various approaches suggested herein facilitate production of such microelectronic devices by appropriate control of the down force of the Ge—Se layer against the planarizing medium and/or one or more aspects of the planarizing medium, which aspects include pH, abrasive particle size, abrasive particle hardness, weight percent of abrasive.

Abstract: Conditioning devices, systems and methods for conditioning a contact surface of a processing pad used in processing microelectronic workpieces. One embodiment of a conditioning device comprises an end-effector having a conditioning surface configured to engage the contact surface of the processing pad and a plurality of microstructures on the conditioning surface. The microstructures can be arranged in a pattern corresponding to a desired pattern of microfeatures on the contact surface of the processing pad. In several embodiments, the microstructures are raised elements projecting from the conditioning surface and/or depressions in the conditioning surface. The condition surface can also be smooth. The conditioning device can also include a heater coupled to the end-effector for heating the processing pad.

Abstract: A buried transistor particularly suitable for SOI technology, where the transistor is fabricated within a trench in a substrate and the resulting transistor incorporates completely isolated active areas. The resulting substrate has a decreased topography and there is no need for polysilicon (or other) plugs to connect to the transistor, unless desired. With this invention, better control is achieved in processing, particularly of gate length. The substrate having the buried transistor can be silicon oxide bonded to another substrate to form an SOI structure.

Abstract: The invention includes a method of forming spaced conductive regions. A construction is formed which includes a first electrically conductive material over a semiconductor substrate. The construction also includes openings extending through the first electrically conductive material and into the semiconductor substrate. A second electrically conductive material is formed within the openings and over the first electrically conductive material and is in electrical contact with the first electrically conductive material. The second electrically conductive material is subjected to anodic dissolution while the first electrically conductive material is electrically connected to a power source.

Abstract: A planarizing slurry for mechanical and/or chemical-mechanical polishing of microfeature workpieces. In one embodiment, the planarizing slurry comprises a liquid solution and a plurality of abrasive elements mixed in the liquid solution. The abrasive elements comprise a matrix material having a first hardness and a plurality of abrasive particles at least partially surrounded by the matrix material. The abrasive particles can have a second hardness independent of the first hardness of the matrix material. The second hardness, for example, can be greater than the first hardness. The matrix material can be formed into a core having an exterior surface and an interior. Because the abrasive particles are at least partially surrounded by the matrix material, the abrasive particles are at least partially embedded into the interior of the core.