Abstract: A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.

Abstract: A process for fabricating a substrate for a radiofrequency device by joining a piezoelectric layer to a carrier substrate by way of an electrically insulating layer, the piezoelectric layer having a rough surface at its interface with the electrically insulating layer, the process being characterized in that it comprises the following steps: —providing a piezoelectric substrate having a rough surface for reflecting a radiofrequency wave, —depositing a dielectric layer on the rough surface of the piezoelectric substrate, —providing a carrier substrate, —depositing a photo-polymerizable adhesive layer on the carrier substrate, —bonding the piezoelectric substrate to the carrier substrate by way of the dielectric layer and of the adhesive layer, in order to form an assembled substrate, —irradiating the assembled substrate with a light flux in order to polymerize the adhesive layer, the adhesive layer and the dielectric layer together forming the electrically insulating layer.

Abstract: A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

Abstract: A process for manufacturing a piezoelectric structure for a radiofrequency device comprises providing a substrate of piezoelectric material, providing a carrier substrate, providing a dielectric bonding layer on the substrate of piezoelectric material, a step of joining the substrate of piezoelectric material to the carrier substrate via the dielectric bonding layer, and a thinning step for forming the piezoelectric structure, which comprises a layer of piezoelectric material joined to a carrier substrate via the dielectric bonding layer.

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

Abstract: A method for manufacturing a substrate for a radiofrequency filter by joining a piezoelectric layer to a carrier substrate via an electrically insulating layer, wherein the method comprises depositing the electrically insulating layer by spin coating an oxide belonging to the family of SOGs (spin-on glasses) on the surface of the piezoelectric layer to be joined to the carrier substrate, followed by an anneal for densifying the electrically insulating layer before joining the piezoelectric layer to the carrier substrate via the electrically insulating layer.

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

Abstract: A process for fabricating a substrate for a radiofrequency device by joining a piezoelectric layer to a carrier substrate by way of an electrically insulating layer, the piezoelectric layer having a rough surface at its interface with the electrically insulating layer, the process being characterized in that it comprises the following steps: —providing a piezoelectric substrate having a rough surface for reflecting a radiofrequency wave, —depositing a dielectric layer on the rough surface of the piezoelectric substrate, —providing a carrier substrate, —depositing a photo-polymerizable adhesive layer on the carrier substrate, —bonding the piezoelectric substrate to the carrier substrate by way of the dielectric layer and of the adhesive layer, in order to form an assembled substrate, —irradiating the assembled substrate with a light flux in order to polymerize the adhesive layer, the adhesive layer and the dielectric layer together forming the electrically insulating layer.

Abstract: A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.

Abstract: A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

Abstract: A method for transferring a piezoelectric layer onto a support substrate comprises:—providing a donor substrate including a heterostructure comprising a piezoelectric substrate bonded to a handling substrate, and a polymerized adhesive layer at the interface between the piezoelectric substrate and the handling substrate,—forming a weakened zone in the piezoelectric substrate, so as to delimit the piezoelectric layer to be transferred,—providing the support substrate,—forming a dielectric layer on a main face of the support substrate and/or of the piezoelectric substrate,—bonding the donor substrate to the support substrate, the dielectric layer being at the bonding interface, and—fracturing and separating the donor substrate along the weakened zone at a temperature below or equal to 300° C.

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

Abstract: A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

Abstract: The present disclosure relates to a method for reducing metal contamination on a surface of a substrate. The method involves plasma treatment of the surface of the substrate by ion bombardment, wherein a plasma of a supplied gas is generated, and a bombardment energy of the ions in the plasma is controlled by a radio frequency electromagnetic field. The bombardment energy of the ions is higher than a first threshold so as to tear the metal contamination from the surface of the substrate, and the bombardment energy of the ions is lower than a second threshold so as to prevent a surface quality degradation of the surface of the substrate.

Abstract: The present disclosure relates to a method for reducing metal contamination on a surface of a substrate. The method involves plasma treatment of the surface of the substrate by ion bombardment, wherein a plasma of a supplied gas is generated, and a bombardment energy of the ions in the plasma is controlled by a radio frequency electromagnetic field. The bombardment energy of the ions is higher than a first threshold so as to tear the metal contamination from the surface of the substrate, and the bombardment energy of the ions is lower than a second threshold so as to prevent a surface quality degradation of the substrate surface.

Abstract: The invention relates to a process of bonding by molecular adhesion of two layers, such as wafers of semiconductor material, wherein propagation of a first bonding wave is initiated from a pressure point applied to at least one of the two layers, and wherein the first bonding wave step is followed by propagating a second bonding wave over an area, for example, in the vicinity of the pressure point. Propagation of the second bonding wave may be obtained through the interposing of a separation element between the two wafers and the withdrawal of the element, for example, after the beginning of the first bonding wave propagation.