Abstract: The present invention is directed to a nonvolatile memory device including a plurality of memory slices, each memory slice including one or more memory sectors and a read circuit for sensing the resistance state of a magnetic memory cell in the memory sectors. The read circuit includes a first input node through which a reference current passes; a second input node through which a read current from the memory sectors passes; a sense amplifier configured to compare input voltages and having first and second input terminals; a reference resistor connected to the first input node at one end and the first input terminal at the other end; a variable current source connected to the reference resistor at one end and ground at the other end; and a second current source connected to the second input node at one end and ground at the other end.

Abstract: The present invention is directed to a nonvolatile memory device including a plurality of memory slices, each memory slice including one or more memory sectors and a read circuit for sensing the resistance state of a magnetic memory cell in the memory sectors. The read circuit includes a first input node through which a reference current passes; a second input node through which a read current from the memory sectors passes; a sense amplifier configured to compare input voltages and having first and second input terminals; a reference resistor connected to the first input node at one end and the first input terminal at the other end; a variable current source connected to the reference resistor at one end and ground at the other end; and a second current source connected to the second input node at one end and ground at the other end.

Abstract: An orthogonal or multi-dimensional fabric user interface is described herein. A remote server executes an operating system that provides a multi-dimensional fabric for storing content for a particular user. The user can access select content by manipulating the multi-dimensional fabric through a graphical user interface displayed on a display device. In this way, the user experiences and manipulates various data dimensions around the specific content they are accessing, rather than selecting a particular file structure location.

Abstract: The present invention is directed to a nonvolatile memory device that includes a plurality of memory slices, each memory slice including one or more memory sectors and a read circuit for sensing the resistance state of a magnetic memory cell in the memory sectors. The read circuit includes first and second input nodes; a sense amplifier having first and second input terminals; a first target resistor and a balancing resistor connected in series between the first input node and the first input terminal; a multiplexer having a first input, a second input, and an output, with the first input being connected to the second input node and the output being connected to the second input terminal; a second target resistor and an offset resistor connected in series between the second input node and the second input; and first and second current sources connected to the first and second input terminals, respectively.

Abstract: Utilization of a selection ring to select icons is provided herein. The selection ring is presented in a first graphical user interface. In response to receiving a first selection of the selection ring by a user, a plurality of icons are presented in the first graphical user interface. User manipulation of a position of the selection ring within the first graphical user interface is received, where that manipulation occurs without altering a location of the plurality of icons being presented within the first graphical user interface. In response to receiving a second selection associated with the selection ring, an icon from the plurality of icons is selected based on the position of the selection ring within the first graphical user interface. A second graphical user interface is then presented to the user based on the selected icon.

Abstract: A fluid timeline social network is provided herein. The fluid timeline social network includes a story database, an image database and a fluid timeline social network application, hosted at least partially on a server computer including a processor and a computer-readable storage medium. The fluid timeline social network application is configured to receive from a user computer device a created story, the created story including at least one of textual information and image information; receive from the user computer device a user-specified date to be associated with the created story; associate the created story with the user-specified date; associate the created story with an actual time and date that the created story is received by the fluid timeline social network application; and provide the story to the story database for storage.

Abstract: A method for real-time multiparty communications across a social network organized according to a fluid timeline is taught. In the method, a user accesses the social network. The user views a story posted by a first user and favorably reacted to by a second user. The user also likes the story, so the user favorably reacts to the posted story. Since a threshold number of users have favorably reacted to the posted story, a collective network group messaging feature is made available. The user accesses the feature participates in real time in a collective network group messaging session in a virtual room with at least one other user.

Abstract: A fluid timeline social network is provided herein. The fluid timeline social network includes a story database, an image database and a fluid timeline social network application, hosted at least partially on a server computer including a processor and a computer-readable storage medium. The fluid timeline social network application is configured to receive from a user computer device a created story, the created story including at least one of textual information and image information; receive from the user computer device a user-specified date to be associated with the created story; associate the created story with the user-specified date; associate the created story with an actual time and date that the created story is received by the fluid timeline social network application; and provide the story to the story database for storage.

Abstract: The present invention is directed a method for programming multiple memory cells connected to a common word line to different resistance regimes. Each cell includes a bipolar switching memory element and an access transistor coupled in series between first and second conductive lines. The memory element and access transistor are disposed adjacent to the first and second conductive lines, respectively. The method includes the steps of applying a first voltage to the common word line to program a first group of memory cells to a first resistance regime; and after the first group of memory cells is programmed to the first resistance regime, programming a second group of memory cells to a second resistance regime by raising the potential of second conductive lines connected to the first group of memory cells to a second voltage and raising the first voltage of the common word line to a third voltage.

Abstract: A fluid timeline social network is provided herein. The fluid timeline social network includes a story database, an image database and a fluid timeline social network application, hosted at least partially on a server computer including a processor and a computer-readable storage medium. The fluid timeline social network application is configured to receive from a user computer device a created story, the created story including at least one of textual information and image information; receive from the user computer device a user-specified date to be associated with the created story; associate the created story with the user-specified date; associate the created story with an actual time and date that the created story is received by the fluid timeline social network application; and provide the story to the story database for storage.

Abstract: A fluid timeline social network is provided herein. The fluid timeline social network includes a story database, an image database and a fluid timeline social network application, hosted at least partially on a server computer including a processor and a computer-readable storage medium. The fluid timeline social network application is configured to receive from a user computer device a created story, the created story including at least one of textual information and image information; receive from the user computer device a user-specified date to be associated with the created story; associate the created story with the user-specified date; associate the created story with an actual time and date that the created story is received by the fluid timeline social network application; and provide the story to the story database for storage.

Abstract: The present invention is directed a method for programming multiple memory cells connected to a common word line to different resistance regimes. Each cell includes a bipolar switching memory element and an access transistor coupled in series between first and second conductive lines. The memory element and access transistor are disposed adjacent to the first and second conductive lines, respectively. The method includes the steps of applying a first voltage to the common word line to program a first group of memory cells to a first resistance regime; and after the first group of memory cells is programmed to the first resistance regime, programming a second group of memory cells to a second resistance regime by raising the potential of second conductive lines connected to the first group of memory cells to a second voltage and raising the first voltage of the common word line to a third voltage.

Abstract: A fluid timeline social network is provided herein. The fluid timeline social network includes a story database, an image database and a fluid timeline social network application, hosted at least partially on a server computer including a processor and a computer-readable storage medium. The fluid timeline social network application is configured to receive from a user computer device a created story, the created story including at least one of textual information and image information; receive from the user computer device a user-specified date to be associated with the created story; associate the created story with the user-specified date; associate the created story with an actual time and date that the created story is received by the fluid timeline social network application; and provide the story to the story database for storage.

Abstract: A fluid timeline social network is provided herein. The fluid timeline social network includes a story database, an image database and a fluid timeline social network application, hosted at least partially on a server computer including a processor and a computer-readable storage medium. The fluid timeline social network application is configured to receive from a user computer device a created story, the created story including at least one of textual information and image information; receive from the user computer device a user-specified date to be associated with the created story; associate the created story with the user-specified date; associate the created story with an actual time and date that the created story is received by the fluid timeline social network application; and provide the story to the story database for storage.

Abstract: A method can include storing a plurality of addresses within one cycle of a timing clock, each address corresponding to a storage location of a memory device; and following the one cycle, accessing a plurality of banks of the memory device in response to the stored addresses corresponding to different banks and preventing access to any one of the plurality of banks by more than one address of the one cycle; wherein each bank includes memory cells arranged into rows and columns that comprise the storage locations.

Abstract: An integrated circuit (IC) device can include a memory array section comprising a plurality of memory arrays that each include memory cells for storing data values; a data path section having switching circuits configured to enable data paths between the memory arrays and a plurality of input/outputs (I/Os) of the IC device; and a power fill control circuit configured to activate power-fill circuits in the IC device to perform non-mission mode operations that consume current, the amount of non-mission mode operations varying in response to mission mode circuit activity in the IC device; wherein mission mode circuit activity includes circuit activity resulting from a user input to the IC device.

Abstract: A method can include storing a plurality of addresses within one cycle of a timing clock, each address corresponding to a storage location of a memory device; and following the one cycle, accessing a plurality of banks of the memory device in response to the stored addresses corresponding to different banks and preventing access to any one of the plurality of banks by more than one address of the one cycle; wherein each bank includes memory cells arranged into rows and columns that comprise the storage locations.

Abstract: A memory device can include a memory array section; a write first-in-first-out circuit (FIFO) configured to transfer write data to the memory array portion; at least one store circuit configured to store a copy of at least a portion of the write data stored in the write FIFO; and an address compare section configured to store write addresses corresponding to the write data of the forwarding circuit.

Abstract: A method can include storing bank addresses, if received, on at least rising and falling edges of a same clock cycle; and if addresses stored on the rising and falling edges of the same clock cycle correspond to different banks of a memory device, starting accesses to both banks after the falling edge of the clock cycle; wherein any of the banks can be accessed in response to an address stored on a rising edge of a next clock cycle. Devices and additional methods are also disclosed.

Abstract: A memory device can include first sense amplifiers coupled to bit lines of a memory array in a first access period and de-coupled from the bit lines in a first sense period, the first sense amplifiers configured to amplify data signals from the memory array in the first sense period; and second sense amplifiers coupled to the bit lines in a second access period that follows the first access period and configured to amplify data signals from the memory cell array in a second sense period that overlaps the first sense period.