Abstract: A method can include storing bank addresses, if received, on at least rising and falling edges of a same clock cycle; and if addresses stored on the rising and falling edges of the same clock cycle correspond to different banks of a memory device, starting accesses to both banks after the falling edge of the clock cycle; wherein any of the banks can be accessed in response to an address stored on a rising edge of a next clock cycle. Devices and additional methods are also disclosed.

Abstract: A memory device can include a data path that includes a first-in-first-out circuit (FIFO) to transfer data according to a latency between at least one memory cell array and signal connections of the memory device, the latency corresponding to a number of cycles of a periodic clock; and a self-timed section configured to transfer data independent of the clock. In addition or alternatively, a memory device can include at least one memory cell array; and a FIFO configured to transfer data between at least one memory cell array and other portions of the memory device according to a periodic clock signal, FIFO introducing a latency into the data according to a control signal generated in response to an access command. Methods corresponding to the above devices and operations are also disclosed.

Abstract: A serial interface device includes multiple serial link connections that receive at least address values and at least one error detection code (EDC) on different serial link connections, the EDC generated from at least the address values, the serial link connections for the address values and EDC operated separately from one another; and multiple output serial links, at least a first one of the output serial links outputting data values read from memory locations corresponding to the address values, and at least a second one of the output serial links different from and operated separately from the first one outputting EDC values generated for the data values read from the memory locations.

Abstract: A method of accessing a memory device multiple times in a same time period can include, in a first sequence of accesses, starting an access operation to one of a plurality of banks in synchronism with a first part of a first clock cycle and starting an access operation to another of the plurality of banks in synchronism with a second part of the first clock cycle, each bank having separate access circuits; and the time between consecutive accesses is faster than an access speed for back-to-back accesses to a same one of the banks; wherein during the access operations, storage locations of each bank are accessed in a same time period.

Abstract: A memory device and method may include separating alternating read and write accesses to different banks of a memory device.

Abstract: A method of accessing a memory device multiple times in a same time period can include, in a first sequence of accesses, starting an access operation to one of a plurality of banks in synchronism with a first part of a first clock cycle and starting an access operation to another of the plurality of banks in synchronism with a second part of the first clock cycle, each bank having separate access circuits; and the time between consecutive accesses is faster than an access speed for back-to-back accesses to a same one of the banks; wherein during the access operations, storage locations of each bank are accessed in a same time period

Abstract: In an embodiment, an apparatus includes a memory controller configured to control first and second memory components. A point-to-point data bus configured to pass data between the memory controller and the memory components may include a direct connection from each memory component to the memory controller. A daisy chained address bus configured to pass commands between the memory controller and the memory components may include a direct connection from the first memory component to the memory controller and a daisy chain connection from the first memory component to the second memory component.

Abstract: An integrated circuit may include at least a first replica driver stage coupled between a reference impedance input and a first power supply node and having a first programmable driver impedance set by a first driver configuration value in the same manner as a first output driver section of the integrated circuit. At least a first replica input termination stage may be coupled between the reference impedance input and the first power supply node and having a first programmable termination impedance set by a first termination configuration value in the same manner as a first input termination section of the integrated circuit. An impedance programming circuit may generate at least the first driver configuration value and the first termination configuration value in response to a potential at the reference node.

Abstract: A serial interface device may include a plurality of serial link connections that receive at least address values and at least one error detection code (EDC) on different serial link connections, the EDC generated from at least the address values.

Abstract: Embodiments of the invention relate to the testing and reduction of read disturb failures in a memory, e.g., an array of SRAM cells. A read disturb test mode may be added during wafer sort to identify any marginal memory cells that may fail read disturb, thus minimizing yield loss. The read disturb test mode may include first writing data to the memory. After a predetermined time period, the read disturb test mode reads data from the same memory, and compares the read data with the data previously written to the memory. A repair signal may be generated, when the read data is different from the data previously written to the memory. Additionally, a system may be implemented to reduce read disturb failures in the memory. The system may include a match logic circuit and a data selecting circuit. When a match condition is satisfied, data is read from a register that stores the previous written data, instead of from the memory. The match logic circuit may be selectively enabled or disabled.

Abstract: A memory device and method may include separating alternating read and write accesses to different banks of a memory device.

Abstract: In an embodiment, an apparatus includes a memory controller configured to control first and second memory components. A point-to-point data bus configured to pass data between the memory controller and the memory components may include a direct connection from each memory component to the memory controller. A daisy chained address bus configured to pass commands between the memory controller and the memory components may include a direct connection from the first memory component to the memory controller and a daisy chain connection from the first memory component to the second memory component.

Abstract: Disclosed is an accumulation memory circuit for providing a fast read, modify, and write operation in a single clock cycle time. The memory circuit is configured to read data stored in the memory device at an address. The memory circuit includes a reconfigurable adder unit generating read, accumulate and write output in a single clock cycle. The memory circuit is further configured to minimize data overflow. A high speed accumulation method comprises resetting a memory circuit; reading from an address of the memory circuit; performing internal addition within the memory circuit and rewriting into the address of the memory circuit in a single clock cycle.

Abstract: An apparatus and method for reducing the number of package pins in a chip package which must be budgeted for test purposes. In one embodiment, the invention achieves this by housing test balls in the depopulated center of a package ball array. The test balls are used to test a chip package prior to connection with a printed wiring board (PWB)/printed circuit board (PCB). After tests are completed, and when the chip package is connected to a PWB/PCB, the test balls may be left electrically isolated and unconnected. In another embodiment, the test balls are located in previously unused interstitial sites in a package ball array.

Abstract: Data paths (100 and 900) can be configured to accommodate two or four burst data sequences, with a data value being input/output each half clock cycle. A data sequence can be a fixed order or user-defined order depending upon a selected option. A data input path (100) can reduce power consumption with an enable signal (dinen) timed to activate after data input lines have settled values. A data output path (900) can access output data in a parallel fashion for subsequent output according to a burst sequence. Cycle latencies for such output data can include one clock cycle latency or one and a half-clock cycles. A data output path (900) can also accommodate various clocking modes, including: single clocking with a delay locked loop (DLL) type circuit enabled, single clocking with a delay locked loop (DLL) type circuit disabled, and double clocking, with a phase difference between an input clock and output clock of up to 180°.

Abstract: An integrated circuit may include at least a first replica driver stage coupled between a reference impedance input and a first power supply node and having a first programmable driver impedance set by a first driver configuration value in the same manner as a first output driver section of the integrated circuit. At least a first replica input termination stage may be coupled between the reference impedance input and the first power supply node and having a first programmable termination impedance set by a first termination configuration value in the same manner as a first input termination section of the integrated circuit. An impedance programming circuit may generate at least the first driver configuration value and the first termination configuration value in response to a potential at the reference node.

Abstract: Synchronous SRAM may conform to Std. Sync or early-write at an external interface whilst providing late-write internally.

Abstract: An integrated circuit device (200) can include a main portion (204) and a built-in self-test (BIST) portion (204) having outputs coupled to physical input structures (e.g., bond pads) (206) of the integrated circuit device (200). A BIST portion (202) can test timing critical parameters that take into account the effect of input structures (206). A BIST portion (202) can apply BIST test signals with a pipeline structure that can emulate timing parameters, such as a set-up time (Ts) and a clock-to-output time (Tco).

Abstract: A memory device can include a group of memory cells, which can be arranged in a column (100) that receives power by way of a first cell supply nodes (106-0 to 106-m). A current limiter (110) can be situated between first cell supply nodes (106-0 to 106-m) and a power supply (VH), and limit a current (llimit) to less than a latch-up holding current (lhold_lu) for the group of memory cells (100). In a particle event, such as an ?-particle strike, a current limiter (110) can prevent a latch-up holding current (lhold_lu) from developing, thus preventing latch-up from occurring. Current limiter (110) can include p-channel transistors and/or resistors, and thus consume a relatively small area of the memory device.

Abstract: A memory interface system and method are provided for transferring data between a memory controller and an array of storage elements. The storage elements are preferably SRAM elements, and the memory interface is preferably one having separate address bus paths and separate data bus paths. One address bus path is reserved for receiving read addresses and the other address bus path is reserved for receiving write addresses. One of the data bus paths is reserved for receiving read data from the array, and the other data bus path is reserved for receiving data written to the array. While bifurcating the address and data bus paths within the interface is transparent to the memory controller, the separate paths afford addressing phases of a read and write address operation to be partially overlapped, as well as the data transfer phases.