Abstract: A handheld device for treating air to a user includes an airflow path having an illumination chamber with a reflective surface, wherein the reflective surface is sufficiently reflective and configured to impart multiple reflections of at least a portion of the light introduced into the illumination chamber. The introduced light is produced by an onboard UV light generator, wherein the UV light generator can be cycled corresponding to at least one of a pressure and an airflow in the airflow path.

Abstract: An air flow system for reducing pathogens in a breathable airstream in an environment has a device having an airstream intake for receiving a volume of untreated air located in a first position, an airstream outlet for expelling a volume of treated air, the airstream outlet located in a second position extending above the first position, a flow path extending between the airstream intake and the airstream outlet, at least one of a UV generator and a UV-C emitter optically coupled to the flow path, a power source operably connected to the one of the at least one of the UV generator and the UV emitter, and a pressure generator fluidly connected to the airstream intake, the pressure generator configured to impart a flow from the airstream intake to the airstream outlet, wherein the pressure generator can be at least one of a force of flow from in line pressurized source or provided by a fan within the housing, and wherein a portion of the flow path includes a UV-C highly reflective surface.

Abstract: An air flow system for reducing pathogens in a breathable airstream in an environment has a device having an airstream intake for receiving a volume of untreated air located in a first position, an airstream outlet for expelling a volume of treated air, the airstream outlet located in a second position extending above the first position, a flow path extending between the airstream intake and the airstream outlet, at least one of a UV generator and a UV-C emitter optically coupled to the flow path, a power source operably connected to the one of the at least one of the UV generator and the UV emitter, and a pressure generator fluidly connected to the airstream intake, the pressure generator configured to impart a flow from the airstream intake to the airstream outlet, wherein the pressure generator can be at least one of a force of flow from in line pressurized source or provided by a fan within the housing, and wherein a portion of the flow path includes a UV-C highly reflective surface.

Abstract: An air flow system for reducing pathogens in a breathable airstream in an environment has a device having an airstream intake for receiving a volume of untreated air located in a first position, an airstream outlet for expelling a volume of treated air, the airstream outlet located in a second position extending above the first position, a flow path extending between the airstream intake and the airstream outlet, at least one of a UV generator and a UV-C emitter optically coupled to the flow path, a power source operably connected to the one of the at least one of the UV generator and the UV emitter, and a pressure generator fluidly connected to the airstream intake, the pressure generator configured to impart a flow from the airstream intake to the airstream outlet, wherein the pressure generator can be at least one of a force of flow from in line pressurized source or provided by a fan within the housing, and wherein a portion of the flow path includes a UV-C highly reflective surface.

Abstract: A handheld device for treating air to a user includes an airflow path having an illumination chamber with a reflective surface, wherein the reflective surface is sufficiently reflective and configured to impart multiple reflections of at least a portion of the light introduced into the illumination chamber. The introduced light is produced by an onboard UV light generator, wherein the UV light generator can be cycled corresponding to at least one of a pressure and an airflow in the airflow path.

Abstract: A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.

Abstract: A field effect transistor having a drain, a gate and a source, where the drain and source are formed by semiconductor regions of a first type, and in which a further doped region is provided intermediate the gate and the drain. Field gradients around the drain are thereby reduced.

Abstract: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.

Abstract: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.

Abstract: A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.

Abstract: A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.

Abstract: A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.

Abstract: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.

Abstract: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.

Abstract: A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.

Abstract: A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.

Abstract: A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.

Abstract: A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.

Abstract: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.

Abstract: A field effect transistor having a drain, a gate and a source, where the drain and source are formed by semiconductor regions of a first type, and in which a further doped region is provided intermediate the gate and the drain. Field gradients around the drain are thereby reduced.