Abstract: A method used to form a semiconductor device having a capacitor comprises placing a semiconductor wafer assembly into a chamber of a plasma source, the wafer assembly comprising a layer of insulation having at least one contact therein and a surface, and further comprising a conductive layer over the surface and in the contact. Next, in the chamber, a layer of etch resistant material is formed within the contact over the conductive layer, the etch resistant material not forming over the surface.

Abstract: A method used to form a semiconductor device having a capacitor comprises placing a semiconductor wafer assembly into a chamber of a plasma source, the wafer assembly comprising a layer of insulation having at least one contact therein and a surface, and further comprising a conductive layer over the surface and in the contact. Next, in the chamber, a layer of etch resistant material is formed within the contact over the conductive layer, the etch resistant material not forming over the surface.

Abstract: A method used to form a semiconductor device having a capacitor comprises placing a semiconductor wafer assembly into a chamber of a plasma source, the wafer assembly comprising a layer of insulation having at least one contact therein and a surface, and further comprising a conductive layer over the surface and in the contact. Next, in the chamber, a layer of etch resistant material is formed within the contact over the conductive layer, the etch resistant material not forming over the surface.

Abstract: A method used to form a semiconductor device having a capacitor comprises placing a semiconductor wafer assembly into a chamber of a plasma source, the wafer assembly comprising a layer of insulation having at least one contact therein and a surface, and further comprising a conductive layer over the surface and in the contact. Next, in the chamber, a layer of etch resistant material is formed within the contact over the conductive layer, the etch resistant material not forming over the surface.

Abstract: A method used to form a semiconductor device having a capacitor comprises placing a semiconductor wafer assembly into a chamber of a plasma source, the wafer assembly comprising a layer of insulation having at least one contact therein and a surface, and further comprising a conductive layer over the surface and in the contact. Next, in the chamber, a layer of etch resistant material is formed within the contact over the conductive layer, the etch resistant material not forming over the surface.

Abstract: A method used to form a semiconductor device having a capacitor comprises placing a semiconductor wafer assembly into a chamber of a plasma source, the wafer assembly comprising a layer of insulation having at least one contact therein and a surface, and further comprising a conductive layer over the surface and in the contact. Next, in the chamber, a layer of etch resistant material is formed within the contact over the conductive layer, the etch resistant material not forming over the surface.

Abstract: A method and apparatus for changing the electrical characteristics of an antenna in a communications system includes first and second conductive portions separated by a slot. Circuit elements are coupled between the first and second conductive portions, the circuit elements being operably controlled by a bias current to control flow of RF current within the first and second conductive elements, wherein the path of the RF current is directed to be in substantially different locations within the first and second conductive elements.

Abstract: A method used to form a semiconductor device having a capacitor comprises placing a semiconductor wafer assembly into a chamber of a plasma source, the wafer assembly comprising a layer of insulation having at least one contact therein and a surface, and further comprising a conductive layer over the surface and in the contact. Next, in the chamber, a layer of etch resistant material is formed within the contact over the conductive layer, the etch resistant material not forming over the surface.

Abstract: An apparatus and method to dynamically shape the projected energy profile of an electron beam and the energy distribution of an electron beam of a cathode ray tube to provide a single cathode ray tube the ability to display multiple image formats of varying resolutions, brightnesses and aspect ratios. In one embodiment, the invention contemplates the introduction of a shaping lens along the path of the electron beam comprising at least three electrodes. Voltages are selectively applied to the electrodes to dynamically and selectively vary the projected energy profile of an electron beam in a plane perpendicular to the longitudinal axis of the cathode ray tube.

Abstract: A method used to form a semiconductor device having a capacitor comprises placing a semiconductor wafer assembly into a chamber of a plasma source, the wafer assembly comprising a layer of insulation having at least one contact therein and a surface, and further comprising a conductive layer over the surface and in the contact. Next, in the chamber, a layer of etch resistant material is formed within the contact over the conductive layer, the etch resistant material not forming over the surface.

Abstract: A cathode-luminescent panel lamp (20) includes an evacuated tube (21) having a phosphor coating (25) on the inside surface of a face plate (24). An electron gun (28) is arranged to discharge at least one conical beam of electrons toward the coating to form an electron cloud within the tube. Shaping electrodes (29,30) positioned within the tube distribute and normalize the electron density of the cloud as a function of the angle (.theta.). The electrons pass through a field-separating mesh (39) to impinge upon a secondary emission mesh (40), which amplifies the electron density. The amplified electrons excite the phosphor coating to produce light of substantially-constant intensities across the face plate. The improved lamp may be used to back-light an LCD or in a stadium display.