Abstract: Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the substrate surface. Such approach permits use of precursors that otherwise would be wholly unsuitable for deposition applications, as lacking requisite volatility and transport characteristics for vapor phase deposition processes.

Abstract: A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present.

Abstract: A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched substrates experience lower incidents of stiction relative to substrates etched using conventional wet etching techniques.

Abstract: A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid, an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched MEMS substrates experience lower incidents of stiction relative to MEMS substrates etched using conventional wet etching techniques.

Abstract: A Chemical Mechanical Planarization (CMP) Pad. The CMP pad may be hydrophobic due to the incorporation of metal complexing agents. The CMP pad substantially retaining planarazation characteristics throughout planarization applications. Shearing, hardness, wearing, water absorbtion and electrical characteristics of the CMP pad remain substantially constant during CMP applications.

Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes.

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

Abstract: Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.

Abstract: Metalorganic precursors of the formula: (R1R2N)a-bMXb wherein: M is the precursor metal center, selected from the group of Ta, Ti, W, Nb, Si, Al and B; a is a number equal to the valence of M; 1?b?(a-1); R1 and R2 can be the same as or different from one another, and are each independently selected from the group of H, C1-C4 alkyl, C3-C6 cycloalkyl, and RO3Si, where each R0 can be the same or different and each R0 is independently selected from H and C1-C4 alkyl; and X is selected from the group of chlorine, fluorine, bromine and iodine. Precursors of such formula are useful for chemical vapor deposition (MOCVD) of conductive barrier materials in the manufacture of microelectronic device structures, e.g., by atomic layer chemical vapor deposition on a substrate bearing nitrogen-containing surface functionality. Further described is a method of forming Si3N4 on a substrate at low temperature, e.g., using atomic layer chemical vapor deposition (ALCVD).

Abstract: A windowed chamber, e.g., a semiconductor manufacturing process chamber such as a scrubber, deposition chamber, thermal reactor, or the like, including a port with a radiation-transmissive window therein. Interiorly disposed within the chamber is (i) a disposable film on an interior surface of the window and/or (ii) a colorimetric medium disposed in viewable relationship to the window, so that a colorimetric change is perceivable through the window, e.g., visually or by optical sensing device, when the colorimetric medium is exposed to target gas species. Also disclosed is a gas detection article including a polymeric material that is colorimetrically responsive to the presence of at least one target gas species, in exposure thereto.

Abstract: A CVD process for producing low-dielectric constant, SiOC thin films using organosilicon precursor compositions having at least one alkyl group and at least one cleavable organic functional group that when activated rearranges and cleaves as a highly volatile liquid or gaseous by-product. In a first step, a dense SiOC thin film is CVD deposited from the organosilicon precursor having at least one alkyl group and at least one cleavable organic functional group, having retained therein at least a portion of the alkyl and cleavable organic functional groups. In a second step, the dense SiOC thin film is post annealed to effectively remove the volatile liquid or gaseous by-products, resulting in a porous low-dielectric constant SiOC thin film. The porous, low dielectric constant, SiOC thin films are useful as insulating layers in microelectronic device structures. Preferred porous, low-dielectric SiOC thin films are produced using di(formato)dimethylsilane as the organosilicon precursor.

Abstract: An abrasive free formulation for chemical mechanical polishing and method for using the formulation for polishing copper and related materials. The abrasive free formulation has a high removal rate on copper and a low removal rate on barrier material. The abrasive free formulation comprises at least an oxidizing agent and an activating agent.

Abstract: The present invention relates to a delivery system for vaporizing and delivering vaporized solid and liquid precursor materials at a controlled rate having particular utility for semiconductor manufacturing applications. The system includes a vaporization vessel, a processing tool and a connecting vapor line therebetween, where the system further includes an input flow controller and/or an output flow controller to provide a controlled delivery of a vaporizable source material to the vaporization vessel and a controlled flow rate of vaporized source material to the processing tool.

Abstract: An organosilicon precursor for vapor deposition, e.g., low pressure (<100 Torr), plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film, wherein the precursor includes at least one of: (i) silicon-pendant oxiranyl functionality; and (ii) a disilyl moiety of the formula ?wherein x is an integer having a value of from 0 to 4 inclusive. These precursors are useful for the formation of dielectric films having dielectric constants on the order of ˜3 and less, and a hardness exceeding ˜1 GigaPascals.

Abstract: An electrical terminal and a system of the terminal and a housing is disclosed as an example of the present invention. The electrical terminal and the housing have a number of advantages including being sufficiently stiff to prevent arcing and physical damage to the electrical terminal upon being exposed to surge current/voltage. The terminal includes a contact with a base portion from which two spaced apart arms extend outwardly. First portions of the arms are generally parallel to one another. Second portions of the arms converge toward each other and then flare outwardly along third portions of the arms. At the junction of the second and third portions, there is a contact region formed to receive the lead of a surge protection device. The terminal is enclosed in an opening in the electrically insulative housing, the opening being bordered by walls closely adjacent to the first portions of the arms. The spacing of the walls from the arms is about 0.001 inches on each side of the terminal.

Abstract: A modular terminal block assembly including modular shells having channel shaped and walled ends, multiple housings for insulation displacements connectors and slotted partitions. A universal connector with extending parallel arms connect abutting modular shells, and barrier strips are located within the modular shells abutting the housings. End shells are also attached to the modular shells. Grease is placed in the housing and in activators mounted to the housings. The shells are filled with potting compound where the arms and partitions integral with the shells act as reinforcing elements in the compound. Thereafter the compound hardens so as to strengthen and stiffen the connected shells. This results in a robust assembly.

Abstract: An electrical terminal and a system of the terminal and a housing is disclosed as an example of the present invention. The electrical terminal and the housing have a number of advantages including being sufficiently stiff to prevent arcing and physical damage to the electrical terminal upon being exposed to surge current/voltage. The terminal includes a contact with a base portion from which two spaced apart arms extend outwardly. First portions of the arms are generally parallel to one another. Second portions of the arms converge toward each other and then flare outwardly along third portions of the arms. At the junction of the second and third portions, there is a contact region formed to receive the lead of a surge protection device. The tenminal is enclosed in an opening in the electrically insulative housing, the opening being bordered by walls closely adjacent to the first portions of the arms. The spacing of the walls from the arms is about 0.001 inches on each side of the terminal.

Abstract: A surge protection cartridge is disclosed which is compact, allows for surge protection devices to be inserted and removed by hand, is rugged, is easy to use and is economical. The cartridge includes a plastic housing, a series of tip and ring terminals mounted to the housing, a ground bar mounted within the housing, a guide strip frictionally mounted to the housing, two attachment clips and a cover. The guide strip is partitioned and includes surge protection device pads with three holes and funnel-like bordering surfaces around each hole to facilitate installation of the devices. The side walls of the housing are shortened to allow hand installation and removal of devices and the cover is used to protect the devices and maintain their connection even when the cartridge is roughly handled. The attachment clips connect to the housing, to a standard telecommunication frame and to a modular terminal block assembly.