Abstract: A semiconductor growth system includes a chamber and a source of electromagnetic radiation. A detector is arranged to detect absorption of radiation from the source by a chloride- based chemical of the reaction chamber. A control system controls the operation of the chamber in response to the absorption of radiation by the chloride-based chemical. The control system controls the operation of the chamber by adjusting a parameter of the reaction chamber.

Abstract: The present invention relates to the field of semiconductor processing and provides apparatus and methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the invention comprises heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention comprises radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.

Abstract: Methods of depositing compound semiconductor materials on one or more substrates include metering and controlling a flow rate of a precursor liquid from a precursor liquid source into a vaporizer. The precursor liquid may comprise at least one of GaCl3, InCl3, and AlCl3 in a liquid state. The precursor liquid may be vaporized within the vaporizer to form a first precursor vapor. The first precursor vapor and a second precursor vapor may be caused to flow into a reaction chamber, and a compound semiconductor material may be deposited on a surface of a substrate within the reaction chamber from the precursor vapors. Deposition systems for performing such methods include devices for metering and/or controlling a flow of a precursor liquid from a liquid source to a vaporizer, while the precursor liquid remains in the liquid state.

Abstract: Deposition systems include a reaction chamber, a substrate support structure disposed within the chamber for supporting a substrate within the reaction chamber, and a gas input system for injecting one or more precursor gases into the reaction chamber. The gas input system includes at least one precursor gas furnace disposed at least partially within the reaction chamber. Methods of depositing materials include separately flowing a first precursor gas and a second precursor gas into a reaction chamber, flowing the first precursor gas through at least one precursor gas flow path extending through at least one precursor gas furnace disposed within the reaction chamber, and, after heating the first precursor gas within the at least one precursor gas furnace, mixing the first and second precursor gases within the reaction chamber over a substrate.

Abstract: Deposition systems include a reaction chamber, and a substrate support structure disposed at least partially within the reaction chamber. The systems further include at least one gas injection device and at least one vacuum device, which together are used to flow process gases through the reaction chamber. The systems also include at least one access gate through which a workpiece substrate may be loaded into the reaction chamber and unloaded out from the reaction chamber. The at least one access gate is located remote from the gas injection device. Methods of depositing semiconductor material may be performed using such deposition systems. Methods of fabricating such deposition systems may include coupling an access gate to a reaction chamber at a location remote from a gas injection device.

Abstract: This invention provides methods that permit wafers to be loaded and unloaded in a gas-phase epitaxial growth chamber at high temperatures. Specifically, this invention provides a method for moving wafers or substrates that can bathe a substrate being moved in active gases that are optionally temperature controlled. The active gases can act to limit or prevent sublimation or decomposition of the wafer surface, and can be temperature controlled to limit or prevent thermal damage. Thereby, previously-necessary temperature ramping of growth chambers can be reduced or eliminated leading to improvement in wafer throughput and system efficiency.

Abstract: This invention provides apparatus, protocols, and methods that permit wafers to be loaded and unloaded in a gas-phase epitaxial growth chamber at high temperatures. Specifically, this invention provides a device for moving wafers or substrates that can bath a substrate being moved in active gases that are optionally temperature controlled. The active gases can act to limit or prevent sublimation or decomposition of the wafer surface, and can be temperature controlled to limit or prevent thermal damage. Thereby, previously-necessary temperature ramping of growth chambers can be reduced or eliminated leading to improvement in wafer throughput and system efficiency.

Abstract: Methods of depositing material on a substrate include forming a precursor gas and a byproduct from a source gas within a thermalizing gas injector. The byproduct may be reacted with a liquid reagent to form additional precursor gas, which may be injected from the thermalizing gas injector into a reaction chamber. Thermalizing gas injectors for injecting gas into a reaction chamber of a deposition system may include an inlet, a thermalizing conduit, a liquid container configured to hold a liquid reagent therein, and an outlet. A pathway may extend from the inlet, through the thermalizing conduit to an interior space within the liquid container, and from the interior space within the liquid container to the outlet. The thermalizing conduit may have a length that is greater than a shortest distance between the inlet and the liquid container. Deposition systems may include one or more such thermalizing gas injectors.

Abstract: Systems and methods for the gas treatment of one or more substrates include at least two gas injectors in a reaction chamber, one of which may be movable. The systems may also include a substrate support structure for holding one or more substrates disposed within the reaction chamber. The movable gas injector may be disposed between the substrate support structure and another gas injector. The gas injectors may be configured to discharge different process gasses therefrom. The substrate support structure may be rotatable around an axis of rotation.

Abstract: The present invention provides improved gas injectors for use with chemical vapour deposition (CVD) systems that thermalize gases prior to injection into a CVD chamber. The provided injectors are configured to increase gas flow times through heated zones and include gas-conducting conduits that lengthen gas residency times in the heated zones. The provided injectors also have outlet ports sized, shaped, and arranged to inject gases in selected flow patterns. The invention also provides CVD systems using the provided thermalizing gas injectors. The present invention has particular application to high volume manufacturing of GaN substrates.

Abstract: A semiconductor growth system includes a chamber and a source of electromagnetic radiation. A detector is arranged to detect absorption of radiation from the source by a chloride- based chemical of the reaction chamber. A control system controls the operation of the chamber in response to the absorption of radiation by the chloride-based chemical. The control system controls the operation of the chamber by adjusting a parameter of the reaction chamber.

Abstract: In embodiments of the present invention improved capabilities are described for using a Learning Management System Portal (LMS Portal) to develop learning content, manage learning content, search learning content, distribute and publish, and sell learning content to users of the LMS Portal or third parties that may be associated with the LMS Portal. The LMS Portal may include a learning content management system (LCM System). The LCM System may enable multiple users and/or developers to create, store, aggregate or revise, manage, and publish, distribute, and sell learning content for use within the LMS Portal, and aggregate learning content that is available from other sources through the LMS Portal. The LMS Portal may be further associated with a plurality of LCM system modules, operating within a plurality of LCM systems, at least some of which are operated independently of the LMS Portal, such as LCM system modules that are operated by third party learning content providers.

Abstract: The invention provides an improved CVD reactor sub-system including a modular reactor enclosure and function modules. The modular reactor enclosure can accommodate a commercially available cold-wall CVD reactor chamber, and the function modules can be arranged on the reactor enclosure to provide functions necessary to perform a CVD process with the reactor chamber. Preferred function modules include modules for providing heat to a CVD reactor chamber and modules for measuring conditions internal to a CVD reactor chamber. The invention also provides methods for configuring such a CVD reactor sub-system, in particular configuring the sub-system to best perform a particular CVD process, and kits for performing such configuring. Advantageously, the invention allows a single CVD reactor sub-system to be reconfigured and rearranged so that it can best perform a number of different CVD processes.

Abstract: This invention provides gas injector apparatus that extends into a growth chamber in order to provide more accurate delivery of thermalized precursor gases. The improved injector can distribute heated precursor gases into a growth chamber in flows that spatially separated from each other up until they impinge of a growth substrate and that have volumes adequate for high volume manufacture. Importantly, the improved injector is sized and configured so that it can fit into existing commercial growth chamber without hindering the operation of mechanical and robot substrate handling equipment used with such chambers. This invention is useful for the high volume growth of numerous elemental and compound semiconductors, and particularly useful for the high volume growth of Group III-V compounds and GaN.

Abstract: This invention provides apparatus, protocols, and methods that permit wafers to be loaded and unloaded in a gas-phase epitaxial growth chamber at high temperatures. Specifically, this invention provides a device for moving wafers or substrates that can bath a substrate being moved in active gases that are optionally temperature controlled. The active gases can act to limit or prevent sublimation or decomposition of the wafer surface, and can be temperature controlled to limit or prevent thermal damage. Thereby, previously-necessary temperature ramping of growth chambers can be reduced or eliminated leading to improvement in wafer throughput and system efficiency.

Abstract: The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and apparatus for in-situ removal of undesired deposits in the interiors of reactor chambers, for example, on chamber walls and elsewhere. The invention provides methods according to which cleaning steps are integrated and incorporated into a high-throughput growth process. Preferably, the times when growth should be suspended and cleaning commenced and when cleaning should be terminated and growth resumed are automatically determined based on sensor inputs. The invention also provides reactor chamber systems for the efficient performance of the integrated cleaning/growth methods of this invention.

Abstract: The present invention relates to the field of semiconductor processing and provides apparatus and methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the invention comprises heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention comprises radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.

Abstract: A method and apparatus for removing contaminants from a fluid are disclosed. The fluid is introduced into a decontamination chamber such that the fluid is cooled and contaminants fall out within the decontamination chamber, producing a purified fluid. The purified fluid is then retrieved and can be used in a supercritical processing system.

Abstract: This invention provides methods for fabricating substantially continuous layers of a group III nitride semiconductor material having low defect densities and optionally having a selected crystal polarity. The methods include epitaxial growth nucleating and/or seeding on the upper portions of a plurality of pillars/islands of a group III nitride material that are irregularly arranged on a template structure. The upper portions of the islands have low defect densities and optionally have a selected crystal polarity. The invention also includes template structures having a substantially continuous layer of a masking material through which emerge upper portions of the pillars/islands. The invention also includes such template structures. The invention can be applied to a wide range of semiconductor materials, both elemental semiconductors, e.g., combinations of Si (silicon) with strained Si (sSi) and/or Ge (germanium), and compound semiconductors, e.g.

Abstract: A method and system for reliably reducing the formation of particles upon wafers or substrates during wafer processes is disclosed. The method and system reduces residue contamination of a substrate material during wafer processes by pre-filling a pressure chamber to a first pressure P1 with a purified pre-fill prior to filling the pressure chamber with a primary bulk source at a second pressure P2. By pre-filling a chamber with purified pre-fill source at the first pressure P1 which is substantially equal to the bulk source pressure P2, the contaminants found in the bulk CO2 remain within the bulk CO2. Thus, this method and system reduces precipitation of contaminates caused by the depressurization of the bulk source during wafer processes and thereby reduces corresponding substrate material contamination.