Patents by Inventor Thomas C. Anthony

Thomas C. Anthony has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9346287
    Abstract: An imaging method includes coating a transfer member with an adhesion promoter in a liquid state, changing the adhesion promoter on the transfer member from the liquid state to at least one of a solid state and a get state, depositing a liquid marking agent on the solidified adhesion promoter corresponding to an image, changing a state of the adhesion promoter from the solid state to the flowable state, and transferring the liquid marking agent and the adhesion promoter in the flowable state from the transfer member to a substrate to form a hard version of the image thereon.
    Type: Grant
    Filed: October 2, 2012
    Date of Patent: May 24, 2016
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Henryk Birecki, Napoleon Leoni, Omer Gila, Thomas C Anthony
  • Patent number: 8892005
    Abstract: Printer charging blades and printers are disclosed. An example charging blade for a printer includes an insulating layer to contact a photo imaging surface at an angle to apply pressure to the photo imaging surface, the pressure to control an amount of material present on the photo imaging surface, and a conductive layer attached to a side of the insulating layer, the conductive layer to be charged and to apply a first charge to the photo imaging surface.
    Type: Grant
    Filed: April 30, 2012
    Date of Patent: November 18, 2014
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Quang P. Lam, Michael H. Lee, Omer Gila, Thomas C. Anthony, Seongsik Chang, Paul F. Matheson
  • Publication number: 20130287443
    Abstract: Printer charging blades and printers are disclosed. An example charging blade for a printer includes an insulating layer to contact a photo imaging surface at an angle to apply pressure to the photo imaging surface, the pressure to control an amount of material present on the photo imaging surface, and a conductive layer attached to a side of the insulating layer, the conductive layer to be charged and to apply a first charge to the photo imaging surface.
    Type: Application
    Filed: April 30, 2012
    Publication date: October 31, 2013
    Inventors: Quang P. Lam, Michael H. Lee, Omer Gila, Thomas C. Anthony, Seongsik Chang, Paul F. Matheson
  • Publication number: 20130025483
    Abstract: Substrate treatment apparatus, printers, and methods to treat a print substrate are disclosed. An example apparatus includes a first roller to receive a treatment fluid from a reservoir, a blade to adjust an amount of the treatment fluid present on the first roller, and a second roller to receive an adjusted amount of the treatment fluid from the first roller and to apply the treatment fluid to a substrate, the treatment fluid applied to the substrate to result in a layer of treatment fluid less than about 0.4 micrometers thick on the substrate.
    Type: Application
    Filed: July 29, 2011
    Publication date: January 31, 2013
    Inventors: Omer Gila, Daihua Zhang, Thomas C. Anthony, Hou Tee Ng
  • Publication number: 20110050764
    Abstract: An imaging method includes coating a transfer member with an adhesion promoter in a liquid state, changing the adhesion promoter on the transfer member from the liquid state to at least one of a solid state and a gel state, depositing a liquid marking agent on the solidified adhesion promoter corresponding to an image, changing a state of the adhesion promoter from the solid state to the flowable state, and transferring the liquid marking agent and the adhesion promoter in the flowable state from the transfer member to a substrate to form a hard version of the image thereon.
    Type: Application
    Filed: August 26, 2009
    Publication date: March 3, 2011
    Inventors: Henryk Birecki, Napoleon Leoni, Omer Gila, Thomas C. Anthony
  • Patent number: 7799581
    Abstract: Methods for creating a memory device can include depositing a sense layer, patterning the sense layer to form a plurality of magnetic data cells, depositing a separation layer over the plurality of data cells, depositing a reference layer over the separation layer, and patterning the reference layer to form an elongated magnetic reference cell wherein the elongated magnetic reference cell extends uninterrupted along more than one of the plurality of magnetic data cells.
    Type: Grant
    Filed: August 7, 2008
    Date of Patent: September 21, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Thomas C. Anthony, Darrel R. Bloomquist, Judy Bloomquist, legal representative, Manoj K. Bhattacharyya
  • Patent number: 7557782
    Abstract: A display element includes a variable optical element that changes appearance in response to changes in current, and a programmable resistance in series with the variable optical element. The resistance of the programmable resistance decreases in response to a first current in a first direction. The resistance of the programmable resistance increases in response to a second current in a second direction.
    Type: Grant
    Filed: October 20, 2004
    Date of Patent: July 7, 2009
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Thomas C. Anthony, Lung T. Tran, Gary Alfred Gibson
  • Patent number: 7522446
    Abstract: A method for making magnetic random access memories (MRAM) which reduces heat conduction from memory cells in an MRAM array. The method uses grid of bit and word lines for selectively accessing data in the array of magnetic memory cells. The grid has a plurality of thermally and electrically resistive portions which provide connections to the magnetic memory cells. The resistive portions increase the thermal resistance for heat generated by each memory cell and during operation provide localized heating of active memory cells to ease cell state switching.
    Type: Grant
    Filed: October 31, 2003
    Date of Patent: April 21, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Heon Lee, Thomas C. Anthony, Manish Sharma
  • Publication number: 20080299680
    Abstract: Methods for creating a memory device can include depositing a sense layer, patterning the sense layer to form a plurality of magnetic data cells, depositing a separation layer over the plurality of data cells, depositing a reference layer over the separation layer, and patterning the reference layer to form an elongated magnetic reference cell wherein the elongated magnetic reference cell extends uninterrupted along more than one of the plurality of magnetic data cells.
    Type: Application
    Filed: August 7, 2008
    Publication date: December 4, 2008
    Inventors: Thomas C. Anthony, Darrel R. Bloomquist, Judy Bloomquist, Manoj K. Bhattacharyya
  • Patent number: 7422912
    Abstract: In one embodiment, a memory device includes a plurality of magnetic data cells and a magnetic reference cell extending uninterrupted along more than one of the plurality of data cells.
    Type: Grant
    Filed: December 23, 2004
    Date of Patent: September 9, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Thomas C. Anthony, Judy Bloomquist, legal representative, Manoj K. Bhattacharyya, Darrel R. Bloomquist
  • Patent number: 7391641
    Abstract: An exemplary memory array including a plurality of memory cells, each of the memory cells comprises a first ferromagnetic layer, a second ferromagnetic layer spaced apart from the first ferromagnetic layer by a non-magnetic separating layer and being magnetically coupled to the first ferromagnetic layer by demagnetizing fields from the first ferromagnetic layer, a spacer layer above the second ferromagnetic layer, and a reference layer above the spacer layer. The first ferromagnetic layer, non-magnetic separating layer, and second ferromagnetic layer in combination function as a data layer of the memory cell.
    Type: Grant
    Filed: November 23, 2005
    Date of Patent: June 24, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Manish Sharma, Lung Tran, Thomas C. Anthony
  • Patent number: 7196957
    Abstract: The invention includes a stacked magnetic memory structure. The magnetic memory structure includes a stacked magnetic memory structure. The first layer includes a first plurality of magnetic tunnel junctions. A second layer is formed adjacent to the first layer. The second layer includes a second plurality of magnetic tunnel junctions. The stacked magnetic memory structure further includes a common first group conductor connected to each of the first plurality of magnetic tunnel junctions and the second plurality of magnetic tunnel junctions.
    Type: Grant
    Filed: April 13, 2005
    Date of Patent: March 27, 2007
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Lung Tran, Thomas C. Anthony
  • Patent number: 7195927
    Abstract: An exemplary method for making a memory structure having different-sized memory cell layers comprises forming at least two layers of ferromagnetic materials, forming at least one mask layer above the ferromagnetic materials, patterning the at least one mask layer, etching the ferromagnetic materials using the at least one mask layer as a first etch transfer mask, laterally reducing a planar dimension of the at least one mask layer to be narrower than the ferromagnetic materials, and etching a layer of the ferromagnetic materials using the reduced at least one mask layer as a second etch transfer mask, such that the ferromagnetic layer being etched becomes a different lateral size than another ferromagnetic layer of the ferromagnetic materials.
    Type: Grant
    Filed: October 22, 2003
    Date of Patent: March 27, 2007
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Manish Sharma, Thomas C. Anthony
  • Patent number: 7193259
    Abstract: A thermally written magnetic memory device is disclosed. The thermally written magnetic memory device includes a plurality of thermally written magnetic tunnel junction devices. Each thermally written magnetic tunnel junction device includes a super-paramagnetically stable data layer. The data layer includes a high coercivity at a read temperature such that a bit of data previously written to the data layer at a higher write temperature can be read from the data layer at the read temperature. The data layer has a low coercivity at the higher write temperature and data is written to the data layer at the higher write temperature. Therefore, at the lower read temperature, the thermally written magnetic memory device is a read only non-volatile memory and the data stored therein can be read many times but new data cannot be written to the data layer at the read temperature.
    Type: Grant
    Filed: July 23, 2004
    Date of Patent: March 20, 2007
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Manoj K. Bhattacharyya, Thomas C. Anthony
  • Patent number: 7187580
    Abstract: Embodiments of the present invention provide a magnetic memory. In one embodiment, the magnetic memory comprises a magnetic memory cell and a conductor configured to provide a magnetic field to write the magnetic memory cell. Structure is configured to direct the magnetic field and reduce coercivity of the magnetic memory cell.
    Type: Grant
    Filed: September 9, 2005
    Date of Patent: March 6, 2007
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Thomas C. Anthony, Manoj K. Bhattacharyya, Judy Bloomquist, legal representative, Darrel R. Bloomquist, deceased
  • Patent number: 7102921
    Abstract: The present invention provides a magnetic memory device that includes a magnetic memory cell switchable between two states by the application of a magnetic field wherein the magnetic field for such switching is dependent in part on a memory cell temperature. The device further includes at least one heater element proximate to the magnetic memory cell and series connected with the magnetic memory cell for heating of the magnetic memory cell. The device also includes a circuit for selectively applying the electrical current through the at least one heater element so as to heat the cell and facilitate cell state-switching.
    Type: Grant
    Filed: May 11, 2004
    Date of Patent: September 5, 2006
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Thomas C. Anthony, Frederick A. Perner, Heon Lee, Robert G Walmsley
  • Patent number: 7057920
    Abstract: A method of performing a thermally assisted write operation on a selected two conductor spin valve memory (SVM) cell having a material wherein the coercivity is decreased upon an increase in temperature. In a particular embodiment, a first write magnetic field is established by a first write current flowing from a first voltage potential to a second voltage potential as applied to the first conductor. A second write magnetic field is established by a second write current flowing from a third voltage potential to a fourth voltage potential as applied to the second conductor. The voltage potential of the first conductor is greater than the voltage potential of the second conductor. As a result, a third current, flows from the first conductor through the SVM cell to the second conductor. The SVM cell has an internal resistance such that the flowing current generates heat within the SVM cell. As the SVM cell is self heated, the coercivity of the SVM cell falls below the combined write magnetic fields.
    Type: Grant
    Filed: April 26, 2004
    Date of Patent: June 6, 2006
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Frederick A. Perner, Thomas C. Anthony, Robert C Walmsley, Lung Tran
  • Patent number: 7057249
    Abstract: A memory device includes a first surface having memory chips disposed thereon, the memory chips defining an exterior face of the memory device, and a second surface opposite the exterior face. A magnetically permeable shield layer extends over at least one of the exterior face and the second surface of the memory device.
    Type: Grant
    Filed: July 2, 2003
    Date of Patent: June 6, 2006
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Thomas C. Anthony, Colin A. Stobbs, Manoj K. Bhattaharyya, Anthony P. Holden, Judy Bloomquist, legal representative, Darrel R. Bloomquist, deceased
  • Patent number: 7027319
    Abstract: Methods and apparatuses are disclosed for retrieving data stored in a magnetic integrated memory. In one embodiment, the method includes applying a perturbing hard-axis magnetic field to a magnetic element in a magnetic integrated memory and detecting a change in an electrical parameter caused by said perturbing hard-axis magnetic field.
    Type: Grant
    Filed: June 19, 2003
    Date of Patent: April 11, 2006
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Thomas C. Anthony, Richard L. Hilton, Lung T. Tran
  • Patent number: 6989327
    Abstract: An aspect of the present invention is a method of forming a contact in a thin-film device. The method includes forming a liftoff stencil, depositing at least one material through the liftoff stencil, removing a portion of the liftoff stencil, forming a re-entrant profile with the remaining portion of the liftoff stencil and depositing a conductor material in contact with the at least one material on the re-entrant profile.
    Type: Grant
    Filed: January 31, 2004
    Date of Patent: January 24, 2006
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Manish Sharma, Thomas C. Anthony, Heon Lee