Abstract: A solid-state memory including an array of magnetic storage cells and a set of conductors. The solid-state memory includes circuitry for reducing leakage current among the conductors thereby increasing signal to noise ratio during read operations.

Abstract: A magnetic memory cell having read-write conductor that is wholly clad with a high magnetic permeability soft magnetic material for a pinned-on-the-fly soft ferromagnetic reference layer is disclosed. The magnetic memory cell includes a ferromagnetic data layer, an intermediate layer formed on the ferromagnetic data layer, and a soft ferromagnetic reference layer having a non-pinned orientation of magnetization formed on the intermediate layer. The soft ferromagnetic reference layer includes a read-write conductor and a ferromagnetic cladding that completely surrounds the read-write conductor to form a cladded read-write conductor. During a read operation, a read current flowing through the read-write conductor generates a read magnetic field that does not saturate the ferromagnetic cladding. During a write operation, a write current flowing through the read-write conductor generates a write magnetic field that saturates the ferromagnetic cladding and extends to the ferromagnetic data layer.

Abstract: A typical MRAM device includes an array of memory cells, each memory cell includes a spin dependent tunneling junction. The defective tunnel junction may be repaired by voltage-exercising the tunnel junction. Nominal resistance of defective tunnel junction is increased by a voltage-exercising method. The voltage-exercising method is performed by applying one or more voltage cycles to the defective tunnel junction.

Abstract: A magnetic memory cell is disclosed having a structure that prevents disruptions to the magnetization in the sense layer of the magnetic memory cell. In one embodiment, the structure includes a high permeability magnetic film that serves as a keeper for the sense layer magnetization. The keeper structure provides a flux closure path that directs demagnetization fields away from the sense layer. In another embodiment, the structure contains a hard ferromagnetic film that applies a local magnetic field to the sense layer in the magnetic memory cell.

Abstract: A magnetic memory cell is disclosed having a structure that prevents disruptions to the magnetization in the sense layer of the magnetic memory cell. In one embodiment, the structure includes a high permeability magnetic film that serves as a keeper for the sense layer magnetization. The keeper structure provides a flux closure path that directs demagnetization fields away from the sense layer. In another embodiment, the structure contains a hard ferromagnetic film that applies a local magnetic field to the sense layer in the magnetic memory cell.

Abstract: A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.

Abstract: A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.

Abstract: A data storage device includes a group of memory cells. Write-once operations may be performed by damaging the thin-film barriers of at least some of the memory cells. The data storage device may be a Magnetic Random Access Memory (“MRAM”) device.

Abstract: A magnetic memory cell is disclosed having a structure that prevents disruptions to the magnetization in the sense layer of the magnetic memory cell. In one embodiment, the structure includes a high permeability magnetic film that serves as a keeper for the sense layer magnetization. The keeper structure provides a flux closure path that directs demagnetization fields away from the sense layer. In another embodiment, the structure contains a hard ferromagnetic film that applies a local magnetic field to the sense layer in the magnetic memory cell.

Abstract: A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.

Abstract: A magnetoresistive memory cell includes first and second conductive magnetic layers. One of the first and second layers is substantially “H” or “I” shaped. A separation layer is disposed between the first and second layers. In various embodiments, the separation layer is either conductive or nonconductive. In various embodiments, at least one of the first and second layers comprises one of a nickel-iron (NiFe), cobalt-iron (CoFe), or a nickel-iron-cobalt (NiFeCo) alloy. In one embodiment, the memory cell apparatus includes conductive magnetic reference and data layers. The data layer is substantially “H” or “I” shaped. A separation layer is disposed between the reference and data layers. The cell may be a tunneling magnetoresistive cell or a giant magnetoresistive cell. The separation layer is nonconductive in one embodiment and conductive in an alternative embodiment.

Abstract: A stabilized magnetic memory cell including a data storage layer having an interior region and a pair of end regions near a pair of opposing edges of the data storage layer and a stabilizing material that pins a magnetization in the end regions to a predetermined direction. A method for stabilizing a magnetic memory cell includes the steps of applying a magnetic field that rotates a magnetization in a pair of opposing side regions of a data storage layer of the magnetic memory cell toward a predetermined direction and that reduces free poles in a pair of opposing end regions of the magnetic memory cell, thereby reducing the likelihood of unpredictable switching behavior in the end regions.

Abstract: A magnetic memory cell with symmetric switching characteristics includes a sense layer and a reference layer coupled to the sense layer through a barrier layer. The magnetic memory cell further includes an additional reference layer coupled to the sense layer through a spacer layer. The additional reference layer is formed so that a set of demagnetization and coupling fields from the additional reference layer balance a set of demagnetization and coupling fields from the reference layer.

Abstract: A tunnel junction having a topography and/or interface layers that enhance its magneto-resistance. The topography of the tunnel junction maximizes spin tunneling from areas of ferromagnetic crystalline grains having high polarization and minimizes the effects of defect scattering at grain boundaries. The interface layers enhance magnetic polarization properties of ferromagnetic layers near interfaces to an insulating layer in a tunnel junction.

Abstract: A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.

Abstract: A stabilized magnetic memory cell including a data storage layer having an interior region and a pair of end regions near a pair of opposing edges of the data storage layer and a stabilizing material that pins a magnetization in the end regions to a predetermined direction. A method for stabilizing a magnetic memory cell includes the steps of applying a magnetic field that rotates a magnetization in a pair of opposing side regions of a data storage layer of the magnetic memory cell toward a predetermined direction and that reduces free poles in a pair of opposing end regions of the magnetic memory cell, thereby reducing the likelihood of unpredictable switching behavior in the end regions.

Abstract: A robust recording head with a spin tunneling sensing element separated from an interface between the recording head and a recording media so as not to be affected by collisions and other ill effects at the interface between the recording head and the recording media. The spin tunneling sensing element includes a pair of magnetic elements wherein one of the magnetic elements functions as a flux guide that conducts magnetic flux emanating from the recording media away from the interface to an active area of the spin tunneling sensing element.

Abstract: A magnetoresistive transducer includes at least one magnetoresistive element having a transverse easy axis. The use of a transverse easy axis prevents magnetic domains from forming in the magnetoresistive elements and results in a noise-free device. Various techniques for producing a transverse easy axis include the use of stress, and a magneto strictive material, during the formation of the element to orient the anisotropy of the element transverse to orient the anisotropy of the element transverse to the element, formation of the element in the presence of a magnetic field, high temperature anneal of the element, or any other method of forming the element with a prebiased state.

Abstract: A new class of materials for use as a dielectric to separate various metallic layers within a magnetoresistive transducer. The materials include oxides of Ta, Hf, Zr, Y, Ti, or Nb. Thin films of these materials, when fabricated in accordance with the teachings of the invention, constitute dielectric films which maintain their integrity as insulators at thicknesses down to 5 nm. Additionally, the adhesion of this class of dielectrics equals or exceeds that of commonly used dielectrics.

Abstract: A method for reducing Barkhausen noise in dual stripe magnetoresistive recording heads. The topography of the bottom conductor is controlled, specifically the conductor sidewall angle at the edge of the track is defined to be less than 45.degree. from the substrate plane. Restricting the conductor sidewall profile in this manner eliminates sources of magnetic domain nucleation.