Patents by Inventor Thomas E. Grebs

Thomas E. Grebs has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6399022
    Abstract: The invention provides water enriched with ozone by generating ozone from oxygen using short-wavelength ultraviolet light and pumping the generated ozone under pressure through a 0.1-micron filter into a sealed housing of deionized water. The filter is fabricated of a material such as polytetrafluoroethylene which does not react with water and ozone. The filter apertures are sufficiently small to prevent the formation of gas bubbles in the outlet fluid. The highly-purified outlet fluid is usable immediately in semiconductor wafer cleaning.
    Type: Grant
    Filed: September 15, 2000
    Date of Patent: June 4, 2002
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Malcolm R. Schuler, Rodney S. Ridley, Thomas E. Grebs
  • Publication number: 20020061621
    Abstract: A method for forming trenches in a device layer disposed on a silicon semiconductor substrate comprises: covering the device layer with an etch resistant masking layer to define at least two trench regions; removing semiconductor material from the exposed trench regions by applying an etching agent that selectively etches the semiconductor substrate with respect to the trench masking layer, thereby forming at least two trenches each comprising a floor and sidewalls; and, during the removal of semiconductor material, exposing the sidewalls to a passivating agent in increasing amounts, thereby passivating the sidewalls while reducing lateral etching of semiconductor material from them.
    Type: Application
    Filed: September 19, 2001
    Publication date: May 23, 2002
    Inventors: Thomas E. Grebs, Joseph L. Cumbo
  • Patent number: 6367493
    Abstract: The invention provides a pair of parallel megasonic transducers that generate parallel columns of megasonic waves across a cleaning container. Semiconductor wafers move back and forth transverse to the columns. The transducers have their back side potted with a silicone elastomer to prevent corrosion. In another embodiment megasonic waves from in-line transducers are dispersed with a cylindrical quartz rod. Water is enriched with ozone by pumping ozone under pressure through a filter into sealed housing of deionized water.
    Type: Grant
    Filed: April 10, 2001
    Date of Patent: April 9, 2002
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Malcolm R. Schuler, Robert F. Longenberger, Rodney S. Ridley, Thomas E. Grebs, Jason R. Trost, Raymond J. Webb, Michael A. Caravaggio, Terry L. Fenstermacher
  • Publication number: 20020038662
    Abstract: The invention provides a pair of parallel megasonic transducers that generate parallel columns of megasonic waves across a cleaning container. Semiconductor wafers move back and forth transverse to the columns. The transducers have their back side potted with a silicone elastomer to prevent corrosion. In another embodiment megasonic waves from in-line transducers are dispersed with a cylindrical quartz rod. Water is enriched with ozone by pumping ozone under pressure through a filter into sealed housing of deionized water.
    Type: Application
    Filed: December 6, 2001
    Publication date: April 4, 2002
    Applicant: INTERSIL CORPORATION
    Inventors: Malcolm R. Schuler, Robert F. Longenberger, Rodney S. Ridley, Thomas E. Grebs, Jason R. Trost, Raymond J. Webb, Michael A. Caravaggio, Terry L. Fenstermacher
  • Patent number: 6365942
    Abstract: An improved MOS-gated power device 300 with a substrate 101 having an upper layer 101a of doped monocrystalline silicon of a first conduction type that includes a doped well region 107 of a second conduction type. The substrate further includes at least one heavily doped source region 111 of the first conduction type disposed in a well region 107 at an upper surface of the upper layer, a gate region 106 having a conductive material 105 electrically insulated from the source region by a dielectric material, a patterned interlevel dielectric layer 112 on the upper surface overlying the gate and source regions 114, and a heavily doped drain region of the first conduction type 115. The improvement includes body regions 301 containing heavily doped polysilicon of the second conduction type disposed in a well region 107 at the upper surface of the monocrystalline substrate.
    Type: Grant
    Filed: December 6, 2000
    Date of Patent: April 2, 2002
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Christopher B. Kocon, Rodney S. Ridley, Thomas E. Grebs
  • Patent number: 6314974
    Abstract: The invention provides a pair of parallel megasonic transducers that generate parallel columns of megasonic waves across a cleaning container. Semiconductor wafers move back and forth transverse to the columns. The transducers have their back side potted with a silicone elastomer to prevent corrosion. In another embodiment megasonic waves from in-line transducers are dispersed with a cylindrical quartz rod. Water is enriched with ozone by pumping ozone under pressure through a filter into sealed housing of deionized water.
    Type: Grant
    Filed: June 28, 1999
    Date of Patent: November 13, 2001
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Malcolm R. Schuler, Robert F. Longenberger, Rodney S. Ridley, Thomas E. Grebs, Jason R. Trost, Raymond J. Webb, Michael A. Caravaggio, Terry L. Fenstermacher
  • Publication number: 20010015211
    Abstract: The invention provides a pair of parallel megasonic transducers that generate parallel columns of megasonic waves across a cleaning container. Semiconductor wafers move back and forth transverse to the columnns. The transducers have their back side potted with a silicone elastomer to prevent corrosion. In another embodiment megasonic waves from in-line transducers are dispersed with a cylindrical quartz rod. Water is enriched with ozone by pumping ozone under pressure through a filter into sealed housing of deionized water.
    Type: Application
    Filed: April 10, 2001
    Publication date: August 23, 2001
    Applicant: INTERSIL CORPORATION
    Inventors: Malcolm R. Schuler, Robert F. Longenberger, Rodney S. Ridley, Thomas E. Grebs, Jason R. Trost, Raymond J. Webb, Michael A. Caravaggio, Terry L. Fenstermacher
  • Patent number: 5940689
    Abstract: A method of fabricating a UMOS semiconductor device includes a blanket implant of an N type dopant into a surface of a substrate (for forming source regions), a high energy implant of a P type dopant into the substrate (for forming body regions), an etch through a hard mask to form trenches and mesas (each of the mesas having a source region at its top and a body region below), and concurrently (i) providing a gate dielectric on the sidewalls of the trenches and (ii) redistributing the dopants so that the body regions extend deeper into the substrate beneath the centers of the mesas than adjacent the walls of the trenches. Contact windows are etched in the mesas to allow electrical contact with the source regions and the body regions. The initial implant of P type dopant may be a blanket implant or an implant through a mask which concentrates the P type dopant in the centers of the mesas.
    Type: Grant
    Filed: June 30, 1997
    Date of Patent: August 17, 1999
    Assignee: Harris Corporation
    Inventors: Christopher L. Rexer, Mark L. Rineheimer, John M. S. Neilson, Thomas E. Grebs