Abstract: A ferroelectric memory cell includes a ferroelectric capacitor including a bottom electrode, a ferroelectric layer formed on the bottom electrode and a top electrode formed on the ferroelectric layer, a high permittivity dielectric layer formed over the ferroelectric capacitor, wherein the high permittivity dielectric layer includes an encapsulation layer and completely covers the top electrode, and a local interconnect electrode formed on the encapsulation layer.

Abstract: A ferroelectric capacitor includes a bottom electrode, a top electrode, and a ferroelectric layer located between the top and bottom electrodes that extends to completely encapsulate the top electrode, except for a contact hole to allow metalization of the top electrode. The total encapsulation of the top electrode reduces the sensitivity of the ferroelectric capacitor to hydrogen and thus improves electrical switching performance.

Abstract: A ferroelectric capacitor includes a bottom electrode, a top electrode, and a ferroelectric layer located between the top and bottom electrodes that extends to completely encapsulate the top electrode, except for a contact hole to allow metalization of the top electrode. The total encapsulation of the top electrode reduces the sensitivity of the ferroelectric capacitor to hydrogen and thus improves electrical switching performance.

Abstract: A ferroelectric capacitor includes a bottom electrode, a top electrode, and a ferroelectric layer located between the top and bottom electrodes that extends to completely encapsulate the top electrode, except for a contact hole to allow metalization of the top electrode. The total encapsulation of the top electrode reduces the sensitivity of the ferroelectric capacitor to hydrogen and thus improves electrical switching performance.

Abstract: A ferroelectric capacitor stack for use with an integrated circuit transistor in a ferroelectric memory cell is fabricated by: forming a first dielectric layer over the integrated circuit transistor; forming a bottom electrode over the first dielectric layer, the bottom electrode having a hole located over a first source/drain of the integrated circuit transistor; forming a second dielectric layer over the first dielectric layer and bottom electrode; forming a hole in the second dielectric layer to provide access to the bottom electrode; forming a ferroelectric plug in the hole in the second dielectric layer; forming a top electrode over the second dielectric layer and ferroelectric plug; forming a third dielectric layer over the second dielectric layer and top electrode; forming a first via through the first, second, and third dielectric layers, and through the hole in the bottom electrode, the via having sufficient width to provide access to a lateral edge of the bottom electrode hole; forming a second via

Abstract: A ferroelectric capacitor stack for use with an integrated circuit transistor in a ferroelectric memory cell is fabricated by: forming a first dielectric layer over the integrated circuit transistor; forming a bottom electrode over the first dielectric layer, the bottom electrode having a hole located over a first source/drain of the integrated circuit transistor; forming a second dielectric layer over the first dielectric layer and bottom electrode; forming a hole in the second dielectric layer to provide access to the bottom electrode; forming a ferroelectric plug in the hole in the second dielectric layer; forming a top electrode over the second dielectric layer and ferroelectric plug; forming a third dielectric layer over the second dielectric layer and top electrode; forming a first via through the first, second, and third dielectric layers, and through the hole in the bottom electrode, the via having sufficient width to provide access to a lateral edge of the bottom electrode hole; forming a second via

Abstract: An application program interface (API) provides an interface for common gateway interface (CGI) programs to parse a CGI input string of keywords and their values, each keyword/value pair being all text data separated by a deliminter character, into a buffer which is formated according to a data definition (DDS) file specification or template, thus building a data structure of converted values without keywords from an input string including keyword and text value pairs.

Abstract: A ferroelectric capacitor includes a bottom electrode, a top electrode, an a ferroelectric layer located between the top and bottom electrodes that extends to completely encapsulate the top electrode, except for a contact hole to allow metalization of the top electrode. The total encapsulation of the top electrode reduces the sensitivity of the ferroelectric capacitor to hydrogen and thus improves electrical switching performance. The encapsulation technique can also be used to improve the performance of ferroelectric transistors and other devices.

Abstract: A ferroelectric capacitor includes a bottom electrode, a top electrode, and a ferroelectric layer located between the top and bottom electrodes that extends to completely encapsulate the top electrode, except for a contact hole to allow metalization of the top electrode. The total encapsulation of the top electrode reduces the sensitivity of the ferroelectric capacitor to hydrogen and thus improves electrical switching performance. The encapsulation technique can also be used to improve the performance of ferroelectric transistors and other devices.

Abstract: A method to achieve good stepper focus and exposure over an entire wafer for a particular mask level before the start of a product run is described. This method can also be used to produce a characterization of lens field curvature (i.e., a surface of optimum focus across the lens) and to characterize lens astigmatism, defocus sensitivity, relative resolution, and other characteristics, and to check the stepper for optical column tilt. The process prevents the complexities of resist development from affecting determination of focus. The process involves forming an array of latent images in a resist and examining the scattered light from the edges of the latent images. Analysis of the scattered light quickly provides information on correct exposure and focus together with lens characteristics over the printing field.

Abstract: A method to achieve good stepper focus and exposure over an entire wafer for a particular mask level before the start of a product run is described. This method can also be used to produce a characterization of lens field curvature (i.e., a surface of optimum focus across the lens) and to characterize lens astigmatism, defocus sensitivity, relative resolution, and other characteristics, and to check the stepper for optical column tilt. The process prevents the complexities of resist development from affecting determination of focus. The process involves forming an array of latent images in a resist and examining the scattered light from the edges of the latent images. Analysis of the scattered light quickly provides information on correct exposure and focus together with lens characteristics over the printing field.

Abstract: A method to achieve good stepper focus and exposure over an entire wafer for a particular mask level before the start of a product run is described. This method can also be used to produce a characterization of lens field curvature (i.e., a surface of optimum focus across the lens) and to characterize lens astigmatism, defocus sensitivity, relative resolution, and other characteristics, and to check the stepper for optical column tilt. The process prevents the complexities of resist development from affecting determination of focus. The process involves forming an array of latent images in a resist and examining the scattered light from the edges of the latent images. Analysis of the scattered light quickly provides information on correct exposure and focus together with lens characteristics over the printing field.

Abstract: A ferroelectric capacitor includes a bottom electrode, a top electrode, and a ferroelectric layer located between the top and bottom electrodes that extends to completely encapsulate the top electrode, except for a contact hole to allow metalization of the top electrode. The total encapsulation of the top electrode reduces the sensitivity of the ferroelectric capacitor to hydrogen and thus improves electrical switching performance.

Abstract: A ferroelectric capacitor includes a bottom electrode, a top electrode, and a ferroelectric layer located between the top and bottom electrodes that extends to completely encapsulate the top electrode, except for a contact hole to allow metalization of the top electrode. The total encapsulation of the top electrode reduces the sensitivity of the ferroelectric capacitor to hydrogen and thus improves electrical switching performance.

Abstract: A stuffing box gland 20 that cooperates with packing 38 positioned within a stuffing box 18 to seal between a stuffing box housing 42 and a moveable polished rod 27 of an oilfield pump assembly 10. A lower end of a gland housing 46 forms a flange 50 extending radially outward from the gland housing 46 that is adapted for transmitting a variable compressive force to the packing 38, within the stuffing box 18. A plurality of attachment members 52 are utilized for interconnecting the gland housing flange 50 and the stuffing box housing flange 51 and may be adjusted to vary the compressive force exerted by the lower end 48 of the gland housing 46 on the packing 38. A sleeve 56 surrounds the polished rod 27 and includes a lower end 58 that seals with an annular seat 54.

Abstract: A computer implemented method and apparatus for creating a data structure comprising a non-linear data object with typed data fields and field names from a common gateway interface type input string.

Abstract: A control system for determining combustion quality in a combustion chamber of an internal combustion engine. For each combustion chamber, first and second sampling windows are generated and ionic currents sampled utilizing the spark plug as an electrode. In response to the samples, indications of combustion quality such as misfire, late combustion, and slow combustion are provided. When the engine is operating in a lean burn mode, rich correction are made to the engine air/fuel ratio in an amount dependent upon the combustion quality indications.

Abstract: The individual enantiomers of the compounds (Ia), (Ib), (IIa) or (IIb), optionally substituted by non-interfering substituent(s). The novel enantiomers can be obtained by biotransformation. The (Ia) or (IIa) compounds can be used for the synthesis of chiral carbocyclic nucleosides.

Abstract: Lactams of 1-amino-3-carboxylic acid cyclic compounds are provided in enantiomeric form, together with an enantiomer of the corresponding ring-opened amino-acid or ester, by reaction of the racemic lactam with a novel lactamase. The products are useful in the synthesis of chiral carbocyclic nucleotides. The enantiomer is preferably 2-azabicyclo?2.2.1!hept-5-en-3-one.

Abstract: Enantiomeric glutarimides such as aminoglutethimide and rogletimide are prepared by cyclisation of a corresponding ester-nitrile which is a good substrate for biotransformation with an enantiospecific esterase.