Abstract: A lighting device comprising at least a first light source and at least a first heat dissipation element. At least a first region of the dissipation element comprises at least one material selected from among (1) sintered silicon carbide, (2) a sintered mixture of silicon carbide and at least one other ceramic material, (3) a sintered mixture of silicon carbide and at least one metal other than aluminum, (4) a sintered mixture of silicon carbide, at least one other ceramic material and at least one metal other than aluminum and (5) a sintered mixture of silicon carbide, at least one other ceramic material and at least one metal. Also, a lighting device comprising at least a first light source and heat conducting means for dissipating heat.

Abstract: A lamp with an LED array is disclosed. The centralized nature of the LEDs allows the LEDs to be configured in a filament-like way using a supporting power structure, near the central portion of the optical envelope of the lamp. In example embodiments, the LEDs are cooled by a fluid medium to enable the LEDs to maintain appropriate mechanical stability and operating temperature. In some embodiments, the lamp operates at a power of at least 5 watts. Since the LED array can be centralized to form a filament-like structure, the light pattern from the lamp is not adversely affected by the presence of a heat sink or mechanical supporting parts. In some embodiments, phosphor is used provide wavelength conversion. The phosphor can be suspended within the optically transmissive fluid medium, placed remotely in the lamp structure, or applied to un-encapsulated LED die.

Abstract: There is provided a lighting device which emits light with an efficacy of at least 60 lumens per watt. The lighting device comprises at least one solid state light emitter, e.g., one or more light emitting diodes, and optionally further includes one or more lumiphor. In some embodiments, the output light is of a brightness of at least 300 lumens. In some embodiments, the output light has a CRI Ra of at least 90. Also, a method of lighting, comprising supplying electricity to a lighting device which emits light with an efficacy of at least 60 lumens per watt.

Abstract: There is provided a lighting device which emits light with an efficacy of at least 60 lumens per watt. The lighting device comprises at least one solid state light emitter, e.g., one or more light emitting diodes, and optionally further includes one or more lumiphor. In some embodiments, the output light is of a brightness of at least 300 lumens. In some embodiments, the output light has a CRI Ra of at least 90. Also, a method of lighting, comprising supplying electricity to a lighting device which emits light with an efficacy of at least 60 lumens per watt.

Abstract: There is provided a lighting device which emits light with an efficacy of at least 60 lumens per watt. The lighting device comprises at least one solid state light emitter, e.g., one or more light emitting diodes, and optionally further includes one or more lumiphor. In some embodiments, the output light is of a brightness of at least 300 lumens. In some embodiments, the output light has a CRI Ra of at least 90. Also, a method of lighting, comprising supplying electricity to a lighting device which emits light with an efficacy of at least 60 lumens per watt.

Abstract: A lamp with an LED array is disclosed. The centralized nature of the LEDs allows the LEDs to be configured in a filament-like way using a supporting power structure, near the central portion of the optical envelope of the lamp. In example embodiments, the LEDs are cooled by a fluid medium to enable the LEDs to maintain appropriate mechanical stability and operating temperature. In some embodiments, the lamp operates at a power of at least 5 watts. Since the LED array can be centralized to form a filament-like structure, the light pattern from the lamp is not adversely affected by the presence of a heat sink or mechanical supporting parts. In some embodiments, phosphor is used provide wavelength conversion. The phosphor can be suspended within the optically transmissive fluid medium, placed remotely in the lamp structure, or applied to un-encapsulated LED die.

Abstract: There is provided a lighting device which emits light with an wall plug efficiency of at least 85 lumens per watt. The lighting device comprises at least one solid state light emitter, e.g., one or more light emitting diodes, and optionally further includes one or more luminescent material. In some embodiments, the output light is of a brightness of at least 300 lumens. In some embodiments, the output light has a CRI Ra of at least 90. Also, a method of lighting, comprising supplying electricity to a lighting device which emits light with a wall plug efficiency of at least 85 lumens per watt.

Abstract: A lighting device comprising at least a first light source and at least a first heat dissipation element. At least a first region of the dissipation element comprises at least one material selected from among (1) sintered silicon carbide, (2) a sintered mixture of silicon carbide and at least one other ceramic material, (3) a sintered mixture of silicon carbide and at least one metal other than aluminum, (4) a sintered mixture of silicon carbide, at least one other ceramic material and at least one metal other than aluminum and (5) a sintered mixture of silicon carbide, at least one other ceramic material and at least one metal. Also, a lighting device comprising at least a first light source and heat conducting means for dissipating heat.

Abstract: Packaged semiconductor light emitting device are provided including a reflector having a lower sidewall portion defining a reflective cavity. A light emitting device is positioned in the reflective cavity. A first quantity of cured encapsulant material having a first index of refraction is provided in the reflective cavity including the light emitting device. A second quantity of cured encapsulant material having a second index of refraction, different from the first index of refraction, is provided on the first quantity of cured encapsulant material. The first and second index of refraction are selected to provide a buried lens in the reflective cavity.

Abstract: Methods of packaging a semiconductor light emitting device include dispensing a first quantity of encapsulant material into a cavity including the light emitting device. The first quantity of encapsulant material in the cavity is treated to form a hardened upper surface thereof having a shape. A luminescent conversion element is provided on the upper surface of the treated first quantity of encapsulant material. The luminescent conversion element includes a wavelength conversion material and has a thickness at a middle region of the cavity greater than proximate a sidewall of the cavity.

Abstract: Methods of packaging a semiconductor light emitting device include dispensing a first quantity of encapsulant material into a cavity including the light emitting device. The first quantity of encapsulant material in the cavity is treated to form a hardened upper surface thereof having a shape. A luminescent conversion element is provided on the upper surface of the treated first quantity of encapsulant material. The luminescent conversion element includes a wavelength conversion material and has a thickness at a middle region of the cavity greater than proximate a sidewall of the cavity.

Abstract: Packaged semiconductor light emitting device are provided including a reflector having a lower sidewall portion defining a reflective cavity. A light emitting device is positioned in the reflective cavity. A first quantity of cured encapsulant material having a first index of refraction is provided in the reflective cavity including the light emitting device. A second quantity of cured encapsulant material having a second index of refraction, different from the first index of refraction, is provided on the first quantity of cured encapsulant material. The first and second index of refraction are selected to provide a buried lens in the reflective cavity.

Abstract: Packaged semiconductor light emitting device are provided including a reflector having a lower sidewall portion defining a reflective cavity. A light emitting device is positioned in the reflective cavity. A first quantity of cured encapsulant material having a first index of refraction is provided in the reflective cavity including the light emitting device. A second quantity of cured encapsulant material having a second index of refraction, different from the first index of refraction, is provided on the first quantity of cured encapsulant material. The first and second index of refraction are selected to provide a buried lens in the reflective cavity.

Abstract: Methods of packaging a semiconductor light emitting device include dispensing a first quantity of encapsulant material into a cavity including the light emitting device. The first quantity of encapsulant material in the cavity is treated to form a hardened upper surface thereof having a shape. A luminescent conversion element is provided on the upper surface of the treated first quantity of encapsulant material. The luminescent conversion element includes a wavelength conversion material and has a thickness at a middle region of the cavity greater than proximate a sidewall of the cavity.

Abstract: A circuit for a lighting device comprises a sub-circuit which comprises a series current regulator and a group of solid state light emitters. The current regulator and the solid state light emitters are arranged in series. In some embodiments, the circuit further comprises a fan electrically connected in series in the sub-circuit. In some embodiments, the circuit further comprises a second sub-circuit which comprises a second series current regulator and a second group of solid state light emitters, the first sub-circuit and the second sub-circuit being arranged in parallel. In some embodiments, an anode of the series current regulator is electrically connected to a cathode of one of the solid state light emitters. Also, methods of lighting wherein a sum of voltage drops across light emitters and a current regulator is in the range of from 1.2 to 1.6 times the line voltage.

Abstract: Methods of packaging a semiconductor light emitting device include dispensing a first quantity of encapsulant material into a cavity including the light emitting device. The first quantity of encapsulant material in the cavity is treated to form a hardened upper surface thereof having a selected shape. A luminescent conversion element is provided on the upper surface of the treated first quantity of encapsulant material. The luminescent conversion element includes a wavelength conversion material and has a thickness at a middle region of the cavity greater than proximate a sidewall of the cavity.

Abstract: Reflectors for a semiconductor light emitting device include a lower sidewall portion defining a reflective cavity. A substantially horizontal shoulder portion extends outwardly from the sloped lower sidewall portion. The horizontal shoulder portion has a circumferentially extending moat formed therein. An upper sidewall portion extends upwardly from the horizontal shoulder portion.

Abstract: Methods of packaging a semiconductor light emitting device include dispensing a first quantity of encapsulant material into a cavity including the light emitting device. The first quantity of encapsulant material in the cavity is treated to form a hardened upper surface thereof having a selected shape. A luminescent conversion element is provided on the upper surface of the treated first quantity of encapsulant material. The luminescent conversion element includes a wavelength conversion material and has a thickness at a middle region of the cavity greater than proximate a sidewall of the cavity.

Abstract: There is provided a lighting device which emits light with an wall plug efficiency of at least 85 lumens per watt. The lighting device comprises at least one solid state light emitter, e.g., one or more light emitting diodes, and optionally further includes one or more luminescent material. In some embodiments, the output light is of a brightness of at least 300 lumens. In some embodiments, the output light has a CRI Ra of at least 90. Also, a method of lighting, comprising supplying electricity to a lighting device which emits light with a wall plug efficiency of at least 85 lumens per watt.

Abstract: Methods of packaging a semiconductor light emitting device include dispensing a first quantity of encapsulant material into a cavity including the light emitting device. The first quantity of encapsulant material in the cavity is treated to form a hardened upper surface thereof having a selected shape. A luminescent conversion element is provided on the upper surface of the treated first quantity of encapsulant material. The luminescent conversion element includes a wavelength conversion material and has a thickness at a middle region of the cavity greater than proximate a sidewall of the cavity.