Patents by Inventor Thomas H. Baum

Thomas H. Baum has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS SUCH AS FILMS INCLUDING SILICON, SILICON NITRIDE, SILICON DIOXIDE AND/OR SILICON-OXYNITRIDE
    Publication number: 20110183528
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SioxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Application
    Filed: March 22, 2011
    Publication date: July 28, 2011
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Ziyun Wang, Chongying Xu, Ravi K. Laxman, Thomas H. Baum, Bryan C. Hendrix, Jeffrey F. Roeder
  • SOURCE REAGENT COMPOSITIONS AND METHOD FOR FORMING METAL FILMS ON A SUBSTRATE BY CHEMICAL VAPOR DEPOSITION
    Publication number: 20110171382
    Abstract: A metalorganic complex composition comprising a metalorganic complex selected from the group consisting of: metalorganic complexes comprising one or more metal central atoms coordinated to one or more monodentate or multidentate organic ligands, and complexed with one or more complexing monodentate or multidentate ligands containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F; wherein when the number of metal atoms is one and concurrently the number of complexing monodentate or multidentate ligands is one, then the complexing monodentate or multidentate ligand of the metalorganic complex is selected from the group consisting of beta-ketoiminates, beta-diiminates, C2-C10 alkenyl, C2-C15 cycloalkenyl and C6-C10 aryl.
    Type: Application
    Filed: December 4, 2007
    Publication date: July 14, 2011
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Robin A. Gardiner, Peter S. Kirlin, Thomas H. Baum, Douglas Gordon, Connie L. Gordon, Timothy E. Glassman, Sophia Pombrik, Brian A. Vaarstra
  • MONOSILANE OR DISILANE DERIVATIVES AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS USING THE SAME
    Publication number: 20110165762
    Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes.
    Type: Application
    Filed: January 4, 2011
    Publication date: July 7, 2011
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Ziyun Wang, Chongying Xu, Thomas H. Baum
  • Copper precursors for CVD/ALD/digital CVD of copper metal films
    Patent number: 7964746
    Abstract: Copper precursors useful for depositing copper or copper-containing films on substrates, e.g., microelectronic device substrates or other surfaces. The precursors includes copper compounds of various classes, including copper borohydrides, copper compounds with cyclopentadienyl-type ligands, copper compounds with cyclopentadienyl-type and isocyanide ligands, and stabilized copper hydrides. The precursors can be utilized in solid or liquid forms that are volatilized to form precursor vapor for contacting with the substrate, to form deposited copper by techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD) or rapid vapor deposition (digital CVD).
    Type: Grant
    Filed: March 30, 2008
    Date of Patent: June 21, 2011
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Tianniu Chen, Chongying Xu, Thomas H. Baum, Bryan C. Hendrix, Jeffrey F. Roeder, Juan E. Dominguez, Adrien R. Lavoie, Harsono S. Simka
  • COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS
    Publication number: 20110136343
    Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.
    Type: Application
    Filed: February 15, 2011
    Publication date: June 9, 2011
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Ziyun Wang, Chongying Xu, Thomas H. Baum, Bryan Hendrix, Jeffrey F. Roeder
  • SCALABLE LEAD ZIRCONIUM TITANATE (PZT) THIN FILM MATERIAL AND DEPOSITION METHOD, AND FERROELECTRIC MEMORY DEVICE STRUCTURES COMPRISING SUCH THIN FILM MATERIAL
    Publication number: 20110097478
    Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 ?m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10?2 ?m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).
    Type: Application
    Filed: December 23, 2010
    Publication date: April 28, 2011
    Applicant: Advanced Technology Materials, Inc.
    Inventors: Peter C. Van Buskirk, Jeffrey F. Roeder, Steven M. Bilodeau, Michael W. Russell, Stephen T. Johnston, Daniel J. Vestyck, Thomas H. Baum
  • Chemical mechanical planarization pad
    Patent number: 7931713
    Abstract: A Chemical Mechanical Planarization (CMP) Pad. The CMP pad may be hydrophobic due to the incorporation of metal complexing agents. The CMP pad substantially retaining planarization characteristics throughout planarization applications. Shearing, hardness, wearing, water absorption and electrical characteristics of the CMP pad remain substantially constant during CMP applications.
    Type: Grant
    Filed: November 13, 2007
    Date of Patent: April 26, 2011
    Assignee: Advanced Technology Materials, Inc.
    Inventor: Thomas H. Baum
  • Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride
    Patent number: 7910765
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Grant
    Filed: July 17, 2010
    Date of Patent: March 22, 2011
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Ravi K. Laxman, Thomas H. Baum, Bryan C. Hendrix, Jeffrey F. Roeder
  • Composition and method for low temperature deposition of silicon-containing films
    Patent number: 7887883
    Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.
    Type: Grant
    Filed: May 11, 2010
    Date of Patent: February 15, 2011
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Thomas H. Baum, Bryan C. Hendrix, Jeffrey F. Roeder
  • Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material
    Patent number: 7862857
    Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 ?m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10?2 ?m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).
    Type: Grant
    Filed: April 27, 2010
    Date of Patent: January 4, 2011
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Peter C. Van Buskirk, Jeffrey F. Roeder, Steven M. Bilodeau, Michael W. Russell, Stephen T. Johnston, Daniel J. Vestyck, Thomas H. Baum
  • Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
    Patent number: 7863203
    Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes.
    Type: Grant
    Filed: January 24, 2008
    Date of Patent: January 4, 2011
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Thomas H. Baum
  • Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta0thin films
    Patent number: 7858816
    Abstract: Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.
    Type: Grant
    Filed: May 30, 2010
    Date of Patent: December 28, 2010
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum
  • ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS
    Publication number: 20100317150
    Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
    Type: Application
    Filed: August 22, 2010
    Publication date: December 16, 2010
    Applicant: Advanced Technology Materials, Inc.
    Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Melissa A. Petruska, Matthias Stender, Philip S.H. Chen, Gregory T. Stauf, Bryan C. Hendrix
  • COMPOSITION AND METHOD FOR LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF SILICON-CONTAINING FILMS INCLUDING SILICON CARBONITRIDE AND SILICON OXYCARBONITRIDE FILMS
    Publication number: 20100314590
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Application
    Filed: August 24, 2010
    Publication date: December 16, 2010
    Applicant: Advanced Technology Materials, Inc.
    Inventors: Ziyun WANG, Chongying Xu, Bryan Hendrix, Jeffrey Roeder, Tianniu Chen, Thomas H. Baum
  • Tantalum amide complexes for depositing tantalum-containing films, and method of making same
    Patent number: 7838073
    Abstract: Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.
    Type: Grant
    Filed: May 4, 2010
    Date of Patent: November 23, 2010
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Tianniu Chen, Chongying Xu, Thomas H. Baum
  • Antimony and germanium complexes useful for CVD/ALD of metal thin films
    Patent number: 7838329
    Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
    Type: Grant
    Filed: May 12, 2007
    Date of Patent: November 23, 2010
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Melissa A. Petruska, Matthias Stender, Philip S. H. Chen, Gregory T. Stauf, Bryan C. Hendrix
  • COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS SUCH AS FILMS INCLUDING SILICON, SILICON NITRIDE, SILICON DIOXIDE AND/OR SILICON-OXYNITRIDE
    Publication number: 20100285663
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Application
    Filed: July 17, 2010
    Publication date: November 11, 2010
    Applicant: Advanced Technology Materials, Inc.
    Inventors: Ziyun WANG, Chongying Xu, Ravi K. Laxman, Thomas H. Baum, Bryan Hendrix, Jeffrey Roeder
  • TANTALUM AMIDO-COMPLEXES WITH CHELATE LIGANDS USEFUL FOR CVD AND ALD OF TaN AND Ta205 THIN FILMS
    Publication number: 20100240918
    Abstract: Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.
    Type: Application
    Filed: May 30, 2010
    Publication date: September 23, 2010
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum
  • COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS
    Publication number: 20100221914
    Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.
    Type: Application
    Filed: May 11, 2010
    Publication date: September 2, 2010
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Ziyun Wang, Chongying Xu, Thomas H. Baum, Bryan Hendrix, Jeffrey F. Roeder
  • Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride
    Patent number: 7786320
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Grant
    Filed: May 12, 2009
    Date of Patent: August 31, 2010
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Ravi K. Laxman, Thomas H. Baum, Bryan C. Hendrix, Jeffrey F. Roeder