Abstract: Embodiments relate methods and computer program products for performance testing of a solid state memory devices. The method includes operating a first solid state memory device for a period of time and capturing state information of the first solid state memory device after the period of time. The method also includes storing the state information in a control file and loading the control file onto a second solid state memory device. Once the control file has been loaded into the second solid state memory device the state information can be adapted to fix any issues due to physical variation. Performance testing can then be preformed on the second solid state memory device without preconditioning the second solid state memory device.

Abstract: Embodiments relate methods and computer program products for performance testing of a solid state memory devices. The method includes operating a first solid state memory device for a period of time and capturing state information of the first solid state memory device after the period of time. The method also includes storing the state information in a control file and loading the control file onto a second solid state memory device. Once the control file has been loaded into the second solid state memory device the state information can be adapted to fix any issues due to physical variation. Performance testing can then be preformed on the second solid state memory device without preconditioning the second solid state memory device.

Abstract: Embodiments relate methods and computer program products for performance testing of a solid state memory devices. The method includes operating a first solid state memory device for a period of time and capturing state information of the first solid state memory device after the period of time. The method also includes storing the state information in a control file and loading the control file onto a second solid state memory device. Once the control file has been loaded into the second solid state memory device the state information can be adapted to fix any issues due to physical variation. Performance testing can then be preformed on the second solid state memory device without preconditioning the second solid state memory device.

Abstract: Log synchronization among discrete devices in a computer system includes, periodically at a predefined interval: sending, by a host to each of a plurality of discrete devices in the computer system, a synchronization tag, wherein each of the discrete devices, responsive to receiving the synchronization tag from the host, is configured to record the synchronization tag in a log entry; and recording, by the host, the synchronization tag in a log entry.

Abstract: Log synchronization among discrete devices in a computer system includes, periodically at a predefined interval: sending, by a host to each of a plurality of discrete devices in the computer system, a synchronization tag, wherein each of the discrete devices, responsive to receiving the synchronization tag from the host, is configured to record the synchronization tag in a log entry; and recording, by the host, the synchronization tag in a log entry.

Abstract: A data storage system includes a non-volatile memory array controlled by a controller. In response to receipt of write data to be written to the non-volatile memory array, the controller determines whether a read count of an unfinalized candidate block of storage within the non-volatile memory array satisfies a read count threshold applicable to the block. In response to determining that the read count of the unfinalized candidate block satisfies the read count threshold, the controller finalizing programming of the candidate block and programming an alternative block with the write data.

Abstract: A NAND flash memory device detects the occurrence of Cell Voltage Distribution Disruption Events (CVDDEs), such as a Partial Block Program (PBP) and Program-Read-Immediate (PM), and provides a way to dynamically adjust read voltage to account for CVDDEs. A read command includes extended addressing bits that are used when a CVDDE has occurred to access registers that indicate an adjustment to read voltage that is needed to accommodate the CVDDE. The read voltage is then dynamically adjusted to accommodate the CVDDE. When the CVDDE is no longer an issue, the read voltage is adjusted to its previous value before the CVDDE.

Abstract: A NAND flash memory device detects the occurrence of Cell Voltage Distribution Disruption Events (CVDDEs), such as a Partial Block Program (PBP) and Program-Read-Immediate (PRI), and provides a way to dynamically adjust read voltage to account for CVDDEs. A read command includes extended addressing bits that are used when a CVDDE has occurred to access registers that indicate an adjustment to read voltage that is needed to accommodate the CVDDE. The read voltage is then dynamically adjusted to accommodate the CVDDE. When the CVDDE is no longer an issue, the read voltage is adjusted to its previous value before the CVDDE.

Abstract: Log synchronization among discrete devices in a computer system includes, periodically at a predefined interval: sending, by a host to each of a plurality of discrete devices in the computer system, a synchronization tag, wherein each of the discrete devices, responsive to receiving the synchronization tag from the host, is configured to record the synchronization tag in a log entry; and recording, by the host, the synchronization tag in a log entry.

Abstract: Log synchronization among discrete devices in a computer system includes, periodically at a predefined interval: sending, by a host to each of a plurality of discrete devices in the computer system, a synchronization tag, wherein each of the discrete devices, responsive to receiving the synchronization tag from the host, is configured to record the synchronization tag in a log entry; and recording, by the host, the synchronization tag in a log entry.

Abstract: A NAND flash memory device detects the occurrence of Cell Voltage Distribution Disruption Events (CVDDEs), such as a Partial Block Program (PBP) and Program-Read-Immediate (PRI), and provides a way to dynamically adjust read voltage to account for CVDDEs. A read command includes extended addressing bits that are used when a CVDDE has occurred to access registers that indicate an adjustment to read voltage that is needed to accommodate the CVDDE. The read voltage is then dynamically adjusted to accommodate the CVDDE. When the CVDDE is no longer an issue, the read voltage is adjusted to its previous value before the CVDDE.

Abstract: A NAND flash memory device detects the occurrence of Cell Voltage Distribution Disruption Events (CVDDEs), such as a Partial Block Program (PBP) and Program-Read-Immediate (PM), and provides a way to dynamically adjust read voltage to account for CVDDEs. A read command includes extended addressing bits that are used when a CVDDE has occurred to access registers that indicate an adjustment to read voltage that is needed to accommodate the CVDDE. The read voltage is then dynamically adjusted to accommodate the CVDDE. When the CVDDE is no longer an issue, the read voltage is adjusted to its previous value before the CVDDE.

Abstract: A NAND flash memory device detects the occurrence of Cell Voltage Distribution Disruption Events (CVDDEs), such as a Partial Block Program (PBP) and Program-Read-Immediate (PRI), and provides a way to dynamically adjust read voltage to account for CVDDEs. A read command includes extended addressing bits that are used when a CVDDE has occurred to access registers that indicate an adjustment to read voltage that is needed to accommodate the CVDDE. The read voltage is then dynamically adjusted to accommodate the CVDDE. When the CVDDE is no longer an issue, the read voltage is adjusted to its previous value before the CVDDE.

Abstract: A NAND flash memory device detects the occurrence of Cell Voltage Distribution Disruption Events (CVDDEs), such as a Partial Block Program (PBP) and Program-Read-Immediate (PM), and provides a way to dynamically adjust read voltage to account for CVDDEs. A read command includes extended addressing bits that are used when a CVDDE has occurred to access registers that indicate an adjustment to read voltage that is needed to accommodate the CVDDE. The read voltage is then dynamically adjusted to accommodate the CVDDE. When the CVDDE is no longer an issue, the read voltage is adjusted to its previous value before the CVDDE.

Abstract: A NAND flash memory device detects the occurrence of Cell Voltage Distribution Disruption Events (CVDDEs), such as a Partial Block Program (PBP) and Program-Read-Immediate (PRI), and provides a way to dynamically adjust read voltage to account for CVDDEs. A read command includes extended addressing bits that are used when a CVDDE has occurred to access registers that indicate an adjustment to read voltage that is needed to accommodate the CVDDE. The read voltage is then dynamically adjusted to accommodate the CVDDE. When the CVDDE is no longer an issue, the read voltage is adjusted to its previous value before the CVDDE.

Abstract: A NAND flash memory device detects the occurrence of Cell Voltage Distribution Disruption Events (CVDDEs), such as a Partial Block Program (PBP) and Program-Read-Immediate (PM), and provides a way to dynamically adjust read voltage to account for CVDDEs. A read command includes extended addressing bits that are used when a CVDDE has occurred to access registers that indicate an adjustment to read voltage that is needed to accommodate the CVDDE. The read voltage is then dynamically adjusted to accommodate the CVDDE. When the CVDDE is no longer an issue, the read voltage is adjusted to its previous value before the CVDDE.

Abstract: Embodiments relate methods and computer program products for performance testing of a solid state memory devices. The method includes operating a first solid state memory device for a period of time and capturing state information of the first solid state memory device after the period of time. The method also includes storing the state information in a control file and loading the control file onto a second solid state memory device. Once the control file has been loaded into the second solid state memory device the state information can be adapted to fix any issues due to physical variation. Performance testing can then be preformed on the second solid state memory device without preconditioning the second solid state memory device.

Abstract: Embodiments relate methods and computer program products for performance testing of a solid state memory devices. The method includes operating a first solid state memory device for a period of time and capturing state information of the first solid state memory device after the period of time. The method also includes storing the state information in a control file and loading the control file onto a second solid state memory device. Once the control file has been loaded into the second solid state memory device the state information can be adapted to fix any issues due to physical variation. Performance testing can then be preformed on the second solid state memory device without preconditioning the second solid state memory device.

Abstract: Embodiments relate to solid state memory device including a storage array having a plurality of physical storage devices and the storage array includes a plurality of partitions. The solid state memory device also includes a controller comprising a plurality of mapping tables, wherein each of the plurality of mapping tables corresponds to one of the plurality of partitions. Each of the plurality of mapping tables is configured to store a physical location and a logical location of data stored in its corresponding partition.

Abstract: Embodiments relate to solid state memory device including a storage array having a plurality of physical storage devices and the storage array includes a plurality of partitions. The solid state memory device also includes a controller comprising a plurality of mapping tables, wherein each of the plurality of mapping tables corresponds to one of the plurality of partitions. Each of the plurality of mapping tables is configured to store a physical location and a logical location of data stored in its corresponding partition.