Patents by Inventor Thomas J. Haigh
Thomas J. Haigh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9735005Abstract: A method for depositing a dielectric layer that includes introducing a substrate into a process chamber of a deposition tool; and heating the substrate to a process temperature. The method may further include introducing precursors that include at least one dielectric providing gas species for a deposited layer and at least one hydrogen precursor gas into the process chamber of the deposition tool. The hydrogen precursor gas is introduced to the deposition chamber at a flow rate ranging from 50 sccm to 5000 sccm. The molar ratio for Hydrogen/Silicon gas precursor can be equal or greater than 0.05.Type: GrantFiled: March 11, 2016Date of Patent: August 15, 2017Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Thomas J. Haigh, Jr., Son V. Nguyen, Deepika Priyadarshini, Hosadurga Shobha
-
Patent number: 9502288Abstract: An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal.Type: GrantFiled: March 15, 2012Date of Patent: November 22, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Son Van Nguyen, Alfred Grill, Thomas J. Haigh, Jr., Hosadurga Shobha, Tuan A. Vo
-
Patent number: 9312224Abstract: A porous low k dielectric material containing atoms of at least Si, C, N and H (C and/or O may also be present) is used to provide an interconnect structure having reduced BEOL capacitance and resistance. The porous low k dielectric material is used as an interconnect dielectric material in which at least one interconnect metal-containing structure is embedded therein. The porous low k dielectric material has metal diffusion barrier properties due to the presence of nitrogen as an elemental constituent of the porous low k dielectric material. As such, the porous low k dielectric material can eliminate the need of a diffusion barrier liner, or reduce the thickness of the diffusion barrier liner that is typically formed between an interconnect dielectric material and the embedded interconnect metal structure.Type: GrantFiled: December 11, 2014Date of Patent: April 12, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Donald F. Canaperi, Alfred Grill, Thomas J. Haigh, Son V. Nguyen, Takeshi Nogami, Deepika Priyadarshini, Hosadurga Shobha, Matthew T. Shoudy
-
Patent number: 9105642Abstract: A dielectric stack and method of depositing the stack to a substrate using a single step deposition process. The dielectric stack includes a dense layer and a porous layer of the same elemental compound with different compositional atomic percentage, density, and porosity. The stack enhances mechanical modulus strength and enhances oxidation and copper diffusion barrier properties. The dielectric stack has inorganic or hybrid inorganic-organic random three-dimensional covalent bonding throughout the network, which contain different regions of different chemical compositions such as a cap component adjacent to a low-k component of the same type of material but with higher porosity.Type: GrantFiled: May 23, 2014Date of Patent: August 11, 2015Assignee: International Business Machines CorporationInventors: Griselda Bonilla, Alfred Grill, Thomas J. Haigh, Jr., Satyanarayana V. Nitta, Son Nguyen
-
Patent number: 9018767Abstract: A dielectric stack and method of depositing the stack to a substrate using a single step deposition process. The dielectric stack includes a dense layer and a porous layer of the same elemental compound with different compositional atomic percentage, density, and porosity. The stack enhances mechanical modulus strength and enhances oxidation and copper diffusion barrier properties. The dielectric stack has inorganic or hybrid inorganic-organic random three-dimensional covalent bonding throughout the network, which contain different regions of different chemical compositions such as a cap component adjacent to a low-k component of the same type of material but with higher porosity.Type: GrantFiled: May 23, 2014Date of Patent: April 28, 2015Assignee: International Business Machines CorporationInventors: Griselda Bonilla, Alfred Grill, Thomas J. Haigh, Jr., Satyanarayana V. Nitta, Son Nguyen
-
Publication number: 20140284815Abstract: A dielectric stack and method of depositing the stack to a substrate using a single step deposition process. The dielectric stack includes a dense layer and a porous layer of the same elemental compound with different compositional atomic percentage, density, and porosity. The stack enhances mechanical modulus strength and enhances oxidation and copper diffusion barrier properties. The dielectric stack has inorganic or hybrid inorganic-organic random three-dimensional covalent bonding throughout the network, which contain different regions of different chemical compositions such as a cap component adjacent to a low-k component of the same type of material but with higher porosity.Type: ApplicationFiled: May 23, 2014Publication date: September 25, 2014Applicant: International Business Machines CorporationInventors: Griselda Bonilla, Alfred Grill, Thomas J. Haigh, JR., Satyanarayana V. Nitta, Son Nguyen
-
Publication number: 20140256154Abstract: A dielectric stack and method of depositing the stack to a substrate using a single step deposition process. The dielectric stack includes a dense layer and a porous layer of the same elemental compound with different compositional atomic percentage, density, and porosity. The stack enhances mechanical modulus strength and enhances oxidation and copper diffusion barrier properties. The dielectric stack has inorganic or hybrid inorganic-organic random three-dimensional covalent bonding throughout the network, which contain different regions of different chemical compositions such as a cap component adjacent to a low-k component of the same type of material but with higher porosity.Type: ApplicationFiled: May 23, 2014Publication date: September 11, 2014Applicant: International Business Machines CorporationInventors: Griselda Bonilla, Alfred Grill, Thomas J. Haigh, JR., Satyanarayana V. Nitta, Son Nguyen
-
Patent number: 8779600Abstract: A dielectric stack and method of depositing the stack to a substrate using a single step deposition process. The dielectric stack includes a dense layer and a porous layer of the same elemental compound with different compositional atomic percentage, density, and porosity. The stack enhances mechanical modulus strength and enhances oxidation and copper diffusion barrier properties. The dielectric stack has inorganic or hybrid inorganic-organic random three-dimensional covalent bonding throughout the network, which contain different regions of different chemical compositions such as a cap component adjacent to a low-k component of the same type of material but with higher porosity.Type: GrantFiled: January 5, 2012Date of Patent: July 15, 2014Assignee: International Business Machines CorporationInventors: Son Van Nguyen, Griselda Bonilla, Alfred Grill, Thomas J. Haigh, Jr., Satyanarayana V. Nitta
-
Patent number: 8652950Abstract: A carbon-rich carbon boron nitride dielectric film having a dielectric constant of equal to, or less than 3.6 is provided that can be used as a component in various electronic devices. The carbon-rich carbon boron nitride dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.Type: GrantFiled: February 25, 2013Date of Patent: February 18, 2014Assignee: International Business Machines CorporationInventors: Son Van Nguyen, Alfred Grill, Thomas J. Haigh, Jr., Sanjay Mehta
-
Publication number: 20130333923Abstract: A layer of silicon nitride having a thickness from 0.5 nanometers to 2.4 nanometers is deposited on a substrate. A plasma nitridation process is carried out on the layer. These steps are repeated for a plurality of additional layers of silicon nitride, until a predetermined thickness is attained. Such steps can be used to provide a multilayer silicon nitride dielectric formed on a substrate having an upper surface of dielectric material with Cu and other conductors embedded within, and a plurality of steps. The multilayer silicon nitride dielectric has a plurality of individual layers each having a thickness from 0.5 nanometers to 2.4 nanometers, and the multilayer silicon nitride dielectric conformally covers the steps of the substrate with a conformality of at least seventy percent. A multilayer silicon nitride dielectric, and a multilevel back end of line interconnect wiring structure using same, are also provided.Type: ApplicationFiled: June 13, 2012Publication date: December 19, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Mihaela Balseanu, Stephan A. Cohen, Alfred Grill, Thomas J. Haigh, JR., Son V. Nguyen, Mei-Yee Shek, Hosadurga Shobha, Li-Qun Xia
-
Patent number: 8536069Abstract: The present disclosure provides a multilayered cap (i.e., migration barrier) that conforms to the substrate (i.e., interconnect structure) below. The multilayered cap, which can be located atop at least one interconnect level of an interconnect structure, includes, from bottom to top, a first layer comprising silicon nitride and a second layer comprising at least one of boron nitride and carbon boron nitride.Type: GrantFiled: September 12, 2012Date of Patent: September 17, 2013Assignees: International Business Machines Corporation, Applied Materials, Inc.Inventors: Mihaela Balseanu, Stephan A. Cohen, Alfred Grill, Thomas J. Haigh, Jr., Son V. Nguyen, Li-Qun Xia
-
Patent number: 8492880Abstract: The present disclosure provides a multilayered cap (i.e., migration barrier) that conforms to the substrate (i.e., interconnect structure) below. The multilayered cap, which can be located atop at least one interconnect level of an interconnect structure, includes, from bottom to top, a first layer comprising silicon nitride and a second layer comprising at least one of boron nitride and carbon boron nitride.Type: GrantFiled: April 1, 2011Date of Patent: July 23, 2013Assignees: International Business Machines Corporation, Applied Materials, Inc.Inventors: Mihaela Balseanu, Stephan A. Cohen, Alfred Grill, Thomas J. Haigh, Jr., Son V. Nguyen, Li-Qun Xia
-
Publication number: 20130175697Abstract: A dielectric stack and method of depositing the stack to a substrate using a single step deposition process. The dielectric stack includes a dense layer and a porous layer of the same elemental compound with different compositional atomic percentage, density, and porosity. The stack enhances mechanical modulus strength and enhances oxidation and copper diffusion barrier properties. The dielectric stack has inorganic or hybrid inorganic-organic random three-dimensional covalent bonding throughout the network, which contain different regions of different chemical compositions such as a cap component adjacent to a low-k component of the same type of material but with higher porosity.Type: ApplicationFiled: January 5, 2012Publication date: July 11, 2013Applicant: International Business Machines CorporationInventors: Son Van Nguyen, Griselda Bonilla, Alfred Grill, Thomas J. Haigh, JR., Satyanarayana V. Nitta
-
Patent number: 8476743Abstract: A carbon-rich carbon boron nitride dielectric film having a dielectric constant of equal to, or less than 3.6 is provided that can be used as a component in various electronic devices. The carbon-rich carbon boron nitride dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.Type: GrantFiled: September 9, 2011Date of Patent: July 2, 2013Assignee: International Business Machines CorporationInventors: Son Van Nguyen, Alfred Grill, Thomas J. Haigh, Jr., Sanjay Mehta
-
Publication number: 20130062753Abstract: A carbon-rich carbon boron nitride dielectric film having a dielectric constant of equal to, or less than 3.6 is provided that can be used as a component in various electronic devices. The carbon-rich carbon boron nitride dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.Type: ApplicationFiled: September 9, 2011Publication date: March 14, 2013Applicant: International Business Machines CorporationInventors: Son Van Nguyen, Alfred Grill, Thomas J. Haigh, JR., Sanjay Mehta
-
Publication number: 20130043514Abstract: A multiphase ultra low k dielectric process incorporating an organo-silicon precursor including an organic porogen, high frequency radio frequency power just above plasma initiation in a PECVD chamber and energy post treatment. A porous SiCOH dielectric material having a k less than 2.7 and a modulus of elasticity greater than 7 GPa. A graded carbon adhesion layer of SiO2 and porous SiCOH.Type: ApplicationFiled: August 19, 2011Publication date: February 21, 2013Applicant: International Business Machines CorporationInventors: Alfred Grill, Thomas J. Haigh, JR., Kelly Malone, Son V. Nguyen, Vishnubhai V. Patel, Hosadurga Shobha
-
Patent number: 8362596Abstract: A dielectric capping layer having a dielectric constant of less than 4.2 is provided that exhibits a higher mechanical and electrical stability to UV and/or E-Beam radiation as compared to conventional dielectric capping layers. Also, the dielectric capping layer maintains a consistent compressive stress upon post-deposition treatments. The dielectric capping layer includes a tri-layered dielectric material in which at least one of the layers has good oxidation resistance, is resistance to conductive metal diffusion, and exhibits high mechanical stability under at least UV curing. The low k dielectric capping layer also includes nitrogen content layers that contain electron donors and double bond electrons. The low k dielectric capping layer also exhibits a high compressive stress and high modulus and is stable under post-deposition curing treatments, which leads to less film and device cracking and improved device reliability.Type: GrantFiled: July 14, 2009Date of Patent: January 29, 2013Assignee: International Business Machines CorporationInventors: Stephan A. Cohen, Alfred Grill, Thomas J. Haigh, Jr., Xiao H. Liu, Son V. Nguyen, Thomas M. Shaw, Hosadurga Shobha
-
Publication number: 20130005146Abstract: The present disclosure provides a multilayered cap (i.e., migration barrier) that conforms to the substrate (i.e., interconnect structure) below. The multilayered cap, which can be located atop at least one interconnect level of an interconnect structure, includes, from bottom to top, a first layer comprising silicon nitride and a second layer comprising at least one of boron nitride and carbon boron nitride.Type: ApplicationFiled: September 12, 2012Publication date: January 3, 2013Applicants: Applied Materials, Inc., International Business Machines CorporationInventors: Mihaela Balseanu, Stephan A. Cohen, Alfred Grill, Thomas J. Haigh, JR., Son Nguyen, Li-Qun Xia
-
Patent number: 8299365Abstract: An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes an interconnect dielectric material having a dielectric constant of about 4.0 or less. The interconnect dielectric material has at least one opening therein that is filled with a Cu-containing material. The Cu-containing material within the at least one opening has an exposed upper surface that is co-planar with an upper surface of the interconnect dielectric material. The interconnect structure further includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal.Type: GrantFiled: January 7, 2010Date of Patent: October 30, 2012Assignee: International Business Machines CorporationInventors: Son Van Nguyen, Alfred Grill, Thomas J. Haigh, Jr., Hosadurga Shobha, Tuan A. Vo
-
Publication number: 20120248617Abstract: The present disclosure provides a multilayered cap (i.e., migration barrier) that conforms to the substrate (i.e., interconnect structure) below. The multilayered cap, which can be located atop at least one interconnect level of an interconnect structure, includes, from bottom to top, a first layer comprising silicon nitride and a second layer comprising at least one of boron nitride and carbon boron nitride.Type: ApplicationFiled: April 1, 2011Publication date: October 4, 2012Applicants: APPLIED MATERIALS, INC., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Mihaela Balseanu, Stephan A. Cohen, Alfred Grill, Thomas J. Haigh, JR., Son V. Nguyen, Li-Qun Xia