Abstract: A method of forming nanotube contact structures may include forming an interconnect layer over a portion of a layer of a microelectronics device and forming a nanotube layer over a portion of the interconnect layer. The nanotube layer may define openings through the nanotube layer. The method also may include forming self-aligned electrodes in the openings of the nanotube layer such that the self-aligned electrodes are formed only in openings in the nanotube layer that substantially reside over metal filled vias of the microelectronics device. In some examples, the self-aligned electrodes may be formed on the metal in the vias, and the self-aligned electrodes may not be formed in openings that do not reside over the metal filled vias.

Abstract: A method of forming CMOS circuitry integrated with MEMS devices includes bonding a wafer to a top surface layer having contacts formed to CMOS circuitry. A handle wafer is then removed from one of the top or bottom surfaces of the CMOS circuitry, and MEMS devices are formed in a remaining silicon layer.

Abstract: A hypersensitive semiconductor die structure is disclosed, in which flip-chip packaging is used in conjunction with a modified SOI die in which a thick silicon support substrate has been removed to increase sensitivity of the sensing device. Rather than being located beneath layers of interconnects and dielectric, the disclosed structure places the sensing devices close to the surface, more closely exposed to the environment in which sensing is to occur. The structure also allows for the placement of sensing films on nearer to the sensing devices and/or an oxide layer overlying the sensing devices.

Abstract: A method of forming CMOS circuitry integrated with MEMS devices includes bonding a wafer to a top surface layer having contacts formed to CMOS circuitry. A handle wafer is then removed from one of the top or bottom surfaces of the CMOS circuitry, and MEMS devices are formed in a remaining silicon layer.

Abstract: A three-axis magnetic sensing device included on a single chip. An example three-axis magnetic sensing device includes first and second sensing components that sense magnetic fields along two orthogonal axes planar to a surface of a substrate and a third sensing component that senses a magnetic field along an axis out of plane of the surface of the substrate. The third sensing component includes a carbon-based material. In one example, the first and second sensing components are anisotropic magnetoresistive sensors. In another example, the carbon-based material includes carbon nanotubes and the third sensing component includes a needle attached to the carbon-based material and electrodes that make contact with the carbon-based material.

Abstract: A method for forming a self-aligned nanotube contact structure by selectively depositing metal over nanotubes or through a nanotube network onto an interconnect layer formed below is provided. An interconnect layer is formed over a first layer of a microelectronics device. A second layer of the microelectronics device is then formed over the interconnect layer and vias are patterned through the second layer. The vias are filled with metal and a nanotube layer is formed over the vias such that openings remain in the nanotube layer. Self-aligned electrodes are formed in the openings by selective electroless plating or chemical vapor deposition such that the electrodes substantially fill only the openings in the nanotube layer that substantially reside over the metal in the vias. The resulting self-aligned nanotube contact structure envelops individual nanotubes in the region and provides low contact resistance.

Abstract: Methods and apparatus are provided for a low cost optical gyro using thin film waveguides to direct light beams among the components of the gyro. The gyro includes a substrate having an insulator layer, a silicon waveguide formed on the insulator layer, and a resonator coupled to the silicon waveguide and configured to circulate a portion of a first light beam in a first counter-propagating direction and circulate a portion of a second light beam in a second counter-propagating direction. The first silicon waveguide propagates the first and second light beams therethrough. Each of the first and second light beams has a resonance frequency when circulating in the resonator.

Abstract: A hypersensitive semiconductor die structure is disclosed, in which flip-chip packaging is used in conjunction with a modified SOI die in which a thick silicon support substrate has been removed to increase sensitivity of the sensing device. Rather than being located beneath layers of interconnects and dielectric, the disclosed structure places the sensing devices close to the surface, more closely exposed to the environment in which sensing is to occur. The structure also allows for the placement of sensing films on nearer to the sensing devices and/or an oxide layer overlying the sensing devices.

Abstract: A high density integrated processing and sensing chip includes an integrated signal processing circuit formed on one side of a substrate and a magnetic sensor element formed on an opposing side of the substrate. In one embodiment, the integrated signal processing circuit and the magnetic sensor are able to electrically connected to one another through vias or through metallic trace elements provided by a package frame.

Abstract: An optoelectronic coupling structure, a method of manufacture, and a method of operation are described. The optical coupling structure includes a waveguide that is formed within a device layer of an SOI substrate. A prism is located on a bottom side of the SOI substrate. A BOX layer of the SOI substrate, which is interposed between the prism and the waveguide, serves as a spacer region, which promotes an optical coupling of the prism to the waveguide. By positioning the prism below the waveguide, an optoelectronic IC may more readily accommodate a prism. The prism may be directly fabricated in a bulk layer of the SOI substrate or directly bonded to a bottom side surface of the BOX layer.

Abstract: Methods and systems for growing uniform oxide layers include an example method including growing a first layer of oxide on first and second facets of the substrate, with the first facet having a faster oxide growth rate. The oxide is removed from the first facet and a second oxide layer is grown on the first and second facets. Removing the oxide from the first facet includes shielding the second facet and exposing the substrate to a deoxidizing condition. The second facet is then exposed to receive the second oxide layer. Areas having differing oxide thicknesses are also grown by repeatedly growing oxide layers, selectively shielding areas, and removing oxide from exposed areas.

Abstract: The present invention relates to optical waveguide sensor devices. One aspect of the present invention is an optical waveguide sensor device, comprising a substrate; and a device layer disposed on the substrate. The device layer includes one or more sensing optical waveguides, each sensing optical waveguide having a core formed from a polymer material or an organic/silicate hybrid material; and one or more inert inorganic optical waveguides operatively coupled to at least one of the sensing optical waveguides. Another aspect of the present invention is an optical waveguide sensor device, comprising a substrate; and a device layer disposed on the substrate. The device layer includes one or more sensing optical waveguides, each sensing optical waveguide having a core formed from a polymer material or an organic/silicate hybrid material; and one or more electronic devices operatively coupled to at least one of the sensing optical waveguides.

Abstract: Methods and apparatus are provided for a low cost optical gyro with a free space closed optical path. A ring resonator comprises a substrate and reflectors formed or placed on the substrate. The reflectors comprise a closed optical path and are configured to direct each of first and second light beams in a different counter-propagating direction in the closed optical path. Each of the first and second light beams frequencies are tuned to the resonance frequency of the resonator in the direction of propagation for which the light beam is circulating in the closed optical path.

Abstract: A method of fabrication and a structure for a low-loss optical device. The optical device structure includes a waveguide that is formed within a device layer of an SOI substrate. A cladding region is formed beneath the waveguide and a BOX layer of the SOI substrate. The cladding region may comprise an air cavity or a cavity that is filled or at least partially filled with a dielectric material. Because the cladding region is formed in the bottom side, it supplements the BOX layer cladding. Consequently, a thinner BOX layer may be used for both electronic and optical devices, which facilitates optoelectronic IC processing and design.

Abstract: Methods and apparatus are provided for a low cost optical gyro using thin film waveguides to direct light beams among the components of the gyro. The gyro includes a substrate having an insulator layer, a silicon waveguide formed on the insulator layer, and a resonator coupled to the silicon waveguide and configured to circulate a portion of a first light beam in a first counter-propagating direction and circulate a portion of a second light beam in a second counter-propagating direction. The first silicon waveguide propagates the first and second light beams therethrough. Each of the first and second light beams has a resonance frequency when circulating in the resonator.

Abstract: An optoelectronic coupling structure, a method of manufacture, and a method of operation are described. The optical coupling structure includes a waveguide that is formed within a device layer of an SOI substrate. A prism is located on a bottom side of the SOI substrate. A BOX layer of the SOI substrate, which is interposed between the prism and the waveguide, serves as a spacer region, which promotes an optical coupling of the prism to the waveguide. By positioning the prism below the waveguide, an optoelectronic IC may more readily accommodate a prism. The prism may be directly fabricated in a bulk layer of the SOI substrate or directly bonded to a bottom side surface of the BOX layer.

Abstract: Methods and systems for growing uniform oxide layers include an example method including growing a first layer of oxide on first and second facets of the substrate, with the first facet having a faster oxide growth rate. The oxide is removed from the first facet and a second oxide layer is grown on the first and second facets. Removing the oxide from the first facet includes shielding the second facet and exposing the substrate to a deoxidizing condition. The second facet is then exposed to receive the second oxide layer. Areas having differing oxide thicknesses are also grown by repeatedly growing oxide layers, selectively shielding areas, and removing oxide from exposed areas.

Abstract: Methods and apparatus are provided for a low cost optical gyro with a free space closed optical path. A ring resonator comprises a substrate and reflectors formed or placed on the substrate. The reflectors comprise a closed optical path and are configured to direct each of first and second light beams in a different counter-propagating direction in the closed optical path. Each of the first and second light beams frequencies are tuned to the resonance frequency of the resonator in the direction of propagation for which the light beam is circulating in the closed optical path.

Abstract: The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched between silicon layers. The silicon layers have high free carrier mobility. In one aspect of the invention a single crystal silicon material is bonded to a thin-film dielectric material to form a silicon-insulator-silicon thin-film structure for an optical modulator.

Abstract: Silicon based thin-film optical waveguides and method of making. A method in accordance with one aspect of the present invention generally comprises the steps of providing a substrate, depositing a thin-film dielectric layer on the substrate, forming a channel in the thin-film dielectric layer, and providing a silicon layer in the channel. The silicon layer provided in the channel can be epitaxially grown in the channel. In another aspect of the present invention, the silicon layer provided in the channel can be provided as an amorphous or partially crystalline material that is subsequently crystallized.