Abstract: Methods and apparatus are provided for a low cost optical gyro with a free space closed optical path. A ring resonator comprises a substrate and reflectors formed or placed on the substrate. The reflectors comprise a closed optical path and are configured to direct each of first and second light beams in a different counter-propagating direction in the closed optical path. Each of the first and second light beams frequencies are tuned to the resonance frequency of the resonator in the direction of propagation for which the light beam is circulating in the closed optical path.

Abstract: The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched between silicon layers. The silicon layers have high free carrier mobility. In one aspect of the invention a single crystal silicon material is bonded to a thin-film dielectric material to form a silicon-insulator-silicon thin-film structure for an optical modulator.

Abstract: Silicon based thin-film optical waveguides and method of making. A method in accordance with one aspect of the present invention generally comprises the steps of providing a substrate, depositing a thin-film dielectric layer on the substrate, forming a channel in the thin-film dielectric layer, and providing a silicon layer in the channel. The silicon layer provided in the channel can be epitaxially grown in the channel. In another aspect of the present invention, the silicon layer provided in the channel can be provided as an amorphous or partially crystalline material that is subsequently crystallized.

Abstract: The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched between silicon layers. The silicon layers have high free carrier mobility. In one aspect of the invention a high mobility silicon layer can be provided by crystallizing an amorphous silicon layer. In another aspect of the invention, a high mobility silicon layer can be provided by using selective epitaxial growth and extended lateral overgrowth thereof.

Abstract: The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched between silicon layers. In one aspect of the invention an electrical contact structure is provided. The electrical contact structure comprises a connecting portion that electrically connects an active region of at least one of the silicon layers to a contact portion of the electrical contact structure.

Abstract: A semiconductor-insulator-semiconductor (SIS) device is presented along with a device for fabricating the same. The SIS device includes a lower semiconductor layer, an upper semiconductor layer, and a central insulating layer located between the overlapping portions of the lower semiconductor layer and the upper semiconductor layer. The central insulating layer is nitridized in order to make the layer less permeable to dopant species and to therefore minimize dopant cross-diffusion. Subsequently the switching characteristics of the SIS device are optimized when the SIS device is used as, for example, an integrated optical modulator.

Abstract: An optoelectronic integrated circuit is fabricated by forming isolation trenches in a SOI structure to form at least first and second areas of silicon, by forming a first silicon island over the first silicon area during a first silicon forming step such that the first silicon island forms at least a portion of an optical device, by forming a second silicon island over the second silicon area during a second silicon forming step such that the first and second silicon forming steps are separate silicon forming steps, and by processing at least the second silicon area to form an electronic device with the second silicon island.

Abstract: The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched between silicon layers. In one aspect of the invention an electrical contact structure is provided. The electrical contact structure comprises a connecting portion that electrically connects an active region of at least one of the silicon layers to a contact portion of the electrical contact structure.

Abstract: The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched between silicon layers. The silicon layers have high free carrier mobility. In one aspect of the invention a single crystal silicon material is bonded to a thin-film dielectric material to form a silicon-insulator-silicon thin-film structure for an optical modulator.

Abstract: The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched between silicon layers. The silicon layers have high free carrier mobility. In one aspect of the invention a high mobility silicon layer can be provided by crystallizing an amorphous silicon layer. In another aspect of the invention, a high mobility silicon layer can be provided by using selective epitaxial growth and extended lateral overgrowth thereof.

Abstract: An optical device can be fabricated by forming a silicon rib, such as a poly-silicon rib, on a SOI substrate so that a portion of the SOI substrate is exposed, and by forming silicon spacers, such as amorphous or poly-silicon spacers, that round off corners of the silicon rib.

Abstract: An RF semiconductor device is fabricated from a starting substrate comprising a polysilicon handle wafer, a buried oxide layer over the polysilicon handle wafer, and a silicon layer over the oxide layer.

Abstract: An RF semiconductor device is fabricated from a starting substrate comprising a polysilicon handle wafer, a buried oxide layer over the polysilicon handle wafer, and a silicon layer over the oxide layer.

Abstract: An RF semiconductor device is fabricated from a starting substrate comprising a polysilicon handle wafer, a buried oxide layer over the polysilicon handle wafer, and a silicon layer over the oxide layer.

Abstract: An electroluminescent device in accordance with the present invention includes a first conductive layer having a portion thereof for connecting to a gate of a blocking transistor formed on a substrate. A dielectric layer is formed on the first conductive layer, the dielectric layer having a dielectric constant of at least six. A second conductive layer is formed on the dielectric layer such that the first and second conductive layers have portions which form electrodes of a hold capacitor and the dielectric layer provides a capacitor dielectric between the electrodes such that the dielectric layer continuously covers the device. A pixel electrode is associated with and coupled to the blocking transistor.

Abstract: A silicon nitride layer is prepared on the surface of a silicon substrate by carrying out a surface reaction on the substrate in a vacuum chamber that contains an electrode which is capacitively coupled to an rf generator. A second electrode within the chamber, or a metal wall of the chamber itself, is connected to ground. The silicon substrates to be treated are placed on one of the electrodes to be in electrical and physical contact therewith, and a reagent gas that contains nitrogen is introduced into the chamber. An rf voltage is then applied between the electrodes to ionize and activate the gas, and cause ions and other active species thereof to be directed into the silicon substrate. The nitrogen ions and other active species that are created as a result of the application of the rf power can be directed at the surface of a number of wafers simultaneously.

Abstract: A method for impregnating copper into aluminum interconnect lines on a semiconductor device is disclosed. In a first embodiment, an interconnect pattern is formed on an aluminum layer by etching while the aluminum is substantially free from copper, and the copper is thereafter introduced to the formed interconnect lines. In a second embodiment, copper is introduced to the aluminum layer prior to formation of the desired interconnect pattern. The copper-rich layer is removed from the areas to be etched prior to etching. The method facilitates chlorine plasma etching of the aluminum which is inhibited by the presence of copper. The method is also useful with various wet etching processes where the formation of a copper-rich layer is found to stabilize the aluminum layer during subsequent processing .

Abstract: The disclosure relates to techniques for etching layered materials to produce features with beveled edges, for example, wells in silicon oxide layers employed in integrated circuit fabrication. An anisotropic etch may be employed to form wells with vertical walls in the silicon oxide layer, and an isotropic etch may be employed to bevel peripheral corners of the walls. In preferred embodiments, a double mask of a photoresist layer on an underlying thin film may be used to define the limits of the anisotropic and isotropic etches, respectively.