Abstract: A method of making a solid oxide fuel cell (SOFC) includes the steps of providing a first SOFC layer laminate tape comprising a first SOFC layer composition attached to a flexible carrier film layer, providing a second SOFC laminate tape comprising a second SOFC layer composition attached to a flexible carrier film layer, and providing a third SOFC layer laminate tape comprising a third SOFC layer composition attached to a flexible carrier film layer. The first SOFC layer laminate tape, the second SOFC layer laminate tape, and the third SOFC layer laminate tape are assembled on rolls positioned along a roll-to-roll assembly line. The laminate tapes are sequentially laminated and calendered and the flexible carrier films removed to provide a composite SOFC precursor laminate that can be sintered and combined with a cathode to provide a completed SOFC. An assembly for making composite SOFC precursor laminates is also disclosed.

Abstract: In various embodiments, techniques for fabricating solid oxide fuel cells utilize setter plates composed of or having outer surfaces composed of materials unreactive with species found in the layers of the cell.

Abstract: In various embodiments, techniques for fabricating solid oxide fuel cells utilize setter plates composed of or having outer surfaces composed of materials unreactive with species found in the layers of the cell.

Abstract: A method of making a solid oxide fuel cell (SOFC) includes the steps of providing a first SOFC layer laminate tape comprising a first SOFC layer composition attached to a flexible carrier film layer, providing a second SOFC laminate tape comprising a second SOFC layer composition attached to a flexible carrier film layer, and providing a third SOFC layer laminate tape comprising a third SOFC layer composition attached to a flexible carrier film layer. The first SOFC layer laminate tape, the second SOFC layer laminate tape, and the third SOFC layer laminate tape are assembled on rolls positioned along a roll-to-roll assembly line. The laminate tapes are sequentially laminated and calendered and the flexible carrier films removed to provide a composite SOFC precursor laminate that can be sintered and combined with a cathode to provide a completed SOFC. An assembly for making composite SOFC precursor laminates is also disclosed.

Abstract: In various embodiments, techniques for fabricating solid oxide fuel cells utilize setter plates composed of or having outer surfaces composed of materials unreactive with species found in the layers of the cell.

Abstract: In various embodiments, techniques for fabricating solid oxide fuel cells utilize setter plates composed of or having outer surfaces composed of materials unreactive with species found in the layers of the cell.

Abstract: Water purification system comprising filtration media sized with respect to each other to allow a first contaminant in the water to saturate the first medium with a delay prior to saturation of the second medium with a second contaminant.

Abstract: Water purification system comprising filtration media sized with respect to each other to allow a first contaminant in the water to saturate the first medium with a delay prior to saturation of the second medium with a second contaminant.

Abstract: Water purification system comprising filtration media sized with respect to each other to allow a first contaminant in the water to saturate the first medium with a delay prior to saturation of the second medium with a second contaminant.

Abstract: Water purification system comprising filtration media sized with respect to each other to allow a first contaminant in the water to saturate the first medium with a delay prior to saturation of the second medium with a second contaminant.

Abstract: Monolithic lattice-mismatched semiconductor heterostructures are fabricated by bonding patterned substrates with alternative active-area materials formed thereon to a rigid dielectric platform and then removing the highly-defective interface areas along with the underlying substrates to produce alternative active-area regions disposed over the insulator and substantially exhausted of misfit and threading dislocations.

Abstract: Monolithic lattice-mismatched semiconductor heterostructures are fabricated by bonding patterned substrates with alternative active-area materials formed thereon to a rigid dielectric platform and then removing the highly-defective interface areas along with the underlying substrates to produce alternative active-area regions disposed over the insulator and substantially exhausted of misfit and threading dislocations.

Abstract: Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.

Abstract: Methods for fabricating facetless semiconductor structures using commercially available chemical vapor deposition systems are disclosed herein. A key aspect of the invention includes selectively depositing an epitaxial layer of at least one semiconductor material on the semiconductor substrate while in situ doping the epitaxial layer to suppress facet formation. Suppression of faceting during selective epitaxial growth by in situ doping of the epitaxial layer at a predetermined level rather than by manipulating spacer composition and geometry alleviates the stringent requirements on the device design and increases tolerance to variability during the spacer fabrication.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Abstract: A method for minimizing particle generation during deposition of a graded Si1-xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1-xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2 on the substrate.