Patents by Inventor Thomas Langdo

Thomas Langdo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Strained-semiconductor-on-insulator finFET device structures
    Publication number: 20050280103
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: August 25, 2005
    Publication date: December 22, 2005
    Applicant: AmberWave Systems Corporation
    Inventors: Thomas Langdo, Matthew Currie, Glyn Braithwaite, Richard Hammond, Anthony Lochtefeld, Eugene Fitzgerald
  • Strained-semiconductor-on-insulator device structures with elevated source/drain regions
    Publication number: 20050218453
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: May 10, 2005
    Publication date: October 6, 2005
    Applicant: AmberWave Systems Corporation
    Inventors: Thomas Langdo, Matthew Currie, Richard Hammond, Anthony Lochtefeld, Eugene Fitzgerald
  • Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes
    Publication number: 20050212061
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: May 12, 2005
    Publication date: September 29, 2005
    Applicant: AmberWave Systems Corporation
    Inventors: Thomas Langdo, Matthew Currie, Richard Hammond, Anthony Lochtefeld, Eugene Fitzgerald
  • Strained germanium-on-insulator device structures
    Publication number: 20050205934
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: May 11, 2005
    Publication date: September 22, 2005
    Applicant: AmberWave Systems Corporation
    Inventors: Anthony Lochtefeld, Thomas Langdo, Richard Hammond, Matthew Gurrie, Eugene Fitzgerald
  • Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain
    Publication number: 20050199954
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: May 13, 2005
    Publication date: September 15, 2005
    Applicant: AmberWave Systems Corporation
    Inventors: Anthony Lochtefeld, Thomas Langdo, Richard Hammond, Matthew Currie, Eugene Fitzgerald
  • Strained-semiconductor-on-insulator device structures
    Publication number: 20050189563
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: May 3, 2005
    Publication date: September 1, 2005
    Applicant: AmberWave Systems Corporation
    Inventors: Anthony Lochtefeld, Thomas Langdo, Richard Hammond, Matthew Currie, Eugene Fitzgerald
  • Source and drain elements
    Publication number: 20050176204
    Abstract: Methods for fabricating facetless semiconductor structures using commercially available chemical vapor deposition systems are disclosed herein. A key aspect of the invention includes selectively depositing an epitaxial layer of at least one semiconductor material on the semiconductor substrate while in situ doping the epitaxial layer to suppress facet formation. Suppression of faceting during selective epitaxial growth by in situ doping of the epitaxial layer at a predetermined level rather than by manipulating spacer composition and geometry alleviates the stringent requirements on the device design and increases tolerance to variability during the spacer fabrication.
    Type: Application
    Filed: April 12, 2005
    Publication date: August 11, 2005
    Applicant: AmberWave Systems Corporation
    Inventors: Thomas Langdo, Anthony Lochtefeld
  • METHODS OF FORMING STRAINED-SEMICONDUCTOR-ON-INSULATOR DEVICE STRUCTURES
    Publication number: 20050156246
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: March 7, 2005
    Publication date: July 21, 2005
    Applicant: AmberWave Systems Corporation
    Inventors: Anthony Lochtefeld, Thomas Langdo, Richard Hammond, Matthew Currie, Eugene Fitzgerald